This work introduces a systematic approach for the development of Kretschmann configuration-based biosensors designed for non-invasive urine glucose detection. The methodology encompasses the utilization of various semiconductors, including Silicon (Si), Germanium (Ge), Gallium Nitride (GaN), Aluminum Nitride (AlN), and Indium Nitride (InN), in combination with a bimetallic layer (comprising Au and Ag films of equal thickness) to enhance the biosensor sensitivity. Additionally, 2D nanomaterials, such as Black Phosphorus and Graphene, are integrated into the semiconductor layers to enhance performance further. These configurations are meticulously optimized through the application of the transfer matrix method (TMM), and the sensing parameters are assessed using the angular modulation method. Among the semiconductors, AlN and GaN exhibit superior results. On these substrates, Graphene and Black phosphorous (BP) layers are applied, resulting in four final structures (thicknesses in nm): BK7/Au(26)/Ag(26)/Si(6)/BP(0.53)/Biosample, BK7/Au(26)/Ag(26)/AlN(14)/BP(0.53)/Biosample, BK7/Au(26)/Ag(26)/GaN(12)/BP(0.53)/Biosample, and BK7/Au(26)/Ag(26)/GaN(12)/Graphene(0.34)/Biosample. These biosensors achieve Sensitivity(° /RIU) and Figure of Merit (FoM) (1/RIU) of 380, 360, 440, 400, and 58.5, 90, 90.65, and 82.4, respectively. Subsequently, these high-performing sensors undergo testing with actual urine glucose samples. Among them, two biosensors, BK7/Au(26)/Ag(26)/AlN(14)/BP (0.53)/Biosample and BK7/Au(26)/Ag(26)/GaN(14)/Graphene(0.34)/Biosample, exhibit outstanding performance, with sensitivities (° /RIU) and FoM (1/RIU) of 394.44 & 294.44, and 112.6 & 92.01 respectively. A comparison is also made with relevant previously published work, revealing improved performance in glucose detection.
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