Spintronic Nanodevices Research Articles

Structural, electronic, and magnetic properties of binary zigzag antimonene-phosphorene nanoribbons and their mole fractions with different edge passivation: A DFT investigation

The study focuses on binary antimonene-phosphorene, a two-dimensional semiconductor material known for its high carrier mobility, suitable band gap, and strong environmental stability, making it appealing for electronics and spintronics applications. In this study, using density functional theory, we investigated the structural stability and electronic-magnetic properties of zigzag SbP nanoribbons, as well as single Sb and single P nanoribbons. Various edge passivation (H, F, Cl, O, S) are considered, along with different phosphorus mole fractions. The findings show that SbP structures with 25 % phosphorus mole fractions, as well as those passivated with various atoms, demonstrate strong conformational stability. SbP nanoribbons passivated with H, F, and Cl exhibit non-magnetic semiconductor behavior, while those passivated with O and S display magnetic metallic properties. Maximal magnetization is observed in SbP nanoribbons passivated with single S atoms, particularly magnetizing both Sb and P atoms at the edges. Additionally, SbP nanoribbons passivated with dual O atoms show negative differential resistivity and a complete spin filtering effect (100 %). The study also investigates the variation in magnetization across structures with different phosphorus mole fractions. Overall, the study demonstrates that adjusting phosphorus mole fractions and edge passivation can significantly modify the electronic and magnetic properties of SbP nanoribbons, making them suitable for spintronic nanodevices.

V doped Orth-Ga2O3: Half-metallic ferromagnetism, large magnetic anisotropy energy and high Curie temperature

Half-metallic ferromagnets have attracted intense interest worldwide and are considered to be an important component of spintronics devices. In this paper, an unpredicted Ga2O3 phase (named as Orth-Ga2O3) with good mechanical, dynamic, and thermodynamic stability is proposed by employing the adaptive genetic algorithm (AGA) crystal structure prediction approach. Surprisingly, V-doped Orth-Ga2O3 (V@Orth-Ga2O3) exhibits a strong ferromagnetic (FM) half-metallicity with a magnetic moment of 2 μB per formula. A detailed analysis of the density of states shows that the FM half-metallicity originates from the double exchange interaction between V-3d and O-2p orbitals. Besides, V@Orth-Ga2O3 has a big magnetic anisotropy energy (MAE) of 0.36 meV, mainly due to the (dxy, dx2-y2) orbitals of the V atom. According to Monte Carlo simulations, the Curie temperature TC of V@Orth-Ga2O3 is 225 K. The effect of carrier concentration and strain on the ferromagnetic stability of V@Orth-Ga2O3 system is also investigated. These unique magnetic properties make V@Orth-Ga2O3 an extremely promising material in spintronic nanodevices.

Tunable Schottky barriers and magnetoelectric coupling driven by ferroelectric polarization reversal of MnI3/In2Se3 multiferroic heterostructures

Two-dimensional (2D) multiferroic materials are recognized as promising candidates for next-generation nanodevices due to their tunable magnetoelectric coupling and distinctive physical phenomena. In this study, we proposed a novel 2D multiferroic van der Waals heterostructure (vdWH) by stacking atomic layers of ferroelectric In2Se3 and ferromagnetic MnI3. Using first-principles calculations, we found that the MnI3/In2Se3 vdWH exhibit robust metallic conductivity across various spin and polarization states, preserving the distinctive band characteristics of isolated In2Se3 and MnI3. However, the alignment of Fermi levels causes the conduction band minimum (CBM) and valence band maximum (VBM) of In2Se3 and MnI3 to shift relative to their original band structures. Remarkably, the MnI3/In2Se3 with the upward polarization state of In2Se3 exhibits an Ohmic contact. Switching the polarization direction of In2Se3 from upward to downward can transform the MnI3/In2Se3 vdWH from an Ohmic contact to a p-type Schottky contact, while also modifying its dipole moment, magnetic strength and direction. Based on these properties of MnI3/In2Se3 vdWH, we designed the field-effect transistors (FETs) with high on/off rates and nonvolatile data storage device. Furthermore, the Schottky barrier heights (SBHs), magnetic moment, and dipole moment of MnI3/In2Se3 vdWH can also be effectively regulated by reducing the interlayer distance. With the continuous reduction of the interlayer distance of MnI3/In2Se3 vdWH, its easy magnetization axis is expected to shift from in-plane to out-of-plane. These findings offer new insights for the design and development of the next-generation spintronic and nonvolatile memory nanodevices.

Quantifying spin-torque efficiency and magnetoresistance coefficient by microwave photoresistance in spin-torque ferromagnetic resonance

During the spin-torque ferromagnetic resonance (ST-FMR) measurement, the magnetization precession driven by the microwave field yields the radio frequency (rf) oscillating magnetoresistance and its time-averaged change (photoresistance). Here, we find that the strength of photoresistance can be directly determined by using dc bias current Idc modulating the symmetric component VS of the ST-FMR voltage spectrum. By measuring the angular dependence of photoresistance, we can quantify the in-plane and out-of-plane precession angles of ST-FMR, the actual rf current distribution in the magnetic and non-magnetic sublayers, and the magnitude of spin-torque and various magnetoresistance coefficients. These experimentally obtained values and analysis methods can more accurately quantify the spin-torque efficiency of both in-plane and out-of-plane spin polarizations by self-consistent calculation of the precession angle without harsh assumptions. And, we further confirm this universal method in three spintronic systems: the prototypical Pt/Py bilayer with anisotropic magnetoresistance (AMR), Py/Cu/Co20Tb80 spin valve trilayer with AMR and giant magnetoresistance, and [Co/Ni]3/Co/Pt multilayer with AMR and anisotropic interface magnetoresistance. This method eliminates potential deviation in calculating spin-torque efficiency by previously reported line shape analyzation and linewidth modulation methods of the ST-FMR technique and significantly extends its application range in characterizing spintronic materials and nanodevices.

Zigzag boron nitride nanoribbon doped with carbon atom for giant magnetoresistance and rectification behavior based nanodevices

Using the principles of density functional theory (DFT) and nonequilibrium Green’s function (NEGF), We thoroughly researched carbon-doped zigzag boron nitride nanoribbons (ZBNNRs) to understand their electronic behavior and transport properties. Intriguingly, we discovered that careful doping can transform carbon-doped ZBNNRs into a spintronic nanodevice with distinct transport features. Our model showed a giant magnetoresistance (GMR) up to a whopping 105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^5$$\\end{document} under mild bias conditions. Plus, we spotted a spin rectifier having a significant rectification ratio (RR) of 104\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^4$$\\end{document}. Our calculated transmission spectra have nicely explained why there’s a GMR up to 105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^5$$\\end{document} for spin-up current at biases of -1.2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$-1.2$$\\end{document} V, -1.1\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$-1.1$$\\end{document} V, and -1.0\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$-1.0$$\\end{document} V, and also accounted for a GMR up to 103\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^3$$\\end{document}–105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^5$$\\end{document} for spin-down current at biases of 1.0 V, 1.1 V, and 1.2 V. Similarly, the transmission spectra elucidate that at biases of 1.0 V, 1.1 V, and 1.2 V for spin-up, and at biases of 1.1 V and 1.2 V for spin-down in APMO, the RRs reach 104\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^4$$\\end{document}. Our research shines a light on a promising route to push forward the high-performance spintronics technology of ZBNNRs using carbon atom doping. These insights hint that our models could be game-changers in the sphere of nanoscale spintronic devices.

Perfect Spin Filtering, Giant Magnetoresistance, and Rectification Behavior Induced by V‐Doped Zigzag Graphene Nanoribbons

AbstractEmploying the constructs of density functional theory (DFT) and the Nonequilibrium Green's Function (NEGF), the investigation extensively explores the electronic and transport properties of zigzag graphene nanoribbons (ZGNRs) doped with vanadium (V). Notably, this inquiry unveils that strategic doping can transform V‐doped ZGNRs into spintronic nanodevices with distinctive transport attributes. Initially, the simulations showcase remarkably high spin‐filtering efficiencies (SFEs) at certain bias voltages. Furthermore, a giant magnetoresistance (GMR) peaking at 6.87 10 is detected. In conclusion, the examination discerns a spin rectifier that exhibits a significant rectification ratio (RR) of 9.62 10. This research delineates a viable trajectory for the refinement of high‐performance spintronics in ZGNRs via vanadium doping. The implications of this study indicate that the model harbors considerable promise for application in miniature spintronic devices.

On the Origin of the Above-Room-Temperature Magnetism in the 2D van der Waals Ferromagnet Fe3GaTe2.

2D magnetic materials have attracted growing interest driven by their unique properties and potential applications. However, the scarcity of systems exhibiting magnetism at room temperature has limited their practical implementation into functional devices. Here we focus on the van der Waals ferromagnet Fe3GaTe2, which exhibits above-room-temperature magnetism (Tc = 350-380 K) and strong perpendicular anisotropy. Through first-principles calculations, we examine the magnetic properties of Fe3GaTe2 and compare them with those of Fe3GeTe2. Our calculations unveil the microscopic mechanisms governing their magnetic behavior, emphasizing the pivotal role of ferromagnetic in-plane couplings in the stabilization of the elevated Tc in Fe3GaTe2. Additionally, we predict the stability, substantial perpendicular anisotropy, and high Tc of the single-layer Fe3GaTe2. We also demonstrate the potential of strain engineering and electrostatic doping to modulate its magnetic properties. Our results incentivize the isolation of the monolayer and pave the way for the future optimization of Fe3GaTe2 in magnetic and spintronic nanodevices.

The effect of different transition metal dopants on the magnetic properties of armchair antimonene, phosphorene, and their binary nanoribbons

Binary antimonene-phosphorene, a novel two-dimensional material with a medium band gap, high carrier mobility, and environmental stability, has attracted growing attention due to its wide applications in spintronics. Using density functional theory, we comprehensively investigate and compare the structural and magnetic properties of armchair Sb, P, and binary SbP nanoribbons doped with 3d transition metal atoms (Ti, Cr, Mn, Fe, Co, and Ni) with various concentrations of dopant atoms. We investigated magnetic properties, including magnetic moment, spin polarization, and spin density. It was found that the magnetic properties for single P and Sb nanoribbons do not depend on the substitution position of TM atoms. In contrast, for binary SbP nanoribbons, the substitution of TM atoms in P or Sb positions leads to different behaviors. For example, the magnetization for substitution of Fe and Co atoms in the P position of the binary SbP nanoribbon will be greater than those of the Sb position, but for other impurity atoms, the magnetization of the binary SbP nanoribbon does not strongly depend on the substitution position. The results show that with increasing the number of impurity atoms in the nanoribbon, the magnetic moment increases, except for the nickel atom in the Sb position of the SbP nanoribbon, in which the nanoribbon prefers the ferrimagnetic state. Also, the spin density results show that the magnetism of the doped systems is mainly attributed to the dopant atoms, and the neighboring atoms have a negligible contribution. The findings of antimonene-phosphorene nanoribbons doped with TM atoms may have potential applications in spintronic nanodevices.

Highly efficient spin field-effect transistor based on nanographene and hBN heterostructures: spintronic and quantum transport properties

Intense efforts are being undertaken to design atomic-scale nanodevices in response to the demand for novel electronic/spintronic devices to address the problems facing the current devices. In this work, we construct new spintronic nanodevices based on 2D heterostructures from graphene and hBN quantum dots. The heterostructures are ferromagnetic spin-ordered semiconductors with nonzero spin originating from the unpaired edge electrons of the graphene quantum dots. The net spin and its distribution on different layers of the heterostructures are controllable. For instance, doping the hBN layer in the lateral graphene-hBN-graphene structure with C-atoms can boost the net spin and facilitate its distribution on the three layers. The electronic properties are also affected where half metallicity has been achieved in this system. The I-V characteristics of the lateral G-hBN heterostructure show an oscillating spin-up current that is significantly higher than the regular spin-down current. Doping G-hBN with C-atoms significantly enhances the current magnitude and removes the oscillation due to the decreased net spin by the dopants. We demonstrate a field effect transistor from the lateral G-hBN-G heterostructure that operates based on quantum tunneling from the G-layer through the hBN-layer. The device works as a spin filter at zero gate voltage. A significant enhancement of the drain current is achieved by applying a positive gate voltage. This device shows an ON/OFF ratio of up to 1010 making it an ideal applicant for future spintronic nanodevices.

Chemical Vapor Deposition of Two-Dimensional Magnetite Nanosheets and Raman Study of Heat-Induced Oxidation Reaction

Two-dimensional magnetic materials exhibiting antiferromagnetic properties at room temperature offer significant potential for developing next generation spintronic nanodevices. This work presents controlled synthesis of two-dimensional magnetite (Fe3O4) nanosheets utilizing lost cost and convenient chemical vapor deposition (CVD) technique, Raman spectroscopy study of laser-heating and annealing induced oxidation reaction. X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and Raman spectroscopy characterizations demonstrated that Fe3O4 nanosheets down to about 10 nm with good crystalline quality, surface uniformity, and minimal defects can be obtained by optimizing the growth parameters in our CVD synthesis. Both laser-heating and annealing studies of Fe3O4 nanosheets indicated that ferrimagnetic Fe3O4 nanosheets gradually change to antiferromagnetic α-Fe2O3 nanosheets at about 400 °C. Our study showed that Raman spectroscopy provides a convenient and powerful method for estimating heat-induced temperature and investigating oxidation reaction.

Intrinsic Room-Temperature Ferromagnetism in New Halide Perovskite AgCrX3 (X: F, Cl, Br, I) Using Ab Initio and Monte Carlo Simulations.

Herein, we present a detailed comparative study of the structural, elastic, electronic, and magnetic properties of a series of new halide perovskite AgCrX3 (X: F, Cl, Br, I) crystal structures using density functional theory, mean-field theory (MFT), and quantum Monte Carlo (MC) simulations. As demonstrated by the negative formation energy and Born-Huang stability criteria, the suggested perovskite compounds show potential stability in the cubic crystal structure. The materials are ductile because the Pugh's ratio is greater than 1.75, and the Cauchy pressure (C12-C44) is positive. The ground state magnetic moments of the compound were calculated as 3.70, 3.91, 3.92, and 3.91 μB for AgCrF3, AgCrCl3, AgCrBr3, and AgCrI3, respectively. The GGA + SOC computed spin-polarized electronic structures reveal ferromagnetism and confirm the metallic character in all of these compounds under consideration. These characteristics are robust under a ±3% strained lattice constant. Using relativistic pseudopotentials, the total energy is calculated, which yields that the single ion anisotropy is 0.004 meV and the z-axis is the hard-axis in the series of AgCrX3 (X: F, Cl, Br, and I) compounds. Further, to explore room-temperature intrinsic ferromagnetism, we considered ferromagnetic and antiferromagnetic interactions of the magnetic ions in the compounds by considering a supercell with 2 × 2 × 2 dimensions. The transition temperature is estimated by two models, namely, MFT and MC simulations. The calculated Curie temperatures using MC simulations are 518.35, 624.30, 517.94, and 497.28 K, with ±5% error for AgCrF3, AgCrCl3, AgCrBr3, and AgCrI3 compounds, respectively. Our results suggest that halide perovskite AgCrX3 compounds are promising materials for spintronic nanodevices at room temperature and provide new recommendations. For the first time, we report results for novel halide perovskite compounds based on Ag and Cr atoms.

Unlocking Ultrafast Spin Transfer in Single-Magnetic-Center-Decorated Triangulene Systems.

Triangulene, as a typical open-shell graphene fragment, has attracted widespread attention for nanospintronics, promising to serve as building blocks in spin-logic units. Here, using ab initio calculations, we systematically study the laser-induced ultrafast spin-dynamic processes on triangulene nanoflakes, decorated with a transition-metal atom. The results reveal a competition between the induced magnetic center and the carbon edge of the triangulene, resulting in the coexistence of dual spin-density-distribution patterns on such single-magnetic-center systems, thus opening up possibilities of complex spin-dynamic scenarios beyond the spin flip. Interestingly, no matter what direction the spin points to, it is possible to achieve reversible spin-transfer processes using the same laser pulse. Increasing the pool of elementary processes to contain not only spin-direction-dependent but also spin-direction-independent scenarios allows for more versatile spin-logic operations, including classical handling of information and quantum computing. In the present work, we suggest downscaling nanospintronic devices by integrating triangulene-based nanostructures.

Spintronic terahertz metasurface emission characterized by scanning near-field nanoscopy

Abstract Understanding the ultrafast excitation, detection, transportation, and manipulation of nanoscale spin dynamics in the terahertz (THz) frequency range is critical to developing spintronic THz optoelectronic nanodevices. However, the diffraction limitation of the sub-millimeter waves – THz wavelengths – has impaired experimental investigation of spintronic THz nano-emission. Here, we present an approach to studying laser THz emission nanoscopy from W|CoFeB|Pt metasurfaces with ∼60-nm lateral spatial resolution. When comparing with statistic near-field THz time-domain spectroscopy with and without the heterostructures on fused silica substrates, we find that polarization- and phase-sensitive THz emission nanoscopy is more sensitive than the statistic THz scattering intensity nanoscopy. Our approach opens explorations of nanoscale ultrafast THz spintronic dynamics in optically excited metasurfaces.

Electric control of optically-induced magnetization dynamics in a van der Waals ferromagnetic semiconductor

Electric control of magnetization dynamics in two-dimensional (2D) magnetic materials is an essential step for the development of novel spintronic nanodevices. Electrostatic gating has been shown to greatly affect the static magnetic properties of some van der Waals magnets, but the control over their magnetization dynamics is still largely unexplored. Here we show that the optically-induced magnetization dynamics in the van der Waals ferromagnet Cr2Ge2Te6 can be effectively controlled by electrostatic gates, with a one order of magnitude change in the precession amplitude and over 10% change in the internal effective field. In contrast to the purely thermally-induced mechanisms previously reported for 2D magnets, we find that coherent opto-magnetic phenomena play a major role in the excitation of magnetization dynamics in Cr2Ge2Te6. Our work sets the first steps towards electric control over the magnetization dynamics in 2D ferromagnetic semiconductors, demonstrating their potential for applications in ultrafast opto-magnonic devices.

Strain-tunable ferromagnetism and skyrmions in two-dimensional Janus Cr2XYTe6 (X, Y = Si, Ge, Sn, and X≠Y) monolayers

By using first-principles calculations and micromagnetic simulations, we investigate the electronic structure, magnetic properties, and skyrmions in two-dimensional Janus Cr2XYTe6 (X,Y = Si, Ge, Sn, X ≠ Y) monolayers. Our findings reveal that the Cr2XYTe6 monolayers are ferromagnetic semiconductors with a high Curie temperature (Tc). The bandgap and Tc can be further increased by applying tensile strain. In addition, there is a transition from the ferromagnetic to the antiferromagnetic state at a compressive strain. Both Cr2SiSnTe6 and Cr2SiGeTe6 exhibit a large magnetic anisotropy energy, which are mainly associated with the significant spin–orbit coupling of the nonmagnetic Te atoms rather than that of the magnetic Cr atoms. Interestingly, the Cr2SiSnTe6 monolayer exhibits a significant Dzyaloshinskii–Moriya interaction of 1.12 meV, which facilitates the formation of chiral domain walls and skyrmions. Furthermore, under tensile strain, chiral DWs can be transformed into skyrmions if applying an external magnetic field. These findings suggest that Janus Cr2XYTe6 monolayers hold promise for spintronic nanodevice applications.

Functionalization of boron phosphide monolayers for spintronic applications by doping with alkali and alkaline earth metals

In this work, new d 0 magnetic materials are developed by doping boron phosphide (BP) monolayers with alkali (Li, Na, and K) and alkaline earth (Be, Mg, and Ca) metals. First-principles calculations confirm the good dynamical and thermal stability of the pristine monolayer. This two-dimensional model is intrinsically a non-magnetic semiconductor with a band gap of 0.90/1.36 eV, as calculated by the PBE/HSE06 functional. B-P chemical bonds are predominantly covalent, generated by electronic hybridization with a small portion of the ionic character formed by the charge transfer from the B atom to the P atom. Doping with Li, Be, and Mg on the B sublattice preserves the non-magnetic nature, causing either a considerable reduction of the band gap or metallization. Meanwhile, the monolayer is significantly magnetized with a total magnetic moment between 0.94 and 3.86 µ B in the remaining cases. Herein, magnetic properties are primarily produced by p orbitals of impurities and their neighboring host atoms, whereas Ca-3d orbitals also contribute to the magnetism of Ca-doped systems. Moreover, the doping process enables the emergence of either half-metallic or magnetic semiconductors in the BP monolayer to get prospective d 0 magnetic materials and generate spin current. The results presented herein demonstrate the effectiveness of doping with alkali and alkaline earth metals to obtain magnetized BP monolayers with feature-rich electronic properties, such that the doped systems can be recommended for applications in nano spintronic devices.

Influence of electronic correlation on the valley and topological properties of VSiGeP4 monolayer.

Valley is used as a new degree of freedom for information encoding and storage. In this work, the valley and topological properties of the VSiGeP4 monolayer were studied by adjusting the U value based on first-principles calculations. The VSiGeP4 monolayer remains in a ferromagnetic ground state regardless of the change in the U value. The magnetic anisotropy of the VSiGeP4 monolayer is initially in-plane, and then turns out-of-plane with the increase in the U value. Moreover, a topological phase transition is observed in the present VSiGeP4 monolayer with the increase in U value from 0 to 3 eV, i.e., the VSiGeP4 monolayer behaves as a bipolar magnetic semiconductor, a ferrovalley semiconductor, a half-valley metal characteristic, and a quantum anomalous Hall state. The mechanism of the topological phase transition behavior of the VSiGeP4 monolayer was analyzed. It was found that the variation in U values would change the strength of the electronic correlation effect, resulting in the valley and topological properties. In addition, carrier doping was studied to design a valleytronic device using this VSiGeP4 monolayer. By doping 0.05 electrons per f.u., the VSiGeP4 monolayer with a U value of 3 eV exhibits 100% spin polarization. This study indicates that the VSiGeP4 monolayer has potential applications in spintronic, valleytronic, and topological electronic nanodevices.

Dominant higher-order vortex gyromodes in circular magnetic nanodots.

The transition to the third dimension enables the creation of spintronic nanodevices with significantly enhanced functionality compared to traditional 2D magnetic applications. In this study, we extend common two-dimensional magnetic vortex configurations, which are known for their efficient dynamical response to external stimuli without a bias magnetic field, into the third dimension. This extension results in a substantial increase in vortex frequency, reaching up to 5 GHz, compared to the typical sub-GHz range observed in planar vortex oscillators. A systematic study reveals a complex pattern of vortex excitation modes, explaining the decrease in the lowest gyrotropic mode frequency, the inversion of vortex mode intensities, and the nontrivial spatial distribution of vortex dynamical magnetization noted in previous research. These phenomena enable the optimization of both oscillation frequency and frequency reproducibility, minimizing the impact of uncontrolled size variations in those magnetic nanodevices.

Room-temperature ferromagnetism, half-metallicity and spin transport in monolayer CrSc2Te4-based magnetic tunnel junction devices.

The discovery of novel two-dimensional (2D) half-metallic materials with a robust ferromagnetic (FM) order and a high Curie temperature (Tc) is attractive for the advancement of next-generation spintronic devices. Here, we propose a monolayer with stable 2D intrinsic FM half-metallicity, i.e., the CrSc2Te4 monolayer, which was constructed by intercalating a monolayer of 1T-CrTe2-type sandwiched between two layers of 2H-ScTe2 monolayers. Our calculations reveal that it exhibits exceptional dynamical, thermal, and mechanical stabilities accompanied by a robust half-metallicity characterized by a wide bandgap of 1.02 eV and FM ordering with a high Tc of 326 K. Notably, these properties remain intact in almost the entire range of the biaxial strain from -5% to 5%. Furthermore, our investigations demonstrate excellent spin transport capabilities, including an outstanding spin-filtering effect, and a remarkably high tunneling magnetoresistance ratio peaking at 6087.07%. The remarkable magnetic features of the 2D CrSc2Te4 monolayer with room temperature FM, intrinsic half-metallicity, and 100% spin-polarization make it a promising candidate for the next-generation high-performance spintronic nanodevices as well as high-density magnetic recording and sensors.

First-principles predictions of room-temperature ferromagnetism in orthorhombic MnX2 (X = O, S) monolayers.

Two-dimensional ferromagnets with high spin-polarization at ambient temperature are of considerable interest because they might be useful for making nanoscale spintronic devices. We report that even though bulk phases of MnO2 are generally antiferromagnetic with low ordering temperatures, the corresponding MnO2 and MnS2 monolayers are ferromagnetic, and MnS2 is a high temperature half metallic ferromagnet. Based on first-principles calculations, we find that the MnO2 monolayer is an intrinsic ferromagnetic semiconductor with a Curie temperature TC of ∼300 K, while the half-metallic MnS2 monolayer has a remarkably high TC of ∼1150 K. Both compounds have substantial magnetocrystalline anisotropy, out of plane in the case of MnO2 monolayers, and in plane along the b-axis of orthorhombic MnS2 monolayer. Interestingly, a metal-insulator phase transition occurs in the MnS2 monolayer when the applied biaxial strain is beyond -2%. Tuning near this metal-insulator transition offers additional possibilities for devices. The present work shows that MnX2 (X = O, S) monolayers have the properties required for ultrathin nano-spintronic devices.