GaAs Spin Research Articles

Tunable interdot coupling in few-electron bilayer graphene double quantum dots

We present a highly controllable double quantum dot device based on bilayer graphene. Using a device architecture of interdigitated gate fingers, we can control the interdot tunnel coupling between 1 and 4 GHz and the mutual capacitive coupling between 0.2 and 0.6 meV, independent of the charge occupation of the quantum dots. The charging energy and, hence, the dot size remain nearly unchanged. The tuning range of the tunnel coupling covers the operating regime of typical silicon and GaAs spin qubit devices.

1/f2 spectra of decoherence noise on 75As nuclear spins in bulk GaAs

To identify the decoherence origin, frequency spectra using multiple π-pulses have been extensively studied. However, little has been discussed on how to define the spectral intensities from multiple-echo decays and how to incorporate the Hahn-echo T2 in the noise spectra. Here, we show that experiments based on two theories solve these issues. As proved in the previous theory, the spectral intensity is given as the decay in the long-time limit. Unlike the initial process of decays, this definition is not only theoretically proven but also validated experimentally, since long-time behaviors are generally free from experimental artifacts. The other is the fluctuation–dissipation theory, with which the Hahn-echo T2 is utilized as the zero-frequency limit of the noise spectrum and as an answer to the divergent issue on the 1/fn noises. As a result, arsenic nuclear spins are found to exhibit 1/f2 dependences over two orders of magnitude in all the substrates of un-doped, Cr-doped semi-insulating and Si-doped metallic GaAs at 297 K. The 1/f2 dependence indicates that the noise is dominated by a single source with characteristic frequency fcun = 170 ± 10 Hz, fcCr = 210 ± 10 Hz and fcSi = 460 ± 30 Hz. These fc values are explained by a model that the decoherence is caused by the fluctuations of next-nearest-neighboring nuclear spins.

Control of a spin qubit in a lateral GaAs quantum dot based on symmetry of gating potential

We study the influence of quantum dot symmetry on the Rabi frequency and phonon induced spin relaxation rate in a single electron GaAs spin qubit. We find that anisotropic dependence on the magnetic field direction is independent of the choice of the gating potential. Also, we discover that relative orientation of the quantum dot, with respect to the crystallographic frame, is relevant in systems with ${\bf C}_{1{\rm v}}$, ${\bf C}_{2{\rm v}}$, or ${\bf C}_{n}$ ($n\neq4r$) symmetry. To demonstrate the important impact of the gating potential shape on the spin qubit lifetime, we compare the effects of an equilateral triangle, square, and rectangular confinement with the known results for the harmonic potential. In the studied cases, enhanced spin qubit lifetime is revealed, reaching almost six orders of magnitude increase for the equilateral triangle gating.

First-principles hyperfine tensors for electrons and holes in GaAs and silicon

Understanding (and controlling) hyperfine interactions in semiconductor nanostructures is important for fundamental studies of material properties as well as for quantum information processing with electron, hole, and nuclear-spin states. Through a combination of first-principles density-functional theory (DFT) and $\mathbf{k}\cdot\mathbf{p}$ theory, we have calculated hyperfine tensors for electrons and holes in GaAs and crystalline silicon. Accounting for relativistic effects near the nuclear core, we find contact hyperfine interactions for electrons in GaAs that are consistent with Knight-shift measurements performed on GaAs quantum wells and are roughly consistent with prior estimates extrapolated from measurements on InSb. We find that a combination of DFT and $\mathbf{k}\cdot\mathbf{p}$ theory is necessary to accurately determine the contact hyperfine interaction for electrons at a conduction-band minimum in silicon that is consistent with bulk Knight-shift measurements. For hole spins in GaAs, the overall magnitude of the hyperfine couplings we find from DFT is consistent with previous theory based on free-atom properties, and with heavy-hole Overhauser shifts measured in GaAs (and InGaAs) quantum dots. In addition, we theoretically predict that the heavy-hole hyperfine coupling to the As nuclear spins is stronger and almost purely Ising-like, while the (weaker) coupling to the Ga nuclear spins has significant non-Ising corrections. In the case of hole spins in silicon, we find (surprisingly) that the strength of the hyperfine interaction in the valence band is comparable to that in the conduction band and that the hyperfine tensors are highly anisotropic (Ising-like) in the heavy-hole subspace. These results suggest that the hyperfine coupling cannot be ruled out as a limiting mechanism for coherence ($T_2^{\ast}$) times recently measured for heavy holes in silicon quantum dots.

Rapid High-Fidelity Spin-State Readout in Si / Si - Ge Quantum Dots via rf Reflectometry

Silicon spin qubits show great promise as a scalable qubit platform for fault-tolerant quantum computing. However, fast high-fidelity readout of charge and spin states, which is required for quantum error correction, has remained elusive. Radio-frequency reflectometry enables rapid high-fidelity readout of GaAs spin qubits, but the relatively large resistances and capacitances of accumulation-mode Si quantum dot devices have made radio-frequency reflectometry challenging in these platforms. In this work, we implement radio-frequency reflectometry in a Si/SiGe quantum dot device with overlapping gates by making minor device-level changes that eliminate these challenges. We demonstrate charge state readout with a fidelity above 99.9% in an integration time of 300 ns. We measure the singlet and triplet states of a double quantum dot via both conventional Pauli spin blockade and a charge latching mechanism, and we achieve maximum fidelities of 82.9% and 99.0% in 2.08 $\mu$s and 1.6 $\mu$s integration times, respectively. We also use radio-frequency reflectometry to perform single-shot readout of single-spin states via spin-selective tunneling in microsecond-scale integration times.

Simultaneous coherence enhancement of optical and microwave transitions in solid-state electronic spins.

Solid-state electronic spins are extensively studied in quantum information science, as their large magnetic moments offer fast operations for computing1 and communication2-4, and high sensitivity for sensing5. However, electronic spins are more sensitive to magnetic noise, but engineering of their spectroscopic properties, for example, using clock transitions and isotopic engineering, can yield remarkable spin coherence times, as for electronic spins in GaAs6, donors in silicon7-11 and vacancy centres in diamond12,13. Here we demonstrate simultaneously induced clock transitions for both microwave and optical domains in an isotopically purified 171Yb3+:Y2SiO5 crystal, reaching coherence times of greater than 100 μs and 1 ms in the optical and microwave domains, respectively. This effect is due to the highly anisotropic hyperfine interaction, which makes each electronic-nuclear state an entangled Bell state. Our results underline the potential of 171Yb3+:Y2SiO5 for quantum processing applications relying on both optical and spin manipulation, such as optical quantum memories4,14, microwave-to-optical quantum transducers15,16, and single-spin detection17, while they should also be observable in a range of different materials with anisotropic hyperfine interactions.

Systematic investigations of transient response of nuclear spins in the presence of polarized electrons

We electrically probed the transient response of nuclear spins in an $n$-GaAs channel by performing Hanle signal and spin-valve signal measurements on an all-electrical spin-injection device having a half-metallic spin source of $\mathrm{C}{\mathrm{o}}_{2}\mathrm{MnSi}$. Furthermore, we simulated the Hanle and spin-valve signals by using the time evolution of nuclear-spin polarization under the presence of polarized electron spins by taking both ${T}_{1\mathrm{e}}$ and ${T}_{1}$ into consideration, where ${T}_{1\mathrm{e}}^{\ensuremath{-}1}$ is the polarization rate of nuclear spins through the transfer of angular momentum from polarized electron spins and ${T}_{1}^{\ensuremath{-}1}$ is the depolarization rate of nuclear spins through the interaction with the lattice. The simulation results reproduced our experimental results on all the nuclear-spin-related phenomena appearing in the Hanle and spin-valve signals at different measurement conditions, providing quantitative explanation for the transient response of nuclear spins in GaAs to a change in magnetic fields and an estimate of the time scales of ${T}_{1\mathrm{e}}$ and ${T}_{1}$. These experimental and simulated results will deepen the understanding of nuclear-spin dynamics in semiconductors.

Methods for spin injection managing in inGaAs/GaAs/Al2O3/CoPt spin light-emitting diodes

Spin injection in CoPt/Al2O3/(Al)GaAs spin light-emitting diodes (SLEDs) was studied. The oscillations of the degree of circular polarization upon variation of a distance between the active region of the SLED and a CoPt ferromagnetic injector were observed. The oscillations depend neither on a SLED material (GaAs or AlGaAs), nor on the type of injected spin-polarized carriers (electrons and holes) and are related to the action of a perpendicular magnetic field on the injected spin-polarized carriers that causes their precession. During the transfer to the active region through a distance of 50–100 nm from the injector, a z–component of a spin changes a phase that is detected experimentally as the change in sign of the degree of circular polarization of luminescence. Conceivably, a source of the internal magnetic field leading to spin precession is the magnetic field of the nonuniformly magnetized CoPt contact.

Spectrum of the Nuclear Environment for GaAs Spin Qubits.

Using a singlet-triplet spin qubit as a sensitive spectrometer of the GaAs nuclear spin bath, we demonstrate that the spectrum of Overhauser noise agrees with a classical spin diffusion model over 6 orders of magnitude in frequency, from 1mHz to 1kHz, is flat below 10mHz, and falls as 1/f^{2} for frequency f≳1 Hz. Increasing the applied magnetic field from 0.1 to 0.75T suppresses electron-mediated spin diffusion, which decreases the spectral content in the 1/f^{2} region and lowers the saturation frequency, each by an order of magnitude, consistent with a numerical model. Spectral content at megahertz frequencies is accessed using dynamical decoupling, which shows a crossover from the few-pulse regime (≲16π pulses), where transverse Overhauser fluctuations dominate dephasing, to the many-pulse regime (≳32 π pulses), where longitudinal Overhauser fluctuations with a 1/f spectrum dominate.

Spin injection and detection up to room temperature in Heusler alloy/n-GaAs spin valves

We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $\mu$V) spin valve signals at room temperature and injector currents of $10^3~$A/cm$^2$, facilitated by fabricating spin valve separations smaller than the 1 $\mu$m spin diffusion length and applying a forward bias to the detector contact. The spin transport parameters are measured by comparing the injector-detector contact separation dependence of the spin valve signal with a numerical model accounting for spin drift and diffusion. The apparent suppression of the spin injection efficiency at the lowest temperatures reflects a breakdown of the ordinary drift-diffusion model in the regime of large spin accumulation. A theoretical calculation of the D'yakonov-Perel spin lifetime agrees well with the measured $n$-GaAs spin lifetime over the entire temperature range.

Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation

The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the impurity-to-band excitation and observe a sign inversion of the luminescence polarization depending on the pump power. The g factor of a hole localized on the Mn acceptor in the quantum well was also found to be considerably modified from its bulk value due to the quantum confinement effect. This finding shows the importance of the local environment on magnetic properties of the dopants in semiconductor nanostructures.

Stabilizing nuclear spins around semiconductor electrons via the interplay of optical coherent population trapping and dynamic nuclear polarization

We experimentally demonstrate how coherent population trapping (CPT) for donor-bound electron spins in GaAs results in autonomous feedback that prepares stabilized states for the spin polarization of nuclei around the electrons. CPT was realized by excitation with two lasers to a bound-exciton state. Transmission studies of the spectral CPT feature on an ensemble of electrons directly reveal the statistical distribution of prepared nuclear spin states. Tuning the laser driving from blue to red detuned drives a transition from one to two stable states. Our results have importance for ongoing research on schemes for dynamic nuclear spin polarization, the central spin problem and control of spin coherence.

Transient analysis of oblique Hanle signals observed in GaAs

A transient response of nuclear spins in GaAs to a change in a magnetic field was analyzed based on the time evolution of nuclear spin temperature. Simulation results well reproduced our experimental results on transient oblique Hanle signals observed in an all-electrical spin injection device, enabling a quantitative understanding of nuclear spin dynamics in the presence of a hyperfine interaction between nuclei and polarized electrons. Analysis regarding the time evolution of nuclear spin temperature revealed that the hysteretic nature of a nuclear field with respect to the sweep direction of an external field was caused by the delay of time response of nuclear spin temperature to a change in the magnetic field. This analysis provides a deep understanding of nuclear spin dynamics in semiconductors.

Noise Suppression Using Symmetric Exchange Gates in Spin Qubits.

We demonstrate a substantial improvement in the spin-exchange gate using symmetric control instead of conventional detuning in GaAs spin qubits, up to a factor of six increase in the quality factor of the gate. For symmetric operation, nanosecond voltage pulses are applied to the barrier that controls the interdot potential between quantum dots, modulating the exchange interaction while maintaining symmetry between the dots. Excellent agreement is found with a model that separately includes electrical and nuclear noise sources for both detuning and symmetric gating schemes. Unlike exchange control via detuning, the decoherence of symmetric exchange rotations is dominated by rotation-axis fluctuations due to nuclear field noise rather than direct exchange noise.

Analysis of the transient response of nuclear spins in GaAs with/without nuclear magnetic resonance

As an alternative to studying the steady-state responses of nuclear spins in solid state systems, working within a transient-state framework can reveal interesting phenomena. The response of nuclear spins in GaAs to a changing magnetic field was analyzed based on the time evolution of nuclear spin temperature. Simulation results well reproduced our experimental results for the transient oblique Hanle signals observed in an all-electrical spin injection device. The analysis showed that the so called dynamic nuclear polarization can be treated as a cooling tool for the nuclear spins: It works as a provider to exchange spin angular momentum between polarized electron spins and nuclear spins through the hyperfine interaction, leading to an increase in the nuclear polarization. In addition, a time-delay of the nuclear spin temperature with a fast sweep of the external magnetic field produces a possible transient state for the nuclear spin polarization. On the other hand, the nuclear magnetic resonance acts as a heating tool for a nuclear spin system. This causes the nuclear spin temperature to jump to infinity: i.e., the average nuclear spins along with the nuclear field vanish at resonant fields of 75As, 69Ga and 71Ga, showing an interesting step-dip structure in the oblique Hanle signals. These analyses provide a quantitative understanding of nuclear spin dynamics in semiconductors for application in future computation processing.

Comment on “Optically pumped spin-exchange polarized-electron source”

A of spin-polarized current with a 24% polarization and a 2-eV energy spreaddepending markedly on tenuous roles of various buffer gases which we consider are not explained cogently.Spin-related beam experiments over many decades have significant achievements using GaAs spin sources.DOI: 10.1103/PhysRevA.91.056703 PACS number(s): 34

Hot carrier effects on the magneto-optical detection of electron spins in GaAs

We report on spatially resolved pump-probe MOKE spectroscopy measurements of electron spins in bulk $n$-type GaAs. For low lattice temperatures these measurements are significantly compromised by local changes in the excitonic magneto-optical response which are not related to the electron spin polarization. These local changes in the excitonic Kerr spectrum are due to carrier heating caused by above-band-gap optical excitation. When hot electrons are present, a measurement of the local Kerr rotation at a fixed arbitrary probe wavelength does not necessarily correctly reveal the local electron spin polarization. By analyzing the spatial dependence of the full excitonic Kerr rotation spectrum we determine the local excitonic spin splitting energy from which we obtain the true lateral electron spin polarization profile.

LONG SPIN MEMORY TIMES AND FLIPPING FEATURES IN GaAs: THE HYPERFINE COUPLING EFFECT

The flipping of optically generated spins in GaAs was investigated using pump–probe photoluminescence polarization measurements in the presence of an external magnetic field (B) applied perpendicularly to the spins. The spin polarization (PS) was found to decay with the time delay. The observed PS decay rates correspond to the spin-flip times. A featurable spin flipping was observed. The spin-flip (spin memory) times are longest at low lattice temperature and high B, and times up to 1.5 μs were observed. However, a field higher than ~4 T saturates the spin-flip times. The results are discussed based on the hyperfine coupling effect.

Noise Spectroscopy Using Correlations of Single-Shot Qubit Readout

A better understanding of the noise causing qubit decoherence is crucial for improving qubit performance. The noise spectrum affecting the qubit may be extracted by measuring dephasing under the application of pulse sequences but requires accurate qubit control and sufficiently long relaxation times, which are not always available. Here, we describe an alternative method to extract the spectrum from correlations of single-shot measurement outcomes of successive free induction decays. This method only requires qubit initialization and readout with a moderate fidelity and also allows independent tuning of both the overall sensitivity and the frequency region over which it is sensitive. Thus, it is possible to maintain a good detection contrast over a very wide frequency range. We discuss using our method for measuring both 1/f noise and the fluctuation spectrum of the nuclear bath of GaAs spin qubits.

Electrons surfing on a sound wave as a platform for quantum optics with flying electrons

Electrons in a metal are indistinguishable particles that interact strongly with other electrons and their environment. Isolating and detecting a single flying electron after propagation, in a similar manner to quantum optics experiments with single photons, is therefore a challenging task. So far only a few experiments have been performed in a high-mobility two-dimensional electron gas in which the electron propagates almost ballistically. In these previous works, flying electrons were detected by means of the current generated by an ensemble of electrons, and electron correlations were encrypted in the current noise. Here we demonstrate the experimental realization of high-efficiency single-electron source and detector for a single electron propagating isolated from the other electrons through a one-dimensional channel. The moving potential is excited by a surface acoustic wave, which carries the single electron along the one-dimensional channel at a speed of 3 μm ns(-1). When this quantum channel is placed between two quantum dots several micrometres apart, a single electron can be transported from one quantum dot to the other with quantum efficiencies of emission and detection of 96% and 92%, respectively. Furthermore, the transfer of the electron can be triggered on a timescale shorter than the coherence time T(2)* of GaAs spin qubits. Our work opens new avenues with which to study the teleportation of a single electron spin and the distant interaction between spatially separated qubits in a condensed-matter system.