Spin Transport Signals Research Articles

Micromagnetic study of spin transport in easy-plane antiferromagnetic insulators

Magnon eigenmodes in easy-plane antiferromagnetic insulators are linearly polarized and are not expected to carry any net spin angular momentum. Motivated by recent nonlocal spin transport experiments in the easy-plane phase of hematite, we perform a series of micromagnetic simulations in a nonlocal geometry at finite temperatures. We show that by tuning an external magnetic field, we can control the magnon eigenmodes and the polarization of the spin transport signal in these systems. We argue that a coherent beating oscillation between two orthogonal linearly polarized magnon eigenmodes is the mechanism responsible for finite spin transport in easy-plane antiferromagnetic insulators. The sign of the detected spin signal is also naturally explained by the proposed coherent beating mechanism. Our finding opens a path for on-demand control of the spin signal in a large class of easy-plane antiferromagnetic insulators.

A puzzling insensitivity of magnon spin diffusion to the presence of 180-degree domain walls

We present room-temperature measurements of magnon spin diffusion in epitaxial ferrimagnetic insulator MgAl0.5Fe1.5O4 (MAFO) thin films near zero applied magnetic field where the sample forms a multi-domain state. Due to a weak uniaxial magnetic anisotropy, the domains are separated primarily by 180° domain walls. We find, surprisingly, that the presence of the domain walls has very little effect on the spin diffusion – nonlocal spin transport signals in the multi-domain state retain at least 95% of the maximum signal strength measured for the spatially-uniform magnetic state, over distances at least five times the typical domain size. This result is in conflict with simple models of interactions between magnons and static domain walls, which predict that the spin polarization carried by the magnons reverses upon passage through a 180° domain wall.

Nonlocal Spin Valves Based on Graphene/Fe3GeTe2 van der Waals Heterostructures.

With recent advances in two-dimensional (2D) ferromagnets with enhanced Curie temperatures, it is possible to develop all-2D spintronic devices with high-quality interfaces using 2D ferromagnets. In this study, we have successfully fabricated nonlocal spin valves with Fe3GeTe2 (FGT) as the spin source and detector and multilayer graphene as the spin transport channel. The nonlocal spin transport signal was found to strongly depend on temperature and disappear at a temperature below the Curie temperature of the FGT flakes, which stemmed from the temperature-dependent ferromagnetism of FGT. The spin injection efficiency was estimated to be about 1%, close to that of conventional nonlocal spin valves with transparent contacts between ferromagnetic electrodes and the graphene channel. In addition, the spin transport signal was found to depend on the direction of the magnetic field and the magnitude of the current, which was due to the strong perpendicular magnetic anisotropy of FGT and the thermal effect, respectively. Our results provide opportunities to extend the applications of van der Waals heterostructures in spintronic devices.

Development of an optically gated Fe/n-GaAs spin-polarized transistor

Efficient modulation of electrically injected spin signals that is suitable for modern-day transistor functionality is yet to be established. In this work, we demonstrate in detail the fabrication of a $\mathrm{Fe}/n\text{-GaAs}$ spin injection device and the experimental setup for an optical gating of the nonlocal spin transport signal. In situ scanning electron microscopy interface imaging reveals more uniform current distribution at the $\mathrm{Fe}/n\text{-GaAs}$ injector interface at bias voltages higher than the Schottky barrier height. Three- and four-terminal Hanle measurements confirm successful spin injection into $n$-GaAs, with strong interfacial spin dephasing at high magnetic fields. A time-resolved pump-probe Kerr rotation setup was used to illuminate circularly polarized light in the region of the pure spin current in $\mathrm{Fe}/n\text{-GaAs}$ lateral spin injection devices, where ($0.4\ifmmode\pm\else\textpm\fi{}0.3)%$ modulation of the nonlocal signal depending on the light helicity was observed at 30 K.

Detection of chirality-induced spin polarization over millimeters in polycrystalline bulk samples of chiral disilicides NbSi2 and TaSi2

We report that spin polarization occurs over millimeters in polycrystalline bulk samples of chiral disilicide NbSi2 and TaSi2. As previously demonstrated in the experiments using single crystals of NbSi2 and TaSi2, electrical transport measurements allow detection of direct and inverse signals associated with the chirality-induced spin polarization even in the chiral polycrystals. Spin polarization signals also appear in nonlocal measurements, in which charge current flows only in the area millimeters away from the detection electrode. These data mean that the spin polarization phenomena occur regardless of the presence of crystalline grains in the polycrystals, indicating a robustness and resilience of the chirality-induced spin polarization. On the basis of the experimental data, we found that the sum rule holds for the spin transport signals. A distribution of handedness over the samples was determined on average in the polycrystals. While the mechanism of preserving the spin polarization over millimeters remains to be clarified, the present study may open up prospects of spin control and manipulation over macroscopic length scales using chiral materials.

Magnetoresistance effect in vertical NiFe/graphene/NiFe junctions

For convenient and efficient verification of the magnetoresistance effect in graphene spintronic devices, vertical magnetic junctions with monolayer graphene sandwiched between two NiFe electrodes are fabricated by a relatively simple way of transferring CVD graphene onto the bottom ferromagnetic stripes. The anisotropic magnetoresistance contribution is excluded by the experimental result of magnetoresistance (MR) ratio dependence on the magnetic field direction. The spin-dependent transport measurement reveals two distinct resistance states switching under an in-plane sweeping magnetic field. A magnetoresistance ratio of about 0.17 % is obtained at room temperature and it shows a typical monotonic downward trend with the bias current increasing. This bias dependence of MR further verifies that the spin transport signal in our device is not from the anisotropic magnetoresistance. Meanwhile, the I–V curve is found to manifest a linear behavior, which demonstrates the Ohmic contacts at the interface and the metallic transport characteristic of vertical graphene junction.

Electrically induced strong modulation of magnon transport in ultrathin magnetic insulator films

Magnon transport through a magnetic insulator can be controlled by current-biased heavy-metal gates that modulate the magnon conductivity via the magnon density. Here, we report nonlinear modulation effects in 10$\,$nm thick yttrium iron garnet (YIG) films. The modulation efficiency is larger than 40\%/mA. The spin transport signal at high DC current density (2.2$\times 10^{11}\,$A/m$^{2}$) saturates for a 400$\,$nm wide Pt gate, which indicates that even at high current levels a magnetic instability cannot be reached in spite of the high magnetic quality of the films.

Investigation of the thermal tolerance of silicon-based lateral spin valves

Improvement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 µm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400 °C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.

Spin Precession and Spin‐Charge Conversion in a Strong Rashba Channel at Room Temperature

The detection of spin current injected from the ferromagnet source to the semiconductor channel is very challenging due to the low injection efficiency at the interface. Especially, it is difficult to detect the spin precession signal in a strong Rashba system without a signal decay. In a semiconductor system, the spin Hall angle is much larger than the spin injection efficiency, so the spin Hall effect is utilized for room temperature operation of the semiconductor-based Rashba devices. To realize spin transport device induce by the spin-charge and charge-spin conversions, the direct spin Hall effect (DSHE) and the inverse spin Hall effect (ISHE) are adopted, respectively. The spin current is clearly detected up to room temperature and the spin transport signal agrees to the temperature dependence of the Rashba effect. From these spin transport signals, we suggest another option to extract Rashba parameters from cryogenic temperature to room temperature. The both signals of DSHE and ISHE also confirm the Onsager Reciprocity in a Rashba system.

Long-distance spin-transport across the Morin phase transition up to room temperature in ultra-low damping single crystals of the antiferromagnet \u03b1-Fe2O3

Antiferromagnetic materials can host spin-waves with polarizations ranging from circular to linear depending on their magnetic anisotropies. Until now, only easy-axis anisotropy antiferromagnets with circularly polarized spin-waves were reported to carry spin-information over long distances of micrometers. In this article, we report long-distance spin-transport in the easy-plane canted antiferromagnetic phase of hematite and at room temperature, where the linearly polarized magnons are not intuitively expected to carry spin. We demonstrate that the spin-transport signal decreases continuously through the easy-axis to easy-plane Morin transition, and persists in the easy-plane phase through current induced pairs of linearly polarized magnons with dephasing lengths in the micrometer range. We explain the long transport distance as a result of the low magnetic damping, which we measure to be ≤ 10−5 as in the best ferromagnets. All of this together demonstrates that long-distance transport can be achieved across a range of anisotropies and temperatures, up to room temperature, highlighting the promising potential of this insulating antiferromagnet for magnon-based devices.

Absence of evidence of spin transport through amorphous Y3Fe5O12

Long-distance transport of spin information in insulators without long-range magnetic order has been recently reported. Here, we perform a complete characterization of amorphous Y3Fe5O12 (a-YIG) films grown on top of SiO2. We confirm a clear amorphous structure and paramagnetic behavior of our a-YIG films, with semiconducting behavior resistivity that strongly decays with increasing temperature. The non-local transport measurements show a signal that is not compatible with spin transport and can be attributed to the drop of the a-YIG resistivity caused by Joule heating. Our results emphasize that exploring spin transport in amorphous materials requires careful procedures in order to exclude the charge contribution from the spin transport signals.

Impact of electromagnetic fields and heat on spin transport signals in Y3Fe5O12

Exploring new strategies to perform magnon logic is a key requirement for the further development of magnon-based spintronics. In this work, we realize a three-terminal magnon transport device to study the possibility of manipulating magnonic spin information transfer in a magnetic insulator via localized magnetic fields and heat generation. The device comprises two parallel Pt wires as well as a Cu center wire that are deposited on the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. While the Pt wires act as spin current injector and detector, the Cu wire is used to create local magnetostatic fields and additional heat, which impact both the magnetic configuration and the magnons within the Y$_{3}$Fe$_{5}$O$_{12}$ below. We show that these factors can create a non-local signal that shows similar features as compared to an electrically induced magnon flow. Furthermore, a modulation of the spin transport signal between the Pt wires is observed, which can be partly explained by thermally excited spin currents of different polarization. Our results indicate a potential way towards the manipulation of non-local magnon signals, which could be useful for magnon logic.

Correlation between spin transport signal and Heusler/semiconductor interface quality in lateral spin-valve devices

We show direct evidence for the impact of Heusler/semiconductor interfaces atomic structure on the spin transport signals in semiconductor-based lateral spin-valve (LSV) devices. Based on atomic scale Z-contrast scanning transmission electron microscopy and energy dispersive x-ray spectroscopy we show that atomic order/disorder of ${\mathrm{Co}}_{2}{\mathrm{FeAl}}_{0.5}{\mathrm{Si}}_{0.5}$ (CFAS)/$n$-Ge LSV devices is critical for the spin injection in Ge. By conducting a postannealing of the LSV devices, we find 90% decrease in the spin signal while there is no difference in the electrical properties of the $\mathrm{CFAS}\text{/}n$-Ge contacts and in the spin diffusion length of the $n$-Ge layer. We show that the reduction in the spin signals after annealing is attributed to the presence of intermixing phases at the Heusler/semiconductor interface. First-principles calculations show how that intermixed interface region has drastically reduced spin polarization at the Fermi level, which is the main cause for the significant decrease of the spin signal in the annealed devices above $300{\phantom{\rule{0.16em}{0ex}}}^{\ensuremath{\circ}}\mathrm{C}$.

Spin transport and spin accumulation signals in Si studied in tunnel junctions with a Fe/Mg ferromagnetic multilayer and an amorphous SiOxNy tunnel barrier

We studied the spin accumulation signals in phosphorus-doped n+-Si (8 × 1019 cm−3) by measuring the spin transport in three-terminal vertical devices with Fe(3 nm)/Mg(0 and 1 nm)/SiOxNy(1 nm)/n+-Si(001) tunnel junctions, where the amorphous SiOxNy layer was formed by oxnitridation of the Si substrate with radio frequency plasma. Obvious spin accumulation signals were observed at 4–300 K in the spin extraction geometry when the thickness of the Mg insertion layer was 1 nm. We found that by inserting a thin (1 nm) Mg layer, intermixing of Fe and SiOxNy is suppressed, leading to the appearance of the spin accumulation signals, and this result is consistent with the dead layer model recently proposed by our group [S. Sato et al., Appl. Phys. Lett. 107, 032407 (2015)]. We obtained relatively high spin polarization (PS) of electrons tunneling through the junction and long spin lifetime (τS): PS = 16% and τS = 5.6 ns at 4 K and PS = 7.5% and τS = 2.7 ns at 300 K. Tunnel junctions with an amorphous SiOxNy tunnel barrier are very promising for Si-based spintronic devices, since they can be formed by the method compatible with the silicon complementary metal-oxide-semiconductor technology.

Spin transport across antiferromagnets induced by the spin Seebeck effect

For prospective spintronics devices based on the propagation of pure spin currents, antiferromagnets are an interesting class of materials that potentially entail a number of advantages as compared to ferromagnets. Here, we present a detailed theoretical study of magnonic spin current transport in ferromagnetic-antiferromagnetic multilayers by using atomistic spin dynamics simulations. The relevant length scales of magnonic spin transport in antiferromagnets are determined. We demonstrate the transfer of angular momentum from a ferromagnet into an antiferromagnet due to the excitation of only one magnon branch in the antiferromagnet. As an experimental system, we ascertain the transport across an antiferromagnet in Y3Fe5O12 |Ir20Mn80|Pt heterostructures. We determine the spin transport signals for spin currents generated in the Y3Fe5O12 by the spin Seebeck effect and compare to measurements of the spin Hall magnetoresistance in the heterostructure stack. By means of temperature-dependent and thickness-dependent measurements, we deduce conclusions on the spin transport mechanism across Ir20Mn80 and furthermore correlate it to its paramagnetic-antiferromagnetic phase transition.

Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts

We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends clearly on the junction size, indicating the presence of the spin absorption effect at the spin-injector contact. The temperature-dependent spin signal can also be affected by the spin absorption effect. For SC spintronic applications with a low parasitic resistance, we should consider the influence of the spin absorption on the spin-transport signals in SC-based device structures.

Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer

We demonstrate that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (\ensuremath{\leqslant}2 nm) in $\mathrm{Fe}\text{/}\mathrm{Mg}\text{/}\mathrm{MgO}\text{/}{n}^{+}\text{\ensuremath{-}}\mathrm{Si}$ tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we observe the narrower three-terminal Hanle (N-3TH) signals indicating true spin injection into Si and estimate the spin polarization in Si to be 16% when the thickness of the Mg insertion layer is 1 nm, whereas no N-3TH signal is observed without the Mg insertion. This means that the spin injection/extraction efficiency is enhanced by suppressing the formation of a magnetically dead layer at the Fe/MgO interface. We also observe clear spin transport signals, such as nonlocal Hanle signals and spin-valve signals, in a lateral four-terminal device with the same $\mathrm{Fe}\text{/}\mathrm{Mg}\text{/}\mathrm{MgO}\text{/}{n}^{+}\text{\ensuremath{-}}\mathrm{Si}$ tunnel junctions fabricated on a Si-on-insulator substrate. It is found that both the intensity and linewidth of the spin signals are affected by the geometrical effects (device geometry and size). We have derived analytical functions taking into account the device structures, including channel thickness and electrode size, and estimated important parameters: spin lifetime and spin polarization. Our analytical functions explain the experimental results very well. Our study shows the importance of suppressing a magnetically dead layer and provides a unified understanding of spin injection/detection signals in different device geometries.

Spin accumulation and transport signals in CoFe/MgO/Si devices with confined structure of n+-Si layer

Observation of the spin signals in devices with low interface resistance of ferromagnetic/semiconductor junctions is one of the most important issues from the application view point. We demonstrate spin transport and accumulation signals in highly doped ∼1×1020 cm-3 n+-Si by using CoFe/MgO/n+-Si (10 nm, 20 nm)/n-Si devices. The highly doped n+-Si was confined within a thin n+-Si layer (10 nm and 20 nm in thickness). In this confined structure, we observed the spin accumulation signals for the devices with impurity concentration of ∼1×1020 cm-3 and the spin transport signals for the devices with ∼1 kΩμm2 interface resistance. This indicates that the n+ confined structure is important for observing and increasing spin signals in the low-interface-resistance region.

Effect of post annealing on spin accumulation and transport signals in Co2FeSi/MgO/n+-Si on insulator devices

The post annealing temperature dependence of spin accumulation and transport signals in Co2FeSi/MgO/n+-Si on insulator were investigated. The spin signals were detected using 3- and 4-terminal Hanle, 2-terminal local and 4-terminal nonlocal magnetoresistance measurements. The post annealing temperature (TA) dependence of the magnitude in 3-terminal narrow Hanle signals is nearly constant up to TA < 400°C, however a slight decrease above TA ≥ 400°C is observed. This behavior is consistent with the TA dependence of the magnitude of 4-terminal nonlocal magnetoresistance (MR) signals. The spin polarization estimated from the 3-terminal narrow Hanle signals and the magnitude of 2-terminal local MR signals show a slight improvement with increasing post annealing temperature with a peak at around 325°C and then start reducing slowly. The slight increase in the spin signal would be due to high spin polarization of Co2FeSi as a result of structural ordering. The 2-terminal local MR signals do not vary significantly by annealing between as-deposited and TA = 400°C, indicating the robustness of our device. This result would be useful for future Si spintronics devices.

Harnessing spin precession with dissipation.

Non-collinear spin transport is at the heart of spin or magnetization control in spintronics devices. The use of nanoscale conductors exhibiting quantum effects in transport could provide new paths for that purpose. Here we study non-collinear spin transport in a quantum dot. We use a device made out of a single-wall carbon nanotube connected to orthogonal ferromagnetic electrodes. In the spin transport signals, we observe signatures of out of equilibrium spin precession that are electrically tunable through dissipation. This could provide a new path to harness spin precession in nanoscale conductors.