Magnetic Random Access Memory Research Articles

Performance Analysis of Spin Orbit Torque Magneto-Resistive RAM Caches in 4-core ARM Systems

Spin Orbit Torque Magnetic Random Access Memory (SOT–)MRAM is gaining interest as it eradicates several limitations posed by its predecessor Spin Transfer Torque (STT-)MRAM, yet inherits all its advantages. This work explores in detail, the suitability of SOT–MRAM implemented caches in different levels of memory hierarchy in comparison to conventional SRAM technology, over several performance parameters like area, energy consumption and execution time for an embedded benchmark suite. Our circuit-level analysis shows that SOT–MRAM outperforms SRAM for caches ([Formula: see text] KB), and only lags in area and read-access energy for smaller caches. A typical 512 KB SOT–MRAM cache improves area by 1%, read/write latency by 33/38%, and leakage by over 99% than that of SRAM memory technology. The architecture-level analysis confirms that on average SOT–MRAM is energy efficient by 74% in L1, 97.2% in L2 and 89.3% in both (i.e., L1 + L2) implementations against SRAM, for a 22[Formula: see text]nm technology node. We also estimate that SOT–MRAM only solution offers [Formula: see text]% energy savings and [Formula: see text]% better EDP than Hybrid (L1-SRAM and L2-SOT) memory hierarchy for multi-core ARM processors.

Comparative Study of Current-Induced Torque in Cr/CoFeB/MgO and W/CoFeB/MgO.

Orbital torque (OT) in magnetic heterostructures has been actively discussed in terms of its actual existence and usefulness in comparison to the spin-orbit torque (SOT) that shows promise for next-generation magnetoresistive random access memories. The objectives of this study are 2-fold: (i) making an apples-to-apples comparison in two representative stacks where OT and SOT are expected to dominate and (ii) examining the potential emergence of OT in archetypal SOT stacks. Cr/CoFeB/MgO and W/CoFeB/MgO are chosen as the OT- and SOT-dominant systems, respectively. Systematic variations in each layer's thicknesses reveal that (i) Cr/CoFeB/MgO exhibits substantial torque comparable to or even exceeding that of the W/CoFeB/MgO stack when Cr and CoFeB layers are especially thick and (ii) the torque in W/CoFeB/MgO changes sign with increasing W and CoFeB thicknesses, suggesting a crossover of the dominant mechanism from SOT to OT. The findings clarify the opportunities and challenges of devices leveraging SOT and OT.

Materials, Processes, Devices and Applications of Magnetoresistive Random Access Memory

Abstract Magnetoresistive random access memory (MRAM) is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution, particularly in cache functions within circuits. Although MRAM has achieved mass production, its manufacturing process still remains challenging, resulting in only a few semiconductor companies dominating its production. In this review, we delve into the materials, processes, and devices used in MRAM, focusing on both the widely adopted spin transfer torque (STT) MRAM and the next-generation spin-orbit torque (SOT) MRAM. We provide an overview of their operational mechanisms and manufacturing technologies. Furthermore, we outline the major hurdles faced in MRAM manufacturing and propose potential solutions in detail. Then, the applications of MRAM in artificial intelligent hardware is introduced. Finally, we present an outlook on the future development and applications of MRAM.

Evidence of Spin Reorientation from Γ4 to Γ2 and Sign Reversal Exchange Bias in CeCrO3 Nanoparticles

Herein, the temperature‐dependent magnetic structure and sign reversal exchange bias in CeCrO3 using magnetization data and time‐of‐flight neutron diffraction data which is given less attention among RCrO3 are investigated. While nuclear structural analysis using Rietveld refinement exhibits distorted orthorhombic structure within Pnma space group, temperature dependence of the magnetic structure using neutron diffraction reveals possible spin configurations, namely, Γ4, Γ2, and Γ1, within the temperature range of 6–300 K. Temperature‐dependent magnetization shows compensation temperature, Tcomp, at 58 K, spin reorientation temperature, TSR, at 15 K along with a Neel temperature, TN, at 260 K which is the outcome of the competition between canted antiferromagnetic ordering of Cr3+ ions and Ce3+ ions in CeCrO3. Furthermore, the magnetization versus magnetic field (M vs H) measurements indicate transition of the Γ4 spin structure to Γ2 spin structure around TSR which is further supported by reversible‐to‐irreversible changes observed in temperature‐dependent MFCC and MFCW. Moreover, a temperature‐driven sign reversal of exchange bias in CeCrO3 is observed, resulting from the competition between antiferromagnetic coupling between chromium moment (MCr) and cerium moment (MCe) in these nanoparticles. This intriguing behavior holds significant potential for the development of thermally assisted magnetic random access memory.

Study of the influence of nitrogen doping on magnetic anisotropy in CoFe/MgO thin films with different deposition sequences

Abstract The ferromagnetic (FM)/MgO structure multilayers with perpendicular magnetic anisotropy (PMA) play a crucial role in magnetic random-access memory. It is essential to explore the methods for modulating magnetic anisotropy and to clarify the underlying mechanisms. We study the regulation of the magnetic anisotropy with nitrogen (N) doping concentration (CN) in two samples: Ta/CoFe(N)/MgO/Ta (S1) and Ta/MgO/CoFe(N)/Ta (S2) with different deposition sequences. The S1 sample exhibits in-plane magnetic anisotropy (IMA) without N doping. And the sample presents PMA when CN = 15%. The S2 sample shows weak PMA without N doping, and the sample converts to IMA when CN = 15%. X-ray photoelectron spectroscopy is performed to evaluate the oxidation level of Fe at the CoFe/MgO interface by the peak area ratio of Fe oxide to Fe (ϵ). It is believed that excessively high and low ϵ values correspond to over-oxidation and under-oxidation of Fe, respectively. For films deposited in different sequences, both over-oxidation and under-oxidation lead to IMA, while moderate oxidation facilitates the formation of PMA. The microstructure analysis reveals that the N doping does not affect the crystallization of the films, indicating that magnetocrystalline anisotropy has a minor influence on the changes of K eff.

The single event upset hardened design of spin transfer torque magnetic random access memory read circuits at 40 nm technology

With the advancement of technology nodes, the challenging space radiation environment poses a significant threat to memory reliability. Spin transfer torque magnetic random access memory (STT-MRAM) is a formidable candidate for non-volatile memory for space applications due to its advantages of non-volatility, durability, speed and compatibility with CMOS technology. Although the STT-MRAM memory unit magnetic tunnel junction (MTJ) is naturally immune to radiation effects, the single event upset (SEU) affects the peripheral circuitry. A radiation-hardened circuit is proposed, which theoretically does not have ‘0' upset nodes and automatically recovers from ‘1' upset. Moreover, the circuit's radiation-hardened performance was corroborated through hybrid simulation utilizing 40-nm technology. The findings of this investigation hold significance for the use of space radiation-hardened STT-MRAM.

Co-optimizing of H-curing, stress, and thermal annealing—A more effective way for realizing FEOL-BEOL compatible eMRAM chip

Metallization, plasma, and thermal annealing used in magneto-resistive random access memory integration differs significantly from traditional interconnection processes, usually resulting in the device performance deterioration of metal-oxide-silicon field-effect transistors. Commonly used methods, such as hydrogen postalloying, may not be effective to recover performance when magneto-resistive random access memory is integrated. The study focused on the interplay between hydrogen content in the dielectric films, wafer configuration induced by film stress, and thermal annealing during the chip fabrication process. Post-thermal annealing can enhance the release of hydrogen from the dielectric films, which can repair the silicon–hydrogen bond breakage resulting from magneto-resistive random access memory integration. However, this process can also worsen wafer bowing in an undesired direction which is detrimental to the performance of metal-oxide-silicon field-effect transistors. Consequently, utilizing silicon nitride with specific hydrogen content, in conjunction with post-thermal annealing, can improve effectively both p-type and n-type metal-oxide-silicon field-effect transistors. This approach holds significant potential for application in more advanced technological nodes since it is compatible with traditional process and does not require more advanced fabrication equipment. Additionally, the resulting embedded magneto-resistive random access memory chips maintain competitive magnetic tunneling junction reliability in term of endurance and reflow resistivity.

Robust Electric-Field Control of Colossal Exchange Bias in CrI3 Homotrilayer.

Controlling exchange bias (EB) by electric fields is crucial for next-generation magnetic random access memories and spintronics with ultralow energy consumption and ultrahigh speed. Multiferroic heterostructures have been traditionally used to electrically control EB and interfacial ferromagnetism through weak/indirect coupling between ferromagnetic and ferroelectric films. However, three major bottlenecks (lattice mismatch, interface defects, and weak/indirect coupling in multiferroic heterostructures) remain, resulting in only a few tens of milli-tesla EB field. Here, this study reports a robust electric-field control recipe to dynamically tailor the EB effect in a pure CrI3 homotrilayer on a ferroelectric Y-doped HfO2 (HYO) substrate, and demonstrate a colossal and tunable EB field (HE) from -0.15 to +0.33 T, giving rise to an EB modulation of 0.48 T. The charge doping due to ferroelectric HYO film divides a homo-configuration of CrI3 homotrilayer into one antiferromagnetic (AFM) bilayer CrI3 and one ferromagnetic (FM) monolayer CrI3, favoring direct exchange coupling. The synergies of charge doping and electric field induce a transition of magnetic orders from AFM to FM phase in bilayer CrI3, which is also supported by first-principles calculations, leading to the robust electric control of colossal EB effect. The results therefore open numerous opportunities for exploring 2D spintronics, memories, and braininspired in-memory computing.

Tailoring magnetism in chromium-doped zinc cobalt ferrite nanostructure for advanced spintronic memory devices

Soft magnetic ferrites serve as a crucial component in a wide array of sensing and actuating applications across various industries, including consumer electronics, automotive systems, spintronics, and more. These materials also find utility in spintronics, particularly for next-generation magnetic random-access memory (MRAM) due to their excellent inductive properties, which enhance the performance and scalability of spintronic memory devices. This study focuses on fine-tuning soft magnetic ferrites for inductive applications by doping them with Cr ions. By utilizing advanced experimental techniques such as the vibrating sample magnetometer (VSM) for bulk magnetometry and X-ray magnetic circular dichroism (XMCD) alongside X-ray absorption spectroscopy for atomic studies, the research aims to investigate the structural, electronic, and magnetic properties of the nanoferrites. Addition of doping in the soft ferrites observes reduction in the general magnetic parameters, with the only exception being coercivity, which decreases from 381 Oe to 275 Oe as the doping concentration increases from x = 0 to x = 0.02, and then increases to 350 Oe at x = 0.03. Through such precise tuning of the nanoparticles, this study aims to investigate the controllable soft magnetic properties of the nanoferrites, thereby paving the way for fast access times, non-volatility, and low energy consumption, presenting a compelling alternative to conventional memory technologies.

Back-Side Stress to Ease p-MOSFET Degradation on e-MRAM Chips

Abstract Magnetoresistive random access memory process makes great contribution to threshold voltage deterioration of metal-oxide-silicon field-effect transistors, especially on p-type devices. Herein, a method was proposed to reduce threshold voltage degradation by utilizing back-side stress. Through the deposition of tensile material on the back side, positive charges generated by silicon-hydrogen bond breakage were inhibited, resulting in a potential reduction of threshold voltage shift by up to 20%. In addition, it was found that the method could only relieve silicon-hydrogen bond breakage physically, failing to provide a complete cure. However, it holds significant potential for applications where additional thermal budget is undesired. Furthermore, it was also concluded that the method used in this work was irreversible, with its effect sustained to the chip package phase, and it ensures competitive reliability of the resulting magnetic tunnel junction devices.

Thermal effects on damping determination of perpendicular MRAM devices by spin-torque ferromagnetic resonance

We report device-level damping measurements using spin-torque driven ferromagnetic resonance on perpendicular magnetic random-access memory cells. It is shown that thermal agitation enhances the apparent damping for cells smaller than about 55 nm. The effect is fundamental and does not reflect a true damping increase. In addition to the thermal effect, it is still found that device-level damping is higher than film-level damping and increases with decreasing cell size. This is attributed to edge damage caused by device patterning.

Swift heavy ion irradiation-induced enhancement of spin–orbit torque efficiency in Pt/Co/Ta trilayers

Increasing the efficiency of spin–orbit torque (SOT) is of great interest in applications for magnetic random access memory and logic devices due to decreased energy consumption. Here, we present that the SOT efficiency of Pt/Co/Ta films with perpendicular magnetic anisotropy can be improved by swift high-energy heavy Fe11+ ion irradiation, which is an effective method to alter crystallinity, interface roughness, and defects in ferromagnet/heavy metal heterostructures. Specifically, the Pt/Co/Ta films show an optimal SOT efficiency at ion fluence around 1.0 × 1013 ions/cm2 with the largest spin Hall angles reaching 0.59, which is the largest improvement of spin Hall angle by ion irradiation compared to previous studies using light ions. We demonstrate that the increase in SOT efficiency arises from structural changes in the Pt layer due to ion irradiation-induced damage effects at proper fluence, while the decrease in SOT efficiency is mainly attributed to the restoration of Pt crystallinity induced by beam-heating effects at high fluence. This work demonstrates that an appropriate ion irradiation process could improve the SOT efficiency and the spin Hall angle, thereby providing a way to develop future SOT-based spintronic devices.

Magnetic tunnel junctions with superlattice barriers

The urgent demand for high-performance emerging memory, propelled by artificial intelligence in internet of things (AIoT) and machine learning advancements, spotlights spin-transfer torque magnetic random-access memory as a prime candidate for practical application. However, magnetic tunnel junctions (MTJs) with a single-crystalline MgO barrier, which are central to magnetic random-access memory (MRAM), suffer from significant drawbacks: insufficient endurance due to breakdown and high writing power requirements. A superlattice barrier-based MTJ (SL-MTJ) is proposed to overcome the limitation. We first fabricated the MTJ using an SL barrier while examining the magnetoresistance and resistance-area product. Lower writing power can be achieved in SL-MTJs compared to MgO-MTJs. Our study may provide a new route to the development of MRAM technologies.

A robust deep learning attack immune MRAM-based physical unclonable function

The ubiquitous presence of electronic devices demands robust hardware security mechanisms to safeguard sensitive information from threats. This paper presents a physical unclonable function (PUF) circuit based on magnetoresistive random access memory (MRAM). The circuit utilizes inherent characteristics arising from fabrication variations, specifically magnetic tunnel junction (MTJ) cell resistance, to produce corresponding outputs for applied challenges. In contrast to Arbiter PUF, the proposed effectively satisfies the strict avalanche criterion (SAC). Additionally, the grid-like structure of the proposed circuit preserves its resistance against machine learning-based modeling attacks. Various machine learning (ML) attacks employing multilayer perceptron (MLP), linear regression (LR), and support vector machine (SVM) networks are simulated for two-array and four-array architectures. The MLP-attack prediction accuracy was 53.61% for a two-array circuit and 49.87% for a four-array circuit, showcasing robust performance even under the worst-case process variations. In addition, deep learning-based modeling attacks in considerable high dimensions utilizing multiple networks such as convolutional neural network (CNN), recurrent neural network (RNN), MLP, and Larq are used with the accuracy of 50.31%, 50.25%, 50.31%, and 50.31%, respectively. The efficiency of the proposed circuit at the layout level is also investigated for simplified two-array architecture. The simulation results indicate that the proposed circuit offers intra and inter-hamming distance (HD) with a mean of 0.98% and 49.96%, respectively, and a mean diffuseness of 49.09%.

Complementary Polarizer SOT-MRAM for Low-Power and Robust On-Chip Memory Applications

Complementary polarized spin-transfer torque magnetic random-access memory (CPSTT-MRAM) has been proposed to address the sensing reliability issues caused by the single-ended sensing of STT-MRAM. However, it results in a three-fold increase in the free layer (FL) area compared to STT-MRAM, leading to a higher write current. Moreover, the read and write current paths in this memory are the same, thus preventing the optimization of each operation. To address these, in this study, we proposed a complementary polarized spin-orbit torque MRAM (CPSOT-MRAM), which tackles these issues through the SOT mechanism. This CPSOT-MRAM retains the advantages of CPSTT-MRAM while significantly alleviating the high write current requirement issue. Furthermore, the separation of the read and write current paths enables the optimization of each operation. Compared to CPSTT-MRAM, the proposed CPSOT-MRAM achieves a 4.0× and 2.8× improvement in write and read power, respectively, and a 20% reduction in layout area.

Spin valve effect in the van der Waals heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Spintronic devices are regarded as prime candidates for addressing the demands of emergent applications such as in-memory computing and the Internet of Things, characterized by requirements for high speed, low energy consumption, and elevated storage density. Among these, spin valves, serving as fundamental structures of magnetic random-access memory, have garnered substantial attention in recent years. This study introduces an all van der Waals (vdW) heterostructure composed of Fe3GeTe2 (FGT)/tellurene/FGT, wherein a thin layer of Weyl semiconductor Te is interposed between two ferromagnetic FGT layers. The proposed configuration exhibits a characteristic spin valve effect at temperatures below 160 K. This effect is attributed to spin-dependent transport and spin-dependent scattering phenomena occurring at the interfaces of the constituent materials. Furthermore, as temperature decreases, the magnetoresistance ratio (MR) of the device increases, indicative of the heightened polarization ratio of FGT, with an MR of 0.43% achievable as the temperature approaches 5 K. This investigation elucidates the underlying operational mechanisms of two-dimensional spin valve devices and lays the groundwork for the realization of spin-based integrated circuits.

Development And Application of Magnetic Storage Technology

Magnetic storage technology plays an important role in modern information storage and is the main way of modern information storage. The basic principle is to define the different magnetization states of the magnetic medium as "1" and "0" in the binary, and to realize the storage of information by changing the magnetization state of the magnetic medium. This paper summarizes the basic principle of magnetic storage technology, the characteristics of longitudinal magnetic recording and perpendicular magnetic recording, and their respective advantages. At the same time, this paper also studies the structure, advantages, and development trend of hard disk drives and magnetic random-access memory based on magnetic storage technology. For the frontier of magnetic memory technology, this paper focuses on the physical properties of magnetic Skyrmions and the possibility of magnetic Skyrmions in magnetic memory devices. For the memory using magnetic Skyrmions, topological Hall effect and magnetoresistive effect can be used to complete the writing and reading of information. Finally, this paper is expected to review the importance of magnetic storage technology.

Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems

With the emergence of cutting-edge hardware systems such as cloud computing, edge computing, and on-chip neural network accelerators, how to design advanced memory strategies to substitute the traditional ones for maximizing the potential performance of non-volatile memory (NVM) under the existing hardware conditions, has become an urgent research issue for both academia and industrial communities. It is promising and innovative to improve computer systems in the layer of data exchanging with the emerging advanced semiconductor devices. In the paper, to address the inefficiencies of write-intensive, high power consumption, low hit rate and so on, which exist in hybrid magnetic random access memory cache systems, three novel cache replacement strategies and two cache prefetching strategies are put forward. The proposed triple novel replacement strategies, including historical frequency and time judgments, duplicate data-aware deletion, and dynamic relevance factors computing, can be utilized to compensate for the shortcomings of the traditional least recently used replacement strategy, respectively. In the two novel prefetching strategies, region distribution parameters and Listnet ranking network are imported into the caching process, respectively, to achieve optimized hitting performance. The simulation results demonstrate that the proposed replacement strategies can achieve up to 61.76%, 84.91%, 56.49%, and 53.21% optimization of write count, hit rate, dynamic power, and IPC compared to the conventional one. The proposed prefetching strategy can achieve up to 91.27%, 49.25% hit rate and IPC optimization. Meanwhile, the synthetic evaluation of the replacement and prefetching strategies are elaborated in the paper, including multi-core characteristics, information entropy, interplays and the performance constraints between replacement and prefetching mechanism, which would facilitate more credible ideas for future memory inefficiencies management and strategy design.

Efficient calculation of magnetocrystalline anisotropy energy using symmetry-adapted Wannier functions

Magnetocrystalline anisotropy, a crucial factor in magnetic properties and applications like magnetoresistive random-access memory, often requires extensive k-point mesh in first-principles calculations. In this study, we develop a Wannier orbital tight-binding model incorporating crystal and spin symmetries and utilize time-reversal symmetry to divide magnetization components. This model enables efficient computation of magnetocrystalline anisotropy. Applying this method to L10 FePt and FeNi, we calculate the dependence of the anisotropic energy on k-point mesh size, chemical potential, spin-orbit interaction, and magnetization direction. The results validate the practicality of the models to the energy order of 100[μeV/f.u.] for these systems.

Experimental demonstration of magnetic tunnel junction-based computational random-access memory

The conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence because much of the power and energy is consumed by constant data transfers between logic and memory modules. A new paradigm, called “computational random-access memory (CRAM),” has emerged to address this fundamental limitation. CRAM performs logic operations directly using the memory cells themselves, without having the data ever leave the memory. The energy and performance benefits of CRAM for both conventional and emerging applications have been well established by prior numerical studies. However, there is a lack of experimental demonstration and study of CRAM to evaluate its computational accuracy, which is a realistic and application-critical metric for its technological feasibility and competitiveness. In this work, a CRAM array based on magnetic tunnel junctions (MTJs) is experimentally demonstrated. First, basic memory operations, as well as 2-, 3-, and 5-input logic operations, are studied. Then, a 1-bit full adder with two different designs is demonstrated. Based on the experimental results, a suite of models has been developed to characterize the accuracy of CRAM computation. Scalar addition, multiplication, and matrix multiplication, which are essential building blocks for many conventional and machine intelligence applications, are evaluated and show promising accuracy performance. With the confirmation of MTJ-based CRAM’s accuracy, there is a strong case that this technology will have a significant impact on power- and energy-demanding applications of machine intelligence.