Spin Torque In Magnetic Tunnel Junctions Research Articles

Microwave artificial neurons based on magnetic tunnel junction nano-oscillators for image recognition and denoising

We report a microwave artificial neuron based on magnetic tunnel junction spin torque nano-oscillator (STNO). Based on STNO neurons, the three-layer full connected artificial neural network (ANN) are constructed to recognize handwritten digit with a produced accuracy of up to 90.95%. To address noise inherent in real circuits leads to poor recognition accuracy, we harness the frequency mutation characteristics of the STNO output near the critical threshold current for denoising handwritten digits corrupted by noise. Before and after denoising using the aforementioned ANN, the recognition accuracy is improved from 55.98% to 88.76%.

A high-speed single sideband generator using a magnetic tunnel junction spin torque nano-oscillator

An important property of spin-torque nano-oscillators (STNOs) is their ability to produce a frequency modulated (FM) signal, which is very critical for communication applications. We here demonstrate a novel single sideband (SSB) modulation phenomenon using a magnetic tunnel junction (MTJ)-based STNO, which saves transmission bandwidth and in principle should minimize attenuation for wireless communication. Experimentally, lower single sidebands (LSSBs) have been successfully demonstrated over a wide range of modulation frequency, fm = 150 MHz-1 GHz. The observed LSSBs are determined by the intrinsic properties of the device, which can be modeled well by a nonlinear frequency and amplitude modulation formulation and reproduced in macrospin simulations. Moreover, our macrospin simulation results show that the range of modulation current and modulation frequency for generating SSBs can be controlled by the field-like torque and biasing conditions.

Observation of thermally driven field-like spin torque in magnetic tunnel junctions

We report the thermally driven giant field-like spin-torque in magnetic tunnel junctions (MTJ) on application of heat current from top to bottom. The field-like term is detected by the shift of the magneto-resistance hysteresis loop applying temperature gradient. We observed that the field-like term depends on the magnetic symmetry of the MTJ. In asymmetric structures, with different ferromagnetic materials for free and fixed layers, the field-like term is greatly enhanced. Our results show that a pure spin current density of the order of 109 A/m2 can be produced by creating a 120 mK temperature difference across 0.9 nm thick MgO tunnelling barrier. Our results will be useful for writing MTJ and domain wall-based memories using thermally driven spin torque.

Twist in the bias dependence of spin torques in magnetic tunnel junctions

The spin-torque in magnetic tunnel junctions possesses two components that both depend on the applied voltage. Here, we develop a new method for the accurate extraction of this bias-dependence from experiments over large voltage ranges. We study several junctions with different magnetic layer structures of the top electrode. Our results obtained on junctions with symmetric CoFeB electrodes agree well with theoretical calculations. The bias-dependences of asymmetric samples, with top electrodes containing NiFe, however, are twisted compared to the quadratic form generally assumed. Our measurements reveal the complexity of spin-torque mechanisms at large bias.

Design of magnetic tunnel junction‐based tunable spin torque oscillator at nanoscale regime

This study proposes a spintronic based compact tunable nano-sized RF oscillator. The proposed design provides parametric performance improvement as compared with the designs already reported in literature. This design also offers higher operating frequency up to range of several GHz, which can be tuned by a DC bias current. The proposed magnetic tunnel junction-spin torque oscillators (MTJ-STO) model overcomes the limitation of low output power which is prime issue in spin torque oscillators (STOs). This is achieved by employing multi-stage amplifier with impedance matching stages. In addition to that, mutual phase locking mechanism of STOs is introduced to act as a remedy for broadening of the spectrum linewidth, which is a critical issue in traditional oscillators. The hybrid model presented in this study contains spin torque based MTJ, which is compatible with CMOS technology. The modelling of proposed circuit has been done in Verilog-A and simulation results have been verified using HSPICE.

Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model-Part I: Analytical Model of the MTJ STO

Magnetic tunnel junction (MTJ) spin torque oscillators (STO) have shown the potential to be used in a wide range of microwave and sensing applications. To evaluate potential uses of MTJ STO technology in various applications, an analytical model that can capture MTJ STO's characteristics, while enabling system- and circuit-level designs, is of great importance. An analytical model based on macrospin approximation is necessary for these designs since it allows implementation in hardware description languages. This paper presents a new macrospin-based, comprehensive and compact MTJ STO model, which can be used for various MTJ STOs to estimate the performance of MTJ STOs together with their application-specific integrated circuits. To adequately present the complete model, this paper is divided into two parts. In Part I, the analytical model is introduced and verified by comparing it against measured data of three different MTJ STOs, varying the angle and magnitude of the magnetic field, as well as the DC biasing current. The proposed analytical model is suitable for being implemented in Verilog-A and used for efficient simulations at device-, circuit- and system-levels. In Part II, the full Verilog-A implementation of the analytical model with accurate phase noise generation is presented and verified by simulations.

Time-resolved measurement of spin-transfer-driven ferromagnetic resonance and spin torque in magnetic tunnel junctions

Several experimental techniques have been introduced in recent years in attempts to measure spin transfer torque in magnetic tunnel junctions (MTJs). The dependence of spin torque on bias is important for understanding fundamental spin physics in magnetic devices and for applications. However, previous techniques have provided only indirect measures of the torque and their results to date for the bias dependence are qualitatively and quantitatively inconsistent. Here we demonstrate that spin torque in MTJs can be measured directly by using time-domain techniques to detect resonant magnetic precession in response to an oscillating spin torque. The technique is accurate in the high-bias regime relevant for applications, and because it detects directly small-angle linear-response magnetic dynamics caused by spin torque it is relatively immune to artifacts affecting competing techniques. At high bias we find that the spin torque vector differs markedly from the simple lowest-order Taylor series approximations commonly assumed.

Temporal Coherence of MgO Based Magnetic Tunnel Junction Spin Torque Oscillators

Single-shot, time-resolved measurements are presented to investigate the temporal coherence of the microwave emission for MgO based magnetic tunnel junction spin torque oscillators. The time-domain data reveal that the steady state regime obtained from frequency-domain analysis can be subdivided into two regimes as a function of spin polarized current amplitude. According to these two regimes, two mechanisms that limit the temporal coherence are identified. At low current, extinctions of the steady state oscillations lead to a very short coherence time on the order of a few nanoseconds, while at higher current, the extinctions vanish and the coherence time saturates around 40 ns. As an important result it is shown that the latter is limited by frequency fluctuations. Quenching these frequency fluctuations suggests an intrinsic linewidth that is by a factor of 20 below the one of the free running oscillator.