Spin-torque Ferromagnetic Resonance Research Articles

Charge-spin interconversion in nitrogen sputtered Pt via extrinsic spin Hall effect.

We experimentally investigate the charge-spin interconversion by introducing a lighter impurity, namely nitrogen (N) into Pt by varying the nitrogen gas flow rate,Qfrom 0 to 20%, and studying the Onsager reciprocity of spin Hall effect (SHE) via complementary methods of spin-torque ferromagnetic resonance and spin-pumping inverse SHE measurements, respectively. We notice a reduction in the crystalline nature of Pt upon nitrogen incorporation. We observe the influence of extrinsic side-jump scattering induced SHE by measuring the spin Hall efficiency,θSHin a wide temperature range from 10 to 296 K. This work establishes the incorporation of N in Pt by using sputtering, to enhance the SHE via extrinsic scattering as well as to observe the reciprocal effects of charge-spin interconversion.

Interfacial Modulation of Spin-Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe3.

Two-dimensional van der Waals (2D vdW) materials are widely used in spin-orbit torque (SOT) devices. Recent studies have demonstrated the low crystal symmetry and large spin Hall conductivity of 2D vdW ZrSe3, indicating its potential applications in low-power SOT devices. Here, we study the interfacial contribution of SOTs and current-induced magnetization switching in the ZrSe3/Py (Ni80Fe20) and ZrSe3/Cu/Py heterostructures. SOT efficiencies of samples are detected by the spin-torque ferromagnetic resonance (ST-FMR), and out-of-plane damping-like torque (τB) is observed. The ratio between τB and the field-like torque (τA) decreases from 0.175 to 0.138 when inserting 1 nm Cu at the interface and then drops to 0.001 when the thickness of Cu intercalation is 2 nm, indicating that Cu intercalation inhibits the τB component of SOT. Moreover, the SOT efficiency is increased from 3.05 to 5.21, which may be attributed to the Cu intercalation being beneficial to improve the interface between Py and ZrSe3. Theoretical calculation has shown that the Cu spacer can change the conductivity of ZrSe3 from semiconductor to conductor, thereby decreasing the Schottky barrier and increasing the transmission efficiency of the spin current. Furthermore, magneto-optical Kerr effect (MOKE) microscopy is employed to verify the current-driven magnetization switching in these structures. In comparison to the ZrSe3/Py bilayer, the critical current density of ZrSe3/Cu/Py is reduced when inserting 1 nm Cu, demonstrating the higher SOT efficiency and lower power consumption in ZrSe3/Cu/Py structures.

Influence of exchange bias on spin torque ferromagnetic resonance for quantification of spin–orbit torque efficiency

Antiferromagnet (AFM)/ferromagnet (FM) heterostructure is a popular system for studying the spin–orbit torque (SOT) of AFMs. However, the interfacial exchange bias field induces that the magnetization in FM layer is noncollinear to the external magnetic field, namely the magnetic moment drag effect, which further influences the characteristic of SOT efficiency. In this work, we study the SOT efficiencies of IrMn/NiFe bilayers with strong interfacial exchange bias by using spin-torque ferromagnetic resonance (ST-FMR) method. A full analysis on the AFM/FM systems with exchange bias is performed, and the angular dependence of magnetization on external magnetic field is determined through the minimum rule of free energy. The ST-FMR results can be well fitted by this model. We obtained the relative accurate SOT efficiency ξ DL = 0.058 for the IrMn film. This work provides a useful method to analyze the angular dependence of ST-FMR results and facilitates the accurate measurement of SOT efficiency for the AFM/FM heterostructures with strong exchange bias.

Substrate-induced spin-torque-like signal in spin-torque ferromagnetic resonance measurement

Substrate-induced spin-torque-like signal in spin-torque ferromagnetic resonance measurement

Enhanced effective spin Hall efficiency contributed by the extrinsic spin Hall effect in Pt1- x Ta x /CoFeB structures

High effective spin Hall efficiency and low magnetic damping constant are essential to achieve efficient spin-charge conversion for energy-efficient spintronic devices. We report the measurements of effective spin Hall efficiency and magnetic damping constant of Pt1- x Ta x /CoFeB structures using spin-torque ferromagnetic resonance (ST-FMR) techniques. With the increase of Ta content, the spin Hall efficiency increases and peaks x = 0.15 with the value of θSHeff=0.35 , before decreases for further Ta content. This non-monotonic variation is attributed to the interaction between the contribution of the extrinsic skew scattering mechanism and the spin-orbit coupling (SOC). The weakening of the SOC in the Pt1-x Ta x layer leads to a decrease in the effective magnetic damping constant with increasing Ta concentration. High-temperature ST-FMR measurements confirm the influence of the Ta concentration on the spin Hall effect and magnetic damping mechanism. Additionally, the decrease in spin mixing conductance and the increase in spin diffusion length leads to a decrease in the interfacial spin transparency.

Spin Torque Ferromagnetic Resonance Measurements in a Bulk Rashba System

While many researchers have focused on the interfacial Rashba effect, bulk Rashba materials have received considerable interest due to their potential to enhance spin–orbit torque (SOT). By utilizing GeTe as a bulk Rashba material in the role of a spin–orbit channel, GeTe/Ni81Fe19 and GeTe/Co40Fe40B20 bilayers are fabricated, and SOTs are investigated using the spin torque ferromagnetic (FM) resonance technique. In this method, damping‐like and field‐like SOTs are extracted individually, excluding thermal effects. Upon analyzing the data, a remarkable field‐like SOT efficiency of 0.40 is obtained from the GeTe/Ni81Fe19 system. This high efficiency is attributed to the enhancement of interfacial spin–orbit coupling through the bulk Rashba effect of the GeTe channel. Moreover, noticeable distinctions in SOTs are observed between the Co40Fe40B20 and Ni81Fe19 interfaces, underscoring the importance of selecting the appropriate FM layer for optimizing SOT efficiency. This study highlights the promising potential of bulk Rashba materials like GeTe in advancing SOT‐based devices.

Enhanced spin–orbit torques in strained NiFe/Pt bi-layers on flexible substrate

Magnetization manipulation caused by spin–orbit torque is one of the central themes investigated in spintronics domain. The spin–orbit torque efficiencies can be manoeuvred by application of mechanical strain. In this direction, this study furthers the effort in understanding the evolution of spin–orbit torque efficiencies in mechanically strained ferromagnet (FM)/heavy metal(HM) (Ni81Fe19/Pt) bi-layer films on flexible kapton substrate, by the use of spin torque ferromagnetic resonance (ST-FMR) measurement technique. We report a tensile strain induced enhancement in damping-like and field-like spin–orbit torque efficiencies. The effective damping-like spin torque conductivity increased by 42% on the application of 0.312% tensile strain, which is encouraging from the magnetization switching application point of view. In order to investigate the driving factors behind the enhanced damping-like spin torque conductivity, ab-initio calculations were also carried out. Our findings provide insights into the workings of strain in FM/HM bi-layer stack and is a step forward in the implementation of flexible spintronics devices.

Side-jump scattering enhanced spin Hall effect in SrTiO3-implanted Pt

A spin Hall effect (SHE) enables the electrical generation and detection of spin currents for promising applications in spintronics, but heavy metals with low spin Hall angle θSH limit the development of SHE devices. In this work, we have introduced dielectric oxide material SrTiO3 into Pt by magnetron sputtering and measured the θSH on the NiCo/Pt1–x(STO)x heterostructure through spin-torque ferromagnetic resonance. Our results demonstrate that the maximum spin Hall angle in Pt0.98(STO)0.02 is 0.121 ± 0.003, which is approximately twice that of pure Pt (0.064 ± 0.003). Moreover, theoretical analysis has revealed that the spin Hall angle arises from a complementary interplay between intrinsic and extrinsic mechanisms, namely, the strong spin–orbit coupling in Pt for the intrinsic mechanism and side-jump scattering caused by scalar potential and lattice expansion at dielectric impurities for the extrinsic mechanism. This interplay significantly contributes to enhancing the spin Hall angle. This work demonstrates an effective strategy for fabricating high-performance spin Hall materials with low resistivity, large spin Hall angle, and excellent compatibility with semiconductor processes in low-power spin-torque devices.

Generation of out-of-plane polarized spin current by spin swapping

The generation of spin currents and their application to the manipulation of magnetic states is fundamental to spintronics. Of particular interest are chiral antiferromagnets that exhibit properties typical of ferromagnetic materials even though they have negligible magnetization. Here, we report the generation of a robust spin current with both in-plane and out-of-plane spin polarization in epitaxial thin films of the chiral antiferromagnet Mn3Sn in proximity to permalloy thin layers. By employing temperature-dependent spin-torque ferromagnetic resonance, we find that the chiral antiferromagnetic structure of Mn3Sn is responsible for an in-plane polarized spin current that is generated from the interior of the Mn3Sn layer and whose temperature dependence follows that of this layer’s antiferromagnetic order. On the other hand, the out-of-plane polarized spin current is unrelated to the chiral antiferromagnetic structure and is instead the result of scattering from the Mn3Sn/permalloy interface. We substantiate the later conclusion by performing studies with several other non-magnetic metals all of which are found to exhibit out-of-plane polarized spin currents arising from the spin swapping effect.

Efficient charge to spin conversion in iridium oxide thin films

Many 5d transition metal oxides have a unique electronic structure, where the density of states near the Fermi level is dominated by only 5d electrons with strong spin–orbit coupling. IrO2, a Dirac nodal line semi-metal, is the simplest of these oxides. The presence of 5d electrons and gap opening of Dirac nodal lines via strong spin–orbit coupling allows for the hybridization of the 5d electrons of the oxide with the itinerant d electrons of a ferromagnet, while simultaneously increasing the intrinsic spin Hall effect. We report large charge-to-spin conversion in thin films of this material using spin-torque ferromagnetic resonance experiments. By independently performing line shape analysis and linewidth modulation experiments, we conclusively determine the spin Hall angle of optimized IrO2 films to be ∼8 times larger than that of Pt.

Charge-to-spin conversion in fully epitaxial Ru/Cu hybrid nanolayers with interface control

The demonstration of the charge-to-spin conversion, especially with enhanced spin Hall conductivity, is crucial for the development of energy-efficient spintronic devices such as spin–orbit torque (SOT) based magnetoresistive random access memories. In this work, fully epitaxial Ru/Cu heterostructures were fabricated with interface engineering and nanolayer insertions consisting of Cu (1 nm)/Ru (1 nm) structures with different numbers of periods. The atomically controlled interface was confirmed by the high-resolution high-angle annular dark-field scanning transmission electron microscopy, and the epitaxial relationship persists even in the hybrid nanolayer insertion structures. The spin current generation was detected by the measurement of unidirectional spin Hall magnetoresistance, and the effective damping-like spin Hall efficiency (ξ DL) was further quantitatively evaluated by the spin-torque ferromagnetic resonance with thickness dependence of the ferromagnetic layer. It is found that the sharp interface Ru/Cu film has a sizeable ξ DL of −2.2% and the insertion of Cu/Ru nanolayers at the interface can increase the ξ DL value to −3.7%. The former could be attributed to the interface spin–orbit filtering effect and the latter may be further understood by the intrinsic contribution from the local electronic structure tuning due to the lattice distortion near the interface. A large effective spin Hall conductivity is achieved to be (3∼5) × 105 Ω−1 m−1 in the epitaxial Ru/Cu hybrid nanolayers, which is in the same range as that of platinum. This work indicates that the interfacial control with hybrid nanolayer structures can extend the SOT-based materials to highly conductive metals, even with weak spin–orbit interactions, toward high stability, low cost, and low energy consumption for spintronic applications.

The influence of Ti ultrathin insertion layer on the effective magnetic damping and effective spin Hall angle

We report the influence of ultrathin Ti insertion layer on the effective magnetic damping and effective spin Hall angle in Co/[Pt/Ti]n/Pt structures via spin-torque ferromagnetic resonance measurements. The effective magnetic damping shows a non-monotonic variation as a function of insertion layers number n, reaching a minimum at n = 5. Our analysis shows that when n is less than 5, the damping is mainly related to the thickness of the bottom Pt layer, and when it is greater than 5, the attenuation of the spin currents leads to increased damping. The effective magnetic damping first decreases as the number of layers n increases, reaching a minimum at n=5, and then increases with further increases in n. The observation can be ascribed to a competition between the increased longitudinal resistivity, which is due to the strong interfacial scattering, and the reduced effective spin Hall conductivity that originates from the shortening of the carrier lifetime. Additionally, the extracted interfacial spin transparency is found to be improved with the effect of the insertion layer.

Investigation of spin–orbit torque performance with W/Cu-multilayers as spin current source

We study the W/Cu multilayers as a spin current source and the coherent spin–orbit torques in a Fe layer using the spin-torque ferromagnetic resonance (STFMR) technique. With increasing numbers of layers, the line shape of the STFMR signals changes from predominantly antisymmetric to predominantly symmetric. When using [W(0.5)/Cu(0.5)]5 as a spin current source, the symmetric amplitude increases by a factor of 5 compared to a single W layer. Simultaneously, the effective damping parameter also increases slightly due to enhanced spin pumping. Along with an increasing trend in the damping-like torque efficiency, this suggests that the extrinsic spin Hall effect is enhanced. Concurrently, the antisymmetric amplitude decreases significantly by a factor of 27, which indicates an increase in the field-like torque when multilayers are used as a spin current source.

Room‐Temperature Charge‐to‐Spin Conversion from Quasi‐2D Electron Gas at SrTiO3‐Based Interfaces

Interfacial two-dimensional electron gas (2DEG), especially the SrTiO3-based ones at the unexpected interface of insulators, have emerged to be a promising candidate for efficient charge-spin current interconversion. In this article, to gain insight into the mechanism of the charge-spin current interconversion at the oxide-based 2DEG, we focused on conducting interfaces between insulating SrTiO3 and two types of aluminium-based amorphous insulators, namely SrTiO3/AlN and SrTiO3/Al2O3, and estimated their charge-spin conversion efficiency, {\theta}_cs. The two types of amorphous insulators were selected to explicitly probe the overlooked contribution of oxygen vacancy to the {\theta}_cs. We proposed a mechanism to explain results of spin-torque ferromagnetic resonance (ST-FMR) measurements and developed an analysis protocol to reliably estimate the {\theta}_cs of the oxide based 2DEG. The resultant {\theta}_cs/t, where t is the thickness of the 2DEG, were estimated to be 0.244 nm-1 and 0.101 nm-1 for the SrTiO3/AlN and SrTiO3/Al2O3, respectively, and they are strikingly comparable to their crystalline counterparts. Furthermore, we also observe a large direct current modulation of resonance linewidth in SrTiO3/AlN samples, confirming its high {\theta}_cs and attesting an oxygen-vacancy-enabled charge-spin conversion. Our findings emphasize the defects' contribution to the charge-spin interconversion, especially in the oxide-based low dimensional systems, and provide a way to create and enhance charge-spin interconversion via defect engineering.

Self-Oscillations in a Nanogap Spin Hall Nano-Oscillator with a Perpendicularly Magnetized External Film

We study spin-current-induced magnetodynamics in a planar nanogap spin Hall nano-oscillator (SHNO) based on $\mathrm{Pt}/[\mathrm{Co}/\mathrm{Ni}{]}_{4}$ with a large perpendicular magnetic anisotropy (PMA) at in-plane field geometry. Two distinct dynamic modes are observed in the spin-torque ferromagnetic resonance (FMR) and the generated microwave spectra. The primary mode has a frequency above the FMR frequency and a significant blueshift of the frequency with the increasing current $I$, consistent with the propagating spin-wave mode. The secondary higher-frequency mode with a much weaker power intensity, discrete frequency jump, and a slight redshift of frequency is only observed at low fields below the saturation field of 2 kOe, suggesting that it is likely related to the emerged domain region with in-plane magnetization due to grain-boundary defects, which is further supported by the frequency enhancement with reducing temperature. The primary propagating mode decreases its frequency and broadens its minimum linewidth by reducing the temperature, indicating that the frequency-drift instability dominates its dynamical decoherence due to the boundary-pinning effect. Furthermore, the micromagnetic simulation reproduces the experimentally observed propagating spin-wave and in-plane domain modes, and provides their spatial characteristics. Our demonstrated propagating spin waves in a SHNO with an out-of-plane magnetization extended bilayer can facilitate long-distance mutual synchronization in the SHNO network arrays for enhancing coherence and power as spin-wave sources in magnon-based devices or spin-based neuromorphic computing.

Spin-torque generation using a compositional gradient at the interface between titanium and tungsten thin films

We experimentally demonstrate spin-torque generation using a compositional gradient at the interface between titanium and tungsten thin films. The width of the compositional gradient interface (CGI) between films is varied from 1.4 to 2.0 nm via sputtering. Spin-torque ferromagnetic resonance is observed in the ferromagnetic ${\mathrm{Ni}}_{95}{\mathrm{Cu}}_{5}$ alloy fabricated on a Ti/W bilayer with the CGI. The positive spin torque increases with decreasing CGI width, but a negative spin torque is superimposed owing to the negative spin Hall effect in bulk tungsten. A structural undulation in the CGI eliminates this variation in positive spin torque. The CGI width dependence of the spin torque is associated with the generation of spin and/or orbital angular momentum flow at the CGI. Spin-torque generation using a CGI expands the range of material choice for magnetic nonvolatile memory applications.

Spin-Current-Driven Permeability Variation for Time-Varying Magnetic Metamaterials

We study permeability ($\ensuremath{\mu}$) variation of a lithographically prepared magnetic meta-atom consisting of $\mathrm{Ta}$/Py/$\mathrm{Pt}$ trilayers by means of spin-torque ferromagnetic resonance (ST FMR). With an injection of a direct current up to $\ifmmode\pm\else\textpm\fi{}20\phantom{\rule{0.2em}{0ex}}\mathrm{mA}$ together with an alternating current in GHz frequencies, the meta-atom under external magnetic fields shows significant changes in position and width of ST FMR signals due to a massive spin-current injection. This leads to the spin-current-driven $\ensuremath{\mu}$ variation, which is verified by analytical calculation based upon the experimentally obtained resonance field and Gilbert-damping parameter. The present study paves a way to time-varying spintronic metamaterials with a high modulation frequency for realizing microwave sources toward the post-fifth-generation mobile-communication system.

Enhancement of spin-charge conversion efficiency for Co3Sn2S2 across transition from paramagnetic to ferromagnetic phase

Co$_{3}$Sn$_{2}$S$_{2}$ (CSS) is one of the shandite compounds and becomes a magnetic Weyl semimetal candidate below the ferromagnetic phase transition temperature ($\textit{T}_\textrm{C}$). In this paper, we investigate the temperature ($\textit{T}$) dependence of conversion between charge current and spin current for the CSS thin film by measuring the spin-torque ferromagnetic resonance (ST-FMR) for the trilayer consisting of CSS / Cu / CoFeB. Above $\textit{T}_\textrm{C}$ ~ 170 K, the CSS / Cu / CoFeB trilayer exhibits the clear ST-FMR signal coming from the spin Hall effect in the paramagnetic CSS and the anisotropic magnetoresistance (AMR) of CoFeB. Below $\textit{T}_\textrm{C}$, on the other hand, it is found that the ST-FMR signal involves the dc voltages ($\textit{V}_\textrm{dc}$) not only through the AMR but also through the giant magnetoresistance (GMR). Thus, the resistance changes coming from both AMR and GMR should be taken into account to correctly understand the characteristic field angular dependence of $\textit{V}_\textrm{dc}$. The spin Hall torque generated from the ferromagnetic CSS, which possesses the same symmetry as that for spin Hall effect, dominantly acts on the magnetization of CoFeB. A definite increase in the spin-charge conversion efficiency ($\xi$) is observed at $\textit{T}$ < $\textit{T}_\textrm{C}$, indicating that the phase transition to the ferromagnetic CSS promotes the highly efficient spin-charge conversion. In addition, our theoretical calculation shows the increase in spin Hall conductivity with the emergence of magnetic moment at $\textit{T}$ < $\textit{T}_\textrm{C}$, which is consistent with the experimental observation.

Observation of large spin conversion anisotropy in bismuth

While the effective g-factor can be anisotropic due to the spin-orbit interaction (SOI), its existence in solids cannot be simply asserted from a band structure, which hinders progress on studies from such viewpoints. The effective g-factor in bismuth (Bi) is largely anisotropic; especially for holes at T-point, the effective g-factor perpendicular to the trigonal axis is negligibly small (<0.112), whereas the effective g-factor along the trigonal axis is very large (62.7). We clarified in this work that the large anisotropy of effective g-factor gives rise to the large spin conversion anisotropy in Bi from experimental and theoretical approaches. Spin-torque ferromagnetic resonance was applied to estimate the spin conversion efficiency in rhombohedral (110) Bi to be 17 to 27%, which is unlike the negligibly small efficiency in Bi(111). Harmonic Hall measurements supportthelarge spin conversion efficiency in Bi(110). A large spin conversion anisotropy as the clear manifestation of the anisotropy of the effective g-factor is observed. Beyond the emblematic case of Bi, our study unveiled the significance of the effective g-factor anisotropy in condensed-matter physics and can pave a pathway toward establishing novel spin physics under g-factor control.

Enhancement of interfacial spin transparency in Py/NiO/Pt heterostructure

This work reports the enhancement of damping-like and field-like spin–orbit torque (SOT) efficiencies and interfacial spin transparency (Tin) in the Py/NiO/Pt heterostructure. The SOT efficiencies and Tin are characterized by combining the spin–torque ferromagnetic resonance (ST-FMR) and the spin-pumping (SP) techniques. The inevitable inverse spin Hall voltage contamination induced by SP in the ST-FMR spectrum is extracted and subtracted by combining additional SP measurements, which allows obtaining accurate SOT efficiencies and Tin. The damping-like and field-like SOT efficiencies vary with the NiO insertion layer thickness, which is a result of the change of Tin. The maximum Tin reaches ∼0.82 for a 0.6 nm-thick NiO layer. This work shows that NiO insertion is an effective method for enhancing Tin and, hence, the SOT efficiency.