Spin-torque Ferromagnetic Resonance Research Articles

Lead-Free Hybrid Perovskite: An Efficient Room-Temperature Spin Generator via Large Interfacial Rashba Effect.

Two-dimensional (2D) hybrid organic-inorganic perovskite (HOIP) shows great potential for developing flexible and wearable spintronic devices by serving as spin sources via the bulk Rashba effect (BRE). However, the practical application of BRE in 2D HOIP faces huge challenges, particularly due to the toxicity of lead, which is crucial for achieving large spin-orbit coupling, and the restrictions in 2D HOIP candidates to meet specific symmetry-breaking requirements. To overcome these obstacles, we designed a strategy to exploit the interfacial Rashba effect (IRE) of lead-free 2D HOIP (C6H5CH2CH2NH3)2CuCl4 (PEA-CuCl), manifesting as an efficient spin generator at room temperature. IRE of PEA-CuCl originates from the large orbital hybridization at the interface between PEA-CuCl and adjacent ferromagnetic layers. Spin-torque ferromagnetic resonance measurements further quantify a large Rashba effective field of 14.04 Oe per 1011 A m-2, surpassing those of lead-based HOIP and traditional all-inorganic heterojunctions with noble metals. Our lead-free 2D HOIP PEA-CuCl, which harnesses large IRE for spin generation, is efficient, nontoxic, and economic, offering huge promise for future flexible and wearable spintronic devices.

Electrical Excitation and Detection of Chiral Magnons in a Compensated Ferrimagnetic Insulator.

Magnon chirality refers to the precessional handedness of magnetization around the external magnetic field, which is fixed as right-handed in ferromagnets. Compensated ferrimagnets accommodate parallel and antiparallel configurations of net magnetization and angular momentum, and thus serve as an ideal platform for studying magnon chirality. Through performing spin-torque ferromagnetic resonance experiments, we experimentally study the reversal of low-frequency magnon chirality across the magnetization and angular momentum compensation temperatures in a Gd_{3}Fe_{5}O_{12}/Pt bilayer. In particular, we demonstrate that dampinglike spin torque could sensitively excite and detect the reversal of low-frequency magnon chirality. By solving the coupled Landau-Lifshitz-Gilbert equations, the close correlation between the reversal of low-frequency magnon chirality and the sign of net angular momenta is established. The electrical excitation and detection of low-frequency magnon chirality in compensated ferrimagnetic insulators could be useful for building chiral spintronics.

Manipulating Charge-to-Spin conversion via insertion layer control at the interface of topological insulator and ferromagnet

Strong spin–orbit coupling and highly spin-polarized surface states in topological insulators (TIs) are key parameters that explain their extremely high charge-to-spin conversion (CSC) efficiency at interfaces with ferromagnetic materials (FMs). This study focused on the influence of the insertion layer on the proximity effect occurring in a Co4Fe4B2/Bi2Se3 interface. Various insertion layers, including Au, MgO, and Se, were introduced to modulate the proximity effect from TI to FM and vice versa. X-ray photoelectron spectroscopy and transmission electron microscopy revealed that the Se insertion layer effectively suppresses the formation of an additional Bi layer, reducing intermixing against Co4Fe4B2. Electrical transport properties such as RXX and RXY under a vertical magnetic field show that the Se-inserted structure features the lowest anomalous Hall angle and exhibits a pristine topological surface state, indicating its potential for improving CSC efficiency. The Se-inserted structure exhibits the highest spin Hall angle among various heterostructures, according to results obtained from spin-torque ferromagnetic resonance. These findings highlight the importance of selecting an insertion layer and controlling the interface to optimize the spin-transport properties of TI-based spintronic devices and provide insights into the design of future spin devices.

Harnessing orbital Hall effect for efficient orbital torque in light metal vanadium

The orbital Hall effect depicts the conversion of charge current to orbital current in nonmagnetic materials without spin–orbit coupling. This absence of spin–orbit coupling enables the light metals serve as sources of orbital current exploited as the information carrier to be applied to the information technology. Here, we investigate current-induced torques in vanadium/ferromagnet (V/FM, FM = Fe, Co, Ni81Fe19) bilayers via spin-torque ferromagnetic resonance (ST-FMR) system. The sign reversal confirms that the orbital Hall effect exists in light metal V, and the orbital torque in V/Co and V/Ni81Fe19 bilayers is dominant. By performing the V thickness dependence of conversion efficiency, we determined the orbital diffusion length of 3.61 nm for V. Our experiment demonstrates that light metals can be used as novel materials in spin–orbit devices, and our research focuses on the orbital freedom of the electron and provides new content for the study of orbital dynamics.

Quantifying spin-torque efficiency and magnetoresistance coefficient by microwave photoresistance in spin-torque ferromagnetic resonance

During the spin-torque ferromagnetic resonance (ST-FMR) measurement, the magnetization precession driven by the microwave field yields the radio frequency (rf) oscillating magnetoresistance and its time-averaged change (photoresistance). Here, we find that the strength of photoresistance can be directly determined by using dc bias current Idc modulating the symmetric component VS of the ST-FMR voltage spectrum. By measuring the angular dependence of photoresistance, we can quantify the in-plane and out-of-plane precession angles of ST-FMR, the actual rf current distribution in the magnetic and non-magnetic sublayers, and the magnitude of spin-torque and various magnetoresistance coefficients. These experimentally obtained values and analysis methods can more accurately quantify the spin-torque efficiency of both in-plane and out-of-plane spin polarizations by self-consistent calculation of the precession angle without harsh assumptions. And, we further confirm this universal method in three spintronic systems: the prototypical Pt/Py bilayer with anisotropic magnetoresistance (AMR), Py/Cu/Co20Tb80 spin valve trilayer with AMR and giant magnetoresistance, and [Co/Ni]3/Co/Pt multilayer with AMR and anisotropic interface magnetoresistance. This method eliminates potential deviation in calculating spin-torque efficiency by previously reported line shape analyzation and linewidth modulation methods of the ST-FMR technique and significantly extends its application range in characterizing spintronic materials and nanodevices.

Thermal effects on damping determination of perpendicular MRAM devices by spin-torque ferromagnetic resonance

We report device-level damping measurements using spin-torque driven ferromagnetic resonance on perpendicular magnetic random-access memory cells. It is shown that thermal agitation enhances the apparent damping for cells smaller than about 55 nm. The effect is fundamental and does not reflect a true damping increase. In addition to the thermal effect, it is still found that device-level damping is higher than film-level damping and increases with decreasing cell size. This is attributed to edge damage caused by device patterning.

Unraveling the negative charge-to-spin conversion in the Heusler alloy Co2FeSi

Recent discoveries of Heusler alloy achieve a strong advantage of the chemically disordered sample in the charge-to-spin conversion and attracted interests for spintronics applications. Here, we observe the negative charge-to-spin conversion in single magnetic layer of Co2FeSi/MgO and prove generations of σy and σx by spin-torque ferromagnetic resonance (ST-FMR). We also report that the change in charge-to-spin conversion efficiency could be controlled by chemical disordering. Furthermore, the thickness dependents of Co2FeSi demonstrated bulk effect is responsible for the generation of spin current. This study contributes to understanding the mechanisms of spin current generation from magnetic full Heusler alloy and also paves the way for the applications of magnetic memory and nonvolatile spin logic technologies.

Large-Area Intercalated Two-Dimensional Pb/Graphene Heterostructure as a Platform for Generating Spin-Orbit Torque.

A scalable platform to synthesize ultrathin heavy metals may enable high-efficiency charge-to-spin conversion for next-generation spintronics. Here, we report the synthesis of air-stable, epitaxially registered monolayer Pb underneath graphene on SiC (0001) by confinement heteroepitaxy (CHet). Diffraction, spectroscopy, and microscopy reveal that CHet-based Pb intercalation predominantly exhibits a mottled hexagonal superstructure due to an ordered network of Frenkel-Kontorova-like domain walls. The system's air stability enables ex situ spin torque ferromagnetic resonance (ST-FMR) measurements that demonstrate charge-to-spin conversion in graphene/Pb/ferromagnet heterostructures with a 1.5× increase in the effective field ratio compared to control samples.

Inverse Spin Hall Effect Dominated Spin-Charge Conversion in (101) and (110)-Oriented RuO_{2} Films.

Utilizing spin pumping, we present a comparative study of the spin-charge conversion in RuO_{2}(101) and RuO_{2}(110) films. RuO_{2}(101) shows a robust in-plane crystal-axis dependence, whereas RuO_{2}(110) exhibits an isotropic but stronger one. Symmetry-based analysis and first-principles calculations reveal that the spin-charge conversion in RuO_{2}(110) originates from the inverse spin Hall effect (ISHE) due to nodal lines splitting. In RuO_{2}(101), the ISHE also dominates although the inverse spin splitting effect (ISSE) may coexist. These findings, in sharp contrast to previously attributed ISSE, are further corroborated by the reciprocal relation between the spin pumping and the spin-torque ferromagnetic resonance measurements.

Spin–orbit torque effect in silicon-based sputtered Mn3Sn film

Abstract Noncollinear antiferromagnet Mn3Sn has shown remarkable efficiency in charge–spin conversion, a novel magnetic spin Hall effect, and a stable topological antiferromagnetic state, which has resulted in great interest from researchers in the field of spin–orbit torque. Current research has primarily focused on the spin–orbit torque effect of epitaxially grown noncollinear antiferromagnet Mn3Sn films. However, this method is not suitable for large-scale industrial preparation. In this study, amorphous Mn3Sn films and Mn3Sn/Py heterostructures were prepared using magnetron sputtering on silicon substrates. The spin-torque ferromagnetic resonance measurement demonstrated that only the conventional spin–orbit torque effect generated by in-plane polarized spin currents existed in the Mn3Sn/Py heterostructure, with a spin–orbit torque efficiency of 0.016. Additionally, we prepared the perpendicular magnetized Mn3Sn/CoTb heterostructure based on amorphous Mn3Sn film, where the spin–orbit torque driven perpendicular magnetization switching was achieved with a lower critical switching current density (3.9×107 A/cm2) compared to Ta/CoTb heterostructure. This research reveals the spin–orbit torque effect of amorphous Mn3Sn films and establishes a foundation for further advancement in the practical application of Mn3Sn materials in spintronic devices.

Spin-torque ferromagnetic resonance based on current-induced impedance

Spin-torque ferromagnetic resonance (ST-FMR) has been widely used for measuring damping-like spin–orbit torques in magnetic bilayers. Typically, the ratio between the damping-like and field-like spin–orbit torques are extrapolated based on the ferromagnetic resonance line shapes. However, when the field-like spin–orbit torque is unknown, the line shape analysis may lead to errors in extrapolating the damping-like spin–orbit torque. Here, we propose a modified version of the ST-FMR that allows extrapolation of both damping-like and field-like torques independently. By introducing an alternating current to the sample, the RF impedance is modulated, allowing detection via the reflected microwave. We show that the extrapolated field-like and damping-like torques in Py/Pt samples are consistent with the technique measuring current-induced linewidth and resonance field change but have much better signal-to-noise ratio. Our proposed method paves a way for more accurate measurement of spin–orbit torques.

Enhanced spin pumping in heterostructures of coupled ferrimagnetic garnets

Spin pumping has significant implications for spintronics, providing a mechanism to manipulate and transport spins for information processing. Understanding and harnessing spin currents through spin pumping is critical for the development of efficient spintronic devices. The use of a magnetic insulator with low damping enhances the signal-to-noise ratio in crucial experiments such as spin-torque ferromagnetic resonance (FMR) and spin pumping. A magnetic insulator coupled with a heavy metal or quantum material offers a more straightforward model system, especially when investigating spin-charge interconversion processes to greater accuracy. This simplicity arises from the absence of unwanted effects caused by conduction electrons unlike in ferromagnetic metals. Here, we investigate the spin pumping in coupled ferrimagnetic (FiM) Y3Fe5O12 (YIG)/Tm3Fe5O12 (TmIG) bilayers combined with heavy-metal (Pt) using the inverse spin Hall effect. It is observed that magnon transmission occurs at both of the FiMs FMR positions. The enhancement of spin pumping voltage (Vsp) in the FiM garnet heterostructures is observed. The plausible reason might be the interfacial exchange coupling between FiMs. The modulation of Vsp is achieved by tuning the bilayer structure. Further, the spin mixing conductance for these coupled systems is found to be ≈1018 m−2. Our findings describe a coupled FiM system for the investigation of magnon coupling providing opportunities for magnonic devices.

Enhanced Spin-Orbit Torque Efficiency in Platinum-Gadolinium Oxide Nanocomposite Films.

Spin-orbit torque (SOT) has emerged as an effective means of manipulating magnetization. However, the current energy efficiency of SOT operation is inefficient due to low damping-like SOT efficiency per unit current bias. In this work, we dope conventional rare earth oxides, GdOy, into highly conductive platinum by magnetron sputtering to form a new group of spin Hall materials. A large damping-like spin-orbit torque (DL-SOT) efficiency of about 0.35 ± 0.013 is obtained in Pt0.70(GdOy)0.30 measured by the spin-torque ferromagnetic resonance (ST-FMR) technique, which is about five times that of pure Pt under the same conditions. The substantial enhancement of the spin Hall effect is revealed by theoretical analysis to be attributed to the strong side jump induced by the rare earth oxide GdOy impurities. Moreover, this large DL-SOT efficiency contributes to a low critical switching current density (8.0 × 106 A·cm-2 in the Pt0.70(GdOy)0.30 layer) in current-induced magnetization switching measurements. This systematic study on SOT switching properties suggests that Pt1-x(GdOy)x is an attractive spin current source with large DL-SOT efficiency for future SOT applications and provides another idea to regulate the spin Hall angle.

Large out-of-plane spin–orbit torque in topological Weyl semimetal TaIrTe4

The unique electronic properties of topological quantum materials, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin-polarized current needed for external field-free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin–orbit torque (SOT) materials provide only an in-plane spin-polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin-polarized current components, which are not suitable for energy-efficient SOT applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using the topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin–torque ferromagnetic resonance (STFMR) and second harmonic Hall measurements on devices based on TaIrTe4/Ni80Fe20 heterostructures and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be (4.05 ± 0.23)×104 (ℏ ⁄ 2e) (Ωm)−1, which is an order of magnitude higher than the reported values in other materials.

Charge-spin interconversion in nitrogen sputtered Pt via extrinsic spin Hall effect.

We experimentally investigate the charge-spin interconversion by introducing a lighter impurity, namely nitrogen (N) into Pt by varying the nitrogen gas flow rate,Qfrom 0 to 20%, and studying the Onsager reciprocity of spin Hall effect (SHE) via complementary methods of spin-torque ferromagnetic resonance and spin-pumping inverse SHE measurements, respectively. We notice a reduction in the crystalline nature of Pt upon nitrogen incorporation. We observe the influence of extrinsic side-jump scattering induced SHE by measuring the spin Hall efficiency,θSHin a wide temperature range from 10 to 296 K. This work establishes the incorporation of N in Pt by using sputtering, to enhance the SHE via extrinsic scattering as well as to observe the reciprocal effects of charge-spin interconversion.

Interfacial Modulation of Spin-Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe3.

Two-dimensional van der Waals (2D vdW) materials are widely used in spin-orbit torque (SOT) devices. Recent studies have demonstrated the low crystal symmetry and large spin Hall conductivity of 2D vdW ZrSe3, indicating its potential applications in low-power SOT devices. Here, we study the interfacial contribution of SOTs and current-induced magnetization switching in the ZrSe3/Py (Ni80Fe20) and ZrSe3/Cu/Py heterostructures. SOT efficiencies of samples are detected by the spin-torque ferromagnetic resonance (ST-FMR), and out-of-plane damping-like torque (τB) is observed. The ratio between τB and the field-like torque (τA) decreases from 0.175 to 0.138 when inserting 1 nm Cu at the interface and then drops to 0.001 when the thickness of Cu intercalation is 2 nm, indicating that Cu intercalation inhibits the τB component of SOT. Moreover, the SOT efficiency is increased from 3.05 to 5.21, which may be attributed to the Cu intercalation being beneficial to improve the interface between Py and ZrSe3. Theoretical calculation has shown that the Cu spacer can change the conductivity of ZrSe3 from semiconductor to conductor, thereby decreasing the Schottky barrier and increasing the transmission efficiency of the spin current. Furthermore, magneto-optical Kerr effect (MOKE) microscopy is employed to verify the current-driven magnetization switching in these structures. In comparison to the ZrSe3/Py bilayer, the critical current density of ZrSe3/Cu/Py is reduced when inserting 1 nm Cu, demonstrating the higher SOT efficiency and lower power consumption in ZrSe3/Cu/Py structures.

Influence of exchange bias on spin torque ferromagnetic resonance for quantification of spin–orbit torque efficiency

Antiferromagnet (AFM)/ferromagnet (FM) heterostructure is a popular system for studying the spin–orbit torque (SOT) of AFMs. However, the interfacial exchange bias field induces that the magnetization in FM layer is noncollinear to the external magnetic field, namely the magnetic moment drag effect, which further influences the characteristic of SOT efficiency. In this work, we study the SOT efficiencies of IrMn/NiFe bilayers with strong interfacial exchange bias by using spin-torque ferromagnetic resonance (ST-FMR) method. A full analysis on the AFM/FM systems with exchange bias is performed, and the angular dependence of magnetization on external magnetic field is determined through the minimum rule of free energy. The ST-FMR results can be well fitted by this model. We obtained the relative accurate SOT efficiency ξ DL = 0.058 for the IrMn film. This work provides a useful method to analyze the angular dependence of ST-FMR results and facilitates the accurate measurement of SOT efficiency for the AFM/FM heterostructures with strong exchange bias.

Substrate-induced spin-torque-like signal in spin-torque ferromagnetic resonance measurement

Substrate-induced spin-torque-like signal in spin-torque ferromagnetic resonance measurement

Enhanced effective spin Hall efficiency contributed by the extrinsic spin Hall effect in Pt1- x Ta x /CoFeB structures

High effective spin Hall efficiency and low magnetic damping constant are essential to achieve efficient spin-charge conversion for energy-efficient spintronic devices. We report the measurements of effective spin Hall efficiency and magnetic damping constant of Pt1- x Ta x /CoFeB structures using spin-torque ferromagnetic resonance (ST-FMR) techniques. With the increase of Ta content, the spin Hall efficiency increases and peaks x = 0.15 with the value of θSHeff=0.35 , before decreases for further Ta content. This non-monotonic variation is attributed to the interaction between the contribution of the extrinsic skew scattering mechanism and the spin-orbit coupling (SOC). The weakening of the SOC in the Pt1-x Ta x layer leads to a decrease in the effective magnetic damping constant with increasing Ta concentration. High-temperature ST-FMR measurements confirm the influence of the Ta concentration on the spin Hall effect and magnetic damping mechanism. Additionally, the decrease in spin mixing conductance and the increase in spin diffusion length leads to a decrease in the interfacial spin transparency.

Spin Torque Ferromagnetic Resonance Measurements in a Bulk Rashba System

While many researchers have focused on the interfacial Rashba effect, bulk Rashba materials have received considerable interest due to their potential to enhance spin–orbit torque (SOT). By utilizing GeTe as a bulk Rashba material in the role of a spin–orbit channel, GeTe/Ni81Fe19 and GeTe/Co40Fe40B20 bilayers are fabricated, and SOTs are investigated using the spin torque ferromagnetic (FM) resonance technique. In this method, damping‐like and field‐like SOTs are extracted individually, excluding thermal effects. Upon analyzing the data, a remarkable field‐like SOT efficiency of 0.40 is obtained from the GeTe/Ni81Fe19 system. This high efficiency is attributed to the enhancement of interfacial spin–orbit coupling through the bulk Rashba effect of the GeTe channel. Moreover, noticeable distinctions in SOTs are observed between the Co40Fe40B20 and Ni81Fe19 interfaces, underscoring the importance of selecting the appropriate FM layer for optimizing SOT efficiency. This study highlights the promising potential of bulk Rashba materials like GeTe in advancing SOT‐based devices.