Generation Of Spin-polarized Currents Research Articles

Generation of spin-polarized hot electrons at topological insulators surfaces by scattering from collective charge excitations

Topological insulators (TIs) are materials which exhibit topologically protected electronic surface states, acting as mass-less Dirac fermions. Beside their fascinating fundamental physics, TIs are also promising candidates for future spintronic devices. In this regard, generation of spin-polarized currents in TIs is the first and most important step towards their application in spin-based devices. Here we demonstrate that when electrons are scattered from the surface of bismuth selenide, a prototype TI, not only the elastic channel but also the inelastic channel is strongly spin dependent. In particular collective charge excitations (plasmons) excited at such surfaces show a large spin-dependent electron scattering. Electrons scattered by these excitations exhibit a high spin asymmetry, as high as 40%. The observed effect opens up new possibilities to generate spin-polarized currents at the surface of TIs or utilize the collective charge excitations to analyze the electrons’ spin. The results are also important to understand the spin polarization of the photo-excited electrons excited at TIs surfaces. Moreover, our finding will inspire new ideas for using these plasmonic excitations in the field of spin-plasmonics.

Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2

Electronic and spin structure of the Dirac-cone-like topological surface and valence band states were studied experimentally and theoretically for topological insulator with fractional stoichiometry Bi1.5Sb0.5Te1.8Se1.2 which is considered as one of the best candidates for efficient spin-polarized current generation. By means of spin- and angle-resolved photoelectron spectroscopy we demonstrate the separation of the Dirac point from the bulk states and the helical spin structure of the Dirac cone. For the freshly cleaved surface the Fermi level is located in the bulk band gap and an exposure in residual gases shifts the Fermi level towards the bulk conduction band. Results of the theoretical calculations are in a good agreement with the experimental data. Surface morphology study shows a well-structured atomically sharp surface after cleavage. The transport measurements confirm that this topological insulator has relatively high resistance with semiconductor-like temperature dependence at low temperatures. The studied Bi1.5Sb0.5Te1.8Se1.2 crystals demonstrated a quite large Seebeck coefficient values reaching −400 μV/K at room temperature.

Gigantic 2D laser-induced photovoltaic effect in magnetically doped topological insulators for surface zero-bias spin-polarized current generation

A new kind of 2D photovoltaic effect (PVE) with the generation of anomalously large surface photovoltage up to 210 meV in magnetically doped topological insulators (TIs) has been studied by the laser time-resolved pump-probe angle-resolved photoelectron spectroscopy. The PVE has maximal efficiency for TIs with high occupation of the upper Dirac cone (DC) states and the Dirac point located inside the fundamental energy gap. For TIs with low occupation of the upper DC states and the Dirac point located inside the valence band the generated surface photovoltage is significantly reduced. We have shown that the observed giant PVE is related to the laser-generated electron–hole asymmetry followed by accumulation of the photoexcited electrons at the surface. It is accompanied by the 2D relaxation process with the generation of zero-bias spin-polarized currents flowing along the topological surface states (TSSs) outside the laser beam spot. As a result, the spin-polarized current generates an effective in-plane magnetic field that is experimentally confirmed by the kII-shift of the DC relative to the bottom non-spin-polarized conduction band states. The realized 2D PVE can be considered as a source for the generation of zero-bias surface spin-polarized currents and the laser-induced local surface magnetization developed in such kind 2D TSS materials.

All-electrical generation of spin-polarized currents in quantum spin Hall insulators

The control and generation of spin-polarized currents (SPCs) without magnetic materials and external magnetic field is a big challenge in spintronics and normally requires spin-flip mechanism. In this work, we propose a novel method to control and generate SPCs in stanene nanoribbons in the quantum spin Hall (QSH) insulator regime by all electrical means without spin-flip mechanism. This is achieved with intrinsic spin-orbit coupling in stanene nanoribbons by tuning the relative phase of spin up and down electrons using a gate voltage, which creates a time delay between them thereby producing alternative SPCs driven by ac voltage. The control and generation of SPCs are demonstrated numerically for ac transport in both transient and ac regime. Our results are robust against edge imperfections and generally valid for other QSH insulators such as silicene and germanene, etc. These findings establish a novel route for generating SPCs by purely electrical means and open the door for new applications of semiconductor spintronics.

Spin-photo-currents generated by femtosecond laser pulses in a ferrimagnetic GdFeCo/Pt bilayer

Using THz emission spectroscopy, we detect spin-photo-currents from a ferrimagnetic amorphous alloy GdFeCo to an adjacent Pt capping layer. The currents are generated upon excitation of a GdFeCo/Pt heterostructure with femtosecond laser pulses. It is found that the polarization of the spin-polarized current is determined by magnetic sublattice sensitivity rather than the total magnetization, allowing for spin-polarized current generation when the net magnetization is zero.

Generation of spin-polarized currents via cross-relaxation with dynamically pumped paramagnetic impurities

Key to future spintronics and spin-based information processing technologies is the generation, manipulation, and detection of spin polarization in a solid state platform. Here, we theoretically explore an alternative route to spin injection via the use of dynamically polarized nitrogen-vacancy (NV) centers in diamond. We focus on the geometry where carriers and NV centers are confined to proximate, parallel layers and use a “trap-and-release” model to calculate the spin cross-relaxation probabilities between the charge carriers and neighboring NV centers. We identify near-unity regimes of carrier polarization depending on the NV spin state, applied magnetic field, and carrier g-factor. In particular, we find that unlike holes, electron spins are distinctively robust against spin-lattice relaxation by other, unpolarized paramagnetic centers. Further, the polarization process is only weakly dependent on the carrier hopping dynamics, which makes this approach potentially applicable over a broad range of temperatures.

Antiresonance induced spin-polarized current generation

According to the one-dimensional antiresonance effect (Wang X R, Wang Y and Sun Z Z 2003 Phys. Rev. B 65 193402), we propose a possible spin-polarized current generation device. Our proposed model consists of one chain and an impurity coupling to the chain. The energy level of the impurity can be occupied by an electron with a specific spin, and the electron with such a spin is blocked because of the antiresonance effect. Based on this phenomenon our model can generate the spin-polarized current flowing through the chain due to different polarization rates. On the other hand, the device can also be used to measure the generated spin accumulation. Our model is feasible with today's technology.

Spin-polarized current generation and detection by a double quantum dot structure

We propose a device acting as a spin valve which is based on a double quantum dot structure with parallel topology. Using the exact analytical solution for the noninteracting case we argue that, at a certain constellation of system parameters and externally applied fields, the electric current through the constriction can become almost fully spin polarized. We discuss the influence of the coupling asymmetry, finite temperatures, and interactions on the efficiency of the device and make predictions for the experimental realization of the effect.

Spin-polarized current generation from quantum dots without magnetic fields

An unpolarized charge current passing through a chaotic quantum dot with spin-orbit coupling can produce a spin-polarized exit current without magnetic fields or ferromagnets. We use random matrix theory to estimate the typical spin polarization as a function of the number of channels in each lead in the limit of large spin-orbit coupling. We find rms spin polarizations up to 45% with one input channel and two output channels. Finite temperature and dephasing both suppress the effect, and we include dephasing effects using a variation of the third lead model. If there is only one channel in the output lead, no spin polarization can be produced, but we show that dephasing lifts this restriction.

Manipulating Nonequilibrium Magnetism through Superconductors

Electrostatic control of the magnetization of a normal mesoscopic conductor is analyzed in a hybrid superconductor-normal-conductor-superconductor system. This effect stems from the interplay between the nonequilibrium condition in the normal region and the Zeeman splitting of the quasi-particle density of states of the superconductor subjected to a static in-plane magnetic field. Unexpected spin-dependent effects such as magnetization suppression, diamagnetic-like response of the susceptibility, as well as spin-polarized current generation are the most remarkable features presented. The impact of scattering events is evaluated and lets us show that this effect is compatible with realistic material properties and fabrication techniques.

Spin injection through the depletion layer: A theory of spin-polarizedp-njunctions and solar cells

A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all-semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized {\it p-n} junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.

Generation of spin-polarized currents in Zeeman-split Tomonaga-Luttinger models.

In a magnetic field an interacting electron gas in one dimension may be described as a Tomonaga-Luttinger model comprising two components with different Fermi velocities due to the Zeeman splitting. This destroys the spin-charge separation, and even the quantities such as the density-density correlation involve spin and charge critical exponents (K). Specifically, the ratio of the up-spin and down-spin conductivities in a dirty system diverges at low temperatures like an inverse power of the temperature, $T^{-(K_{\uparrow}-K_{\downarrow})}$, resulting in a spin-polarized current. In finite, clean systems the conductance becomes different for up- and down-spins as another manifestation of the electron-electron interaction.