Spin Hall Effect Research Articles

Current-induced spin polarization and spin Hall effect in III-V compounds two-dimensional materials

Current-induced spin polarization and spin Hall effect in III-V compounds two-dimensional materials

Extraction of two-magnon scattering and detection of inverse spin Hall effect up to 40 GHz inlow-damping Fe65Co35/Pt bilayer thin film

Abstract We report an investigation of the inverse spin Hall effect (ISHE), as a measure of the pure spin current (JS), induced by spin pumping in a Fe65Co35/Pt bilayer using coplanar waveguide ferromagnetic resonance (CPW-FMR) in the in-plane (IP) geometry over the broadband microwave frequency range of 8-40 GHz. From the IP-FMR measurements, the defect-induced two-magnon scattering (TMS) contribution is evaluated by analyzing the frequency dependence of FMR linewidth using Arias and Mills approach. Here, we have determined a very low Gilbert damping constant (αG) for Fe65Co35 bare film around 1.3 x 10−3, which is essential for the high spin current (> 107 A/m2) generation. The enhanced value of αG ≈ 3.2 x 10−3 obtained for Fe65Co35/Pt bilayer film is due to spin pumping damping, αSP = 1.9 x 10−3, confirmed by the ISHE induced DC voltage (VDC) signal measured across the edges of Pt layer. Out-of-plane (OP) angular ISHE measurements have been performed to disentangle spin pumping from spin rectification effects in the VDC signal. Further, we evaluated the effective spin-mixing conductance geff ↑↓ = 3.33 x 1019 m-2, which is higher than the values reported in FeCo-alloy-based bilayer systems. The present study aims to detect the JS injected by low-damping Fe65Co35 thin films, leading to the realization of energy-efficient spintronic devices.

Enhanced spin Hall ratio in two-dimensional semiconductors

The conversion efficiency from charge current to spin current via the spin Hall effect is evaluated by the spin Hall ratio (SHR). Through state-of-the-art ab initio calculations involving both charge conductivity and spin Hall conductivity, we report the SHRs of the III-V monolayer family, revealing an ultrahigh ratio of 0.58 in the hole-doped GaAs monolayer. In order to find more promising 2D materials, a descriptor for high SHR is proposed and applied to a high-throughput database, which provides the fully relativistic band structures and Wannier Hamiltonians of 216 exfoliable monolayer semiconductors and has been released to the community. Among potential candidates for high SHR, the MXene monolayer Sc2CCl2 is identified with the proposed descriptor and confirmed by computation, demonstrating the descriptor validity for high SHR materials discovery.

Coherent optical spin Hall transport for polaritonics at room temperature.

Spin or valley degrees of freedom hold promise for next-generation spintronics. Nonetheless, the macroscopic coherent spin current formations are still hindered by rapid dephasing due to electron scattering, specifically at room temperature. Exciton polaritons offer excellent platforms for spin-optronic devices via the optical spin Hall effect. However, this effect could neither be unequivocally observed at room temperature nor be exploited for practical spintronic devices due to the presence of strong thermal fluctuations or large linear spin splitting. Here we report the observation of room-temperature optical spin Hall effect of exciton polaritons, with the spin current flow over 60 μm in a formamidinium lead bromide perovskite microcavity. We provide direct evidence of long-range coherence in the flow of polaritons and the spin current carried by them. Leveraging the spin Hall transport of polaritons, we further demonstrate two polaritonic devices, namely, a NOT gate and a spin-polarized beamsplitter, advancing the frontier of room-temperature polaritonics in perovskite microcavities.

Multiferroic properties and the layer-stacking quantum anomalous Hall effect in two-dimensional RuOHX (X = F, Cl, Br)

Exploring the physics coupled with layer degrees of freedom in materials has become a hot topic in quantum layertronics. We propose a robust second-order topological insulator monolayer RuOHX (X = F, Cl, and Br), a two-dimensional ferromagnetic semiconductor with large valley polarization, capable of undergoing topological phase transition induced by strain effect. In the bilayer RuOHX, we achieve layer-polarized anomalous Hall effect through interlayer sliding, originating from layer-stacking Berry curvature. Moreover, it can be controlled and reversed by the direction of ferroelectric polarization. Under appropriate biaxial strain, the bilayer RuOHX exhibits quantum layer spin Hall effect in which the helical edge states are manifested as spin-chirality-locking, due to the degeneracy of layer-polarized quantum anomalous Hall effect. Our work explores the potential application via layer-stacking topological properties for future quantum device applications.

Hole and electron spin lifetime in lightly n-doped silicon at low temperatures

We report on photoinduced inverse spin-Hall effect (ISHE) measurements as a function of the incident photon energy in the 4–50 K temperature range for a Pt/n-doped Si junction. Optical spin injection allows generating a spin-oriented population of electrons and holes around the Δ valleys and Γ point of the Si Brillouin zone, respectively. Spin-polarized carriers cross the Pt/Si contact and then enter the Pt overlayer, where spin-to-charge conversion occurs by means of spin-dependent scattering with Pt nuclei. For temperatures T up to 20 K, most of the dopants are not ionized, so that the electric field, stemming from the contact potential between Pt and Si, extends to the whole Si substrate, which becomes insulating, and only spin-oriented holes reach the Pt layer and contribute to the ISHE spectra. For T>20 K, donors are partially ionized, and the resulting space charge close to the Pt/Si interface leads to the formation of a Schottky contact where the electric field rapidly vanishes within a few micrometers. As a consequence, also spin-polarized electrons enter Pt by means of thermionic emission, contributing to the ISHE signal. We numerically solve the one-dimensional spin drift-diffusion equations for holes and electrons and estimate the temperature dependence of the spin lifetime in Si for both populations, demonstrating that Si may serve as a versatile platform for spintronic applications, able to leverage both electrons and holes.

Circular photocurrents in centrosymmetric semiconductors with hidden spin polarization

Centrosymmetric materials with site inversion asymmetries possess hidden spin polarization, which remains challenging to be converted into spin currents because the global inversion symmetry is still conserved. This study demonstrates the spin-polarized circular photocurrents in centrosymmetric transition metal dichalcogenide semiconductors at normal incidence without applying electric bias. The global inversion symmetry is broken by using a spatially-varying circularly polarized light beam, which could generate spin gradient owing to the hidden spin polarization. The dependence of the circular photocurrents on electrode configuration, illumination position, and beam spot size indicates an emergence of circulating electric current under spatially inhomogeneous light, which is associated with the deflection of spin-polarized current through the inverse spin Hall effect. The circular photocurrents is subsequently utilized to probe the spin polarization and the inverse spin Hall effect under different excitation wavelengths and temperatures. The results of this study demonstrate the feasibility of using centrosymmetric materials with hidden spin polarization and non-vanishing Berry curvature for spintronic device applications.

Highly sensitive photonic spin Hall effect sensor with graphene-coated surface exciton polariton structure

Highly sensitive photonic spin Hall effect sensor with graphene-coated surface exciton polariton structure

Dirac fermions and spin transport in the SrVO3/SrTiO3 quantum well

The type-II Dirac fermions are characterized by a tilted Dirac cone and sustain exotic quantum transport phenomena. Here, we show the emergence of a type-II Dirac nodal loop in the SrVO3/SrTiO3 quantum well structure by density functional theory calculations and symmetry arguments. When the spin–orbit coupling (SOC) is neglected, the unavoidable crossing between two t2g bands gives rise to a nodal loop in the Brillouin zone, which is protected by the mirror symmetry. Such a nodal loop is fully gapped by including SOC, which results in a large spin Hall effect due to large spin Berry curvatures. Our findings add the unexplored functionality to oxide quantum wells and offer a practical platform to explore the interplay between topological fermions and spin transport phenomena.

Spin Hall effect in platinum deposited by atomic layer deposition

Spin Hall effect in platinum deposited by atomic layer deposition

Intrinsic anomalous, spin and valley Hall effects in ’ex-so-tic’ van-der-Waals structures

We consider the anomalous, spin, valley, and valley spin Hall effects in a pristine graphene-based van-der-Waals (vdW) heterostructure consisting of a bilayer graphene (BLG) sandwiched between a semiconducting van-der-Waals material with strong spin-orbit coupling (e.g., WS2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\hbox {WS}_2$$\\end{document}) and a ferromagnetic insulating vdW material (e.g. Cr2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\hbox {Cr}_2$$\\end{document}Ge2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\hbox {Ge}_2$$\\end{document}Te6\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\hbox {Te}_6$$\\end{document}). Due to the exchange proximity effect from one side and spin-orbit proximity effect from the other side of graphene, such a structure is referred to as graphene based ’ex-so-tic’ structure. First, we derive an effective Hamiltonian describing the low-energy states of the structure. Then, using the Green’s function formalism, we obtain analytical results for the Hall conductivities as a function of the Fermi energy and gate voltage. For specific values of these parameters, we find a quantized valley Hall conductivity.

Realizing Long Magnon Diffusion in Organic-Inorganic Hybrid Perovskite Film by the Universal Isotope Effect.

Organic-inorganic halide perovskite (OIHP) spintronics has become a promising research field, as it provides a new precisely manipulable degree of freedom. Recently, by utilizing the spin Seebeck effect and inverse spin-Hall effect measurements, we have discovered substantial magnon injection and transport in Pt/OIHP/Y3Fe5O12 nonlocalized structure. In theory, hyperfine interaction (HFI) is considered to have an important role in the magnon transport of OIHP, but there is no clear experimental evidence reported so far. We report increased spin Seebeck coefficient and lengthened magnon diffusion length in deuterated- (D-) OIHP films that have weaker HFI strength compared with protonated- (H-) OIHP. Consequently, D-MAPbBr3 film, as a non-ferromagnetic spacer, achieves long magnon diffusion length at room temperature (close to 120.3 nm). Our finding provides valuable insights into understanding magnon transport in OIHP films and paves the way for the use of OIHPs in multifunctional applications.

Unconventional exchange bias and enhanced spin pumping efficiency due to diluted magnetic oxide at the Co/ZnO interface

Exchange bias (EB) is normally created by the interfacial exchange coupling at a ferromagnetic/antiferromagnetic (FM/AFM) interface. FM/AFM interfaces have also been proved to perform enhanced spin angular momentum transfer efficiency in spin pumping (SP), compared with typical FM/nonmagnetic interfaces. Here, we report an unexpected EB and enhanced SP between a ferromagnet and semiconductor. Considerable EB has been observed in Co films grown on ZnO single crystal due to the interface antiferromagnetism of the Zn1−xCoxO (x depends on the Co solubility limit in ZnO) layer. Moreover, SP measurements demonstrate a giant spin pumping efficiency at the Co/ZnO interface with a bump (spin mixing conductance Geff↑↓= 28 nm−2) around the blocking temperature TB ∼ 75 K. The enhanced SP is further confirmed by inverse spin Hall effect measurements and the spin Hall angle θISHE of Zn1−xCoxO is estimated to be 0.011. The bound magnetic polarons with s–d exchange interaction between donor electrons and magnetic cation ions in Zn1−xCoxO play a key role in the formation of antiferromagnetism with giant Geff↑↓. Our work provides a new insight into spin physics at FM/semiconducting interfaces.

Atomically thin obstructed atomic insulators with robust edge modes and quantized spin Hall effect

Atomically thin obstructed atomic insulators with robust edge modes and quantized spin Hall effect

Quantum spin Hall effect protected by spin U(1) quasisymmetry

Quantum spin Hall effect protected by spin U(1) quasisymmetry

Gravitational orbital Hall effect of vortex light in Lense–Thirring metric

Vortex light, characterized by an intrinsic orbital angular momentum aligned with its propagation direction, is described through vortex electromagnetic waves. Similar to the gravitational spin Hall effect (SHE), vortex light is expected to exhibit intrinsic orbital angular momentum dependent trajectories and deviations from the null geodesic plane when propagating through a gravitational field, a phenomenon termed the gravitational orbital Hall effect (OHE). In this work, we model the vortex light as vortex Laguerre–Gaussian electromagnetic wave packets and analyze its motion by solving covariant Maxwell equations within the Lense–Thirring metric. Our findings reveal that the trajectory of vortex light with an intrinsic orbital angular momentum deviates from the null geodesic in two ways. It deviates both perpendicular to, and within, the null geodesic plane. This behavior contrasts with the gravitational SHE, where spin-polarized light primarily deviates perpendicular to the null geodesic plane. Moreover, the relationship between the deviation and intrinsic orbital angular momentum differs significantly from that between the deviation and spin. These results suggest a unique interaction between intrinsic orbital angular momentum and gravity, distinct from the spin-gravity coupling, indicating that the gravitational OHE of light might not be precisely predicted by merely substituting spin with intrinsic orbital angular momentum in the gravitational SHE of light.

Ferroelectric Semimetals with α-Bi/SnSe van der Waals Heterostructures and Their Topological Currents.

We show that proximity effects can be utilized to engineer van der Waals heterostructures (vdWHs) displaying semimetallic spin-ferroelectricity locking, where ferroelectricity and semimetallic spin states are confined to different layers, but are correlated by means of proximity effects. Our findings are supported by first principles calculations involving α-Bi/SnSe bilayers. We show that such systems support ferroelectrically switchable nonlinear anomalous Hall effect originating from large Berry curvature dipoles as well as direct and inverse spin Hall effects with giant bulk spin-charge interconversion efficiencies. The giant efficiencies are consequences of the proximity-induced semimetallic nature of low energy electron states, which are shown to behave as two-dimensional pseudo-Weyl fermions by means of symmetry analysis and first principles calculations as well as direct angle-resolved photoemission spectroscopy measurements.

Highly switchable photonic spin hall effect in vanadium dioxide grating structure

The enhancement and manipulation of the photonic spin Hall effects are essential for the spin photonic applications. The emergence of the phase transition material, vanadium dioxide (VO2), presents a unique chance to explore its conductivity dependent optical properties. However, the explorations on the PSHEs in VO2 based microstructures are quite rare. Here, we report the enhanced and controllable reflected photonic spin Hall effects under the horizontal or vertical polarized wave by establishing the VO2 grating structure. It can be found that associated with the phase transition of VO2, its changed conductivity not only tunes the magnitude of the reflected spin shift but also changes its sign, which even results in a dramatic modulation of the reflected spin shift from the negative maximum value under the vertical polarized wave to the positive maximum value under the horizontal polarized wave at the specific wavelength. Such features can be attributed to the dramatic changes of the reflectances in the VO2 grating structure under different polarizations induced by the changed conductivity of VO2. Our results allow the actively alternative phase transition material based configurations capable of dramatic manipulation of the reflected spin shifts and it constitutes a significant step toward highly switchable spin photonic devices.

Vectorial spatial differentiation of optical beams with metal–dielectric multilayers enabled by spin Hall effect of light and resonant reflection zero

We theoretically describe and numerically investigate the operation of “vectorial” optical differentiation of a three-dimensional light beam, which consists in simultaneous computation of two partial derivatives of the incident beam profile with respect to two spatial coordinates in different transverse electric field components. It is implemented upon reflection of the beam from a layered structure by simultaneously utilizing the effect of optical resonance and the spin Hall effect of light. As an example of a layered structure performing this operation, we propose a three-layer metal–dielectric–metal (MDM) structure. We show that by choosing the parameters of the MDM structure, it is possible to achieve the so-called isotropic vectorial differentiation, for which the intensity of the reflected optical beam (squared electric field magnitude) is proportional to the squared absolute value of the gradient of the incident linearly polarized beam. The presented numerical simulation results demonstrate high-quality vectorial differentiation and confirm the developed theoretical description.

Singular photon spin Hall effect in chiral-graphene heterostructures and its application in chirality detection.

In this paper, we consider the singular photonic spin Hall effect (PSHE) in a chiral-graphene-chiral (CGC) heterostructure in the THz band. We investigate the impact of a chiral medium on reflectance spectra and the modulation of the Fermi energy on the surface conductivity of graphene. Our study shows that placing a chiral medium on both sides of a monolayer of graphene results in an enhanced transverse shift (TS) compared to placing a non-chiral medium. Moreover, the direction of the TS of the PSHE can be altered by adjusting the sign of the chirality parameter and the Fermi energy of graphene. Finally, we establish a quantitative relationship between the PSHE and the chirality parameter and the Fermi energy of graphene. By dynamically modulating the PSHE in graphene, it is possible to flexibly detect chirality parameters. This work opens up new avenues for chiral molecular detection and graphene-PSHE dynamic modulation.