Spectral Hole Burning In Eu3 Research Articles

Shifts of optical frequency references based on spectral-hole burning in Eu3+:Y2SiO5

Several properties of Eu3+:Y2SiO5 spectral holes are measured, to assess the suitability of broad-band hole-patterns for use as laser-frequency references. We measure frequency shifts due to magnetic fields, side-features of neighboring spectral holes and changing optical probe power. A precise calibration of a temperature insensitive point is also performed, where the temperature-induced frequency shift is canceled to first order by the pressure-induced shift from the crystal's helium-gas environment.

Highly stable persistent spectral hole burning in Eu3+ ions doped oxy-fluoride glasses of 30CaF2–10Al2O3–60B2O3

High temperature persistent spectral hole burning up to room temperature has been observed in Eu3+ ions doped oxy-fluoride glasses with a composition of 30CaF2–10Al2O3–60B2O3 (mol%) melted in a reducing atmosphere. The hole stability was studied through light-induced hole refilling and temperature cycling experiments. The burned holes survive thermal cycling to 300K due to a high barrier height of 0.69eV in the sample.

Persistent Spectral Hole Burning in Eu3+-doped Calcium Oxide- and Calcium Fluoride-based Aluminoborate Glasses

Abstract Eu3+-doped oxyfluoride glasses with composition of 30CaF2–10Al2O3–60B2O3 (mol %) and oxide glasses of 30CaO–10Al2O3–60B2O3 (mol %) were prepared in a reducing atmosphere. The persistent spectral hole burning (PSHB) was characterized over a temperature range from 10 to 300 K, and the hole-burning efficiency between Eu3+-doped glass matrix of 30CaF2–10Al2O3–60B2O3 and 30CaO–10Al2O3–60B2O3 was compared.

Persistent spectral hole burning in chalcohalide glasses doped with Eu3+

Efficient persistent spectral hole burning in Eu3+-doped sulfide glasses was observed with the addition of CsBr or KBr. Holes in these glasses showed high initial growth rates, thermal barrier heights, and low relaxation rates. It was also possible to form independent multiholes on the inhomogeneously broadened absorption spectrum. One-photon absorption of the burning light and corresponding reduction of Eu3+ into Eu2+ via interaction with local conduction (or charge transfer) bands are the main processes for hole burning.

High-temperature persistent spectral hole burning of Eu3+-doped SiO2 glass prepared by the sol-gel process

Persistent spectral hole burning was observed at temperatures higher than 77 K in SiO2 glass doped with the Eu3+ ions. The Eu3+-doped SiO2 glass was prepared using the sol-gel process of Si(OC2H5)4 and EuCl3⋅6H2O. A persistent spectral hole was burned in the excitation spectrum of the F07→5D0 transition of Eu3+ using a Rhodamine 6G dye laser, of which the hole width and depth were 1.6 cm−1 and ∼20% of the total intensity, respectively, at 77 K. Hole depth decreased with increasing temperature and disappeared above ∼130 K. A possible mechanism for the hole burning is related to the local structure around Eu3+ and the residual OH and H2O in the glass.

Spectral hole burning in Eu3+-doped highly porous gamma -aluminum oxide.

Transient and persistent spectral holes were burned in the $^{7}F_{0}\ensuremath{-}^{5}D_{0}$ transition of ${\mathrm{Eu}}^{3+}$ ions in macromonolithic transparent porous nanocrystalline $\ensuremath{\gamma}$-${\mathrm{Al}}_{2}$${\mathrm{O}}_{3}$ produced by sol-gel technology. An unusual temperature dependence of the transient hole width was observed that differs markedly from that in either crystalline or disordered systems. This temperature dependence is explained in terms of Raman processes involving sizeresonant vibrations of the nanoparticles comprising the structure. Possible mechanisms of hole burning are suggested.

Observation of persistent spectral hole burning of Eu3+ in beta "-alumina at 110 K.

Persistent spectral hole burning (PSHB) has been observed at 110 K in ${\mathrm{Eu}}^{3+}$ exchanged ${\mathrm{Na}}^{+}$ \ensuremath{\beta}\ensuremath{''}-alumina crystals. This is the highest burning temperature for PSHB in ${\mathrm{Eu}}^{3+}$ doped materials. It is found that the long lived holes at high temperature are caused by light-induced local motion of ions surrounding the ${\mathrm{Eu}}^{3+}$ ions. The results both of hole relaxation and temperature cycling measurements can be well interpreted by a hopping model with a Gaussian distributed barrier height. \textcopyright{} 1996 The American Physical Society.