Spatial Hole Burning Research Articles

An 8-Channel Narrow Linewidth Multi-Wavelength Laser Hybrid Integrated by Photonic Wire Bonding Structures for DWDM Systems

An 8-channel monolithically integrated narrow linewidth multi-wavelength laser array (NL-MLA) combined with the commercial 8×1 planar lightwave circuit (PLC) coupler by the photonic wire bonding (PWB) technique is demonstrated in this paper. A distributed feedback (DFB) laser with the high-reflection and anti-reflection coatings (HR-AR) and the tapered asymmetric corrugation-pitch-modulated (TACPM) grating structure is proposed. The TACPM grating is achieved by the reconstruction equivalent chirp (REC) technique, which is low-cost and of high wavelength accuracy. According to the numerical simulation results, under the unavoidable impact of the facet phase of the HR end, the TACPM DFB laser suppresses the longitudinal spatial hole burning (LSHB) effect significantly, while having better single-mode performance and control of wavelength compared with the conventional HR-AR DFB laser. An 8-channel HR-AR TACPM DFB NL-MLA is fabricated with the 0.8 nm wavelength spacing design. The hybrid integration between the 8-channel NL-MLA and the PLC chip is achieved using the PWB technique. Both good single-mode performance and accurate wavelength interval of 0.8 nm can be obtained when all channels work simultaneously. The laser linewidth is below 273.8 kHz with good uniformity, and the relative intensity noise is under -159.6 dB/Hz for each channel.

A Multi-Format, Multi-Wavelength Erbium-Doped Fiber Ring Laser Using a Tunable Delay Line Interferometer

This work demonstrates the use of an erbium-doped fiber amplifier (EDFA), a tunable bandpass filter (TBF), and a tunable delay line interferometer (TDLI) to form a ring laser that produces multi-format, multi-wavelength laser beams. The TDLI serves as the core of the proposed laser generation system. TDLI harnesses the weak Fabry–Pérot (FP) interferences generated by its built-in 50/50 beamsplitter (BS) with unalterable filtering characteristics and the interferences with free spectral range (FSR) adjustable from each of its two outputs with nearly complementary phases to superpose and generate a variable interference standing wave. The interferometric standing wave and weak FP interferences are used to form a spatial-hole burning to promote the excitation of multi-format and multi-wavelength lasers. The proposed system enables dual-wavelength spacing ranging from 0.3 nm to 3.35 nm, with a switchable wavelength position at approximately 1527 nm to 1535 nm, providing flexible tunability.

Impact of Grating Duty-Cycle Randomness on DFB Laser Performance

The duty-cycle randomness (DCR) of the Bragg grating of the distributed feedback (DFB) lasers introduced by the fabrication process is inevitable, even with state-of-the-art technologies such as electron beam lithography and dry or wet etching.This work investigates the impact of grating DCR on DFB laser performance through numerical simulations. The result reveals that such randomness causes a reduction in the side mode suppression ratio (SMSR), and deteriorates the noise characteristics, i.e., broadens the linewidth and increases the relative intensity noise (RIN). With the grating DCR, the effective grating coupling coefficient decreases as evidenced by the reduced Bragg stopband width. However, the longitudinal spatial hole burning (LSHB) effect in the DFB lasers can somewhat be diminished by the grating DCR. The seriousness of these effects depends on different grating structures and their coupling strengths. Our simulation shows that a degradation of 17 dB can be brought to the SMSR of the uniform grating DFB lasers with their duty cycles taking a deviation of ±25% in a uniformly distributed random fashion. It also broadens the linewidth of the quarter-wavelength phase-shifted DFB lasers by more than 2.5 folds. The impact of this effect on the RIN is moderate—less than 2%. All the performance deteriorations can partially be attributed to the effective reduction in the grating coupling coefficient of around 20% by such a DCR.

High-power and narrow-linewidth nanosecond pulsed intracavity crystalline Raman laser operating at 1.7 µm

We report on a high-power and narrow-linewidth nanosecond pulsed intracavity crystalline Raman laser at 1.7 µm. Driven by an acousto-optically Q-switched 1314 nm two-crystal Nd:YLF laser, the highly efficient cascaded YVO4 Raman laser at 1715nm was obtained within the well-designed L-shaped resonator. Thanks to the absence of spatial hole burning in the stimulated Raman scattering process, significant spectral purification of second-Stokes radiation was observed by incorporating a fused silica etalon in the high-Q fundamental cavity. Under the repetition rate of 4 kHz, the highest average output power for single longitudinal mode operation was up to 2.2 W with the aid of precision vibration isolation and precision temperature controlling, corresponding to the pulse duration of ∼2.8 ns and the spectral linewidth of ∼330 MHz. Further increasing the launched pump power, the second-Stokes laser tended toward be always multimode, and the maximum average output power amounted to 4.8 W with the peak power of ∼0.8 MW and the spectral linewidth of ∼0.08 nm. The second-Stokes emission was near diffraction limited with M2 < 1.4 across the whole pump power range.

Theoretical model of passive mode-locking in terahertz quantum cascade lasers with distributed saturable absorbers

Abstract In research and engineering, short laser pulses are fundamental for metrology and communication. The generation of pulses by passive mode-locking is especially desirable due to the compact setup dimensions, without the need for active modulation requiring dedicated external circuitry. However, well-established models do not cover regular self-pulsing in gain media that recover faster than the cavity round trip time. For quantum cascade lasers (QCLs), this marked a significant limitation in their operation, as they exhibit picosecond gain dynamics associated with intersubband transitions. We present a model that gives detailed insights into the pulse dynamics of the first passively mode-locked QCL that was recently demonstrated. The presence of an incoherent saturable absorber, exemplarily realized by multilayer graphene distributed along the cavity, drives the laser into a pulsed state by exhibiting a similarly fast recovery time as the gain medium. This previously unstudied state of laser operation reveals a remarkable response of the gain medium on unevenly distributed intracavity intensity. We show that in presence of strong spatial hole burning in the laser gain medium, the pulse stabilizes itself by suppressing counter-propagating light and getting shortened again at the cavity facets. Finally, we study the robustness of passive mode-locking with respect to the saturable absorber properties and identify strategies for generating even shorter pulses. The obtained results may also have implications for other nanostructured mode-locked laser sources, for example, based on quantum dots.

Anti-correlation phenomena in quantum cascade laser frequency combs

In quantum cascade laser frequency combs, the intensity distribution of the optical spectrum can be split into two well-separated lobes of longitudinal modes that, even when far apart, have a common phase relation and preserve equal frequency separation. The temporal dynamics of two lasers emitting at 4.4 and 8.1 µm operating in this bilobed regime are here investigated. The laser intensity shows a peculiar temporal behavior associated with the spectral features whereby, every half a round-trip, the total emitted power switches from one lobe to the other, with a perfect temporal anti-correlation. The anti-correlation between the lobes is also observed in the intensity noise figure of the emission. This coherent phenomenon arises from gain nonlinearities induced by spatial hole burning and the extremely fast gain dynamics typical of quantum cascade lasers.

Exploring the spatial hole burning effect on the mode-locking characteristics of self-mode-locked Nd:YVO4 lasers

The spatial hole burning (SHB) effect on the mode-locking characteristics of Nd:YVO4 self-mode-locked (SML) lasers are investigated. By varying the cavity length, pump power, and crystal temperature, we manipulate the SHB effect on the longitudinal mode distributions and the temporal waveforms of the SML lasers. The experimental results indicate that, at a pump power of 3395 mW and a cavity length of 23 mm, the SHB effect is minimal, the temporal waveform remains stable and the longitudinal mode spacing equals the fundamental longitudinal mode interval (FLMI). As increasing the cavity length to 75 mm, the experimental longitudinal mode spacing becomes 1 to 5 times the FLMI and the temporal waveforms are then multi-pulse mode-locked state, indicating an aggravation in the SHB effect of the SML laser. With the cavity length of 23 mm, as the pump power increases from 3.4 W to 9.7 W, the SHB effect on the mode-locking characteristics gradually also aggravates. The laser gradually changes from the fundamental mode-locked state to the spaced mode-locked state. By adjusting the crystal temperature from 25 °C to 35 °C, the aggravated SHB effect caused by the increase in pump power is counteracted.

Broadband quantum-dot frequency-modulated comb laser

Frequency-modulated (FM) laser combs, which offer a quasi-continuous-wave output and a flat-topped optical spectrum, are emerging as a promising solution for wavelength-division multiplexing applications, precision metrology, and ultrafast optical ranging. The generation of FM combs relies on spatial hole burning, group velocity dispersion, Kerr nonlinearity, and four-wave mixing (FWM). While FM combs have been widely observed in quantum cascade Fabry-Perot (FP) lasers, the requirement for a low-dispersion FP cavity can be a challenge in platforms where the waveguide dispersion is mainly determined by the material. Here we report a 60 GHz quantum-dot (QD) mode-locked laser in which both the amplitude-modulated (AM) and the FM comb can be generated independently. The high FWM efficiency of –5 dB allows the QD laser to generate FM comb efficiently. We also demonstrate that the Kerr nonlinearity can be practically engineered to improve the FM comb bandwidth without the need for GVD engineering. The maximum 3-dB bandwidth that our QD platform can deliver is as large as 2.2 THz. This study gives novel insights into the improvement of FM combs and paves the way for small-footprint, electrically pumped, and energy-efficient frequency combs for silicon photonic integrated circuits (PICs).

Experimental and theoretical studies into longitudinal spatial hole burning as a power limit in high-power diode lasers at 975 nm

Spatial-hole-burning as a limit to the continuous-wave (CW) output power of GaAs-based diode lasers is experimentally studied. For 90 μm stripe lasers with 6 mm resonator length and 0.8% front facet reflectivity, spontaneous emission (SE) intensity data show that the carrier density in the device center rises rapidly at the rear facet with bias and falls at the front, consistent with simulation. At the front, the carrier density at the edge of the laser stripe also rises rapidly with bias (lateral carrier accumulation, LCA), consistent with previous observations of increased local current flow. Devices with 20% front facet reflectivity for a flat longitudinal optical field profile show smaller variation in the local carrier density. Weak variation is seen in the carrier density outside the stripe; hence, current spreading is not a power limit. SE wavelength data show higher temperatures at the front with a twofold higher increase in temperature for 0.8% than for 20% front facet. The increased front temperature likely triggers lateral spatial-hole-burning and LCA in this region, limiting power. Finally, pulsed threshold current is more strongly temperature dependent for devices with 0.8% than 20% front facets, attributed to the higher rear facet carrier density. The temperature dependence of slope in pulsed is comparable for both devices at low bias but is more rapid for 0.8% at 20 A, likely due to non-clamping at the back. The temperature dependence of slope for CW is strong with 0.8% facets, likely due to the high temperature and LCA at the front but reduced for 20% facets.

Spectral behavior of high-power distributed feedback lasers

The mode hopping behavior of high-power distributed feedback lasers emitting near 780,hbox {nm} is studied. The lasers have highly reflective rear and anti-reflection coated front facets. The influence of the phase of the grating at the rear facet is investigated by means of numerical simulations in the time domain taking into account spatial hole burning and self-heating effects. The simulation results are in agreement with experimental findings.

Spectral narrowing and broadening of Cr:ZnS/Se laser oscillation due to mode competition and spatial hole burning in the gain element.

In this paper, we demonstrate the laser characterization of Cr:ZnS/Se polycrystalline gain media in non-selective unpolarized, linearly polarized, and twisted mode cavities. Lasers were based on post-growth diffusion-doped, commercially available antireflective-coated Cr:ZnSe and Cr:ZnS polycrystals with a length of 9 mm. The spectral output of lasers based on these gain elements in non-selective unpolarized and linearly polarized cavities was measured to be broadened to ∼20-50 nm due to the spatial hole burning (SHB) effect. SHB alleviation in the same crystals was realized in the "twisted mode" cavity, with linewidth narrowing to ∼80-90 pm. Both broadened and narrow-line oscillations were captured by adjusting the orientation of intracavity waveplates with respect to facilitated polarization.

A chiral microchip laser using anisotropic grating mirrors for single mode emission

Abstract A pair of nanostructured mirrors made of a diffraction grating inscribed in the top layer of a Bragg mirror are designed such that a phase shift near π and different reflected amplitudes exist between transverse electric (TE) and magnetic (TM) reflected polarization states at normal incidence. When a standing wave laser resonator is formed with two such mirrors and the two mirrors’ principal axes are twisted one with respect to the other, this phase shift condition suppresses multiple longitudinal mode emission arising from axial spatial hole burning. In addition, the different amplitudes of TE and TM reflected polarizations create polarization eigenstates with different round-trip losses, suppressing one polarization eigenstate. Laser experiments made with a Yb3+-doped Y3Al5O12 active material reveal enhanced purity of the emission spectrum compared to similar lasers using conventional laser mirrors. The proposed design enables a miniature single mode laser, replacing more complex designs usually needed to achieve that goal.

Spatial Hole Burning in Distributed-Feedback Fiber Laser and its Reduction by Grating Apodization

Spatial Hole Burning in Distributed-Feedback Fiber Laser and its Reduction by Grating Apodization

Self-mixing interference in a thin-slice solid-state laser with few feedback photons per observation period

Formation of a peculiar lasing pattern leading to a TEM00-like mode accompanied by a nonzero bright outer-ring emission (namely, a modified TEM00 mode) was observed in a 300-\mu m-thick LiNdP4O12 (LNP) laser with reflective flat end mirrors that was pumped with a laser diode whose focused spot size was larger than the lasing beam spot size determined by the thermal lens effect. The photon lifetimes of the laser oscillations were found to be greatly shortened to \tau_{p} = 6.74 ps as compared with those in pure TEM00 mode operation, while the fluorescence lifetime was \tau = 130 \mu s. The formation of the peculiar transverse mode was theoretically treated in terms of the pump-intensity-dependent thermal lens effect, which yields the lasing beam spot sizes in the resultant optical cavity. In addition, transverse spatial hole burning of population inversions due to the preceding transverse eigenmode intensity and the associated anti-guidance of the pure TEM00 field leading to formation of the TEM00 with an emergent outer ring emission was shown to appear with increasing pump power through the electric lens (i.e., population lens) effect, in which almost all of the population inversion contributes to lasing with a pronounced effective modal gain. Self-mixing laser Doppler velocimetry (LDV) experiments and numerical simulations revealed that spontaneous emission factors in the peculiar mode oscillations were greatly decreased in comparison with those in pure TEM00 mode operation. The present thin-slice solid-state laser possessing a large fluorescence-to-photon lifetime and decreased spontaneous emission factor enabled us to detect LDV signals in the regime of few feedback photons per observation period.

Upraising wavelength exactitude in laser array with spatial hole burning suppression based on the reconstruction-equivalent-chirp technique.

An equivalent corrugation pitch modulated distributed-feedback semiconductor multiwavelength laser array (MLA) with two equivalently assisted phase shifts (EAPSs) based on the reconstruction-equivalent-chirp technique is theoretically studied and experimentally demonstrated. The simulated results show that the longitudinal photon density distribution of the studied MLA is much more uniform than that of the MLA without EAPSs. Accordingly, the longitudinal spatial hole burning of the proposed MLA is therefore suppressed more effectively. The experimental results show that the studied MLA has good single-longitudinal-mode performance. The highest side mode suppression ratio (SMSR) is even up to 52.63dB. Meanwhile, the tunable wavelength range of the investigated MLA is 25.94nm under the thermal tuning scheme from 15.12°C to 46.93°C. All channels are within a wavelength deviation of ±0.001n m. The SMSRs are all above 38dB.

Graphene saturable absorber mirror for passive mode-locking of mid-infrared QCLs

Passive mode-locking in quantum cascade lasers (QCLs) remains one of the huge challenges because of the fast relaxation time of the excited carriers which is typically in the range of sub-picoseconds. The use of conventional techniques such as the semiconductor saturable absorber mirror is inefficient because the spatial hole burning effect dominates the carrier dynamics. To overcome this effect, longitudinal transition structures with relaxation time around $$50~\mathrm {ps}$$ were proposed. However, mode-locking is assured with an external modulation at a cavity roundtrip frequency. In this paper, we demonstrate that a single-layer graphene used as a saturable absorber permits to generate stable pulses in such structures. The graphene is integrated with a highly reflective mirror to increase the internal electric field and achieve the saturation intensity. The dynamic of the QCL is modeled with Maxwell-Bloch equations while Maxwell-Ampere equation is used for the graphene layer by considering a nonlinear conductivity. This system of equations is solved using the one-dimensional Finite-Difference Time-Domain ( FDTD) method. To model the single-layer graphene of a $$0.33~\mathrm {nm}$$ thickness, a specific sub-cell is implemented based on Maloney method. Simulation results of a $${\mkern 1mu} 6.2~\mu {\text{m}}$$ QCL with a diagonal radiative transition show a generation of isolated pulses with a peak electric field of $$80~\mathrm {MV.m^{-1}}$$ and a duration of $$51~\mathrm {fs}$$ . The mode-locking remains stable for QCLs with a vertical transition having a relaxation time below $$5~\mathrm {ps}$$ .

Active Modelocking Improvement of MIR-QCL by Integrating Graphene as a Saturable Absorber

The active mode-locking technique of quantum cascade lasers is highly affected by the bias current level and the magnitude of the modulated signal because of the spatial hole burning effect. The laser generates a stable pulse train near the threshold current and for a high modulation magnitude. We show in this paper an improvement of these conditions with an integration of a single-layer graphene which works as a saturable absorber. The light-matter interaction in the laser active region is described by the two-level Maxwell-Bloch equations and in graphene layer by the Maxwell-Ampere equation and Maxwell-Bloch equations. These system equations are solved using the Finite-Difference Time-Domain (FDTD) method which has the main advantage of not involving any approximation. The weakly coupled splitting scheme is adopted for the time discretization of Maxwell and Bloch equations. The graphene saturable absorption is modelled by a saturable conductivity in Maxwell-Ampere equation and with the dipole moment and carrier density in Maxwell-Bloch equations. For a QCL structure with a gain recovery time of 50 ps, simulation results show better stability of the mode-locking over a broad range of injection current and for smaller magnitude of the modulated signal. QCL structure with gain recovery time close to 1 ps reveals the generation of two pulses per roundtrip linked to spatial hole burning. The carrier grating strength can be reduced by changing the boundary conditions of the cavity such as with a high reflectivity mirror in front of graphene layer.

Extreme Double/Triple Asymmetric Epitaxial Structure Based Diode Lasers for High Powers and High Efficiencies

In edge-emitting high power laser diodes, the longitudinal spatial hole burning (LSHB) effect induced by the inhomogeneous photon and carrier distributions and the non-linear process, two-photon absorption (TPA), are demonstrated to the key causes of power saturation at the high injection level even in the absence of thermal roll-over. Laser diodes based on extreme, double/triple asymmetric (EDAS/ETAS) epitaxial structures show great potentials in high-power and high-efficiency applications owing to the reduced series resistance, low optical loss, and suppressed power saturation. In this paper, a novel semi-analytical calculation method is proposed to systematically analyze the impact of LSHB and TPA effects on the output characteristics of EDAS/ETAS-based broad area lasers (BALs). By leveraging the feature that it is flexible to adjust the confinement factor of ETAS epitaxial structure without compromising the internal loss and resistance level, the laser parameters are first optimized to minimize power saturation of ETAS-based BALs under pulsed and Continuous Wave (CW) operation.

Nanosecond pulsed single longitudinal mode diamond Raman laser in the 1.6 µm spectral region.

We demonstrate the first nanosecond pulsed single longitudinal mode (SLM) intracavity-pumped diamond Raman laser, to the best of our knowledge. The eye-safe coherent source at 1634 nm, which was converted from the actively Q-switched 1342 nm Nd:YVO4 laser, yielded 4.35 W of multimode average output power with a pulse duration of 6 ns and peak power of 29 kW. By exploiting the spatial hole burning free gain mechanism in the Raman media, stable SLM operation was observed at low output power (0.46 W) for the free-running case. Furthermore, by incorporating an etalon in the fundamental standing-wave cavity, the spectral linewidth of the fundamental field was suppressed substantially below the diamond Raman gain linewidth and slightly less than the free spectral range of the mm-scale Raman resonator. Thereby, a much higher SLM output power of 1.63 W was obtained with a pulse duration of ∼9 ns and a spectral linewidth of ∼77 MHz.

Analysis of light – current characteristics of high-power semiconductor lasers (1060 nm) in a steady-state 2D model

This paper presents a 2D model of a high-power semiconductor laser, which takes into account carrier transport across the layers of its heterostructure and longitudinal spatial hole burning (LSHB), an effect related to the nonuniform gain distribution along the cavity axis. We show that the use of the 2D model which takes into account carrier transport across the layers of the heterostructure allows an appreciable contribution of LSHB to saturation of light – current characteristics to be demonstrated. The LSHB effect, causing a decrease in the output optical power of semiconductor lasers, is shown to be stronger at high drive currents and low output mirror reflectivities. In the case of high drive currents, the LSHB-induced drop in power is related to the faster growth of internal optical and recombination losses because of the nonuniform current density distribution along the cavity axis, such that the highest current density can be almost twice the lowest one. LSHB is shown to increase the power stored in a Fabry – Perot cavity, which is an additional mechanism reducing the output optical power.