Space Charge Limited Current Research Articles

Novel class of ambipolar columnar liquid crystals based on cyclic dipeptide and isatin hybrids.

A new class of cyclic dipeptide-isatin hybrids was synthesized using 2,5-diketopiperazine and various isatin derivatives bearing flexible chains and extended aromatic rings in a double Knoevenagel condensation process. These new series demonstrate high solubility and good thermal stability with decomposition temperatures exceeding 370 °C, especially the molecular design with efficient space-filling (CI5 and CI6) stabilized columnar liquid crystalline phase. The hole and electron carrier mobility of the CI5 compound, measured using the space charge limited current (SCLC) technique, were found to be 9.46 × 10-4 cm2/V.s and 7.88 ×10-4 cm2/V.s respectively. The stabilization of columnar self-assembly and observation of ambipolar charge carrier mobility in cyclic dipeptide-isatin hybrids make them a promising class of self-assembling organic semiconductors.

Understanding the dielectric properties of silicone rubber‐BN nanocomposites under DC voltage

AbstractThe present study explores the dielectric and structural properties of silicone rubber composites with low‐weight percentages of boron nitride (BN) fillers aimed at insulation applications. The incorporation of BN fillers into the silicone rubber matrix significantly enhances the glass transition temperature (Tg), melting temperature (Tm), and crystallization temperature (Tc). Notably, the dielectric constant increases while the loss factor remains minimal with a low concentration of BN fillers with silicone rubber matrix. J–V characteristics from space charge limited current (SCLC) measurements were employed to evaluate trap density. The addition of 3 wt% BN filler notably improves the crossover voltage and trap density in the silicone rubber matrix. A strong correlation has been observed between trap density values derived from SCLC measurements and surface potential decay experiments. Furthermore, the SCLC measurements at different temperatures exhibit an Arrhenius behavior, providing insights into the charge transport and trapping mechanisms. Overall, the experiment results indicate that the inclusion of 3 wt % of BN filler has significant improvement in dielectric as well as charge trap characteristics.Highlights BN filler impacts permittivity and tan (δ) based on concentration levels. Differential scanning calorimetry shows crystallinity changes with increased BN filler in silicone rubber. Surface potential relates to J–V characteristics, following SCLC mechanism. Arrhenius relation to temperature‐based SCLC shows thermally activated conduction. Trap density trends align in SCLC and surface potential decay methods.

Enhancing Hole Transport and Autonomous Healing Properties of Supramolecular Columns in Unsymmetrical Discotics.

Designing smart autonomous healing soft materials is crucial to attaining cost-efficiency and optimal performance in organic semiconductors. In this context, we design an unsymmetrical thiophene-fused phenazine (TFP)-based discotic liquid crystal (DLC) with the goal of creating an active organic semiconductor that encompasses favorable attributes, such as polarizability, mobility, and processability. Aligned with our objective, we successfully synthesized two unsymmetrical TFP core-based DLCs by linking alkyl chains of variable lengths at the periphery through a coupling reaction. These DLCs show room temperature columnar oblique (Colob) mesophase as evident from temperature-dependent studies employing polarized optical microscopy (POM) and small-angle X-ray scattering (SAXS). We performed space charge-limited current (SCLC) techniques to evaluate the hole mobility of TFP-based DLCs and found that they have high hole mobility (∼10-3 cm2/V s). Additionally, the film morphology and its self-healing nature have been examined using atomic force microscopy (AFM) and stress relaxation test. One of the unsymmetrical DLCs exhibited an ability to relax stress over time while maintaining a constant strain (up to 1-3%). The rational design of these unsymmetrical discotics, exhibiting reduced threshold voltage (as confirmed by conductivity studies) highlights their possible potential in various organic semiconductor devices.

Fluorination or Not in Small Molecule Solar Cells: Achieving a Higher Efficiency with Halogen-Free End Group.

Fluorination is an efficient strategy for improving organic solar cells (OSCs) efficiency, particularly by fluorinating the end group of emerging nonfullerene acceptors. Here, the fluorination effect was investigated by using small molecule donors with fluorine-free (SBz) and fluorinated (SBz-F) end groups, paired with the emerging nonfullerene acceptor Y6. Interestingly and unexpectedly, fluorination of the end group negatively affects OSCs efficiency, with fluorine-free SBz:Y6 OSCs achieving a higher power conversion efficiency (PCE) of 11.05 % compared to the fluorine-containing SBz-F:Y6 blends (PCE=9.61 %). Analysis of space-charge limited currents reveals lower and unbalanced hole/electron mobility in SBz-F:Y6 compared to the SBz:Y6 blends. These findings are further supported by charge recombination dynamics and donor-acceptor miscibility analyses.

Charge transport properties and variable photo-switching of three-terminal Cs2AgBiBr6 device

In this study, we present an in-depth exploration of charge transport phenomena and variable photo-switching characteristics in a novel double-perovskite-based three-terminal device. The Cs2AgBiBr6 thin film (TF) was synthesized through a three-step thermal evaporation process followed by precise open-air annealing, ensuring superior film quality as confirmed by structural and morphological characterizations. Photoluminescence spectroscopy revealed distinct emissions at 2.28 and 2.07 eV, indicative of both direct and indirect electronic transitions. Our device exhibited space-charge limited current (SCLC) behaviour beyond 0.35 V, aligning with the relationship , where the exponent m transitioned from ≤1 to >1. Detailed analysis of Schottky parameters within the trap-filled limit (TFL) regime was conducted, accounting for variations in temperature and optical power. Significantly, the self-powered photodetector demonstrated outstanding performance under illumination. The sensitivity of the device was finely tunable via the applied bias voltages at the third terminal. Notably, an optimal bias voltage of ±100 μV yielded maximum responsivity (R) of 0.48 A/W and an impressive detectivity (D*) of 1.07 × 109 Jones, highlighting the potential of this double-perovskite-based device for advanced optoelectronic applications.

Controlling the digital-to-analog switching in HfO2-based memristors via modulating the oxide thickness

The HfO2-based memristors have been acknowledged as a highly potential candidate for nonvolatile memory and neuromorphic computing applications. However, the analog resistive switching behavior of the HfO2-based memristors still needs improvement. In this work, Cu/HfO2/Pd devices with different oxide layer thicknesses were prepared by the magnetron sputtering process. The resistance switching characteristics related to oxide layer thickness were explored, revealing significant differences in the forming, SET, and RESET characteristics depending on oxide thickness. The conduction mechanism of the Cu/HfO2/Pd memristors is mainly attributed to the space charge limited current (SCLC) model. Thinner devices tend to show a more abrupt SET behavior and larger SET voltage, while thicker devices exhibit more gradual SET behavior and a lower SET voltage. In addition, as the thickness of the oxide layer increases, the Cu/HfO2/Pd memristors transition from digital resistive switching to analog resistive switching. The formation and rupture of oxygen vacancy filaments are predominant in thicker device, and the shape of the conduction filaments has been proposed as responsible for the abrupt and gradual changes in resistive switching. This work demonstrates that the thickness of the oxide layer plays an important role in engineering digital logic and neuromorphic behavior in HfO2-based memristors.

Innovative In Situ Passivation Strategy for High-Efficiency Sb2(S,Se)3 Solar Cells.

An effective defect passivation strategy is crucial for enhancing the performance of antimony selenosulfide (Sb2(S,Se)3) solar cells, as it significantly influences charge transport and extraction efficiency. Herein, a convenient and novel in situ passivation (ISP) technique is successfully introduced to enhance the performance of Sb2(S,Se)3 solar cells, achieving a champion efficiency of 10.81%, which is among the highest recorded for Sb2(S,Se)3 solar cells to date. The first principles calculations and the experimental data reveal that incorporating sodium selenosulfate in the ISP strategy effectively functions as an in situ selenization, effectively passivating deep-level cation antisite SbSe defect within the Sb2(S,Se)3 films and significantly suppressing non-radiative recombination in the devices. Space-charge-limited current (SCLC), photoluminescence (PL), and transient absorption spectroscopy (TAS) measurements verify the high quality of the passivated films, showing fewer traps and defects. Moreover, the ISP strategy improved the overall quality of the Sb2(S,Se)3 films, and fine-tuned the energy levels, thereby facilitating enhanced carrier transport. This study thus provides a straightforward and effective method for passivating deep-level defects in Sb2(S,Se)3 solar cells.

Space-Charge-Limited Current Measurements: A Problematic Technique for Metal Halide Perovskites.

Space-charge-limited current (SCLC) measurements play a crucial role in the electrical characterization of semiconductors, particularly for metal halide perovskites. Accurate reporting and analysis of SCLC are essential for gaining meaningful insights into charge transport and defect density in these systems. Unfortunately, performing SCLC measurements on perovskites is complicated by their mixed electronic-ionic conductivity. This complexity led to SCLC data often being incorrectly analyzed using simplified models unsuitable for these materials and reported without essential information about how the measurements were performed. In light of recently published SCLC data, common challenges in using SCLC measurements on perovskite materials are addressed, and solutions are discussed in this paper. The applicability of the often-used analytical models, the overlooked issues related to the mixed ionic-electronic conductivity of perovskites, and the complexity of creating single-carrier devices are investigated using drift-diffusion simulations. Finally, guidelines for more accurate reporting and improved analysis are provided.

Novel Self-Assembling Supramolecular Phenanthro[9,10-a]phenazine Discotic Liquid Crystals: Synthesis, Characterization and Charge Transport Studies.

The incorporation of heteroatoms in the chemical structure of organic molecules has been identified as analogous to the doping process adopted in silicon semiconductors to influence the nature of charge carriers. This strategy has been an eye-opener for material chemists in synthesizing new materials for optoelectronic applications. Phenanthro[9,10-a]phenazine-based mesogens have been synthesized via a cyclo-condensation pathway involving triphenylene-based diketone and o-phenyl diamines. The incorporation of phenazine moiety as discussed in this paper, alters the symmetric nature of the triphenylene. The phenanthro[9,10-a]phenazine-based mesogens exhibit hole mobility in the order of 10-4 cm2/Vs as measured by the space-charge limited current (SCLC) technique. The current density in the SCLC device increases with increasing temperature which indicates that the charge transport is associated with the thermally activated hopping process. This report attempts to elucidate the self-organization of asymmetric phenanthro[9,10-a] phenazine in the supramolecular liquid crystalline state and their potential for the fabrication of high-temperature optoelectronic devices. However, the low charge carrier mobility can be one of the challenges for device performance.

SnO2-Based Interfacial Engineering towards Improved Perovskite Solar Cells.

Interfacial engineering is of great concern in photovoltaic devices. Metal halide perovskite solar cells (PSCs) have garnered much attention due to their impressive development in power conversion efficiencies (PCEs). Benefiting from high electron mobility and good energy-level alignment with perovskite, aqueous SnO2 as an electron transport layer has been widely used in n-i-p perovskite solar cells. However, the interfacial engineering of an aqueous SnO2 layer on PSCs is still an obscure and confusing process. Herein, we proposed the preparation of n-i-p perovskite solar cells with different concentrations of SnO2 as electron transport layers and achieved optimized PCE with an efficiency of 20.27%. I Interfacial engineering with regard to the SnO2 layer is investigated by observing the surface morphology, space charge-limited current (SCLC) with the use of an electron-only device, and time-resolved photoluminescence (TRPL) of perovskite films.

Frequency-dependent capacitance and conductance characteristics and current transport mechanisms of Schottky diodes with TPA-IFA organic interfacial layer

In this study, a Schottky barrier diode with an Al/TPA-IFA/p-Si structure was fabricated using spin coating and thermal evaporation methods. Using forward and reverse bias I–V measurement, we examined the key electrical characteristics of the Al/TPA-IFA/p-Si diode, including Φb, n, Rs, and Nss; we also estimated VD, NA, EF, ∆Φb, WD, Φb and Nss using C–V measurements under the different frequencies (10, 50, 100, 500 kHz, and 1 MHz) at room temperature. Using I–V data and the Thermionic Emission (TE) theory, basic electrical parameters such as ideality factor ( n ), and barrier height ( Φb ) values were computed as 3.01 and 0.716 eV. The fundamental diode parameters are highly frequency-dependent. It was also found that the series Resistance ( Rs ) values reduced with increasing frequency, but the barrier height ( Φb ) and the width of the depletion layer ( WD ) increased. It was found that when frequency increased, the diode capacitance reduced for our new Schottky-type diode. The diode’s potential conduction mechanisms were examined through the utilization of reverse lnI−V0.5 and forward lnI−V graphs. The transport properties of Al/TPA-IFA/p-Si diode are primarily governed by ohmic conduction, Space Charge Limited Current (SCLC), and Trap Charge Limited Current (TCLC) mechanisms at low, moderate, and high voltages, respectively. It was concluded that the Poole–Frenkel Emission (PFE) mechanism was dominant for the Al/TPA-IFA/p-Si diode. Ultimately, the findings confirmed that the TPA-IFA-based diode could be obtained for the electronic application.

Enhanced Photorefractive Performance by Controlling Ion‐Assisted Charge Injection and Accumulation with Random Biphenyl Co‐Polymerized Poly(Carbazolyl‐Amine)

AbstractIn this study, the synthesis of poly(carbazolyl‐amine)s with a random co‐polymerized biphenyl group through the Buchwald–Hartwig amination to enhance ion‐assisted space‐charge‐limited current (SCLC) and achieve efficient performance in photorefractive (PR) polymers, is reported. By modulating the polymer crystallinity, the efficient accumulation of ions near an electrode is achieved and enhanced ion‐assisted SCLC is realized, which results in a magnified electric field inside the polymers. The internal electric field is increased by the stacked charges injected from the electrode, and it is further enhanced by the washing out of ions. The polymer, blended with the electro–optical chromophore and sensitizer, exhibits a high PR sensitivity of 16.7 cm3 kJ−1 and a device stability of up to E = 80 V µm−1 at a wavelength of 633 nm, which is comparable to that of the inorganic crystals Bi12SiO20 and Sn2P2S6.

Composite polymer films with semiconductor nanocrystals for organic electronics and optoelectronics

Organic materials and, in particular, polymer films enhanced with certain nanocrystals have a potential for wide application in electronics and optoelectronics due to their organic flexibility, lightweight, simple integration, affordable manufacturing cost, and low environmental impact of their production. The purpose of this research is to investigate the electrical properties of polymer-based composite films containing Cd1–xCuxS nanocrystals in order to determine their prospects for use as conductive layers in organic electronics and optoelectronics. The paper contains a detailed description of the synthesis method of hybrid nanocomposite films based on peroxide reactive copolymer (PRC) with Cd1–xCuxS nanocrystals. The defect structure of the films is studied by analyzing the photoluminescence spectra. Current-voltage characteristics of the films with different Cd and Cu contents in the Cd1–xCuxS nanocrystals embedded into the polymer matrix, deposited on glass substrates are measured in the dark and under light illumination. The film conductivity is found to increase with the Cu content in the Cd1–xCuxS nanocrystals. The carrier transport corresponds to the Ohm law at low voltages and the space charge limited current (SCLC) or Poole–Frenkel mechanisms at higher ones. The conductivity of the polymer-based hybrid nanocomposite films has a weak dependence on the intensity of light illumination. The explanation of the obtained experimental results is proposed.

Columnar Mesomorphism in a Methylthio-Decorated Triindole for Enhanced Charge Transport.

We report a semiconducting triindole-based discotic liquid crystal (TRISMe) functionalized with six p-methylthiophenyl groups at its periphery. While initially a crystalline solid at room temperature, TRISMe transitions to a columnar hexagonal mesophase upon heating and retains this supramolecular organization upon subsequent cooling, despite having only three flexible alkyl chains attached to the core's nitrogens. The incorporation of methylthio groups effectively hinders tight molecular packing, stabilizing the columnar arrangement of this disk-shaped molecule. Single crystal analysis confirmed the high tendency of this compound to organize into a columnar architecture and the role played by the methylthio groups in reinforcing such structure. The mesomorphic behavior of TRISMe provides an opportunity for processing from its molten state. Notably, our research reveals significant differences in charge transport depending on the processing method, whether solution drop-casting or melt-based. TRISMe shows hole mobility values averaging 3 × 10-1 cm2 V-1 s-1 when incorporated in diode-type devices from the isotropic melt and annealed at the mesophase temperature, estimated by SCLC (space-charge-limited current) measurements. However, when integrated into solution-processed organic field-effect transistors (OFETs), crystalline TRISMe exhibits a hole mobility of 3 × 10-4 cm2 V-1 s-1. The observed differences can be attributed to a beneficial supramolecular assembly achieved in the mesophase in spite of its lower order. These results emphasize the material's potential for applications in easy-to-process electronic devices and highlight the potential of methylthio moieties in promoting columnar mesophases.

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

This Letter reports an investigation of hole transport in p-GaN/AlGaN/GaN heterostructures through experimental and theoretical analyses under varied conditions. Highly non-linear current–voltage (I–V) characteristics, obtained via the linear transmission line method measurements, are utilized for this study. At low bias voltage, the transport can be ascribed to the Schottky nature of the contact, while at high bias, the conduction is observed to be governed by space-charge limited current (SCLC). The Schottky characteristics (Schottky barrier height and non-ideality factor) and the SCLC exponent were analyzed for devices with varying contact spacings and at different high temperatures. The SCLC exponent, m, is in the range of 2≤m≤4 depending on the applied voltage range, revealing the existence of the trap states in the channel region. The findings of this work indicate that the charge injection, field-induced ionization, and trap states in the p-GaN channel are critical factors in the current transport of p-GaN/AlGaN/GaN heterostructure.

Ferroelectric properties and current mechanisms of BaTiO3/Nb:SrTiO3 thin films

[Formula: see text] thin film oxides have been deposited on [Formula: see text] substrates using a pulsed laser deposition system. Different annealing methods were thereafter used to assess the ferroelectricity of the grown films. The residual polarization value, 2Pr, of 4.205 [Formula: see text]C/cm2 and saturated residual polarization value, 2Pmax, of 15.484 [Formula: see text]C/cm2 were obtained using in-situ annealing. After performing rapid thermal annealing (RTA) annealing, the residual polarization value rose to 4.676 [Formula: see text]C/cm2 and the saturated residual polarization value rose to 18.723 [Formula: see text]C/cm2. Furthermore, a comparison of results showed that the saturation test frequency of the in-situ annealing was 10 times higher than the saturation test frequency of the RTA. This could be explained by the fact that the secondary high-temperature annealing led to a decrease in the conductivity of the doped oxide and, thereby, a decrease in the effective electric field that was applied to both ends of the BTO ([Formula: see text]) film. Thus, a lower frequency was required to ensure a flip of all ferroelectric domains within the BTO film. By testing the fatigue frequency at 100 kHz, [Formula: see text] stable cycles in both annealing methods and the results confirmed the good stability of the device performance. A linear fit analysis of the [Formula: see text] – [Formula: see text] curves showed under in-situ annealing the presence of both a bulk-limited current mechanism that was dominated by the space charge limited current (SCLC) and Pool–Frenkel (PF) mechanisms, and an interface-limited current that was dominated by the Fowler–Nordheim (FN) mechanism in the structure. After RTA annealing, the conducting mechanism is ohmic contact at low electric field and the SCLC mechanism at high field strength. The results show that after RTA annealing, the quality and ferroelectric properties of the films are significantly improved compared to those under in-situ annealing. These results showed that the BTO/NSTO/STO ([Formula: see text]) structure had a standard test frequency as well as reliable stability. The BTO/NSTO/STO structure showed, therefore, promising applications in future nonvolatile information memory devices.

Two-dimensional space charge limited current in regime between accelerating diode and drift space for sheet and circular beam

We develop a general electrostatic steady-state model to calculate the two-dimensional (2D) space-charge-limited current (SCLC) with an initial velocity v0 (i.e., kinetic energy eKV=mv02/2) injected from a cathode into a vacuum diode with a spacing D and a potential difference of Vg. We consider two types of beam cross section: (a) a sheet beam with a width W and (b) a circular beam with a radius R, where both W and R are larger than D in the calculation. By introducing a parameter ε≡KV/Vg≥0, we can tune the operating regime to be in between the accelerating diode (ε≪1) and drift space (ε≫1). Hence, we verify the 2D SCLC model by converging to some prior analytical findings such as the 2D Child–Langmuir law at ε = 0, 2D SCLC at drift space at ε≫1, and their 1D limits at W/D≫1 or R/D≫1. Our 2D SCLC model indicates that there is a maximal value at ε∼1/60, which is independent of W/D or R/D. Furthermore, the hysteresis behavior is also studied when the injected current density is beyond the SCLC threshold and its dynamics are mainly influenced by ε instead of geometrical effect. This model is useful in high current electron beam emission with a finite emission area and with a non-negligible arbitrary injection kinetic energy.

Structural and physical properties of Pb(Zr0.4Ti0.6)O3 epitaxial film with LaNiO3 electrodes

Epitaxial LaNiO3 (LNO)/PbZr0.4Ti0.6O3 (PZT)/LaNiO3 heterostructures have been deposited on LaAlO3 (LAO) substrates, in which LNO films were prepared by magnetron sputtering and PZT films with thicknesses ranging from 40 nm to 160 nm were deposited via sol-gel method. It is found that the structural and physical properties of PZT films are closely related to the tetragonality (c/a-1). With increasing PZT thickness, both tetragonality and remanent polarization increase, and the maximum tetragonality and remanent polarization correspond to a 120-nm-thick PZT film capacitor with a remanent polarization of 61.6 μC/cm2 measured at 425.00 kV/cm. However, as the thickness of PZT film is further increased, the ferroelectric polarization decreases which is attributed to relaxation of the PZT film. The leakage current mechanism of the capacitor remains unchanged regardless of the PZT thickness. It is Space Charge Limited Current (SCLC) conduction mechanism at high electric fields and Ohmic conduction mechanism at low electric fields.

On the importance of varying device thickness and temperature on the outcome of space-charge-limited current measurements

Space-charge-limited current (SCLC) measurements are commonly employed to characterize charge-transport properties of semiconductors used in next-generation thin-film optoelectronics, such as organic π-conjugated small molecules and polymers, and metal-halide perovskites. Despite the wide-spread adoption of the method, there is no community-wide consensus around how SCLC measurements should be performed, nor how the data should be analyzed and reported. While it is common to report device characteristics by employing a simplistic analytical model for fitting a single J-V curve obtained from a solitary device at room temperature—sometimes in a very select voltage range—expectedly, such an approach will often not give an accurate picture of the underlying physics. On that account, we here aim to highlight the importance of reporting values extracted from not just a solitary single-carrier device measured at room temperature, but from devices with different thicknesses measured at varying device temperature. We also highlight how the choice of device thickness is especially critical in determining what device and material characteristics can be extracted from SCLC measurements, and how this choice can greatly affect the conclusions drawn about the probed semiconducting material. While other factors could affect the outcome of an SCLC measurement and the subsequent analysis, we hope that the topics covered in this article will result in overall improved charge-transport characterization of thin-film semiconductors and initiate a broader discussion into SCLC metrology at large.

Photosensitive properties of Schottky type photodiodes prepared by spin coating of isoniazid Schiff base thin film on p-Si

In this study, a layer of isonicotinohydrazide and pyrene-based Schiff base (PyMIs) was formed on the front side of a p-Si semiconductor using the spin coating method, and an Al/PyMIs/p-Si/Al diode was fabricated. The I-V characteristics of the fabricated diode were measured under dark and from 20 to 100 mW/cm2 illumination intensities for both forward and reverse bias. Diode parameters, including saturation current (\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${I}_{0}$$\\end{document}), ideality factor (n), and barrier height (\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\varphi }_{b}$$\\end{document}) were investigated for all measurements based on thermionic emission theory. The values n changed from 2.51 to 2.05, and the \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\varphi }_{b}$$\\end{document} changed from 0.77 eV to 0.86 eV as light intensity increased from dark to 100 mW/cm2. The series resistance (\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${R}_{s}$$\\end{document}) values of the diode were investigated using the modified Norde’s function and Cheung’s functions. An analysis of the forward \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$log\\left( I \\right) - log\\left( V \\right)$$\\end{document} plot of Al/PyMIs/p-Si (MOmS)-type diode specified the carrier transport domination by ohmic conduction in the lower bias regions, by the space-charge-limited current (SCLC) at medium bias regions and the trap-charge limit current (TCLC) transport mechanism at higher bias regions. The fabricated diode exhibited typical photodiode behavior with reverse current values increasing from 9.13 × 10− 6 A to 1.05 × 10− 4 A, respectively. Furthermore, \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$I-V$$\\end{document} characteristics illuminated from 20 to 100 mW/cm2 were also studied, and they indicated that the Al/PyMIs/p-Si diode could operate in a photovoltaic regime.