SP8T Switch Research Articles

SP8T Switch Design using Cascaded SPDT Switches for Monostatic Microwave Imaging System in Medical Application

Wydawnictwo SIGMA-NOT wydaje czasopisma fachowe informujące swoich czytelników o najnowszych osiągnięciach naukowych i nowoczesnych rozwiązaniach technicznych w Polsce i na świecie, popularyzuje problemy techniczne oraz poszerza wiedzę i kulturę techniczną.

Reliable and Compact 3- and 4-Bit Phase Shifters Using MEMS SP4T and SP8T Switches

This paper presents radio frequency (RF) micro-electromechanical system-based 3- and 4-bit phase shifters using single-pole-four-throw (SP4T) and single-pole-eight-throw (SP8T) switches. The design is fabricated on $635~\mu \text{m}$ alumina substrate using a surface micromachining process. SP4T and SP8T switches demonstrate measured return loss of >16 dB, worst case insertion loss of 1.66 dB, and isolation of >13.6 dB up to 40 GHz. Total area of the SP4T and SP8T switches is 0.98 mm2 and 1.66 mm2, respectively. Switches are capable of handling 1 W of incident RF power and can sustain up to 1 billion cycles at 85°C. Finally, 3- and 4-bit phase shifters deliver measured return loss of >12 dB, average insertion loss of 1 billion cycles with 0.1 W of power in cold switching. In addition, phase shifters also worked satisfactory up to >400 million cycles with 0.5 W of power at 85 °C in hot switching condition. Devices were enclosed within a low-cost package and characterized them systematically. [2017-0104]

Ka-band reliable and compact 3-bit true-time-delay phase shifter using MEMS single-pole-eight-throw switching networks

This paper presents a radio frequency micro-electromechanical system (RF MEMS) based 3-bit phase shifter using MEMS single-pole-eight-throw (SP8T) switches. Devices are fabricated on 635 µm alumina substrate utilizing on the coplanar waveguide (CPW) transmission line. Single switch dimensions are 0.14 × 0.23 mm2 which is much smaller than Si-on-insulator switches. The symmetric and compact SP8T switch is the primary building block of the 3-bit phase shifter. The SP8T switch results in isolation levels of 31–15 dB, return loss of 33–18 dB and insertion loss of 0.6–1.9 dB, respectively, at 26–40 GHz. Later, two SP8T switches are connected back to back to develop the 3-bit phase shifter using different delay lines at 35 GHz. Finally, the phase shifter provides average return loss of better than 14 dB and average insertion loss of 4.4 dB over the 34.75–35.25 GHz. Measured average phase error is less than 0.98° at 35 GHz. The total area of the fabricated 3-bit phase shifter is 5.95 mm2. SP8T switches are capable of handling 0.1–1 W of power up to 100 million cycles which is sufficient power handling capability for wireless communication systems. Reliability of the phase shifter is extensively characterized with different incident RF powers at room temperature (25°C) and discussed in detail. To the best of the authors’ knowledge, this is the first reported MEMS 3-bit phase shifter in the literature that has used a minimum number of switching elements per phase state.

Effects and contrasts of silicon‐on‐insulator floating‐body and body‐contacted field‐effect transistors to the design of high‐performance antenna switches

A theoretical analysis and contrast of silicon-on-insulator (SOI) floating-body (FB) and body-contacted (BC) metal–oxide–semiconductor field-effect transistors (FETs) including insertion loss (IL), isolation, power handling capability as well as harmonics for radio frequency switches applications, are firstly developed in detail. From the presented investigation, lower IL and smaller chip size can be obtained using FB FETs, while the BC devices are beneficial to isolation and harmonics improvement. As an experimental vehicle for the presented analysis, the high-power single-pole eight-throw (SP8T) antenna switches for multi-mode multi-band applications, are fabricated in a partially depleted 0.18 μm SOI process based on FB and BC FETs, respectively. At 1.9 GHz, the tested IL, TR × 1 to TR × 3 isolation, and P −0.1 dB of the FB and BC SP8T switches are approximately 0.53/0.65 dB, 27.6/29.3 dB and 38.0/38.4 dBm. For the two cases, the second and third harmonics are −70.6/−75.5 and −60.4/−79.9 dBc, respectively, with a +33 dBm input power at 1.9 GHz. The experimental results strongly support the analysis that the FB FET is a preferred device in low loss or low throw-count switching design while the BC FET is a better selection in the applications that demand high power and low harmonic.

GaAs MMIC Wideband SP8T Switch

this paper mainly introduces a GaAs MMIC Wideband SP8T Switch. Firstly, every possible configuration is contrasted, the theories of basic GaAs switch configurations are mentioned. Secondly, the theories of basic GaAs switch configurations are mentioned. Subsequently, appropriate topology is selected for this SP8T switch. This switch has been realized by 0.5µm GaAs pHEMT process. this switch exhibits high performance: over DC~2.5GHz, insertion loss is lower than 1.27dB; The isolation is lower than 30dB; the ripple variation of insertion loss is less than ±0.1dB; input return loss is lower than 22dB; on state, output return loss is lower than 18dB; off state, over 0.2GHz-2.5GHz, output return loss is lower than 10dB; on and off time are less than 75ns. The layout of the switch with a chip size is 1.11 mm×1.51mm.

A Single-Pole, Eight-Throw, Radio-Frequency, MicroElectroMechanical Systems Switch for Multi-Band / Multi-Mode Front-End Module

This paper presents a single-pole eight-throw(SP8T) switch based on proposed a radio-frequency(RF) microelectromechanical systems (MEMS) switches. The proposed switch was driven by a double stop(DS) comb drive, with a lateral resistive contact. Additionally, the proposed switch was designed to have tapered signal line and bi-directionally actuated. A forward actuation connects between signal lines and contact part, and the output becomes on-state. A reverse actuation connects between ground lines and contact part, and the output becomes off-state. The SP8T switch of 3-stage tree topology was developed based on an arrangement of the proposed RF MEMS switches. The developed SP8T switch had an actuation voltage of 12 V, an insertion loss of 1.3 dB, a return loss of 15.1 dB, and an isolation of 31.4 dB at 6 GHz.

60-GHz-Band Switched-Beam Eight-Sector Antenna with SP8T Switch for 180.DEG. Azimuth Scan

This paper proposes a new switched-beam eight-sector antenna for multi-gigabit wireless LAN in the 60-GHz band. Our antenna system introduces access-point (AP) and user-terminal (UT) antennas having the same sec θ pattern in the elevation plane so that the received signal power at the receiver is kept constant, independent of the position of the UT. For this system, an eight-sector antenna, a single-pole eight-throw (SP8T) switch, and a beam control unit are integrated as the switched-beam eight-sector antenna. The specifications of the antenna are wide bandwidth (≥3GHz), high-gain (≥13dBi at θ=66°), and wide coverage area in both azimuth (0° ≤ φ ≤ 180°) and elevation planes (0° ≤ θ ≤ 66°). The antenna beam is steered within the specified response time (which is short) by the Media Access Control (MAC). In our antenna, both high gain for a wide elevation angle and wide bandwidth are obtained by using the proposed closely spaced waveguide slot array antenna, which is used as each sector of the eight-sector antenna. The SP8T switch with the beam control unit enables 180° beam scan in the azimuth plane. In a component evaluation, the eight-sector antenna achieves a 10-dB return loss bandwidth of 8GHz with more than 40-dB port-to-port isolation. Radiation characteristics of the eight-sector antenna indicate that it covers 82% of the entire coverage area at the center frequency and that the coverage rate in the operating frequency band is from 78% to 88%. The performance of the SP8T switch and the beam control unit is verified by measuring the insertion loss at all eight ports and the switching response time. In the antenna system evaluation, measurement by using two prototype antennas as the AP and the UT antennas in the usage condition indicates that the measured received signal power meets the specified constant power for the specified wide elevation angle range, independent of the position of the UT. These experimental results verify the effectiveness of our proposed antenna for multi-gigabit WLAN.