Soluble Indium Research Articles

Cytotoxicity Assessment of Gallium- and Indium-Based Nanoparticles Toward Human Bronchial Epithelial Cells Using an Impedance-Based Real-Time Cell Analyzer.

The semiconductor manufacturing sector plans to introduce III/V film structures (eg, gallium arsenide (GaAs), indium arsenide (InAs) onto silicon wafers due to their high electron mobility and low power consumption. Aqueous solutions generated during chemical and mechanical planarization of silicon wafers can contain a mixture of metal oxide nanoparticles (NPs) and soluble indium, gallium, and arsenic. In this work, the cytotoxicity induced by Ga- and In-based NPs (GaAs, InAs, Ga2O3, In2O3) and soluble III-V salts on human bronchial epithelial cells (16HBE14o-) was evaluated using a cell impedance real-time cell analysis (RTCA) system. The RTCA system provided inhibition data at different concentrations for multiple time points, for example, GaAs (25 mg/L) caused 60% inhibition after 8 hours of exposure and 100% growth inhibition after 24 hours. Direct testing of As(III) and As(V) demonstrated significant cytotoxicity with 50% growth inhibition concentrations after 16-hour exposure (IC50) of 2.4 and 4.5 mg/L, respectively. Cell signaling with rapid rise and decrease in signal was unique to arsenic cytotoxicity, a precursor of strong cytotoxicity over the longer term. In contrast with arsenic, soluble gallium(III) and indium(III) were less toxic. Whereas the oxide NPs caused low cytotoxicity, the arsenide compounds were highly inhibitory (IC50 of GaAs and InAs = 6.2 and 68 mg/L, respectively). Dissolution experiments over 7 days revealed that arsenic was fully leached from GaAs NPs, whereas only 10% of the arsenic was leached out of InAs NPs. These results indicate that the cytotoxicity of GaAs and InAs NPs is largely due to the dissolution of toxic arsenic species.

Recovery of indium from aqueous solutions by the Gram-negative bacterium Shewanella algae

This is the first report of an environmentally friendly microbial method to recover soluble indium(III) from aqueous solutions. Microbial uptake of soluble indium(III) was successfully achieved at room temperature over a pH range of 2.4–3.9 using the Gram-negative bacterium Shewanella algae. The microbial uptake of indium by the resting cells of S. algae was very rapid: 0.1mol/m3 (11.4ppm) indium(III) ions were completely collected by bacterial cells within 10min. The pH value and the concentration of bacterial cells in the aqueous indium(III) solutions significantly affected the recovery fraction of soluble indium(III). After drying the indium-adsorbed bacterium at 50°C for 12h, the indium concentration in the dried biomass was approximately 5.4% (w/w), 474-times the concentration of indium(III) in the initial solution (0.94mol/m3). Heating the bacterial cells at approximately 800°C for 2h yielded a solid condensate containing 40% indium (w/w), 4300-times the concentration of indium(III) in the initial solution. These methods represent an efficient and cost-effective method for recovery of indium(III) from wastewaters.

バイオ吸着によるインジウムの回収と使用済み液晶パネル資源化への応用

Microbial adsorption of soluble indium(III) was successfully achieved at room temperature over the pH range 2.3 to 3.5 using the gram-negative bacterium Shewanella algae. The microbial uptake of indium by the resting cells of S. algae was a fast process: 10-100 ppm indium(III) ions were completely collected into the bacterial cells within 30 min. The pH value and the cell concentration in aqueous indium(III) solutions had a significant effect on the adsorption fraction of soluble indium(III). The adsorption capacity of S. algae cells was determined as 41±2 mg-In/g-dry cells, indicating that the 100 ppm aqueous InCl3 solution was concentrated up to 680-fold by the microbial adsorption. The optimal pH for microbial adsorption was found to be 0.9-1.4 for Sn(IV), pH 2.3-3.5 for In(III), pH 2.9-4.3 for Al(III), respectively. For microbial recovery of indium from waste liquid crystal display (LCD) panel, moreover, S. algae cells were able to collect selectively indium(III) to the bacterial cells, after indium leaching from spent LCD panel with dilute HCl solution under hydrothermal conditions (120°C, 0.198 MPa, 5 min).

Indium lung—case reports and epidemiology

The present review is aimed to introduce an new occupational lung disease, Indium Lung. We searched case reports and epidemiological studies concerning indium-related lung diseases and reviewed. Up to March, 2010, 7 cases of interstitial pneumonia in Japanese indium-exposed workers, two cases of pulmonary alveolar proteinosis (PAP) in US indium-exposed workers, one case of PAP in a Chinese indium-exposed worker, and 4 cross-sectional surveys in Japan had been published. All cases and epidemiological studies in Japan indicate that exposure to hardly soluble indium compounds causes interstitial as well as emphysematous lung damages, which we call "Indium Lung". Based on the epidemiological studies, the Japan Society for Occupational Health proposed 3 μg/l of indium in serum as an occupational exposure limit based on biological monitoring to prevent significant increase of KL-6. Long-term follow-up of currently and formerly indium-exposed workers is essential not only to clarify the natural history of indium lung but also to trace the incidence of lung cancer. It is also necessary to elucidate the mechanism of indium lung and difference in clinical manifestations between Japanese and US cases.

Exposure to hardly soluble indium compounds in ITO production and recycling plants is a new risk for interstitial lung damage

Objectives:To identify the effects of indium on the lung and to assess exposure-effect and exposure-response relations between indium exposure and effects on the lungs.Methods:Ninety three male indium exposed and 93...

P3004 インジウム化合物粉塵曝露作業者の呼吸器影響(一般演題:ポスター,地方の時代の産業保健,第79回日本産業衛生学会)

P3004 インジウム化合物粉塵曝露作業者の呼吸器影響(一般演題:ポスター,地方の時代の産業保健,第79回日本産業衛生学会)

Indium(I) trifluoromethanesulfonate and other soluble salts for univalent indium chemistry.

Herein we report the synthesis, structure and preliminary reactivity studies of a series of unusually soluble indium(i) salts that are improved alternatives to indium(i) halide reagents.

Enzyme Immunoassay to Determine Heavy Metals Using Antibodies to Specific Metal-EDTA Complexes: Optimization and Validation of an Immunoassay for Soluble Indium

An immunoassay that measures soluble indium at concentrations from 0.005 ppb to 320 ppm is described. The assay utilized a monoclonal antibody that binds specifically to indium-EDTA complexes in an antigen-inhibition format. The sensitivity of the assay could be modulated by changing the nature of the soluble inhibiting antigen. The range of the assay was from 0.6 to 320 ppm, 0.1 to 120 ppm, or 0.005 to 2000 ppb when indium-EDTA, indium-(p-nitrobenzyl)-EDTA, or indium-EDTA-bovine serum albumin, respectively was used as the soluble inhibiting antigen. The assay reliably monitored indium concentration in the presence of a 100-fold excess of manganese, magnesium, or copper ions and the quantitation of indium by immunoassay correlated closely with the values obtained using atomic absorption spectroscopy. This technology could be employed in immunoassays for other metals that are priority pollutants.

Investigation of soluble indium chelates for groundwater and hydrothermal fluid tracing

Indium is an excellent tracer with a unique combination of good activation analysis sensitivity retaining most of the advantages of radioactive tracers without creating health or environemental risk, and low background concentration in surface and subsurface fluids. The organic chelating agents ethylenediaminetetraacetic acid (EDTA) and nitrilotriacetic acid (NTA) were selected to enhance the solubility of In as a tracer within the pH range of groundwater and hydrothermal fluids. The thermal stability of indium chelates of EDTA and NTA was investigated at temperatures from 22 to 240°C. Degradation of In(III)-EDTA, observed at and above 200°C, is attributed to metal dissociation followed by thermal decomposition of the organic ligand. Degradation of In(III)-NTA, observed at temperatures greater than 150°C, is probably due to significant decrease of the thermodynamic formation constant. The results suggest that soluble indium chelates can be used effectively as tracers for surface and groundwater flow and transport studies. The applicability of In(III)-EDTA as a conservative tracer can be extended to low-temperature geothermal reservoirs where ionic chemical tracers are not fully conservative.

ANION CATALYZED ACID SOLVOLYSIS OF INDIUM(III) PORPHYRINS

Abstract Solvolysis of several water soluble indium(III) porphyrins is catalyzed by both protons and anions. For indium(III)-tetrakis-(4-sulfonato-phenyl)porphyrin, the anion effect is in the order Cl−, Br−, SCN− > ClO− 4, BF− 4, HSO− 4. In HClO4/NaCl, Rate=k(In3+P) (Cl−)2 (ho)2.2

Electrode reactions during the electrodeposition of indium from acid sulphate solutions

Electrodeposition of indium from acid sulphate solutions has been examined and data are reported concerning cathode current efficiencies (CCE). Optimum process conditions are suggested as: 20 g l -1 In 2(SO 4) 3 at pH 2.0, 25 °C and 20 mA cm −2 with CCE=64%. Insoluble platinum, possibly combined with soluble indium, is the most suitable anode. Analysis of the activation polarisation characteristics suggests that for the cathodic reaction two Tafel regions may be observed: at low overpotential (<450 mV) a slope of 210 mV per decade is found, the rate-determining step (RDS) being In 3+ → In 2+ while at higher overpotentials the slope rises to 325 mV per decade, the RDS being In 3+ → In +. For the anodic dissolution, a low overpotential range (5 – 28 mV) has a Tafel slope of 22.1 mV per decade and an RDS of In → In +, while a second region (η>30mV) has a slope of 64.6 mV per decade and an RDS of In → In 2+.

A study of the differential capacitance of indium in some aqueous solutions

Summaryo1.Of the systems studied, the indium/sodium sulphate system is the only one to show potential regions where the electrode-aqueous solution interphase is considered to be uncomplicated by adsorption or the intrusion of films. An estimate of the p.z.c. for this system is −0.95±0.02 V.2.It is not possible to determine unequivocally the p.z.c. for indium in fluoride electrolytes, although a well-defined capacitance minimum occurs at −0.93±0.02 V in dilute fluoride solutions.3.For unacidified chloride and perchlorate electrolytes a well-defined capacitance minimum is not observed as the ionic concentration is lowered.4.In unacidified solutions of KF and NaClO4 at high ionic concentrations, the anodic rise in electrode capacitance due to lattice oxidation is suppressed, due to the irreversible formation of highly insoluble films at the electrode surface.5.A pseudocapacitance peak at −0.90 V in KF solutions, −0.90 V in NaClO4 solutions and −0.95 V in KCl solutions is concluded as being due to OH− ion interaction with the indium electrode surface and subsequent dissolution of the metal lattice. Of the systems studied, the indium/sodium sulphate system is the only one to show potential regions where the electrode-aqueous solution interphase is considered to be uncomplicated by adsorption or the intrusion of films. An estimate of the p.z.c. for this system is −0.95±0.02 V. It is not possible to determine unequivocally the p.z.c. for indium in fluoride electrolytes, although a well-defined capacitance minimum occurs at −0.93±0.02 V in dilute fluoride solutions. For unacidified chloride and perchlorate electrolytes a well-defined capacitance minimum is not observed as the ionic concentration is lowered. In unacidified solutions of KF and NaClO4 at high ionic concentrations, the anodic rise in electrode capacitance due to lattice oxidation is suppressed, due to the irreversible formation of highly insoluble films at the electrode surface. A pseudocapacitance peak at −0.90 V in KF solutions, −0.90 V in NaClO4 solutions and −0.95 V in KCl solutions is concluded as being due to OH− ion interaction with the indium electrode surface and subsequent dissolution of the metal lattice. The concentration of solution soluble indium species in equilibrium with the electrode at the capacitance peak has been calculated for the fluoride and chloride cases (1 mol l−1, unacidified solutions) at these peak potentials.

A study of the differential capacitance of indium in some aqueous solutions

Summary o 1. Of the systems studied, the indium/sodium sulphate system is the only one to show potential regions where the electrode-aqueous solution interphase is considered to be uncomplicated by adsorption or the intrusion of films. An estimate of the p.z.c. for this system is −0.95±0.02 V. 2. It is not possible to determine unequivocally the p.z.c. for indium in fluoride electrolytes, although a well-defined capacitance minimum occurs at −0.93±0.02 V in dilute fluoride solutions. 3. For unacidified chloride and perchlorate electrolytes a well-defined capacitance minimum is not observed as the ionic concentration is lowered. 4. In unacidified solutions of KF and NaClO 4 at high ionic concentrations, the anodic rise in electrode capacitance due to lattice oxidation is suppressed, due to the irreversible formation of highly insoluble films at the electrode surface. 5. A pseudocapacitance peak at −0.90 V in KF solutions, −0.90 V in NaClO 4 solutions and −0.95 V in KCl solutions is concluded as being due to OH − ion interaction with the indium electrode surface and subsequent dissolution of the metal lattice. The concentration of solution soluble indium species in equilibrium with the electrode at the capacitance peak has been calculated for the fluoride and chloride cases (1 mol l −1 , unacidified solutions) at these peak potentials.