Solid-state Quantum Technologies Research Articles

Exploring the properties of the VB− defect in hBN: optical spin polarization, Rabi oscillations, and coherent nuclei modulation

Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap Eg = 6 eV, containing a negatively charged boron vacancy ( VB− ) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value of VB− spin polarization under optical pumping with λ ext = 532 nm laser using high-frequency (ν mw = 94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to be P ≈ 38.4%. Our study reveals that Rabi oscillations induced on polarized spin states persist for up to 30–40 μs, which is nearly two orders of magnitude longer than what was previously reported. Analysis of the coherent electron–nuclear interaction through the observed electron spin echo envelope modulation made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a corresponding quadrupole coupling constant C q = 180 kHz related to nuclear quadrupole moment of 14N. These results have fundamental importance for understanding the spin properties of boron vacancy.

Large scale purification in semiconductors using Rydberg excitons

Improving the quantum coherence of solid-state systems is a decisive factor in realizing solid-state quantum technologies. The key to optimize quantum coherence lies in reducing the detrimental influence of noise sources such as spin noise and charge noise. Here we demonstrate that we can utilize highly-excited Rydberg excitons to neutralize charged impurities in the semiconductor Cuprous Oxide - an effect we call purification. Purification reduces detrimental electrical stray fields drastically. We observe that the absorption of the purified crystal increases by up to 25% and that the purification effect is long-lived and may persist for hundreds of microseconds or even longer. We investigate the interaction between Rydberg excitons and impurities and find that it is long-ranged and based on charge-induced dipole interactions. Using a time-resolved pump-probe technique, we can discriminate purification from Rydberg blockade, which has been a long-standing goal in excitonic Rydberg systems.

Highly-excited Rydberg excitons in synthetic thin-film cuprous oxide

Cuprous oxide (hbox {Cu}{}_2hbox {O}) has recently emerged as a promising material in solid-state quantum technology, specifically for its excitonic Rydberg states characterized by large principal quantum numbers (n). The significant wavefunction size of these highly-excited states (proportional to n^2) enables strong long-range dipole-dipole (proportional to n^4) and van der Waals interactions (proportional to n^{11}). Currently, the highest-lying Rydberg states are found in naturally occurring hbox {Cu}_2hbox {O}. However, for technological applications, the ability to grow high-quality synthetic samples is essential. The fabrication of thin-film hbox {Cu}{}_2hbox {O} samples is of particular interest as they hold potential for observing extreme single-photon nonlinearities through the Rydberg blockade. Nevertheless, due to the susceptibility of high-lying states to charged impurities, growing synthetic samples of sufficient quality poses a substantial challenge. This study successfully demonstrates the CMOS-compatible synthesis of a hbox {Cu}{}_2hbox {O} thin film on a transparent substrate that showcases Rydberg excitons up to n = 8 which is readily suitable for photonic device fabrications. These findings mark a significant advancement towards the realization of scalable and on-chip integrable Rydberg quantum technologies.

Shared control of a 16 semiconductor quantum dot crossbar array

The efficient control of a large number of qubits is one of the most challenging aspects for practical quantum computing. Current approaches in solid-state quantum technology are based on brute-force methods, where each and every qubit requires at least one unique control line—an approach that will become unsustainable when scaling to the required millions of qubits. Here, inspired by random-access architectures in classical electronics, we introduce the shared control of semiconductor quantum dots to efficiently operate a two-dimensional crossbar array in planar germanium. We tune the entire array, comprising 16 quantum dots, to the few-hole regime. We then confine an odd number of holes in each site to isolate an unpaired spin per dot. Moving forward, we demonstrate on a vertical and a horizontal double quantum dot a method for the selective control of the interdot coupling and achieve a tunnel coupling tunability over more than 10 GHz. The operation of a quantum electronic device with fewer control terminals than tunable experimental parameters represents a compelling step forward in the construction of scalable quantum technology.

Color Centers in Hexagonal Boron Nitride.

Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultraviolet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers.

Enhanced conversion efficiency of vacancy-related color centers in diamonds grown on a patterned metal surface by chemical vapor deposition

Vacancy-related color centers in diamonds, such as nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers, have good application prospects in solid-state quantum technologies. In various applications, shot noise-limited sensitivity is determined by coherence time and photoluminescence (PL) intensity, which depends on the color center density. However, the conversion efficiencies of impurity atoms to color centers are low and usually increased by electron irradiation, which destroy the lattice structure and create defects leading to decoherence. In this study, we epitaxially grew diamond layers containing color centers on surfaces coated with metal stripes. The PL intensities of NV0, NV−, and SiV− centers located directly above the metal surface were 3.27, 3.47, and 11.15 times higher than those of the diamond epitaxial region. The [N]–[NV] and [Si]–[SiV] conversion efficiencies were 63.26% and 35.68%, respectively, which were comparable to or even better than those achieved by electron irradiation. Moreover, the region above the metal exhibited a high lattice quality, longer transverse relaxation time, higher magnetic field sensitivity, and larger NV−/NV0 ratio. The findings of this study can help advance the existing research on NV-based magnetometers, biofluorescent labeling, and interfacial spin quantum memory and be potentially applied to other vacancy-related color centers, such as germanium-vacancy.

Optical observation of single spins in silicon.

The global quantum internet will require long-lived, telecommunications-band photon-matter interfaces manufactured at scale1. Preliminary quantum networks based on photon-matter interfaces that meet a subset of these demands are encouraging efforts to identify new high-performance alternatives2. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits3. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon-spin interfaces in silicon has remained elusive. In this work, we integrate individually addressable 'T centre' photon-spin qubits in silicon photonic structures and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.

Optical and Spin Properties of NV Center Ensembles in Diamond Nano-Pillars.

Nitrogen-vacancy (NV) color centers in diamond are excellent quantum sensors possessing high sensitivity and nano-scale spatial resolution. Their integration in photonic structures is often desired, since it leads to an increased photon emission and also allows the realization of solid-state quantum technology architectures. Here, we report the fabrication of diamond nano-pillars with diameters up to 1000 nm by electron beam lithography and inductively coupled plasma reactive ion etching in nitrogen-rich diamonds (type Ib) with [100] and [111] crystal orientations. The NV centers were created by keV-He ion bombardment and subsequent annealing, and we estimate an average number of NVs per pillar to be 4300 ± 300 and 520 ± 120 for the [100] and [111] samples, respectively. Lifetime measurements of the NVs’ excited state showed two time constants with average values of τ1 ≈ 2 ns and τ2 ≈ 8 ns, which are shorter as compared to a single color center in a bulk crystal (τ ≈ 10 ns). This is probably due to a coupling between the NVs as well as due to interaction with bombardment-induced defects and substitutional nitrogen (P1 centers). Optically detected magnetic resonance measurements revealed a contrast of about 5% and average coherence and relaxation times of T2 [100] = 420 ± 40 ns, T2 [111] = 560 ± 50 ns, and T1 [100] = 162 ± 11 μs, T1 [111] = 174 ± 24 μs. These pillars could find an application for scanning probe magnetic field imaging.

Quantum information processing with integrated silicon carbide photonics

Color centers in wide bandgap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, and spin–photon and spin–spin entanglement, as well as the potential for scalability. Silicon carbide color centers integrated into photonic devices span a wide range of applications in quantum information processing in a material platform with quantum-grade wafer availability and advanced processing capabilities. Recent progress in emitter generation and characterization, nanofabrication, device design, and quantum optical studies has amplified the scientific interest in this platform. We provide a conceptual and quantitative analysis of the role of silicon carbide integrated photonics in three key application areas: quantum networking, simulation, and computing.

Photoassisted ionization spectroscopy of few implanted bismuth orbitals in a silicon-on-insulator device

The electrically detected orbital spectrum of a mesoscopic silicon device containing a small number of donors has been investigated. The device was fabricated on silicon-on-insulator with an optically active channel containing 6×105 substitutional bismuth centers introduced by ion implantation. The 1s(A1)→2p± orbital transition at the energy associated with isolated bismuth donors was detected via a change in photocurrent when illuminated by THz light from a free electron laser. The spectral dependence on bias, temperature, and laser intensity is explored to determine optimum conditions for detecting orbital transitions in smaller devices with fewer donors. These results suggest that photo-induced impact ionization can offer a route for the spectroscopic detection of few impurities providing a useful tool for the development of solid-state quantum technologies.

Optimal entanglement witness for Cooper pair splitters

The generation of spin-entangled electrons is an important prerequisite for future solid-state quantum technologies. Cooper pairs in a superconductor can be split into separate electrons in a spin-singlet state, however, detecting their entanglement remains an open experimental challenge. Proposals to detect the entanglement by violating a Bell inequality typically require a large number of current cross-correlation measurements, and not all entangled states can be detected in this way. Here, we instead formulate an entanglement witness that can detect the spin-entanglement using only three cross-correlation measurements of the currents in the outputs of a Cooper pair splitter. We identify the optimal measurement settings for witnessing the entanglement, and we illustrate the use of our entanglement witness with a realistic model of a Cooper pair splitter for which we evaluate the cross-correlations of the output currents. Specifically, we find that the entanglement of the spins can be detected even with a moderate level of decoherence. Our work thereby paves the way for an experimental detection of the entanglement produced by Cooper pair splitters.

First-Principles Predictions of Out-of-Plane Group IV and V Dimers as High-Symmetry, High-Spin Defects in Hexagonal Boron Nitride.

Hexagonal boron nitride (h-BN) has been recently found to host a variety of quantum point defects, which are promising candidates as single-photon sources for solid-state quantum nanophotonic applications. Most recently, optically addressable spin qubits in h-BN have been the focus of intensive research due to their unique potential in quantum computation, communication, and sensing. However, the number of high-symmetry, high-spin defects that are desirable for developing spin qubits in h-BN is highly limited. Here, we combine density functional theory (DFT) and quantum embedding theories to show that out-of-plane XNYi dimer defects (X, Y = C, N, P, and Si) form a new class of stable C3v spin-triplet defects in h-BN. We find that the dimer defects have a robust 3A2 ground state and 3E excited state, both of which are isolated from the h-BN bulk states. We show that 1E and 1A shelving states exist and they are positioned between the 3E and 3A2 states for all the dimer defects considered in this study. To support future experimental identification of the XNYi dimer defects, we provide extensive characterization of the defects in terms of their spin and optical properties. We predict that the zero-phonon line of the spin-triplet XNYi defects lies in the visible range (800 nm to 500 nm). We compute the zero-field splitting of the dimers' spin to range from 1.79 GHz (SiNPi0) to 29.5 GHz (CNNi0). Our results broaden the scope of high-spin defect candidates that would be useful for the development of spin-based solid-state quantum technologies in two-dimensional hexagonal boron nitride.

Photoluminescence spectra of point defects in semiconductors: Validation of first-principles calculations

Optically and magnetically active point defects in semiconductors are interesting platforms for the development of solid-state quantum technologies. Their optical properties are usually probed by measuring photoluminescence spectra, which provide information on excitation energies and on the interaction of electrons with lattice vibrations. We present a combined computational and experimental study of photoluminescence spectra of defects in diamond and SiC, aimed at assessing the validity of theoretical and numerical approximations used in first principles calculations, including the use of the Franck-Condon principle and the displaced harmonic oscillator approximation. We focus on prototypical examples of solid-state qubits, the divacancy centers in SiC and the nitrogen-vacancy in diamond, and we report computed photoluminescence spectra as a function of temperature that are in very good agreement with the measured ones. As expected we find that the use of hybrid functionals leads to more accurate results than semilocal functionals. Interestingly our calculations show that constrained density functional theory (CDFT) and time-dependent hybrid DFT perform equally well in describing the excited state potential energy surface of triplet states; our findings indicate that CDFT, a relatively cheap computational approach, is sufficiently accurate for the calculations of photoluminescence spectra of the defects studied here. Finally, we find that only by correcting for finite-size effects and extrapolating to the dilute limit, one can obtain a good agreement between theory and experiment. Our results provide a detailed validation protocol of first principles calculations of photoluminescence spectra, necessary both for the interpretation of experiments and for robust predictions of the electronic properties of point defects in semiconductors.

Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines.

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of D = 3.6 GHz, manifesting an optically induced population inversion of the ground state spin sublevels. These observations are the signatures of the centers and demonstrate that electron irradiation can be reliably used to create these centers in hBN. Exploration of the spin resonance line shape allowed us to establish the source of the line broadening, which occurs due to the slight deviation in orientation of the two-dimensional B-N atomic plains being exactly parallel relative to each other. The results of the analysis of the broadening mechanism can be used for the crystalline quality control of the 2D materials, using the spin embedded in the hBN as a probe.

Single Ion Implantation of Bismuth

Ion Implantation In article number 2000237 by Nathan Cassidy, Roger Webb, David Cox, and co-workers, preliminary results are presented from the first commercially produced implanter specifically designed for rapid and precise positioning of single ions into device structures for solid state quantum technology applications. Specifically the implantation of single bismuth ions into Si, Ge, Cu, and Au are reported, and the counting detection efficiency for single ion implants and the factors that affect such detection efficiencies are determined.

Photonic-Crystal Josephson Traveling-Wave Parametric Amplifier

An amplifier combining noise performances as close as possible to the quantum limit with large bandwidth and high saturation power is highly desirable for many solid state quantum technologies such as high fidelity qubit readout or high sensitivity electron spin resonance for example. Here we introduce a new Traveling Wave Parametric Amplifier based on Superconducting QUantum Interference Devices. It displays a 3 GHz bandwidth, a -102 dBm 1-dB compression point and added noise near the quantum limit. Compared to previous state-of-the-art, it is an order of magnitude more compact, its characteristic impedance is in-situ tunable and its fabrication process requires only two lithography steps. The key is the engineering of a gap in the dispersion relation of the transmission line. This is obtained using a periodic modulation of the SQUID size, similarly to what is done with photonic crystals. Moreover, we provide a new theoretical treatment to describe the non-trivial interplay between non-linearity and such periodicity. Our approach provides a path to co-integration with other quantum devices such as qubits given the low footprint and easy fabrication of our amplifier.

Photolithographic Patterning of Organic Color-Centers.

Organic color-centers (OCCs) have emerged as promising single-photon emitters for solid-state quantum technologies, chemically specific sensing, and near-infrared bioimaging. However, these quantum light sources are currently synthesized in bulk solution, lacking the spatial control required for on-chip integration. The ability to pattern OCCs on solid substrates with high spatial precision and molecularly defined structure is essential to interface electronics and advance their quantum applications. Herein, a lithographic generation of OCCs on solid-state semiconducting single-walled carbon nanotube films at spatially defined locations is presented. By using light-driven diazoether chemistry, it is possible to directly pattern p-nitroaryl OCCs, which demonstrate chemically specific spectral signatures at programmed positions as confirmed by Raman mapping and hyperspectral photoluminescence imaging. This light-driven technique enables the fabrication of OCC arrays on solid films that fluoresce in the shortwave infrared and presents an important step toward the direct writing of quantum emitters and other functionalities at the molecular level.

Colour centre generation in diamond for quantum technologies

Abstract Effective methods to generate colour centres in diamond and other wide band-gap materials are essential to the realisation of solid state quantum technologies based on such systems. Such methods have been the subject of intensive research effort in recent years. In this review, we bring together the various techniques used in the generation and positioning of colour centres in diamond: ion implantation, delta-doping, electron irradiation, laser writing and thermal annealing. We assess the roles and merits of each of these techniques in the formation of colour centres for different quantum technologies and consider future combinations of the techniques to meet the requirements of the most demanding applications.

Emerging rare-earth doped material platforms for quantum nanophotonics

Abstract Rare-earth dopants are arguably one of the most studied optical centers in solids, with applications spanning from laser optoelectronics, biosensing, lighting to displays. Nevertheless, harnessing rare-earth dopants’ extraordinary coherence properties for quantum information technologies is a relatively new endeavor, and has been rapidly advancing in recent years. Leveraging the state-of-the-art photonic technologies, on-chip rare-earth quantum devices functioning as quantum memories, single photon sources and transducers have emerged, often with potential performances unrivaled by other solid-state quantum technologies. These existing quantum devices, however, nearly exclusively rely on macroscopic bulk materials as substrates, which may limit future scalability and functionalities of such quantum systems. Thus, the development of new platforms beyond single crystal bulk materials has become an interesting approach. In this review article, we summarize the latest progress towards nanoscale, low-dimensional rare-earth doped materials for enabling next generation rare-earth quantum devices. Different platforms with a variety of synthesis methods are surveyed. Their key metrics measured to date are presented and compared. Special attention is placed on the connection between the topology of each platform to its target device applications. Lastly, an outlook for near term prospects of these platforms are given, with a hope to spur broader interests in rare-earth doped materials as a promising candidate for quantum information technologies.

Noise threshold for a fault-tolerant two-dimensional lattice architecture

We consider a model of quantum computation in which the set of operations is limited to nearest-neighbor interactions on a 2D lattice. We model movement of qubits with noisy SWAP operations. For this architecture we design a fault-tolerant coding scheme using the concatenated [7, 1, 3] Steane code. Our scheme is potentially applicable to ion-trap and solid-state quantum technologies. We calculate a lower bound on the noise threshold for our local model using a detailed failure probability analysis. We obtain a threshold of 1.85×10-5 for the local setting, where memory error rates are one-tenth of the failure rates of gates, measurement, and preparation steps. For the analogous nonlocal setting, we obtain a noise threshold of 3.61 × 10-5. Our results thus show that the additional SWAP operations required to move qubits in the local model affect the noise threshold only moderately.