Abstract Solid-state organic-inorganic halide perovskite solar cells have attracted increasing interest due to their potential as high-efficiency, low-cost photovoltaic devices. In this study, we comprehensively simulate CH₃NH₃PbI₃ perovskite-based solar cells with CuFeO₂ as the hole transport material (HTM) layer, and compare them to cells using Spiro-OMETAD and Cu₂O as HTM layers, utilizing SCAPS-1D software. The effects of absorber thickness, back contact work function, CuFeO₂ thickness, acceptor concentration, and defect density at the CH₃NH₃PbI₃/CuFeO₂ interface are analyzed. The results indicate that delafossite CuFeO₂ is a promising HTM that could significantly enhance the performance of perovskite-based solar cells. TiO₂/CH₃NH₃PbI₃/CuFeO₂ solar cells demonstrate comparable photovoltaic performance to those using traditional Spiro-OMETAD when the back contact electrode work function exceeds 4.9 eV, and superior performance compared to those with Cu₂O and Spiro-OMETAD at work functions below 4.8 eV. A high acceptor concentration exceeding 10¹⁶ cm⁻³ in CuFeO₂ is recommended to achieve optimal photovoltaic performance. These simulation results highlight the significant potential of employing CuFeO₂ as an HTM layer in CH₃NH₃PbI₃ perovskite-based solar cells as an alternative to the organic Spiro-OMETAD.