Two-inch and 3-inch diameter S-doped dislocation-free (DF) (Dislocation density < 500/cm2) InP crystals were grown by the differently modified liquid-encapsulated Czochralski (LEC) method. Two-inch-diameter InP crystals were grown by the double thermal baffle method (DTB) and 3-inch-diameter crystals were grown by the phosphorus vapor controlled LEC method (PC-LEC). The DF S-doped InP crystals become somewhat rectangular in shape and the faceting on the body of the ingots takes place during the growth. The length of the edge facets in DF crystals is much longer than that of the Sn-doped InP crystals of which EPD is relatively high. We think that the difference in facet length can be explained by the difference in supercooling. To grow the DF single crystals, it is necessary to use the stoichiometric polycrystals without certain specific impurities.