Small Spectral Linewidth Research Articles

16.3 W Peak-Power Pulsed All-Diode Laser Based Multi-Wavelength Master-Oscillator Power-Amplifier System at 964 nm

An all-diode laser-based master oscillator power amplifier (MOPA) configuration for the generation of ns-pulses with high peak power, stable wavelength and small spectral line width is presented. The MOPA emits alternating at two wavelengths in the spectral range between 964 nm and 968 nm, suitable for the detection of water vapor by absorption spectroscopy. The monolithic master oscillator (MO) consists of two slightly detuned distributed feedback laser branches, whose emission is combined in a Y-coupler. The two emission wavelengths can be adjusted by varying the current or temperature to an absorption line and to a non-absorbing region. The power amplifier (PA) consists of a ridge-waveguide (RW) section and a tapered section, monolithically integrated within one chip. The RW section of the PA acts as an optical gate and converts the continuous wave input beam emitted by the MO into a sequence of short optical pulses, which are subsequently amplified by the tapered section to boost the output power. For a pulse width of 8 ns, a peak power of 16.3 W and a side mode suppression ratio of more than 37 dB are achieved at a repetition rate of 25 kHz. The measured spectral width of 10 pm, i.e., 0.1 cm−1, is limited by the resolution of the optical spectrum analyzer. The generated pulses emitting alternating at two wavelengths can be utilized in a differential absorption light detection and ranging system.

Monolithic Integrated Semiconductor Optical Amplifier With Broad Spectrum, High Power, and Small Linewidth Expansion

Semiconductor optical amplifiers (SOAs) offer direct electrical injection, power consumption, integration, and anti-radiation advantages over optical fiber amplifiers. However, saturation output power and gain bandwidth have been limited in traditional structure SOAs. We demonstrate a monolithic integrated SOA with broad spectrum, high power, high gain, and small spectral linewidth expansion. The device adopts a two-stage amplified large optical cavity structure, and a lower optical field confinement factor is obtained by adjusting the thickness of the waveguide layer. The lower optical field confinement factor is conducive to improving the coupling efficiency and the maximum output power. Our device, fabricated only by standard i-line lithography with micron-scale precision, obtains excellent and stable performance. When the input power is set to 1 mW, the output power is 419 mW with a gain of 26.23 dB. When the input power is set to 25 mW at 25 °C, the output power increases to 600 mW with a gain of 13.8 dB. The corresponding gain bandwidth of 3 dB measures at least 70 nm. The spectral linewidth after the SOA is 1.15 times wider than that of the seed laser.

布拉格反射波导激光器的光谱特性

The continuous-wave single-mode operation of edge-emitting diode laser based on dual-sided non-quarter-wave Bragg reflection waveguide (BRW) was demonstrated at room temperature. A low-index core was utilized in the laser. The ridge BRW lasers (BRLs) exhibited an ultra-narrow twin-beam output. Single longitudinal mode emission with a very small spectral linewidth of 0.052 nm was measured. The lasing spectra showed a periodic modulation in the envelope with a mode spacing of approximately 3.3 nm. When the injection current of the BRLs was beyond 300 mA, a large mode hopping of the emission wavelength was observed.

High-power distributed Bragg reflector ridge-waveguide diode laser with very small spectral linewidth

We manufactured and investigated distributed Bragg reflector ridge-waveguide diode lasers having sixth-order surface gratings and an emission wavelength around 974 nm. The single-mode output power of the lasers with a total length of 4 mm exceeded 1 W. A very small spectral linewidth of 1.4 MHz (3 dB) consisting of a Lorentzian part of 146 kHz and a Gaussian part of 1308 MHz was measured using a self-delayed heterodyne measurement technique.

High-power 894 nm monolithic distributed-feedback laser

A ridge-waveguide InGaAs/GaAsP laser, emitting up to 250 mW in a single lateral and longitudinal mode at a wavelength of 894 nm, is presented. The distributed feedback is provided by a second order grating, formed into an InGaP/GaAs/InGaP multilayer structure. Owing to the stable lasing frequency, the large side mode suppression ratio (> 40 dB) and small spectral line width (< 200 kHz) the diode laser is well suited for caesium D1 spectroscopy. This was verified by the measurement of the hyperfine structure of the D1 line.

On the Populations of Neon Levels in the Low Temperature Plasma of a Hollow Cathode Discharge

Abstract Atomic levels population measurements constitute an essential contribution to various aspects of plasma research: balance and cross-section of inelastic processes, admixtures effects on level excitation mechanism, purposeful optimisation of plasma parameters etc. Atomic level populations in the negative glow of a hollow cathode discharge are of utmost interest in view of the peculiarities of the spectral source: a rich spectrum consisting of gas lines, lines of the cathode material and also lines of the substances introduced in the discharge; intensive atomic and ionic lines of high excitation potentials; small spectral linewidth, convenient for analytical purposes.

A nonpeak mode of radiation generation and amplification for a neodymium laser with a small spectral line width

A nonpeak mode of radiation generation and amplification for a neodymium laser with a small spectral line width