Skyrmion Racetrack Memory Research Articles

Toward Write Optimization for Skyrmion Racetrack Memory by Skyrmion Repermutation

Toward Write Optimization for Skyrmion Racetrack Memory by Skyrmion Repermutation

Antiferromagnetic interlayer exchange coupled Co68B32/Ir/Pt multilayers

Synthetic antiferromagnetic structures can exhibit the advantages of high velocity similarly to antiferromagnets with the additional benefit of being imaged and read-out through techniques applied to ferromagnets. Here, we explore the potential and limits of synthetic antiferromagnets to uncover ways to harness their valuable properties for applications. Two synthetic antiferromagnetic systems have been engineered and systematically investigated to provide an informed basis for creating devices with maximum potential for data storage, logic devices, and skyrmion racetrack memories. The two systems considered are (system 1) CoB/Ir/Pt of N repetitions with Ir inducing the negative coupling between the ferromagnetic layers and (system 2) two ferromagnetically coupled multilayers of CoB/Ir/Pt, coupled together antiferromagnetically with an Ir layer. From the hysteresis, it is found that system 1 shows stable antiferromagnetic interlayer exchange coupling between each magnetic layer up to N = 7. Using Kerr imaging, the two ferromagnetic multilayers in system 2 are shown to undergo separate maze-like switches during hysteresis. Both systems are also studied as a function of temperature and show different behaviors. Micromagnetic simulations predict that in both systems the skyrmion Hall angle is suppressed with the skyrmion velocity five times higher in system 1 than system 2.

All-Electrical 9-Bit Skyrmion-Based Racetrack Memory Designed with Laser Irradiation.

Racetrack memories with magnetic skyrmions have recently been proposed as a promising storage technology. To be appealing, several challenges must still be faced for the deterministic generation of skyrmions, their high-fidelity transfer, and accurate reading. Here, we realize the first proof-of-concept of a 9-bit skyrmion racetrack memory with all-electrical controllable functionalities implemented in the same device. The key ingredient is the generation of a tailored nonuniform distribution of magnetic anisotropy via laser irradiation in order to (i) create a well-defined skyrmion nucleation center, (ii) define the memory cells hosting the information coded as the presence/absence of skyrmions, and (iii) improve the signal-to-noise ratio of anomalous Hall resistance measurements. This work introduces a strategy to unify previous findings and predictions for the development of a generation of racetrack memories with robust control of skyrmion nucleation and position, as well as effective skyrmion electrical detection.

Outside Back Cover: Volume 2 Issue 2

Interdisciplinary MaterialsVolume 2, Issue 2 p. iii-iii COVER IMAGEOpen Access Outside Back Cover: Volume 2 Issue 2 First published: 20 March 2023 https://doi.org/10.1002/idm2.12083AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract Outside Back Cover: Magnetic skyrmions are particle-like magnetic nanostructures with spins varying continuously from core to edges, which can be found in a large number of materials. Their topological nature results in exotic properties and easy controllability via electric and optical methods, making them emerging candidates as information carriers in spintronic devices like skyrmion racetrack memory and skyrmion logic gates as well as in artificial neural networks. Volume2, Issue2March 2023Pages iii-iii RelatedInformation

Trapping and manipulating skyrmions in two-dimensional films by surface acoustic waves

Skyrmions, topologically stable spin structures with particle-like properties, are promising for spintronics applications such as skyrmion racetrack memory. Though reliable control of skyrmion motion is essential for the operation of spintronics devices, the straight motion of skyrmions along the driving force is in general difficult due to an inevitable transverse force originating from their topology. Here, we propose a method of precise manipulation of skyrmions based on surface acoustic waves (SAWs) propagating in two dimensions. Using two standing SAWs, saddle-shape local potentials like quadrupole ion traps are created to trap skyrmions robustly. Furthermore, by tuning the frequencies of the SAWs, we show that trapped skyrmions not only move in straight lines but also move precisely in any direction in a two-dimensional thin film. These results could be helpful for the future design of spintronics devices based on skyrmions.

Sky-Sorter: A Processing-in-Memory Architecture for Large-Scale Sorting

Sorting is one of the most important algorithms in computer science. Conventional CPUs, GPUs, FPGAs, and ASICs running sorting are fundamentally bottlenecked by the off-chip memory bandwidth, because of their von-Neumann architecture. Processing-near-memory (PNM) designs integrate a CPU, a GPU or an ASIC upon an HBM for sorting, but their sorting throughput are still limited by the HBM bandwidth and capacity. In this paper, we propose a skyrmion racetrack memory (SRM) -based PIM accelerator, <i>Sky-Sorter</i> , to enhance the sorting performance of large-scale datasets. Sky-Sorter implements samplesort which involves four steps, sampling, splitting marker sorting, partitioning, and bucket sorting. An SRM-based random number generator (TRNG) is used in Sky-Sorter to randomly sample records from the dataset. Sky-Sorter divides the large dataset into many buckets based on sampled splitting markers by our proposed SRM-based partitioner. Its partitioning throughput matches the off-chip memory bandwidth. We further designed an SRM-based sorting unit (SU) to sort all records of a bucket without introducing extra CMOS logic. Our SU uses the fast in-cell insertion characteristics of SRMs to implement and perform insertsort within a bucket. Sky-Sorter employs SUs to sort all buckets simultaneously by fully utilizing large internal array bandwidth. Compared to state-of-the-art accelerators, Sky-Sorter improves the throughput per Watt by <inline-formula><tex-math notation="LaTeX">$\sim 4\times$</tex-math></inline-formula> .

Granularity-Driven Management for Reliable and Efficient Skyrmion Racetrack Memories

Skyrmion racetrack memory is a rising star of nonvolatile memories due to its outstanding access performance and storage density. However, the working principle of skyrmion racetrack memory introduces unique issues, such as the position error and data representation problem, which considerably impact the data reliability. Although brilliant error correction codes have been proposed to detect and correct bit errors, however, their time-consuming encoding and decoding processes cannot fully match the nanosecond-level access latency of skyrmion racetrack memory. Observing the dilemma among data reliability, access performance, and space utilization, we propose a granularity-driven management scheme for skyrmion racetrack memory. While eliminating the errors incurred due to the position error and data representation problem, the proposed management scheme aims to jointly optimize access performance and space utilization. To achieve this goal, the proposed scheme adaptively selects different combinations of data encoding, layout, and indexing schemes for the data of different granularities. Moreover, we investigate the port selection problem under our proposed data layouts to minimize shift overheads on data accesses. Through analytical and experimental studies, the proposed management scheme is evaluated, and the obtained results are quite encouraging.

When B-Tree Meets Skyrmion Memory: How Skyrmion Memory Affects an Indexing Scheme

Because of large cell density, fast read/write performance, and no limited write cycles, magnetic skyrmion racetrack memory (SK-RM) has been regarded as the next-generation main memory technology. However, the characteristics of SK-RM are not friendly for a B+-tree indexing structure that is widely applied to database and file systems because some B+-tree structure’s operations (including splitting, merging, and query) need to reproduce skyrmion elements for copying keys and repeatedly shift skyrmion elements to access ports for a binary search operation. In this work, we elaborate on the overheads of establishing a B+-tree structure on the SK-RM architecture. To eliminate the overhead, this work proposes a skyrmion-friendly B+-tree structure, namely Sky-tree, that fully exploits the benefits of the SK-RM architecture by a bit-level binary search method, node-based skyrmion recycler, and an intratrack node splitting strategy. The design principle of the skyrmion-friendly B+-tree is to minimize the number of generated skyrmion elements and the shift overhead per query operation. The experimental results show that our skyrmion-friendly B+-tree structure can improve the performance by up to 78%, compared with a baseline solution.

Zero-Field Nucleation and Fast Motion of Skyrmions Induced by Nanosecond Current Pulses in a Ferrimagnetic Thin Film.

Skyrmion racetrack memories are highly attractive for next-generation data storage technologies. Skyrmions are noncollinear spin textures stabilized by chiral interactions. To achieve a fast-operating memory device, it is critical to move skyrmions at high speeds. The skyrmion dynamics induced by spin-orbit torques (SOTs) in the commonly studied ferromagnetic films is hindered by strong pinning effects and a large skyrmion Hall effect causing deflection of the skyrmion toward the racetrack edge, which can lead to information loss. Here, we investigate the current-induced nucleation and motion of skyrmions in ferrimagnetic Pt/CoGd/(W or Ta) thin films. We first reveal field-free skyrmion nucleation mediated by Joule heating. We then achieve fast skyrmion motion driven by SOTs with velocities as high as 610 m s-1 and a small skyrmion Hall angle |θSkHE| ≲ 3°. Our results show that ferrimagnets are better candidates for fast skyrmion-based memory devices with low risk of information loss.

A skyrmion content-addressable cell for skyrmion magnetic memories

Content-addressable memories (CAMs) allow searching a pattern, processing in parallel all the data stored. Beyond-CMOS technologies can provide new opportunities to improve CAM memories implementations both at the device and architectural level. In this article, we propose a ternary content-addressable memory cell based on skyrmion technology. The proposed memory cell is based on skyrmion racetrack memory. The cell is able to signal if the bit contained in the cell in form of skyrmion corresponds to an electrical input, the target of the search operation. The proposed design, verified by means of micromagnetic simulations, has an area of 0.054 μm2 and can perform a search operation in 3.3 ns with an energy of 10.5 fJ. The operation performed is non-destructive and does not require conversion between the magnetic and the electronic domains. For this reason, the designed cell has the potential to be used as a basic block for non-volatile CAM memories. Here, we propose also a layout structure to implement a CAM memory employing the proposed cell. This structure allows to achieve memory density comparable to traditional racetrack memories and execute at the same time CAM operations.

Electrical Generation and Deletion of Magnetic Skyrmion‐Bubbles via Vertical Current Injection (Adv. Mater. 45/2021)

Skyrmion Generation/Deletion The generation/deletion of magnetic skyrmions at a specific area on a device is the most demanding issue in skyrmionics. In article number 2104406, Chanyong Hwang and co-workers introduce a recipe for magnetic skyrmion generation/deletion. A vertically injected current pulse induces skyrmion generation/deletion one by one depending on the polarity. Using this vertical-current concept with a spin–orbit-torque-driven skyrmion shifting, a proof-of-concept demonstration of skyrmion racetrack memory is presented.

Electrical Generation and Deletion of Magnetic Skyrmion-Bubbles via Vertical Current Injection.

The magnetic skyrmion is a topologically protected spin texture that has attracted much attention as a promising information carrier because of its distinct features of suitability for high-density storage, low power consumption, and stability. One of the skyrmion devices proposed so far is the skyrmion racetrack memory, which is the skyrmion version of the domain-wall racetrack memory. For application in devices, skyrmion racetrack memory requires electrical generation, deletion, and displacement of isolated skyrmions. Despite the progress in experimental demonstrations of skyrmion generation, deletion, and displacement, these three operations have yet to be realized in one device. Here, a route for generating and deleting isolated skyrmion-bubbles through vertical current injection with an explanation of its microscopic origin is presented. By combining the proposed skyrmion-bubble generation/deletion method with the spin-orbit-torque-driven skyrmion shift, a proof-of-concept experimental demonstration of the skyrmion racetrack memory operation in a three-terminal device structure is provided.

Roadmap of Spin–Orbit Torques

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

Nanoscale Materials for State-of-the-Art Magnetic Memory Technologies

The review deals with different materials science aspects of state-of-the-art magnetic memory technologies, such as magnetoresistive random-access memory (MRAM), antiferromagnetic (AFM) memory, and skyrmion racetrack memory. Particularly, the materials with high perpendicular magnetic anisotropy (PMA), such as CoFeB, L10-ordered Mn- and Fe-based alloys, are considered (Sec. 1) regarding their applications in MRAM technology. Furthermore, studies of AFM alloys, such as FeRh, CuMnAs, Mn2Au, are reviewed (Sec. 2) with an emphasis on the application of these materials in AFM-memory technology. Finally, the last (3rd) section of the review is concerning materials that could be used in skyrmion racetrack memory.

Roadmap of spin-orbit torques.

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers, such as magnetic insulators, antiferromagnets, and ferrimagnets. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

Magnetic Direct-Write Skyrmion Nanolithography.

Magnetic skyrmions are stable spin textures with quasi-particle behavior and attract significant interest in fundamental and applied physics. The metastability of magnetic skyrmions at zero magnetic field is particularly important to enable, for instance, a skyrmion racetrack memory. Here, the results of the nucleation of stable skyrmions and formation of ordered skyrmion lattices by magnetic force microscopy in (Pt/CoFeSiB/W)n multilayers, exploiting the additive effect of the interfacial Dzyaloshinskii-Moriya interaction, are presented. The appropriate conditions under which skyrmion lattices are confined with a dense two-dimensional liquid phase are identified. A crucial parameter to control the skyrmion lattice characteristics and the number of scans resulting in the complete formation of a skyrmion lattice is the distance between two adjacent scanning lines of a magnetic force microscopy probe. The creation of skyrmion patterns with complex geometry is demonstrated, and the physical mechanism of direct magnetic writing of skyrmions is comprehended by micromagnetic simulations. This study shows a potential of a direct-write (maskless) skyrmion (topological) nanolithography with sub-100 nm resolution, where each skyrmion acts as a pixel in the final topological image.

Skyrmion racetrack memory with an antidot

Skyrmion racetrack memory has a lot of potential in future non-volatile solid state devices. By application of current in such devices, both spin-orbit torque and spin-transfer torques are proven to be useful to nucleate and propagate skyrmions. However, the current applied during nucleation of successive skyrmions may have unwanted perturbation viz. Joule heating and the skyrmion Hall effect, on the propagation of previously generated skyrmions. Therefore, new methodology is desired to decouple the generation and propagation of skyrmions. Here, we present a novel route via micromagnetic simulations for generation of skyrmions from triangular antidot structure in a ferromagnetic nanotrack using local Oersted field. Antidots are holes in a magnetic nanoelement. Multiple skyrmions can be simultaneously generated by incorporating a greater number of antidots. Controlled skyrmion injection can be achieved by tuning the separation between the antidots that are placed at either end of the nanotrack. Here, we propose a novel design to realise skyrmionic racetrcak memory, where one can individually generate and manipulate the skyrmions within the nanotrack.

Shift-Limited Sort: Optimizing Sorting Performance on Skyrmion Memory-Based Systems

Modern nonvolatile memories (NVMs) are widely recognized as energy-efficient replacements of classical memory/storage media, such as SRAM, DRAM, and mechanical hard disk. Among the popular NVMs, the skyrmion racetrack memory (SK-RM) is well known for its high storage density and unique supports of insert/delete operations. However, the existing algorithms designed for classical media might experience serious performance degradation when working on the SK-RM, due to the distinct characteristics of SK-RM. Thus, the existing algorithms should be redesigned to adapt to the brand-new memory model based on the SK-RM, so as to fully reveal the potentials of SK-RM. In particular, many existing algorithms tend to access the in-memory data in a random-hopping fashion, which generates many time-consuming shift operations of SK-RM. It is therefore crucial for the existing algorithms to eliminate unnecessary shift operations of SK-RM to boost the performance of the algorithms. In many modern applications, such as multimedia and data analysis, it is a common operation to process two or more arrays/vectors of data to perform certain computation tasks. In the arrays/vectors, an appropriate data placement strategy is critical for avoiding unnecessary shift operations of SK-RM. The observation thus motivates this work in proposing a recursive back-to-back data placement manner to effectively reduces the shift operations of SK-RM. To demonstrate the back-to-back data placement, we take sorting algorithms as a case study, and propose a novel shift-limited sorting algorithm for SK-RM. Analytical studies show that the shift-limited sort effectively enhances the time complexity of classical merge sort from O(dn lg n) to O(n lg n), where d is the bit distance between adjacent access ports on the nanotracks of the SK-RM. After that, the efficacy of the proposed shift-limited sort is then verified by experimental studies, where the results are encouraging.

Stochastic Computing Implemented by Skyrmionic Logic Devices

Magnetic skyrmion, topologically non-trivial spin texture, has been considered as promising information carrier in future electronic devices because of its nanoscale size, low depinning current density and high motion velocity. Despite the broad interests in skyrmion racetrack memory, researchers have been recently exploiting logic functions enabled by using the particle-like behaviors of skyrmions. These functions can be applied to unconventional computing, such as stochastic computing (SC), which treats data as probabilities and is superior to binary computing due to its simplicity of logic operation. In this work, we demonstrate SC implemented by skyrmionic logic devices. We propose a skyrmionic AND-OR logic device as a multiplier in the stochastic domain and two skyrmionic multiplexer (MUX) logic devices as stochastic adders. With the assist of voltage controlled magnetic anisotropy (VCMA), the precise control of skyrmions collision is not required in the skyrmionic AND-OR logic device, thus improving the operation robustness. In the two MUX logic devices, skyrmions can be driven by Zhang-Li torque or spin orbit torque (SOT). Particularly, we can flexibly regulate the skyrmion motion by VCMA or voltage controlled Dzyaloshinskii-Moriya Interaction (VCDMI) in the SOT case. Furthermore, 3-bit stochastic multiplier and adder are demonstrated by micromagnetic simulations. In addition, simulations in synthetic antiferromagnets (SAF) show that the performance of our skyrmionic logic gates can be optimized through advanced materials. Our work opens up perspective to implement SC using skyrmionic logic devices.

Voltage-Driven High-Speed Skyrmion Motion in a Skyrmion-Shift Device

Magnetic skyrmions are promising information carriers for building future high-density and high-speed spintronic devices. However, to achieve a current-driven high-speed skyrmion motion, the required driving current density is usually very large, which could be energy inefficient and even destroy the device due to Joule heating. Here, we propose a voltage-driven skyrmion motion approach in a skyrmion shift device made of magnetic nanowires. The high-speed skyrmion motion is realized by utilizing the voltage shift, and the average skyrmion velocity reaches up to 259 m/s under 0.45 V applied voltage. In comparison with the widely studied vertical current-driven model, the energy dissipation is three orders of magnitude lower in our voltage-driven model, for the same speed motion of skyrmions. Our approach uncovers valuable opportunities for building skyrmion racetrack memories and logic devices with both ultra-low power consumption and ultra-high processing speed, which are appealing features for future spintronic applications.