Single Self-assembled Quantum Dot Research Articles

Reproduction of single-to-double hysteresis transition of nuclear spin polarization in a single InAlAs quantum dot

We have observed a transition from single to double hysteresis of nuclear spin polarization (NSP) with increasing magnetic field in a single InAlAs self-assembled quantum dot, which means the birth of a third stable branch that depends on the field strength. This NSP transition behavior could not be reproduced by standard model calculations using a fixed electron–nuclear spin correlation time τc under different external field conditions. By introducing the field dependence of τc, we were able to successfully reproduce the observed NSP transition. This finding on the phenomenological description of the magnetic field dependence will be a future highlight of τc.

Auger and spin dynamics in a self-assembled quantum dot

The Zeeman-split spin states of a single quantum dot can be used together with its optical trion transitions to form a spin–photon interface between a stationary (the spin) and a flying (the photon) quantum bit. In addition to long coherence times of the spin state itself, the limiting decoherence mechanisms of the trion states are of central importance. Here, we investigate in time-resolved resonance fluorescence the electron spin and trion dynamics in a single self-assembled quantum dot in an applied magnetic field of up to B=10 T. The quantum dot is only weakly coupled to an electron reservoir with tunneling rates of about 1ms−1. Using this sample structure, we can measure, in addition to the spin-flip rate of the electron and the spin-flip Raman rate of the trion transition, the Auger recombination process that scatters an Auger electron into the conduction band. The Auger effect destroys the radiative trion transition and leaves the quantum dot empty until an electron tunnels from the reservoir into the dot. The combination of an Auger recombination event with subsequent electron tunneling from the reservoir can flip the electron spin and thus constitutes another mechanism that limits the spin lifetime.

Internal photoeffect from a single quantum emitter

We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically generated emission rate on the excitation intensity and use a rate equation model to deduce the involved rates. The emission rate is tunable over several orders of magnitude by adjusting the excitation intensity. Our findings show that a process that is well known in single atom spectroscopy (i.e. photo ionization) can also be observed in the solid state. The results also quantify an important, but mostly neglected, mechanism that may fundamentally limit the coherence times in solid-state quantum optical devices.

Deterministic positioning of nanophotonic waveguides around single self-assembled quantum dots

The capability to embed self-assembled quantum dots (QDs) at predefined positions in nanophotonic structures is key to the development of complex quantum photonic architectures. Here, we demonstrate that QDs can be deterministically positioned in nanophotonic waveguides by pre-locating QDs relative to a global reference frame using micro-photoluminescence ($\mu$PL) spectroscopy. After nanofabrication, $\mu$PL images reveal misalignments between the central axis of the waveguide and the embedded QD of only $(9\pm46$) nm and $(1\pm33$) nm, for QDs embedded in undoped and doped membranes, respectively. A priori knowledge of the QD positions allows us to study the spectral changes introduced by nanofabrication. We record average spectral shifts ranging from 0.1 to 1.1 nm, indicating that the fabrication-induced shifts can generally be compensated by electrical or thermal tuning of the QDs. Finally, we quantify the effects of the nanofabrication on the polarizability, the permanent dipole moment and the emission frequency at vanishing electric field of different QD charge states, finding that these changes are constant down to QD-surface separations of only 70 nm. Consequently, our approach deterministically integrates QDs into nanophotonic waveguides whose light-fields contain nanoscale structure and whose group index varies at the nanometer level.

Real-Time Detection of Single Auger Recombination Events in a Self-Assembled Quantum Dot.

Auger recombination is a nonradiative process, where the recombination energy of an electron-hole pair is transferred to a third charge carrier. It is a common effect in colloidal quantum dots that quenches the radiative emission with an Auger recombination time below nanoseconds. In self-assembled QDs, the Auger recombination has been observed with a much longer recombination time on the order of microseconds. Here, we use two-color laser excitation on the exciton and trion transition in resonance fluorescence on a single self-assembled quantum dot to monitor in real-time single quantum events of the Auger process. Full counting statistics on the random telegraph signal give access to the cumulants and demonstrate the tunability of the Fano factor from a Poissonian to a sub-Poissonian distribution by Auger-mediated electron emission from the dot. Therefore, the Auger process can be used to tune optically the charge carrier occupation of the dot by the incident laser intensity, independently from the electron tunneling from the reservoir by the gate voltage. Our findings are not only highly relevant for the understanding of the Auger process but also demonstrate the perspective of the Auger effect for controlling precisely the charge state in a quantum system by optical means.

Contrast of 83% in reflection measurements on a single quantum dot

We report on a high optical contrast between the photon emission from a single self-assembled quantum dot (QD) and the back-scattered excitation laser light. In an optimized semiconductor heterostructure with an epitaxially grown gate, an optically-matched layer structure and a distributed Bragg reflector, a record value of 83% is obtained; with tilted laser excitation even 885%. This enables measurements on a single dot without lock-in technique or suppression of the laser background by cross-polarization. These findings open up the possibility to perform simultaneously time-resolved and polarization-dependent resonant optical spectroscopy on a single quantum dot.

Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots

Single layer self-assembled InGaAs quantum dots (QDs) are manipulated by using different arsenic species on GaAs (100) surface. The As4 molecules are experimentally observed to be more promising than As2 to promote the formation of one-dimensionally-aligned QD-chain arrays. The lateral alignment of QDs and the corresponding formation of dot chains are explained by the anisotropic surface kinetics in combination with the different reactivities of the two molecules with bonding sites on the GaAs (100) surface. Photoluminescence (PL) measurements demonstrate that the spectra of the QD-chains broaden to higher energy and increases in intensity with increasing excitation laser power. The PL band of the QD-chains also exhibits a 9 meV reduction in linewidth as temperature increases starting from 8 K. These observations confirm an efficient lateral coupling between neighboring QDs and thereafter polarized QD emission, whereas the randomly distributed QDs grown with As2 show no preferential polarization. Such QD-chains exhibiting anisotropic properties have the potential for nanophotonics applications like electro-optic modulators with very low drive voltage and ultra-wide bandwidth operation.

Quadrupolar effect on nuclear spin depolarization in single self-assembled quantum dots

We investigate the nuclear spin polarization in single self-assembled InAlAs quantum dots under magnetic fields that are sufficiently weak to make the impacts of the quadrupole interaction apparent. The nuclear spin depolarization rate decreases as the magnitude of the applied longitudinal magnetic field increases. This trend can be explained by the dissolution of quadrupolar mixing that is coupled to the temporal fluctuations of the hyperfine interaction. In addition, the optically injected electron spin generates a considerable Overhauser field under a wide range of experimental conditions. These findings are important for nuclear spin engineering and electron spin manipulation in self-assembled III–V semiconductor quantum dots.

In-plane nuclear field formation investigated in single self-assembled quantum dots

We studied the formation mechanism of the in-plane nuclear field in single self-assembled In$_{0.75}$Al$_{0.25}$As/Al$_{0.3}$Ga$_{0.7}$As quantum dots. The Hanle curves with an anomalously large width and hysteretic behavior at the critical transverse magnetic field were observed in many single quantum dots grown in the same QD sample. In order to explain the anomalies in the Hanle curve indicating the formation of a large nuclear field perpendicular to the photo-injected electron spin polarization, we propose a new model based on the current phenomenological model for dynamic nuclear spin polarization. The model includes the effects of the nuclear quadrupole interaction and the sign inversion between in-plane and out-of-plane g-factors, and the model calculations reproduce successfully the characteristics of the observed anomalies in the Hanle curves.

Electro-optic routing of photons from a single quantum dot in photonic integrated circuits

Recent breakthroughs in solid-state photonic quantum technologies enable generating and detecting single photons with near-unity efficiency as required for a range of photonic quantum technologies. The lack of methods to simultaneously generate and control photons within the same chip, however, has formed a main obstacle to achieving efficient multi-qubit gates and to harness the advantages of chip-scale quantum photonics. Here we propose and demonstrate an integrated voltage-controlled phase shifter based on the electro-optic effect in suspended photonic waveguides with embedded quantum emitters. The phase control allows building a compact Mach-Zehnder interferometer with two orthogonal arms, taking advantage of the anisotropic electro-optic response in gallium arsenide. Photons emitted by single self-assembled quantum dots can be actively routed into the two outputs of the interferometer. These results, together with the observed sub-microsecond response time, constitute a significant step towards chip-scale single-photon-source de-multiplexing, fiber-loop boson sampling, and linear optical quantum computing.

Emission properties of individual InAs/Al0.44Ga0.56As quantum dots

We report on micro-photoluminescence studies of InAs/AlGaAs single self-assembled quantum dots grown by molecular beam epitaxy. A variation of the exciton fine structure splitting induced by the anisotropic part of the electron-hole exchange interaction is systematically studied depending on the exciton emission energy and the insertion of a GaAs interlayer prior formation of the InAs QDs.

Narrow optical linewidths and spin pumping on charge-tunable close-to-surface self-assembled quantum dots in an ultrathin diode

We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a $162.5\,\text{nm}$ thin diode structure. The quantum dots are just $88\,\text{nm}$ from the top GaAs surface. We design and realize a p-i-n-i-n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below $2\,\mu\text{eV}$, just a factor of two above the transform limit. Clear optical spin pumping is observed in a magnetic field of $0.5\,\text{T}$ in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots -- highly coherent single photon generation, ultra-fast optical spin manipulation -- in the thin diodes required in quantum nano-photonics and nano-phononics applications.

Optical Blocking of Electron Tunneling into a Single Self-Assembled Quantum Dot.

Time-resolved resonance fluorescence (RF) is used to analyze electron tunneling between a single self-assembled quantum dot (QD) and an electron reservoir. In equilibrium, the RF intensity reflects the average electron occupation of the QD and exhibits a gate voltage dependence that is given by the Fermi distribution in the reservoir. In the time-resolved signal, however, we find that the relaxation rate for electron tunneling is, surprisingly, independent of the occupation in the charge reservoir-in contrast to results from all-electrical transport measurements. Using a master equation approach, which includes both the electron tunneling and the optical excitation or recombination, we are able to explain the experimental data by optical blocking, which also reduces the electron tunneling rate when the QD is occupied by an exciton.

Photoelectron generation and capture in the resonance fluorescence of a quantum dot

Time-resolved resonance fluorescence on a single self-assembled quantum dot (QD) is used to analyze the generation and capture of photoinduced free charge carriers. We directly observe the capture of electrons into the QD as an intensity reduction of the exciton transition. The exciton transition is quenched until the captured electron tunnels out of the dot again in the order of milliseconds. Our results demonstrate that even under resonant excitation, excited free electrons are generated and can negatively influence the optical properties of a QD.

On-chip interference of single photons from an embedded quantum dot and an external laser

In this work, we demonstrate the on-chip two-photon interference between single photons emitted by a single self-assembled InGaAs quantum dot and an external laser. The quantum dot is embedded within one arm of an air-clad directional coupler which acts as a beam-splitter for incoming light. Photons originating from an attenuated external laser are coupled to the second arm of the beam-splitter and then combined with the quantum dot photons, giving rise to two-photon quantum interference between dissimilar sources. We verify the occurrence of on-chip Hong-Ou-Mandel interference by cross-correlating the optical signal from the separate output ports of the directional coupler. This experimental approach allows us to use a classical light source (laser) to assess in a single step the overall device performance in the quantum regime and probe quantum dot photon indistinguishability on application realistic time scales.

Emission redistribution from a quantum dot-bowtie nanoantenna

We present a combined experimental and simulation study of a single self-assembled InGaAs quantum dot coupled to a nearby ($\sim 25nm$) plasmonic antenna. Micro-photoluminescence spectroscopy shows a $\sim 2.4\times$ increase of intensity, which is attributed to spatial far-field redistribution of the emission from the quantum dot-antenna system. Power-dependent studies show similar saturation powers of $2.5\mu W$ for both coupled and uncoupled quantum dot emission in polarization-resolved measurements. Moreover, time-resolved spectroscopy reveals the absence of Purcell-enhancement of the quantum dot coupled to the antenna as compared to an uncoupled dot, yielding comparable exciton lifetimes of $\tau\sim0.5ns$. This observation is supported by numerical simulations, suggesting only minor Purcell-effects of $<2\times$ for emitter-antenna separations $>25nm$. The observed increased emission from a coupled quantum dot-plasmonic antenna system is found to be in good qualitative agreement with numerical simulations and will lead to a better understanding of light-matter-coupling in such novel semiconductor-plasmonic hybrid systems

Observation of coupling between zero- and two-dimensional semiconductor systems based on anomalous diamagnetic effects

We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely large positive diamagnetic coefficient is observed when an electron in the wetting layer combines with a hole in the quantum dot; the coefficient is nearly one order of magnitude larger than that of the exciton states confined in the quantum dots. Recombination of electrons with holes in a quantum dot of the coupled system leads to an unusual negative diamagnetic effect, which is five times stronger than that in a pure quantum dot system. This effect can be attributed to the expansion of the wavefunction of remaining electrons in the wetting layer or the spread of electrons in the excited states of the quantum dot to the wetting layer after recombination. In this case, the wavefunction extent of the final states in the quantum dot plane is much larger than that of the initial states because of the absence of holes in the quantum dot to attract electrons. The properties of emitted photons that depend on the large electron wavefunction extents in the wetting layer indicate that the coupling occurs between systems of different dimensionality, which is also verified from the results obtained by applying a magnetic field in different configurations. This study paves a new way to observe hybrid states with zero- and two-dimensional structures, which could be useful for investigating the Kondo physics and implementing spin-based solid-state quantum information processing.

In situ probing and integration of single self-assembled quantum dots-in-nanowires for quantum photonics

The realization of fiber-output single photon sources is necessary for quantum photonics. Here we present in situ probing and integration of single self-assembled quantum dots (QDs)-in-nanowires. Single self-assembled AlGaAs QDs were synthesized in GaAs/AlGaAs core–shell nanowires by molecular beam epitaxy and characterized by optical excitation in both micro-PL and fiber-integrating set-up. Cascaded biexciton–exciton emission with a saturation signal of 1000 counts per second at nitrogen temperature is achieved through the fiber-integrating setup, which makes single mode fibers an ideal candidate for single photons sources and paves the way for the realization of ‘all fiber’ devices. Numerical calculations were carried out to illustrate the collection efficiency and polarized photoluminescence characteristics. Extraction efficiencies as high as 70% over a broadband emission are reported and increase by a factor of about seven in comparison with air extraction, due to the larger refractive index of the fiber core.

Terahertz intersublevel transitions in single self-assembled InAs quantum dots with variable electron numbers.

We propose a method for performing terahertz spectroscopy on nanometer (nm)-scale systems by using metal nanogap electrodes. Intersublevel transition spectra of single self-assembled InAs quantum dots (QDs) have been measured with high signal/noise ratios by using a single electron transistor geometry that consists of a QD and nanogap metal electrodes as a terahertz detector. Photocurrent distribution with respect to the Coulomb diamonds indicates that there are two mechanisms for the photocurrent generation. When the p shell was fully occupied, we observed rather simple photocurrent spectra induced by the p → d transitions. However, when the p shell was half-filled, the photocurrent spectra exhibited a markedly different behavior, which we attribute to the fluctuation in electron configuration when the empty p state is filled back from the electrodes.

Temperature-dependent Mollow triplet spectra from a single quantum dot: Rabi frequency renormalization and sideband linewidth insensitivity.

We investigate temperature-dependent resonance fluorescence spectra obtained from a single self-assembled quantum dot. A decrease of the Mollow triplet sideband splitting is observed with increasing temperature, an effect we attribute to a phonon-induced renormalization of the driven dot Rabi frequency. We also present first evidence for a nonperturbative regime of phonon coupling, in which the expected linear increase in sideband linewidth as a function of temperature is canceled by the corresponding reduction in Rabi frequency. These results indicate that dephasing in semiconductor quantum dots may be less sensitive to changes in temperature than expected from a standard weak-coupling analysis of phonon effects.