Half-bridge-level gate-oxide failure online detection is a basis of low failure rates for power converters with SiC MOSFETs. The conventional detection methods of gate-oxide failure usually invade gate driver boards or alter control strategies of power converters. A simple detection method of half-bridge-level gate-oxide failure is proposed by connecting half-bridge SiC MOSFETs and gate driver boards through the proposed circuit. The principles of the proposed circuit are solving difference between two on-state gate voltages in high-side and low-side SiC MOSFETs and solving difference between an on-state gate voltage of low-side SiC MOSFETs and a positive output voltage of low-side gate driver board. As a result, if either of the two absolute difference values is more than 10mV, the gate-oxide of half-bridge modules will be detected as failure. The half-bridge modules with gate-oxide failure can be replaced. The proposed circuit is validated by a case study on a single-phase half-bridge inverter. The proposed circuit does not invade gate driver boards and change control strategies of power converters. It can detect half-bridge gate-oxide failure caused by various working conditions.