Single Graphene Nanoribbon Research Articles

Exploring the Potential of Heteroatom-Doped Graphene Nanoribbons as a Catalyst for Oxygen Reduction

In this study, we created a series of N, S, and P-doped and co-doped carbon catalysts using a single graphene nanoribbon (GNR) matrix and thoroughly evaluated the impact of doping on ORR activity and selectivity in acidic, neutral, and alkaline conditions. The results obtained showed no significant changes in the GNR structure after the doping process, though changes were observed in the surface chemistry in view of the heteroatom insertion and oxygen depletion. Of all the dopants investigated, nitrogen (mainly in the form of pyrrolic-N and graphitic-N) was the most easily inserted and detected in the carbon matrix. The electrochemical analyses conducted showed that doping impacted the performance of the catalyst in ORR through changes in the chemical composition of the catalyst, as well as in the double-layer capacitance and electrochemically accessible surface area. In terms of selectivity, GNR doped with phosphorus and sulfur favored the 2e− ORR pathway, while nitrogen favored the 4e− ORR pathway. These findings can provide useful insights into the design of more efficient and versatile catalytic materials for ORR in different electrolyte solutions, based on functionalized carbon.

Study of the energy spectrum of a few one-dimensional and quasi one-dimensional lattices through tight binding and density functional theory

A graphene nanoribbon (GNR) is a strip of carbon atoms having sp2 hybridization. It has wide application in nanoelectronics and opto-electronics. Usual fields of application are found in field effect transistors, interconnects, logic gates, sensors, energy storage, and photovoltaics. A single unit graphene nanoribbon is a long strip of graphene rings. Such a GNR structure may be seen as two one-dimensional carbon chains that are suitable connected with bonds. We have done tight binding calculations and density functional theory simulation of carbon chains. We study the single bond and double bond one-dimensional carbon chain and the alternate bond (t1-t2), also called a bond order system in one dimension and quasi one-dimensional chain. We find evidence for the emergence of multiple gaps in the energy spectrum of these systems. We have mapped the alternate bond system to the Su–Schrieffer–Heeger model (with a small modification) in one dimension and quasi one dimension. This is the first time such a mapping has been attempted and a comprehensive theoretical and computational study of these chains has been performed.

Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect Transistors.

Bottom-up synthesized graphene nanoribbons (GNRs) are increasingly attracting interest due to their atomically controlled structure and customizable physical properties. In recent years, a range of GNR-based field-effect transistors (FETs) has been fabricated, with several demonstrating quantum-dot (QD) behavior at cryogenic temperatures. However, understanding the relationship between the cryogenic charge-transport characteristics and the number of the GNRs in the device is challenging, as the length and location of the GNRs in the junction are not precisely controlled. Here, we present a methodology based on a dual-gate FET that allows us to identify different scenarios, such as single GNRs, double or multiple GNRs in parallel, and a single GNR interacting with charge traps. Our dual-gate FET architecture therefore offers a quantitative approach for comprehending charge transport in atomically precise GNRs.

Tunneling electronic excitations spatial mapping of a single graphene nanoribbon on Ag(111)

Tunneling electronic excitations spatial mapping of a single graphene nanoribbon on Ag(111)

Visualizing Ribbon-to-Ribbon Heterogeneity of Chemically Unzipped Wide Graphene Nanoribbons by Silver Nanowire-Based Tip-Enhanced Raman Scattering Microscopy.

Graphene nanoribbons (GNRs), a quasi-one-dimensional form of graphene, have gained tremendous attention due to their potential for next-generation nanoelectronic devices. The chemical unzipping of carbon nanotubes is one of the attractive fabrication methods to obtain single-layered GNRs (sGNRs) with simple and large-scale production. The authors recently found that unzipping from double-walled carbon nanotubes (DWNTs), rather than single- or multi-walled, results in high-yield production of crystalline sGNRs. However, details of the resultant GNR structure, as well as the reaction mechanism, are not fully understood due to the necessity of nanoscale spectroscopy. In this regard, silver nanowire-based tip-enhanced Raman spectroscopy (TERS) is applied for single GNR analysis and investigated ribbon-to-ribbon heterogeneity in terms of defect density and edge structure generated through the unzipping process. The authors found that sGNRs originated from the inner walls of DWNTs showed lower defect densities than those from the outer walls. Furthermore, TERS spectra of sGNRs exhibit a large variety in graphitic Raman parameters, indicating a large variation in edge structures. This work at the single GNR level reveals, for the first time, ribbon-to-ribbon heterogeneity that can never be observed by diffraction-limited techniques and provides deeper insights into unzipped GNR structure as well as the DWNT unzipping reaction mechanism.

Sub-5 nm Contacts and Induced p-n Junction Formation in Individual Atomically Precise Graphene Nanoribbons.

This paper demonstrates the fabrication of nanometer-scale metal contacts on individual graphene nanoribbons (GNRs) and the use of these contacts to control the electronic character of the GNRs. We demonstrate the use of a low-voltage direct-write STM-based process to pattern sub-5 nm metallic hafnium diboride (HfB2) contacts directly on top of single GNRs in an ultrahigh-vacuum scanning tunneling microscope (UHV-STM), with all the fabrication performed on a technologically relevant semiconductor silicon substrate. Scanning tunneling spectroscopy (STS) data not only verify the expected metallic and semiconducting character of the contacts and GNR, respectively, but also show induced band bending and p-n junction formation in the GNR due to the metal-GNR work function difference. Contact engineering with different work function metals obviates the need to create GNRs with different characteristics by complex chemical doping. This is a demonstration of the successful fabrication of precise metal contacts and local p-n junction formation on single GNRs.

Edge Contacts to Atomically Precise Graphene Nanoribbons.

Bottom-up-synthesized graphene nanoribbons (GNRs) are an emerging class of designer quantum materials that possess superior properties, including atomically controlled uniformity and chemically tunable electronic properties. GNR-based devices are promising candidates for next-generation electronic, spintronic, and thermoelectric applications. However, due to their extremely small size, making electrical contact with GNRs remains a major challenge. Currently, the most commonly used methods are top metallic electrodes and bottom graphene electrodes, but for both, the contact resistance is expected to scale with overlap area. Here, we develop metallic edge contacts to contact nine-atom-wide armchair GNRs (9-AGNRs) after encapsulation in hexagonal boron-nitride (h-BN), resulting in ultrashort contact lengths. We find that charge transport in our devices occurs via two different mechanisms: at low temperatures (9 K), charges flow through single GNRs, resulting in quantum dot (QD) behavior with well-defined Coulomb diamonds (CDs), with addition energies in the range of 16 to 400 meV. For temperatures above 100 K, a combination of temperature-activated hopping and polaron-assisted tunneling takes over, with charges being able to flow through a network of 9-AGNRs across distances significantly exceeding the length of individual GNRs. At room temperature, our short-channel field-effect transistor devices exhibit on/off ratios as high as 3 × 105 with on-state current up to 50 nA at 0.2 V. Moreover, we find that the contact performance of our edge-contact devices is comparable to that of top/bottom contact geometries but with a significantly reduced footprint. Overall, our work demonstrates that 9-AGNRs can be contacted at their ends in ultra-short-channel FET devices while being encapsulated in h-BN.

Contacting individual graphene nanoribbons using carbon nanotube electrodes.

Graphene nanoribbons synthesized using bottom-up approaches can be structured with atomic precision, allowing their physical properties to be precisely controlled. For applications in quantum technology, the manipulation of single charges, spins or photons is required. However, achieving this at the level of single graphene nanoribbons is experimentally challenging due to the difficulty of contacting individual nanoribbons, particularly on-surface synthesized ones. Here we report the contacting and electrical characterization of on-surface synthesized graphene nanoribbons in a multigate device architecture using single-walled carbon nanotubes as the electrodes. The approach relies on the self-aligned nature of both nanotubes, which have diameters as small as 1 nm, and the nanoribbon growth on their respective growth substrates. The resulting nanoribbon-nanotube devices exhibit quantum transport phenomena-including Coulomb blockade, excited states of vibrational origin and Franck-Condon blockade-that indicate the contacting of individual graphene nanoribbons.

MoRe Electrodes with 10 nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons.

Atomically precise graphene nanoribbons (GNRs) are predicted to exhibit exceptional edge-related properties, such as localized edge states, spin polarization, and half-metallicity. However, the absence of low-resistance nanoscale electrical contacts to the GNRs hinders harnessing their properties in field-effect transistors. In this paper, we make electrical contact with nine-atom-wide armchair GNRs using superconducting alloy MoRe as well as Pd (as a reference), which are two of the metals providing low-resistance contacts to carbon nanotubes. We take a step toward contacting a single GNR by fabricating electrodes with needlelike geometry, with about 20 nm tip diameter and 10 nm separation. To preserve the nanoscale geometry of the contacts, we develop a PMMA-assisted technique to transfer the GNRs onto the prepatterned electrodes. Our device characterizations as a function of bias voltage and temperature show thermally activated gate-tunable conductance in GNR-MoRe-based transistors.

Imaging and controlling coherent phonon wave packets in single graphene nanoribbons

The motion of atoms is at the heart of any chemical or structural transformation in molecules and materials. Upon activation of this motion by an external source, several (usually many) vibrational modes can be coherently coupled, thus facilitating the chemical or structural phase transformation. These coherent dynamics occur on the ultrafast timescale, as revealed, e.g., by nonlocal ultrafast vibrational spectroscopic measurements in bulk molecular ensembles and solids. Tracking and controlling vibrational coherences locally at the atomic and molecular scales is, however, much more challenging and in fact has remained elusive so far. Here, we demonstrate that the vibrational coherences induced by broadband laser pulses on a single graphene nanoribbon (GNR) can be probed by femtosecond coherent anti-Stokes Raman spectroscopy (CARS) when performed in a scanning tunnelling microscope (STM). In addition to determining dephasing (~440 fs) and population decay times (~1.8 ps) of the generated phonon wave packets, we are able to track and control the corresponding quantum coherences, which we show to evolve on time scales as short as ~70 fs. We demonstrate that a two-dimensional frequency correlation spectrum unequivocally reveals the quantum couplings between different phonon modes in the GNR.

Topologically localized excitons in single graphene nanoribbons.

Intrinsic optoelectronic properties of atomically precise graphene nanoribbons (GNRs) remain largely unexplored because of luminescence quenching effects that are due to the metallic substrate on which the ribbons are grown. We probed excitonic emission from GNRs synthesized on a metal surface with atomic-scale spatial resolution. A scanning tunneling microscope (STM)-based method to transfer the GNRs to a partially insulating surface was used to prevent luminescence quenching of the ribbons. STM-induced fluorescence spectra reveal emission from localized dark excitons that are associated with the topological end states of the GNRs. A low-frequency vibronic emission comb is observed and attributed to longitudinal acoustic modes that are confined to a finite box. Our study provides a path to investigate the interplay between excitons, vibrons, and topology in graphene nanostructures.

From defect to effect: controlling electronic transport in chevron graphene nanoribbons

While bottom-up synthesis allows for precise control over the properties of graphene nanoribbons (GNRs), the use of certain precursor molecules can result in edge defects, such as missing benzene rings that resemble a ‘bite’. We investigate the adverse effect of the ‘bite’ defects on the electronic transport properties in three chevron-type GNRs and discover that the extent of scattering is governed by the different defect positions. Applying the concepts learned in single GNRs, we engineer defects in two nanostructures to construct prototypical components for nanoelectronics. First, we design a switch, consisting of three laterally fused fluorenyl-chevron GNRs, and place a pair of ‘bite’ defects to effectively allow the switching between four binary states corresponding to distinct current pathways. Second, we show that conscientious placement of a ‘bite’ defect pair can increase conductance between two leads in a triple chevron GNR junction. Overall, we outline how the incorporation of ‘bite’ defects affects transport properties in chevron-type nanostructures and provide a guide on how to design nanoelectronic components.

Controlled Preparation and Device Application of Sub-5 nm Graphene Nanoribbons and Graphene Nanoribbon/Carbon Nanotube Intramolecular Heterostructures

Narrow graphene nanoribbons (GNRs) and GNR/single-walled carbon nanotube (SWNT) intramolecular heterojunctions are ideal candidates to construct next-generation electronic and optoelectronic devices. However, the fabrication of high-quality long sub-5 nm wide GNRs and GNR/SWNT heterojunctions is a great challenge. Here, we report a method to produce high-quality sub-5 nm wide GNRs with smooth edges and GNR/SWNT intramolecular heterostructures via palladium-catalyzed full and partial unzipping of SWNTs, respectively. The resulting GNRs could be as narrow as 2.2 nm and had an average length of over 1 μm. By adjusting the unzipping time and the deposited positions of palladium nanoparticles, controlled multiple GNR/SWNT heterostructures were also fabricated on an individual parent SWNT. A GNR field-effect transistor (FET) constructed by a 3.1 nm wide GNR could simultaneously achieve a high on/off current ratio of 1.1 × 104 and a large mobility of 598 cm2 V-1 s-1. The photovoltaic device based on a single GNR (2.4 nm in width)/SWNT (0.8 nm in diameter) heterojunction exhibited a large open-circuit voltage (Voc) of 0.52 V and a high external power conversion efficiency (η) of 4.7% under the 1550 nm wavelength illumination of 931 mW cm-2. Our method provides a pathway to controllably prepare high-quality sub-5 nm GNRs and GNR/SWNT heterojunctions for fundamental studies and practical applications in the electronic and optoelectronic fields.

Planar bridging an atomically precise surface trench with a single molecular wire on an Au(1 1 1) surface

In a bridge configuration, a single graphene nanoribbon (GNR) is positioned with a picometer precision over a trench in between two monoatomic steps on an Au(111) surface. This GNR molecular wire adopts a deformed conformation towards the down terrace in between the two contact step edges. Using differential conductance dI/dV mapping from a low-temperature scanning tunneling microscope, it is demonstrated how the electronic delocalization along GNR is cut at each contact by its down curvature. It points out the need to bring conductive nanocontacts backside of the support for preserving the front side GNR planar conformation.

Addressing Electron Spins Embedded in Metallic Graphene Nanoribbons.

Spin-hosting graphene nanostructures are promising metal-free systems for elementary quantum spintronic devices. Conventionally, spins are protected from quenching by electronic band gaps, which also hinder electronic access to their quantum state. Here, we present a narrow graphene nanoribbon substitutionally doped with boron heteroatoms that combines a metallic character with the presence of localized spin 1/2 states in its interior. The ribbon was fabricated by on-surface synthesis on a Au(111) substrate. Transport measurements through ribbons suspended between the tip and the sample of a scanning tunneling microscope revealed their ballistic behavior, characteristic of metallic nanowires. Conductance spectra show fingerprints of localized spin states in the form of Kondo resonances and inelastic tunneling excitations. Density functional theory rationalizes the metallic character of the graphene nanoribbon due to the partial depopulation of the valence band induced by the boron atoms. The transferred charge builds localized magnetic moments around the boron atoms. The orthogonal symmetry of the spin-hosting state’s and the valence band’s wave functions protects them from mixing, maintaining the spin states localized. The combination of ballistic transport and spin localization into a single graphene nanoribbon offers the perspective of electronically addressing and controlling carbon spins in real device architectures.

Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel

The electrical transport properties of a turbostratic multilayer graphene nanoribbon (GNR) with various number of layers (1–8 layers) were investigated using a field effect transistor with a single GNR channel. In the turbostratic multilayer GNR with 5 layers or less, the carrier mobility and Ion/Ioff ratio in the FETs were improved by slightly increasing the conductance with increasing the number of layers, meaning that the excellent semiconducting characteristic. The improvement of the carrier transport properties promotes by the turbostratic stacking structure. In the turbostratic multilayer GNR with 6 layers or more, although the Ion/Ioff ratio degraded, the conductance extremely improved with increasing the number of layers. This indicates that the turbostratic multilayer GNR with thicker number of layers becomes the significantly lower resistivity wire as a metallic characteristic. We revealed that the crossover point of the physical properties between the semiconducting and metallic characteristics is determined by the strength to screen the surrounding environment effects such as charged impurity on the substrate. Our comprehensive investigation provides a design guidance for the various electrical device applications of GNR materials.

Scattered coupling between two wrinkled graphene nanoribbons analyzed by boundary element method

In this paper, we propose a two-dimensional (2D) boundary element method (BEM) to explore the coupling properties of two distorted graphene nanoribbons (GNRs) with wrinkles. From the calculation results, it is found that the resonant wavelengths are redshifted compared with a single GNR, and the scattering intensity is greatly increased, due to the coupling between the two GNRs. In the non-degenerate structure, the coupling resonance modes of the two GNRs are the superposition of the resonance modes of every single GNR, and the resonant wavelength and scattering intensity of different modes change differently with the gap between the two GNRs and their heights. When the coupling effect becomes stronger, some modes will split. We explain the results through the charge and current distribution of the GNRs. This work will help to understand the coupling mechanism of surface plasmon resonances of GNRs.

How Does van der Waals Confinement Enhance Phonon Transport?* *Supported by the National Natural Science Foundation of China (Grant Nos. 51606072 and 51576077).

We study the mechanism of van der Waals (vdW) interactions on phonon transport in atomic scale, which would boost developments in heat management and energy conversion. Commonly, the vdW interactions are regarded as a hindrance in phonon transport. Here we propose that the vdW confinement can enhance phonon transport. Through molecular dynamics simulations, it is realized that the vdW confinement is able to make more than two-fold enhancement on thermal conductivity of both polyethylene single chain and graphene nanoribbon. The quantitative analyses of morphology, local vdW potential energy and dynamical properties are carried out to reveal the underlying physical mechanism. It is found that the confined vdW potential barriers reduce the atomic thermal displacement magnitudes, leading to less phonon scattering and facilitating thermal transport. Our study offers a new strategy to modulate the phonon transport.

2N+4-rule and an atlas of bulk optical resonances of zigzag graphene nanoribbons

Development of on-chip integrated carbon-based optoelectronic nanocircuits requires fast and non-invasive structural characterization of their building blocks. Recent advances in synthesis of single wall carbon nanotubes and graphene nanoribbons allow for their use as atomically precise building blocks. However, while cataloged experimental data are available for the structural characterization of carbon nanotubes, such an atlas is absent for graphene nanoribbons. Here we theoretically investigate the optical absorption resonances of armchair carbon nanotubes and zigzag graphene nanoribbons continuously spanning the tube (ribbon) transverse sizes from 0.5(0.4) nm to 8.1(12.8) nm. We show that the linear mapping is guaranteed between the tube and ribbon bulk resonance when the number of atoms in the tube unit cell is 2N+4, where N is the number of atoms in the ribbon unit cell. Thus, an atlas of carbon nanotubes optical transitions can be mapped to an atlas of zigzag graphene nanoribbons.

Effects of oxygen adsorption on spin transport properties of single anthracene molecular devices

With the miniaturization of molecular devices, high-performance nano devices can be fabricated by controlling the spin states of electrons. Because of their advantages such as low energy consumption, easy integration and long decoherence time, more and more attention has been paid to them. So far, the spin filtration efficiency of molecular device with graphene electrode is not very stable, which will decrease with the increase of voltage, and thus affecting its applications. Therefore, how to enhance the spin filtration efficiency of molecular device with graphene electrode becomes a scientific research problem. Using the first principle calculations based on density functional theory combined with non-equilibrium Green’s function, the physical mechanism of regulating the spin polarization transport properties of single anthracene molecule device with graphene nanoribon as electrode is investigated by molecular oxygen adsorption. In order to explore the effect of the change of the connection mode between single anthracene molecule and zigzag graphene nanoribbon electrode on the spin transport properties of the device, we establish two models. The first model is the model M1, which is the single anthracene molecule longitudinal connection, and the second model is the model M2, which is the single anthracene molecule lateral connection. The adsorption model of single oxygen molecule is denoted by M1O and M2O respectively. The results show that when none of oxygen molecules is adsorbed, the spin filtering effect of single anthracene molecule connecting graphene nanoribbons laterally (M2) is better than that of single anthracene molecule connecting graphene nanoribbons longitudinally (M1). After oxygen molecules are adsorbed on single anthracene molecule, the enhanced localized degree of transport eigenstate will make the spin current of the two kinds of devices decrease by nearly two orders of magnitude. However, molecular oxygen adsorption significantly improves the spin filtering efficiency of the device and enhances the application performance of the device. The maximal spin filtering efficiency of single anthracene molecule connecting graphene nanoribbons longitudinal (M1O) can be increased from 72% to 80%. More importantly, the device with single anthracene molecule connecting graphene nanoribbons laterally (M2) maintains nearly 100% spin filtering efficiency in a bias range from –0.5 V to +0.5 V. These results provide more theoretical guidance for practically fabricating spin molecular devices and regulating their spin transport properties.