Single Event Effects Test Results Research Articles

Single-Event Effects on Commercial-Off-the-Shelf Edge-Processing Artificial Intelligence ASICs

Single-event effects test results are presented for heavy ions and high-energy protons on two commercial edge-processing artificial intelligence application-specific integrated circuits, particularly the Google Coral Accelerator Module, which employs a Google Coral Edge Tensor Processing Unit, and the Intel Neural Compute Stick 2, which employs the Intel Movidius Myriad X. The observed SEE signatures, probable causes within the devices, and single-event functional interrupt cross-sections are discussed. Ultimately, when SEUs or SEFIs are observed, there are negligible changes in the measured precision or accuracy of the algorithm, and rarely do the errors result in incorrect identification or classification.

Experimental study on the single event effects in pulse width modulators by laser testing

This paper presents single event effect (SEE) characteristics of UC1845AJ pulse width modulators (PWMs) by laser testing. In combination with analysis to map PWM circuitry in the microchip dies, the typical SEE response waveforms for laser pulses located in different circuit blocks of UC1845AJ are obtained and the SEE mechanisms are analyzed. The laser SEE test results show that there are some differences in the SEE mechanisms of different circuit blocks, and phase shifts or changes in the duty cycles of few output pulses are the main SEE behaviors for UC1845AJ. In addition, a new SEE behavior which manifests as changes in the duty cycles of many output pulses is revealed. This means that an SEE hardened design should be considered.

Development of COTS ADC SEE Test System for the ATLAS LArCalorimeter Upgrade

Radiation-tolerant, high speed, high density and low power commercial off-the-shelf (COTS) analog-to-digital converters (ADCs) are planned to be used in the upgrade to the Liquid Argon (LAr) calorimeter front end (FE) trigger readout electronics. Total ionization dose (TID) and single event effect (SEE) are two important radiation effects which need to be characterized on COTS ADCs. In our initial TID test, Texas Instruments (TI) ADS5272 was identified to be the top performer after screening a total 17 COTS ADCs from different manufacturers with dynamic range and sampling rate meeting the requirements of the FE electronics. Another interesting feature of ADS5272 is its 6.5 clock cycles latency, which is the shortest among the 17 candidates. Based on the TID performance, we have designed a SEE evaluation system for ADS5272, which allows us to further assess its radiation tolerance. In this paper, we present a detailed design of ADS5272 SEE evaluation system and show the effectiveness of this system while evaluating ADS5272 SEE characteristics in multiple irradiation tests. According to TID and SEE test results, ADS5272 was chosen to be implemented in the full-size LAr Trigger Digitizer Board (LTDB) demonstrator, which will be installed on ATLAS calorimeter during the 2014 Long Shutdownmore » 1 (LS1).« less

Heavy-Ion SEE Test Concept and Results for DDR-II Memories

In order to investigate heavy ion single event effects (SEEs) in advanced commercial DDR-II SDRAM memories, a large number of practical problems need to be addressed ranging from test approach, sample preparation, error analysis, physical error identifications and effective LET corrections before test results can be presented. This paper continues where Harboe-Soslashrensen et al. , 2003, ended with further details on most of the critical steps mentioned above. Additionally, the first set of SEE data will be presented and discussed covering Samsung, Infineon, Micron, and Elpida 512 M-bit DDR-II memory devices.

Single-Event Burnout and Avalanche Characteristics of Power DMOSFETs

Analyses of quasi-stationary avalanche simulations on radiation-hardened power MOSFETs suggest that the single-event burnout (SEB) failure is determined by the device's avalanche characteristics and confirm SEB failure mechanism is due to the turn-on of parasitic bipolar transistor. The heavy ion beam is only acting as a trigger. Simulation results on various 600 V and 250 V radiation-hardened power MOSFETs from International Rectifier are compared to an extensive set of single event effect test results and prove quasi-stationary avalanche simulation is capable of evaluating and predicting SEB susceptibility

Single Event Effects Test Results and Their Applications to Spacecraft Electronics

Covers advancements in spacecraft and tactical and strategic missile systems, including subsystem design and application, mission design and analysis, materials and structures, developments in space sciences, space processing and manufacturing, space operations, and applications of space technologies to other fields.