Single Etch Step Research Articles

High-efficiency and easy-processing thin-film lithium niobate edge coupler

Fiber-to-chip coupling with ultralow loss and broadband operation wavelength range is essential in the practical applications of thin-film lithium niobate (TFLN) integrated photonic devices. However, the existing edge couplers often require electron beam lithography overlaying and multiple etching processes, which are expensive and complex. In this Letter, we demonstrate an edge coupler that includes only a vertically tapered TFLN waveguide and silicon dioxide cladding. The coupling efficiency between a lensed fiber and an on-chip LN waveguide is down to 1.43 dB/facet, while the 3-dB bandwidth exceeds the range from 1510 to 1630 nm. These edge couplers also show reliable fiber misalignment tolerance. Furthermore, the fabrication complexity is greatly reduced since only a single etching step for the TFLN waveguide is needed. The minimum waveguide width of 1.3 μm guarantees compatibility with i-line photolithography, providing a potential for massive production of TFLN devices.

Benchmarking of HCl-Based Cyclic Deposition / Etch (CDE) and Single Deposition / Etch (DE) Processes for Selective Epitaxial Growth of SiGeC:B Films

In this paper, SiGeC:B growth behaviors at 550 °C, 10 Torr, were studied in a 300 mm industrial Reduced Pressure-Chemical Vapor Deposition reactor using a Si2H6/GeH4/SiH3CH3/B2H6 chemistry. Carbon atoms, for both SiGeC and SiGeC:B layers, were only incorporated into substitutional sites, with concentrations up to ~ 1.4 at%. It appeared that in-situ boron doping at a level of 1x1020 at.cm-3 did not modify the substitutional carbon incorporation. However, carbon and boron atoms were shown to compete for substitutional incorporation sites, as outlined by the increased SiGeC:B films resistivity. Cyclic Deposition / Etch (CDE) and Deposition / Etch (DE) processes were then benchmarked on blanket Si substrates and blanket Si wafers covered with 10 nm of Si3N4, with the aim to achieve selective growth on patterned wafers. The CDE process consisted of 10 cycles with deposition steps at 550 °C, 10 Torr and etch steps at 550 °C, 50 Torr with a very high HCl flow. The simpler DE process consisted in a single deposition step at 550 °C, 10 Torr, followed by a single etch step at 550, 575 or 600 °C, 600 Torr, with a very low HCl flow. CDE and DE processes both resulted in a rather low etch selectivity of 1.8 and produced slightly rough SiGeC:B surfaces. Finally, it was shown that the use of a HCl-based CDE process is not a viable solution to obtain high quality SiGeC:B films on patterned wafers at low growth temperatures. Meanwhile, DE yielded higher quality if slightly rough SiGeC:B layers.

Design and fabrication of a sub-3 dB grating coupler on an X-cut thin-film lithium niobate platform.

Thin-film lithium niobate (TFLN) based integrated photonic devices have been intensively investigated due to their promising properties, enabling various on-chip applications. Grating couplers (GCs) are wildly used for their flexibility and high alignment tolerance for fiber-to-chip coupling. However, achieving high coupling efficiency (CE) in TFLN GCs often requires the use of reflectors, hybrid materials, or extremely narrow linewidths of the grating arrays, which significantly increases the fabrication difficulty. Therefore, there is a demand for high-CE GCs on TFLN with simple structure and easy fabrication processes. In this paper, combining process capabilities, we demonstrate a highly efficient apodized GC by linearly optimizing the period length and the fill factor on a 600-nm-thick TFLN platform. Without any reflector or hybrid material, we achieve a remarkable coupling loss of -2.97 dB at 1555 nm on the 600-nm-thick X-cut TFLN platform with only a single lithography and etching step. Our work sets a new benchmark for CE among GCs on the 600-nm-thick TFLN platform.

Broadband and easily fabricated double-tip edge coupler based on thin-film lithium niobate platform

Due to the significant difference in spot size between lithium-niobate-on-insulator (LNOI) waveguide and fiber, there is a substantial coupling loss between them, which limits the interconnection and application of LN photonic chips. Although some LNOI edge couplers have been designed and fabricated with low coupling loss between chip and fiber, they require high etching accuracy. In this paper, a low-loss, broadband and easily fabricated edge coupler is designed and fabricated on the LNOI platform. To reduce the etching requirement for tip width, a design has been adopted with symmetrical double tips at the edge. Additionally, a multimode interferometer (MMI) is introduced to ensure large fabrication tolerance. The proposed design only requires a single full etching step, significantly reducing stringent requirements for process with high precise. Experimental results demonstrate that the device exhibits a coupling loss less than 3.5 dB/facet in the wavelength range of 1500–1640 nm, while achieving a low coupling loss of 2.71 dB/facet at 1550 nm.

A High-Efficiency Wideband Grating Coupler Based on Si3N4 and a Silicon-on-Insulator Heterogeneous Integration Platform.

To fully utilize the advantages of Si3N4 and Silicon-On-Insulator to achieve a high-efficiency wideband grating coupler, we propose and numerically demonstrate a grating coupler based on Si3N4 and a Silicon-On-Insulator heterogeneous integration platform. A two-dimensional model of the coupler was established and a comprehensive finite difference time domain analysis was conducted. Focusing on coupling efficiency as a primary metric, we examined the impact of factors such as grating period, filling factor, etching depth, and the thicknesses of the SiO2 upper cladding, Si3N4, silicon waveguide, and SiO2 buried oxide layers. The calculations yielded an optimized grating coupler with a coupling efficiency of 81.8% (-0.87 dB) at 1550 nm and a 1-dB bandwidth of 540 nm. The grating can be obtained through a single etching step with a low fabrication complexity. Furthermore, the fabrication tolerances of the grating period and etching depth were studied systematically, and the results indicated a high fabrication tolerance. These findings can offer theoretical and parameter guidance for the design and optimization of high-efficiency and broad-bandwidth grating couplers.

Inverse-designed silicon nitride reflectors.

Reflectors play a pivotal role in silicon photonics since they are used in a wide range of applications, including attenuators, filters, and lasers. This Letter presents six silicon nitride reflectors implemented using the inverse design technique. They vary in footprint, ranging from 4 µm × 3 µm to 4 µm × 8 µm. The smaller device has an average simulated reflectivity of -1.5 dB, whereas the larger one exhibits an average reflectivity of -0.09 dB within the 1530 to 1625 nm range. The latter also presents a 1-dB bandwidth of 172 nm, spanning from 1508 to 1680 nm. Despite their resemblance to circular gratings, these devices are more intricate and compact, particularly due to their non-intuitive features near the input waveguide, which include rough holes and teeth. The roughness of these features significantly contributes to the performance of the devices. The reflectors were fabricated on a silicon nitride multi-project wafer (MPW) through a streamlined process involving only a single etching step. The 4 µm × 8 µm reflector demonstrates a remarkably high reflectivity of -0.26±0.11 dB across the 1530 to 1600 nm range, rendering it suitable for high-quality factor cavities with direct applications in lasers and optical communications.

Low-loss grating coupler with a subwavelength structure on a thin-film lithium niobate substrate.

We demonstrated a low-loss O-band grating coupler on an x-cut thin-film lithium niobate substrate by implementing subwavelength and apodized structures. The subwavelength gratings were used to mitigate the refractive index discontinuity between the input taper and grating region, which was the first application of such a structure for grating coupler optimization on a thin-film lithium niobate substrate. The coupling efficiency was measured to be -1.99 dB/coupler at a wavelength of 1312.8 nm, which was the lowest loss among the reported lithium niobate grating couplers that do not use metal mirrors. The proposed design does not require metal mirrors or any additional material layers and can be easily fabricated with a single-step lithography and etching processes.

Cooperative stiffening of flexible high aspect ratio nanostructures impart mechanobactericidal activity to soft substrates

Understanding how bacteria interact with surfaces with micrometer and/or sub-micrometer roughness is critical for developing antibiofouling and bactericidal topographies. A primary research focus in this field has been replicating and emulating bioinspired nanostructures on various substrates to investigate their mechanobactericidal potential. Yet, reports on polymer substrates, especially with very high aspect ratios, have been rare, despite their widespread use in our daily lives. Specifically, the role of a decrease in stiffness with an increase in the aspect ratio of nanostructures may be consequential for the mechanobactericidal mechanism, which is biophysical in nature. Therefore, this work reports on generating bioinspired high aspect ratio nanostructures on poly(ethylene terephthalate) (PET) surfaces to study and elucidate their antibacterial and antibiofouling properties. Biomimetic nanotopographies with variable aspect ratios were generated via maskless dry etching of PET in oxygen plasma. It was found that both high and low-aspect ratio structures effectively neutralized Gram-negative bacterial contamination by imparting damage to their membranes but were unable to inactivate Gram-positive cells. Notably, the clustering of the soft, flexible tall nanopillars resulted in cooperative stiffening, as revealed by the nanomechanical behavior of the nanostructures and validated with the help of finite element simulations. Moreover, external capillary forces augmented the killing efficiency by enhancing the strain on the bacterial cell wall. Finally, experimental and computational investigation of the durability of the nanostructured surfaces showed that the structures were robust enough to withstand forces encountered in daily life. Our results demonstrate the potential of the single-step dry etching method for the fabrication of mechanobactericidal topographies and their potential in a wide variety of applications to minimize bacterial colonization of soft substrates like polymers.

Design of the Bimodal Grating Sensor with a Built-In Mode Demultiplexer.

This new sensor design provides good volume sensitivity (around 1600 nm/RIU) via collinear diffraction by the asymmetric grating placed in the waveguide vicinity. It provides the mode transformation between the fundamental TE0 and the first TE1 modes of the silicon wire (0.22 μm by a 0.580 μm cross-section) in the water environment. In order to provide the wavelength interrogation with a better extinction ratio for the measuring signal, the grating design is incorporated with the mode filter/demultiplexer. It selects, by the compact directional coupler (maximum 4 μm wide and 14 μm long), only the first guided mode (close to the cutoff) and transmits it with small excess loss (about -0.5 dB) to the fundamental TE0 mode of the neighboring single mode silicon wire, having variable curvature and width ranging from 0.26 μm to 0.45 μm. At the same time, the parasitic crosstalk of the input TE0 mode is below -42 dB, and that provides the option of simple and accurate wavelength sensor interrogation. The environment index is measured by the spectral peak position of the transmitted TE0 mode power in the output single mode silicon wire waveguide of the directional coupler. This type of optical sensor is of high sensitivity (iLOD~ 2.1 × 10-4 RIU for taking into account the water absorption at 1550 nm) and could be manufactured by modern technology and a single-step etching process.

Sound-Speed Modifying Acoustic Metasurfaces for Acoustic Holography.

Acoustic metasurfaces offer unique capabilities to steer and direct acoustic fields, though these are generally composed of complex 3D structures, complicating their fabrication and applicability to higher frequencies. Here, an ultrathin metasurface approach is demonstrated,whereinplanarized micropillars in a discretized phase arrayareutilized. This subwavelength metasurface is easily produced via a single-step etching process and is suitable for megahertz-scale applications. The flexibility of this approach is further demonstrated in the production of complex acoustic patterns via acoustic holography. This metasurface approach, with models used to predict their behavior, has broad potential in applications where robust, high-frequency acoustic manipulation is required, including microfluidics, cell/tissue engineering, and medical ultrasound.

Broadband dual-mode 3 dB power splitter using bricked subwavelength gratings

The multimode power splitter plays an essential role in on-chip mode-division multiplexing systems. In this work, a broadband dual-mode optical power splitter based on the self-imaging effect in the multimode interference (MMI) engineered by bricked subwavelength gratings (BSWGs) is proposed. The dual-mode power splitter is optimized by combining the 3D finite difference time domain (FDTD) and the particle swarm optimization (PSO) method. For the input T E 0 mode, the insertion loss (IL) and the imbalance (IB) are lower than 0.55 dB and 0.65 dB, while the IL and IB for the input T E 1 mode are, respectively, lower than 0.7 dB and 0.37 dB over 150 nm bandwidth in the wavelength range of 1.5–1.65 µm. In addition, the cross talk (CT) is lower than − 25 d B for the two modes over this wavelength range. Furthermore, the minimum feature size of the gratings is as large as 135 nm, and only a single etch step is required, which is beneficial for the fabrication.

Mechanobactericidal Nanotopography on Nitrile Surfaces toward Antimicrobial Protective Gear.

We have much to learn from other living organisms when it comes to engineering strategies to combat bacterial infections. This study describes the fabrication of cicada wing-inspired nanotopography on commercially pure (CP) nitrile sheets and nitrile gloves for medical use using the reactive ion etching (RIE) technique. Antibacterial activity against P. aeruginosa was tested using two different surface morphologies. It was observed that the etched nitrile surfaces effectively minimized bacterial colonization by inducing membrane damage. Our findings demonstrate a single-step dry etching method for creating mechanobactericidal topographies on nitrile-based surfaces. These findings have utility in designing next-generation personal protective gear in the clinical setting and for many other important applications in the age of antimicrobial resistance.

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation.

The effect of the source/drain compressive stress on the mechanical stability of stacked Si nanosheets (NS) during the process of channel release has been investigated. The stress of the nanosheets in the stacking direction increased first and then decreased during the process of channel release by technology computer-aided design (TCAD) simulation. The finite element simulation showed that the stress caused serious deformation of the nanosheets, which was also confirmed by the experiment. This study proposed a novel channel release process that utilized multi-step etching to remove the sacrificial SiGe layers instead of conventional single-step etching. By gradually releasing the stress of the SiGe layer on the nanosheets, the stress difference in the stacking direction before and after the last step of etching was significantly reduced, thus achieving equally spaced stacked nanosheets. In addition, the plasma-free oxidation treatment was introduced in the multi-step etching process to realize an outstanding selectivity of 168:1 for Si0.7Ge0.3 versus Si. The proposed novel process could realize the channel release of nanosheets with a multi-width from 30 nm to 80 nm with little Si loss, unlocking the full potential of gate-all-around (GAA) technology for digital, analog, and radio-frequency (RF) circuit applications.

Functionalized Ti3C2Tx Nanosheets Based Biosensor for Point-of-Care Detection of SARS-CoV-2 Antigen

MXenes are considered a promising class of two-dimensional materials with extraordinary physical and electrochemical properties. Distinguished features like high specific surface area and outstanding electrical conductivity make them suitable for electrochemical biosensing applications. Here, we report the development of a biosensor involving the functionalized MXene–titanium carbide nanosheets (Ti3C2Tx-NS) and monoclonal antibodies against the SARS-CoV-2 nucleocapsid protein (anti-SARS-CoV-2 mAb) to design a point-of-care device for detection of the SARS-CoV-2 nucleocapsid protein (SARS-CoV-2 NP) antigen. Few-layered titanium carbide nanosheets (denoted as FL-Ti3C2Tx-NS) have been synthesized using a single-step etching and delamination method and characterized using optical and electron microscopy techniques revealing the suitability for immunosensing applications. Binding studies revealed the excellent affinity between the biosensor and the SARS-CoV-2 NP. Electrochemical detection of SARS-CoV-2 NP is performed using differential pulse voltammetry and read by a smartphone-based user interface. The proposed FL-Ti3C2Tx-NS based biosensor offers the detection of SARS-CoV-2 NP with a limit of detection of 0.91 nM in a wide detection range in spiked saliva samples. Additionally, there is no cross-reactivity in the presence of potential interferants like SARS-CoV-2 spike glycoprotein and bovine serum albumin. These findings demonstrate the potential of MXenes in developing a rapid and reliable tool for SARS-CoV-2 NP detection. While we report the biosensing of SARS-CoV-2 NP, our system also paves the way for the detection of other SARS-CoV-2 antigens like spike protein or other biomolecules based on antigen–antibody interactions.

Genetic optimization of Brillouin scattering gain in subwavelength-structured silicon membrane waveguides

On-chip Brillouin optomechanics has great potential for applications in communications, sensing, and quantum technologies. Tight confinement of near-infrared photons and gigahertz phonons in integrated waveguides remains a key challenge to achieving strong on-chip Brillouin gain. Here, we propose a new strategy to harness Brillouin gain in silicon waveguides, based on the combination of genetic algorithm optimization and periodic subwavelength structuration to engineer photonic and phononic modes simultaneously. The proposed geometry is composed of a waveguide core and a lattice of anchoring arms with a subwavelength period requiring a single etch step. The waveguide geometry is optimized to maximize the Brillouin gain using a multi-physics genetic algorithm. Our simulation results predict a remarkable Brillouin gain exceeding 3300 W−1m−1, for a mechanical frequency near 15 GHz.

Silicon-based compact mode converter using bricked subwavelength grating

Facing the increasing capacity requirements of on-chip optical interconnects, mode division multiplexing technology (MDM), which fully uses the different spatial eigenmodes at the same wavelength as independent channels to transmit optical signals, has attracted tremendous interest. Mode-order converter that can convert the fundamental mode into high-order mode is a key component in MDM system. However, it is still very challenging to achieve compact mode-order converters with high performances. Subwavelength grating (SWG) can be equivalent to homogenous material, which has the prominent advantages such as controlling over birefringence, dispersion and anisotropy, thus making photonic devices possess high performance. Wheras the conventional SWG only needs single-etch step, but the implementation of SWG structure usually requires a fabrication resolution on the order of 100 nm and below, which is difficult for current wafer-scale fabrication technology. The anisotropic response of SWG can be further engineered by introducing bricked topology structure, providing an additional degree of freedom in the design. Meanwhile, the requirement for fabrication resolution can also be reduced (> 100 nm). In this work, we experimentally demonstrate compact TE<sub>0</sub>-TE<sub>1</sub> mode-order converter and TE<sub>0</sub>-TE<sub>2</sub> mode-order converter by using a bricked subwavelength grating (BSWG) based on a silicon-on-insulator (SOI) with the BSWG having a minimum feature size of 145 nm. In the proposed mode-order converter, a quasi-TE<sub>0</sub> mode is generated in the BSWG region, which can be regarded as an effective bridge between the two TE modes to be converted. Flexible mode conversion can be realized by only choosing appropriate structural parameters for specific mode transitions between input/output modes and the quasi-TE<sub>0</sub> mode. By combining three-dimensional (3D) finite difference time domain (FDTD) and particle swarm optimization (PSO) method, TE<sub>0</sub>-TE<sub>1</sub> mode-order converter and TE<sub>0</sub>-TE<sub>2</sub> mode-order converter are optimally designed. They can convert TE<sub>0</sub> mode into TE<sub>1</sub> and TE<sub>2</sub> mode with conversion length of 9.39 µm and 11.27 µm, respectively. The simulation results show that the insertion loss of < 1 dB and crosstalk of < –15 dB are achieved for both TE<sub>0</sub>-TE<sub>1</sub> mode-order converter and TE<sub>0</sub>-TE<sub>2</sub> mode-order converter, their corresponding working bandwidths being 128 nm (1511–1639 nm) and 126 nm (1527–1653 nm), respectively. The measurement results indicate that insertion loss and crosstalk are, respectively, less than 2.5 dB and –10 dB in a bandwidth of 68 nm (1512–1580 nm, limited by the laser tuning range and grating coupler).

Broadband Polarization Splitter-Rotator on Lithium Niobate-on-Insulator Platform

Polarization splitter-rotators (PSRs) are crucial components for controlling the polarization states of light in polarization-division multiplexing systems. However, current PSRs on the lithium niobate-on-insulator (LNOI) platform suffer from fabrication difficulty in high-precision shallow-etching and minimal feature size. In this letter, a large-bandwidth PSR is proposed based on LNOI strip-waveguide which only requires a single full etching step. The device is composed of an adiabatic taper, a Y-splitter, and a multi-mode interferometer. The minimal feature size is larger than 500 nm, which greatly reduces the difficulty of etching. Experimental results show that the insertion loss of such PSR is less than 1.5 dB with a polarization extinction ratio (PER) of more than 20 dB in a wide wavelength range of 1514–1640 nm for the TE0 mode. Additionally, a PER of 10 dB over 47 nm bandwidth (1502-1549 nm) for the TM0 mode is also demonstrated with our device. This LNOI-based PSR is promising in on-chip polarization-division multiplexing optical transmissions.

Multiple material stack grayscale patterning using electron-beam lithography and a single plasma etching step

In this paper, we present a novel method to perform grayscale electron-beam lithography on multilayer stacks where the pattern transfer is done in a single plasma etching step. Due to the differences in material etch rates in the stack, the shape of the resist after development vs the shape of the multilayer stack after etching is significantly different. To be able to reach the desired shape in the multilayer stack, the final resist dose is defined by an etching calibration curve that describes the relationship between the electron-beam dose and the remaining materials thickness after plasma etching. With this method, a resistive memory crossbar array is fabricated with a height resolution of 10 nm and nanoscale dimension devices.

A Hydrofluoric Acid-Free Green Synthesis of Magnetic M.Ti2CTx Nanostructures for the Sequestration of Cesium and Strontium Radionuclide.

HighlightsAn environmentally friendly MAX phase etching methodology was establishedSodium hydroxide produced magnetic layered M.Ti2CTx nanostructureM.Ti2C-AIII exhibited exceptional Sr2+ and Cs+ removal capacities of 376 and 142.88 mg/gHighly efficient magnetic nanostructures permitted selective radionuclide removalMAX phases are the parent materials used for the formation of MXenes, and are generally obtained by etching using the highly corrosive acid HF. To develop a more environmentally friendly approach for the synthesis of MXenes, in this work, titanium aluminum carbide MAX phase (Ti2AlC) was fabricated and etched using NaOH. Further, magnetic properties were induced during the etching process in a single-step etching process that led to the formation of a magnetic composite. By carefully controlling etching conditions such as etching agent concentration and time, different structures could be produced (denoted as M.Ti2CTx). Magnetic nanostructures with unique physico-chemical characteristics, including a large number of binding sites, were utilized to adsorb radionuclide Sr2+ and Cs+ cations from different matrices, including deionized, tap, and seawater. The produced adsorbents were analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS). The synthesized materials were found to be very stable in the aqueous phase, compared with corrosive acid-etched MXenes, acquiring a distinctive structure with oxygen-containing functional moieties. Sr2+ and Cs+ removal efficiencies of M.Ti2CTx were assessed via conventional batch adsorption experiments. M.Ti2CTx-AIII showed the highest adsorption performance among other M.Ti2CTx phases, with maximum adsorption capacities of 376.05 and 142.88 mg/g for Sr2+ and Cs+, respectively, which are among the highest adsorption capacities reported for comparable adsorbents such as graphene oxide and MXenes. Moreover, in seawater, the removal efficiencies for Sr2+ and Cs+ were greater than 93% and 31%, respectively. Analysis of the removal mechanism validates the electrostatic interactions between M.Ti2C-AIII and radionuclides.

Single-step etched two-dimensional polarization splitting dual-band grating coupler for wavelength (de)multiplexing.

Diffractive periodic-structure-based grating couplers (GCs) are the most widely used devices for light coupling between optical fibers and integrated photonic devices. However, conventional GCs have limited wavelength operation and are polarization specific, which is due to the intrinsic radiation angle dependency on both wavelength and polarization. Here we propose and experimentally demonstrate a polarization-splitting dual-band grating coupler (PS-DBGC) for polarization diversity and wavelength division (de)multiplexing (WDM) operation. The four-port two-dimensional PS-DBGC is based on a periodically arranged structure with square holes, and requires only a single etch step in a 340-nm silicon-on-insulator platform. The simulation predicts that the maximum coupling efficiency (CE) of the proposed PS-DBGC is -2.8 dB and -4.6 dB for the O- and C-band, respectively. The measured peak CEs of the fabricated device are -4.7 dB at 1280 nm and -8.4 dB at 1522 nm. We anticipate that this PS-DBGC could potentially improve the performance of any future integrated WDM passive optical network.