Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS) have been performed on boron shallow implants in silicon using electron beam irradiation of the Si surface simultaneous with oxygen exposure at 10 −6 Torr. The SIMS sputtered craters were examined by atomic force microscopy (AFM) in order to evaluate the extent of sputter-induced roughening of the analysis area. AES spectra showed that electron beam irradiation caused an increase in the extent of oxidation of Si surfaces. SIMS depth profiles demonstrated that simultaneous electron bombardment during oxygen backfill from the base pressure (10 −10 Torr) to 10 −6 Torr accelerated the oxidation rate of Si as measured by the reduced width of the surface transients in the Si + and SiO + signals. It was also found from AFM analysis that oxygen backfill caused the development of a ripple topography under these bombardment conditions (1 keV, 60° incident O 2 + primary beam). Simultaneous electron bombardment during oxygen backfill from the base pressure (10 −10 Torr) to 2.8×10 −6 Torr improved the depth resolution as measured by the B + signal. However, ripple formation played a more dominant role as the oxygen pressure was raised to 5.4×10 −6 Torr, causing poorer depth resolution.