Simulation Of Silicon Solar Cells Research Articles

Modeling and Simulation of Silicon Solar Cells under Low Concentration Conditions

Today’s research on concentrated photovoltaic (CPV) cells focuses on creating multi-junction semiconductor solar cells capable of withstanding high temperatures without losing their properties. This paper investigated silicon low concentrated photovoltaic (LCPV) devices using Fresnel lenses. The parameters of the silicon CPV cell were measured to simulate its operation based on a single-diode model with four and five parameters. The most optimal position of the Fresnel lens relative to the solar cell was shown, and the dependence of the CPV efficiency on the concentration ratio, incident solar power, and temperature was studied. Experiments on heating of a solar cell were conducted to build a model of heating of a solar cell under different solar radiation based on machine learning. Additionally, a cooling system was developed, and experiments were conducted for one LCPV cell. The resulting LCPV model was used to predict electrical power output and temperature change pattern using clear day data. Results of modeling show increase in generated energy by 27% compared with non-concentrated solar cells. Cooling system energy consumption was simulated, and the optimum cooling regime was determined. The proposed LCPV system can be used as a hybrid heat and electricity source, increase power generation, and does not require new solar cell production technologies.

Simulation of Silicon Solar Cells with Passivation Contact of Tunnel Oxide Layer

Simulation of Silicon Solar Cells with Passivation Contact of Tunnel Oxide Layer

Temperature-Dependent Modeling of Silicon Solar Cells—Eg, n i, Recombination, and VOC

The characterization and modeling of silicon solar cells under nonstandard conditions is an essential task in order to predict and optimize the annual yield when installed in the field. In this paper, focus is set on the temperature dependence of fundamental physical models for numerical device simulation of silicon solar cells. A wide range of industrially relevant solar cell concepts is simulated and compared to experimental data. The influence of fundamental physical models on the temperature dependence of the simulated devices is investigated. It is found that our simulations are in good agreement with experimental results for silicon solar cells that are limited by extrinsic defect or surface recombination. This is not the case for solar cells featuring carrier-selective contacts where intrinsic recombination processes, such as Auger recombination and radiative recombination, have a significant influence.

Modeling and Simulation of Silicon Solar Cell in MATLAB/SIMULINK for Optimization

Modeling and Simulation of Silicon Solar Cell in MATLAB/SIMULINK for Optimization

Modeling and Simulation of Silicon Solar Cell in MATLAB/SIMULINK for Optimization

One of the most significant current discussions in life is solar energy and has been in use since the beginning of time. Increasingly, man is learning how to yoke this important resource and use it to replace traditional energy sources. Recent developments in the field of solar energy have led to a renewed interest in Solar cells to store this energy and reproduce electricity. Unfortunately the amount of energy converted is very less, that is the efficiency of conversion is poor. The major problem is to improve the efficiency so that the losses can be minimized. In this project the Maximum Power Points are found and the Fill Factor is calculated. In this paper using MATLAB and SIMULINK model the comparison of silicon solar cell and type of panels is done.

Implementation of Fermi–Dirac statistics and advanced models in PC1D for precise simulations of silicon solar cells

In this work we present a modified version of the commonly used semiconductor simulation program PC1D, named cmd-PC1D 6.0, which applies Fermi–Dirac (F–D) statistics, thus improving on the existing Boltzmann approximation that is employed in the original program. Several up-to-date models for crystalline Si have been implemented in the new program, including injection dependent band gap narrowing, carrier mobility and Auger recombination. The results obtained using cmd-PC1D 6.0 are verified against well-accepted and modern simulations tools for a range of both phosphorus- and boron-doped emitters with varying surface concentration. We find a good correspondence between the simulation results obtained with the different programs, with a deviation of less than 2fA/cm2 for the calculated emitter saturation current density using F–D statistics and less than 0.8 % relative deviation in all the main solar cell parameters under 1 sun illumination. By using the correct carrier statistics and the appropriate set of models it is now possible to avoid the commonly used effective models and adapted values, thus taking a large step in bringing PC1D further towards a more general, consistent and physically meaningful simulation tool for Si solar cells. The new program can be run from a command line or within a recently developed, powerful graphical user interface. Both cmd-PC1D 6.0 and the graphical user interface are freely available for download.

Simulation of Silicon Solar Cell Using PC1D

PC1D software, which was developed by the University of New South Wales, has been used to simulate photovoltaic properties of crystalline semiconductor devices. The paper focuses on the simulation of silicon solar cell by PC1D. The simulation of silicon solar cell is carried out by setting up key parameters, which include device area, thickness, band gap, etc. Several important characteristics of silicon solar cells are obtained by simulation.

Improved solar cells modelling: An object oriented approach

This paper shows the advantages, implications and some results of object oriented programming (OOP) applied as an example to the simulation of silicon solar cells improved with a defect layer for infrared absorption. This OOP approach can be extended in a laboratory environment, to other areas of scientific problems. The numerical computations, based on fundamental transport equations and without the approximations used in analytical computations shows an improvement in the short circuit current, the open circuit voltage and the maximum power of an illuminated silicon solar cell. Surprising results concerning local recombination effects and the role of additional local dopings added on the defect layer are pointed out.

Theoretical effects of surface diffused region lifetime models on silicon solar cells

A computer simulation of silicon solar cells has indicated that the combination of band gap reduction due to heavy doping and certain spatial forms of lifetime dependence can combine to form severe limitations to the open circuit voltage of silicon solar cells. The interaction of these effects tends to shift the active region of the diffused surface layer away from the injecting junction resulting in an increase in the current density injected into the surface region. Reductions in open circuit voltage as great as 10% over models which do not include these effects can be seen.