Numerical simulation of electrical conductivity of silicon diodes doped with bismuth during ion implantation was carried out. The input parameters were experimental data on the distribution profiles of bismuth implanted with energy from 40 to 360 keV. It was also taken into account that the concentration of bismuth affects the mobility of charge carriers. The effect of ion energy, doping level and temperature on the current-voltage characteristics of a silicon diode structure with a Gaussian distribution profile of bismuth was theoretically studied. Also, the saturation current and the non-ideality factor of the diode structure were calculated.