Silicon-based Photodetectors Research Articles

Ni/n-Si Schottky Junction: Self-Biased Infrared Photodetection via Hot Carrier Photoemission

Internal photoemission-based hot electron generation at metal-semiconductor junctions holds significant potential for silicon-based sub-bandgap NIR photodetectors. In this work, we designed a simple nickel-silicon Schottky junction using the pulsed laser deposition technique and performed both experimental and theoretical analyses. To reduce the complexity of fabrication and lower costs, we used a planar nickel thin film on top of n-type silicon. The thickness of the nickel thin film was optimized to improve absorption and hot electron generation near the Ni/Si interface. We measured and calculated reflectance using the transfer matrix approach to quantify the effect of thickness on EQE. We also calculated the thickness-dependent absorption profile to estimate hot electron production near the junction. The current-voltage characterization of Ni/n-Si Schottky photodetector was investigated under the dark conditions as well under 1200nm and 1300nm light illumination. Under self-bias conditions, a photodiode with a 12nm Ni thickness exhibits responsivity of 0.124mA/W and 0.069mA/W under illumination from 1200nm and 1300nm LED light, respectively. Furthermore, we used a comprehensive theoretical model to quantify the planar Ni/Si hot carrier generation and emission efficiency. and experimentally validated the calculated EQEs with the fabricated device. We believe the proposed complementary metal-oxide-semiconductor-compatible and simply structured Ni/Si Schottky photodetector will have potential applications in the silicon-based optoelectronics market.

Staggered band alignment of n-Er2O3/p-Si heterostructure for the fabrication of a high-performance broadband photodetector

The low responsivity of conventional Silicon photodiodes in ultraviolet and near-infrared regimes restricts their utility as broadband photodetectors (BBPDs). Despite ongoing investigations into various p-n heterostructures for Silicon-based BBPDs, challenges such as high dark current (Idark), low collection efficiency, low detectivity, and compatibility issues with large-scale Silicon-based devices persist. In this context, we have fabricated relatively unexplored n-Er2O3/p-Si heterojunction-based BBPDs. Polycrystalline Er2O3 thin films (∼110 nm) were deposited on p-Si 〈100〉 substrates by radio frequency magnetron sputtering. Although this process induces a microstrain of approximately 0.022 and a dislocation density of about 0.00303/nm2, the presence of optically active defects is minimal, indicated by a low Urbach energy (∼0.35 eV). X-ray photoelectron spectroscopy (XPS) analysis confirms staggered band alignment at the heterointerface, facilitating efficient charge carrier separation and transport. Consequently, the In/p-Si/n-Er2O3/In device demonstrated significant BBPD properties– low Idark ∼0.15 μA (at +5 V), photo-to-dark current ratio (PDCR) ∼6.5 (at +5 V, 700 nm) with a maximum photoresponsivity ∼22.3 A W−1, and impressive detectivity (∼1013 Jones) even in UV-C region where traditional silicon-based photodetectors respond feebly. The device also demonstrates transient photo-response across an ultrawide spectrum (254 nm–1200 nm) with a fast rise time/fall time ∼79 ms/∼86 ms (at −5 V for 600 nm illumination). This work establishes a straightforward and reliable method for proper material engineering, surface texturing, staggered heterojunction formation, and high-performance BBPD fabrication with prominent broad-spectrum responsivity, sizeable detectivity, and fast response. The integration of these BBPDs with Silicon opens possibilities for their use in electronic devices containing optical switches for communications and broadband image sensors, enhancing their utility in various applications.

Room-temperature telecom Si:Te PIN planar photodiodes: A study on optimizing device dimensions

The lack of efficient, cost-effective, room-temperature, and silicon-based photodetectors operating at the telecom bands has posed a persistent challenge in the realm of silicon photonics. One potential solution lies in introducing an impurity band within the silicon bandgap, offering a pathway to create a silicon-based photodetector that not only meets the requirements but also benefits from seamless integration with mature CMOS technology. Here, we report on enhancing device performance by introducing geometric modifications while retaining the doping concentration, device area, and operating conditions. The modified devices showcase improved responsivities, reaching approximately 3 × 10−2 A/W at 1300 nm (O band) and 1 × 10−2 A/W at 1500 nm (C band). These values significantly surpass prior work on Si:Te planar photodetectors, demonstrating an improvement of over 30 times. The noise equivalent power however was found to unavoidably increase by one order of magnitude to 10−6 (W /Hz).

Enhancing photodetector performance of MoS2 thin films by nitrogen ion irradiation

In this work, MoS2 thin films were grown on a Si substrate using RF sputtering, and subsequently subjected to nitrogen ion irradiation with varying ion fluence. The Raman spectroscopy observed the oxygen doping into MoS2 lattice and induced shift in E2g and A1g vibration modes, along with a decrease in the interdefect distance (LD) after ion irradiation. The evolution of oxygen into MoS2 sample after ion irradiation was confirmed by XPS. The incorporation of oxygen in the MoS2 is due to the bond breaking of the surface layers of the material due to ion irradiation, which creates dangling bonds. These bonds in the MoS2 are more reactive with the oxygen and lead to the formation of MoOx species on the surface of the material. The Field Emission Scanning Electron Microscopy (FESEM) provides the morphological study of post-irradiation samples. As ion fluence increases, the optical bandgap decreases from 1.46 eV to 1.33 eV. Using current-voltage (I–V) characteristics, the electrical properties of the irradiated films were characterized, along with photodetector measurements. This combined analysis provided a comprehensive understanding of the film's electrical behaviour, shedding light on their post-irradiation performance. Our results demonstrate that due to oxygen doped into MoS2/Si thin film significantly affects the barrier height, ideality factor, and carrier concentration in I–V characteristics. Taking silicon-based and n-type MoS2 heterojunction photodetectors, its photoresponsivity can reach ∼14.7 mA/W at 7.19 × 1016 ion-cm−2 ion fluence. Our findings provide insights into the tunability of the electrical properties of MoS2/Si thin films through ion irradiation, which has implications for the development of novel electronic and optoelectronic devices based on MoS2/Si thin film.

A two-dimensional PtSe2 thin film coupled with a graphene/Si Schottky junction for a high-performance photodetector.

Silicon materials are irreplaceable in the modern information society because of their rich resource, low price, and mature manufacturing technology for optoelectronics. However, improving the responsivity and response speed of silicon-based photodetectors is still a challenge. Here, a double-heterojunction photodetector (PD) by coupling two-dimensional PtSe2 thin film with a graphene/silicon Schottky junction is proposed. The introduction of PtSe2 enhances the built-in electric field of the device, thus suppressing the dark-state current and promoting the separation of photogenerated electron-hole pairs. Under 808 nm laser illumination, the PtSe2/graphene/Si PD exhibits an optimal responsivity, specific detectivity, and response speed of 0.81 A W-1, 1.24 × 109 Jones, and 43.6/51.2 μs, respectively. These performance indexes are obviously better than the corresponding graphene/Si device. Furthermore, the PtSe2/graphene/Si PD has good environmental durability and photoresponse ability from the ultraviolet to near-infrared. This work will provide new possibilities for designing novel silicon-based photodetection devices with high performance and fast response.

Reliability and Process Scalability of TiO2/Porous Silicon-Based Broadband Photodetectors

Reliability and Process Scalability of TiO₂/Porous Silicon-Based Broadband Photodetectors

High-Responsivity and Broadband MoS2 Photodetector Using Interfacial Engineering.

Combining MoS2 with mature silicon technology is an effective method for preparing high-performance photodetectors. However, the previously studied MoS2/silicon-based heterojunction photodetectors cannot simultaneously demonstrate high responsivity, a fast response time, and broad spectral detection. We constructed a broad spectral n-type MoS2/p-type silicon-based heterojunction photodetector. The SiO2 dielectric layer on the silicon substrate was pretreated with soft plasma to change its thickness and surface state. The pretreated SiO2 dielectric layer and the silicon substrate constitute a multilayer heterostructure with a high carrier concentration and responsiveness. Taking silicon-based and n-type MoS2 heterojunction photodetectors as examples, its responsivity can reach 4.05 × 104 A W1- at 637 nm wavelength with a power density of 2 μW mm-2, and the detectable spectral range is measured from 447 to 1600 nm. This pretreated substrate was proven applicable to other n-type TMDCs, such as MoTe2, ReS2, etc., with certain versatility.

Study on the luminescence properties of the Eu3+ and Tb3+ dual-doped fluorophosphate glasses for UV sensitization detection

In this article, NaPO3-BaF2-AlF3-CaF2 glasses doped with Eu3+ and Tb3+ were manufactured by conventional melt-quenching method, and they showed good physical properties throughout various measurements: density, refractive index, Raman scattering, and X-ray diffraction (XRD). Basing on Judd-Ofelt theory, the Ω2/4/6 values were calculated. The higher Ω2 values of the Eu3+-doped fluorophosphate glasses indicate a highly polarized environment around Eu3+ ions. Accompanying with the Eu3+ and Tb3+ dual-doped glass, it showed that the response of excitation absorption extended by whole UVA region. This phenomenon was explained by the energy transferring between Eu3+ and Tb3+. Combining the dual-doped glass with silicon-based photodetectors, the spectral response of the detectors in the UVA region was improved up to 20%.

Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and Silicon Interface.

Silicon-based photodetectors are attractive as low-cost and environmentally friendly optical sensors. Also, their compatibility with complementary metal-oxide-semiconductor (CMOS) technology is advantageous for the development of silicon photonics systems. However, extending optical responsivity of silicon-based photodetectors to the mid-infrared (mid-IR) wavelength range remains challenging. In developing mid-IR infrared Schottky detectors, nanoscale metals are critical. Nonetheless, one key factor is the Fermi-level pinning effect at the metal/silicon interface and the presence of metal-induced gap states (MIGS). Here, we demonstrate the utilization of the passivated surface layer on semiconductor materials as an insulating material in metal-insulator-semiconductor (MIS) contacts to mitigate the Fermi-level pinning effect. The removal of Fermi-level pinning effectively reduces the Schottky barrier height by 12.5% to 16%. The demonstrated devices exhibit a high responsivity of up to 234 μA/W at a wavelength of 2 μm, 48.2 μA/W at 3 μm, and 1.75 μA/W at 6 μm. The corresponding detectivities at 2 and 3 μm are 1.17 × 108 cm Hz1/2 W-1 and 2.41 × 107 cm Hz1/2 W-1, respectively. The expanded sensing wavelength range contributes to the application development of future silicon photonics integration platforms.

Photovoltaic high-performance broadband photodetector based on the heterojunction of MoS2/silicon nanopillar arrays

Two-dimensional MoS2 has shown great potential in the photoelectric field because of its excellent optical and electrical properties. However, the performance of MoS2-based planar photodetector is constrained by the short transmission path and limited light absorption capacity of the planar thin layer of MoS2. In this paper, highly sensitive MoS2/silicon nanopillar arrays(Si-NPAs) photodetector by coating the surface of silicon nanotrap light array with MoS2. The interaction between light waves and silicon nanopillars and MoS2 is significantly enhanced by the Fabry-Pérot-enhanced Mie resonance between pillars as well as the multiple reflection. In the meantime, a Van der Waals heterojunction is constructed between the MoS2 and Si-NPAs coated across a large area. This is beneficial to address the poor performance of traditional two-dimensional photodetectors in light absorption and prevent the surface recombination of silicon-based photodetectors. According to the research results,the detector has 4.15 × 102 excellent rectification characteristics and 1.93 × 103 high switch ratio, and the photovoltaic effect is significant. The average external quantum efficiency of MoS2/Si-NPAs photodetector is 61.2% in the visible and near infrared bands, which is twice that of MoS2/planar silicon photodetector. At 850 nm, the responsiveness of the MoS2/Si NPAs photodetector is 0.48 A/W. the detection rate reaches 1.058 × 1012cm·Hz 1/2 W−1, which is 10.7 times higher than that of MoS2/planar silicon photodetector. To sum up, this study contributes a fresh idea to the design and application of high-performance devices.

Near-Infrared Emitting of Zero-Dimensional Europium(II) Halide Scintillators: Energy Transfer Engineering via Sm2+ Doping

Near-infrared (NIR)-emitting scintillators, coupled with high quantum efficiency silicon-based photodetectors, have emerged as a promising solution for highly efficient radiation detection applications. However, the study of efficient NIR-emitting scintillators and their associated luminescence mechanism is still limited. In this work, we developed NIR-emitting zero-dimensional Cs4EuBr6 halide scintillators via Sm2+ doping. Single crystals of Cs4EuBr6 with varying Sm2+ concentrations were grown by the vertical Bridgman method. Under X-ray irradiation, the scintillation emission of highly Sm-doped Cs4EuBr6 single crystals is dominated by the Sm2+ 5d–4f emission peaking at 831 nm with a weak Eu2+ 5d–4f emission peaking at 443 nm. The energy transfer processes between Eu2+ and Sm2+ were investigated by using photoluminescence (PL) spectra, PL decay kinetics, and soft X-ray excited decay kinetics measurements. Based on the temperature-dependent PL decay results, we constructed a configurational coordinate diagram of Sm2+ in the Cs4EuBr6 host. Furthermore, we evaluated the gamma spectroscopy response of Cs4EuBr6:Sm single crystals using an avalanche photodiode detector known for its high sensitivity in the NIR wavelength region.

Modified luminescent properties from green afterglow to efficient orange emission in zirconium-based organometallic chloride scintillator by Sb3+ doping

Zero-dimension (0D) metal halides based on metals with the 5s2 lone pair have attracted great attentions due to their strong triplet broadband emission. However, the conversion from weak afterglow to efficient and fast photoluminescence by regulating the composition of 0D metal halides is still a tough challenge. Herein, Sb3+ ions-doped 0D (Ph4P)2ZrCl6·4CH3CN metal halides were synthesized by a simple solution crystallization method. Compared with the weak triplet green 560 nm afterglow from the organic Ph4P+ components, the emission of the Sb3+-doped material exhibits a strong orange photoluminescence at 660 nm with a high photoluminescence quantum yield of 72% by a host to dopant energy transfer process. In addition, a flexible large-sized X-ray scintillator screen with an area of 16 cm2 was prepared using polydimethylsiloxane as the host matrix, which exhibits excellent scintillation properties with light yields of 8,290 photons/MeV, low detectable limits of 0.986 μGy/s, and a near-infrared broadband emission from 600 nm to 850 nm under steady-state X-ray excitation, which is highly compatible with the response range of the long-wave sensitive silicon-based photodetectors. Therefore, this work not only provides a deep insight into the energy transfer process in the 0D metal halide materials but also opens an alternative approach to realize flexible large-size near-infrared X-ray imaging based on the 0D metal halide scintillator.

CuSCN/Si heterojunction near-infrared photodetector based on micro/nano light-trapping structure

In this paper, high-performance CuSCN/Si heterojunction near-infrared photodetectors were successfully prepared using nanoscale light-trapping optical structures. Various light-trapping structures of ortho-pyramids, inverted pyramids and silicon nanowires were prepared on silicon substrates. Then, CuSCN films were spin-coated on silicon substrates with high crystalline properties for the assembly of CuSCN/Si photodetectors. Their reflectance spectra and interfacial passivation properties were characterized, demonstrating their superiority of light-trapping structures in high light response. Under the irradiation of 980 nm near-infrared light, a maximum responsivity of 2.88 A W−1 at −4 V bias and a specific detectivity of 5.427 × 1010 Jones were obtained in the CuSCN/Si heterojunction photodetectors prepared on planner silicon due to 3.6 eV band gap of CuSCN. The substrates of the light-trapping structure were then applied to the CuSCN/Si heterojunction photodetectors. A maximum responsivity of 10.16 A W−1 and a maximum specific detectivity of 1.001 × 1011 Jones were achieved under the 980 nm near-infrared light irradiation and −4 V bias, demonstrating the advanced performance of CuSCN/Si heterojunction photodetectors with micro-nano light-trapping substrates in the field of near-infrared photodetection compared to other silicon-based photodetectors.

Monolithic heterogeneous integration of Si photodetector and Van der Waals heterojunction with photocurrent enhancement

Two-dimensional material has many novel features, which can be used to significantly improve the performance of traditional photonic and electronic devices. Therefore, the development of silicon/two-dimensional material monolithic heterogeneous integrated photodetector has attracted extensive attention worldwide. In this paper, we present a method to enhance the response of photocurrent of silicon-based PN junction photodetectors by using two-dimensional material Van der Waals heterostructures. The MoS2/graphene/N+ silicon monolithic heterogeneous integrated Van der Waals heterostructure is used as an NPN-type phototransistor to realize the amplification of photocurrent. When the device is irradiated, the photogenerated electron hole pairs in the semiconductor are separated by the applied electric field. However, graphene has a low density of defect states, and only a few electrons from N+ silicon can be recombined in graphene. Meanwhile, the graphene layer is very thin, and the positively biased graphene/N+ silicon junction and reversed-biased MoS2/graphene junction will accelerate the electrons to across the graphene layer and directly into MoS2. Using MXenes as the contact electrode of the MoS2 can eliminate the Fermi level pinning effect. The experimental results show that the photoresponsivity and photocurrent gain increase with the bias voltage, in the range of 0 to 5 V bias voltage. And the optical Ion/Ioff ratio increases by nearly 50 times. This research provides new insights for the detection of weak light and design for the photon computing device.

Pyro-Phototronic Effect Enhanced Pyramid Structured p-Si/n-ZnO Nanowires Heterojunction Photodetector.

The emergence of nanomaterials has brought about the development of miniature photodetectors into a new stage, and ZnO nanomaterials are currently one of the most popular research objects. Here, the performance of a photodetector consisting of micropyramid structured p-Si/n-ZnO NWs heterojunction constructed by an anisotropic chemical etching and hydrothermal method is optimized by using the pyro-phototronic effect, and the photoresponses of the device to 405 and 648 nm lasers are investigated. The results show that, with the introduction of pyro-phototronic effect, the photoresponsivity Rpyro increases to 208 times that of Rphoto when the wavelength is 405 nm and the optical power density is 0.0693 mW/cm2. Moreover, with the increase of the chopper frequency, the photocurrent increases by more than 3 times, and the photoresponsivity is also increased by a factor of 4.5, making it possible to detect ultrafast pulsed light. In addition, in order to increase the current collection efficiency, a thin film Al layer was deposited as the back electrode on the basis of the device, and the photocurrent and photoresponsivity are significantly improved. Finally, the coupling between the pyro-phototronic effect and the piezo-phototronic effect is analyzed by applying compressive strain to the photodetector. When the compressive strain is -1.02%, the photocurrent decreases by 31.4% and the photoresponsivity decreases by 27.9% due to the opposite direction between laser illumination induced pyroelectric polarization charges and compressive strain induced piezoelectric polarization charges. This work not only demonstrates the great potential of pyro-phototronic effect in enhancing the silicon-based heterojunction photodetectors for high-performance photodetection and ultrafast pulsed light detection but also provides assistance for a better understanding of the coupling mechanism between pyro-phototronic and piezo-phototronic effects.

Surface Engineering in SnO2/Si for High-Performance Broadband Photodetectors

Silicon-based photodetectors are important optoelectronic devices in many fields. Many investigations have been conducted to improve the performance of silicon-based photodetectors, such as spectral responsivity and sensitivity in the ultraviolet band. In this study, we combine the surface structure engineering of silicon with wide-bandgap semiconductor SnO2 films to realize textured Si-based heterojunction photodetectors. The obtained SnO2/T-Si photodetectors exhibit high responsivity ranging from ultraviolet to near-infrared light. Under a bias voltage of 1 V, SnO2/T-Si photodetectors (PDs) with an inverted pyramid texture show the best performance, and the typical responsivities to ultraviolet, visible, and near-infrared light are 0.512, 0.538, 1.88 (800 nm, 67.7 μW/cm2) A/W@1 V, respectively. The photodetectors exhibit short rise and decay times of 18.07 and 29.16 ms, respectively. Our results demonstrate that SnO2/T-Si can serve as a high-performance broadband photodetector.

Near-infrared photodetectors based on embedded graphene

In last years, the introduction of 2-dimensional materials such as graphene has revolutionized the world of silicon photonics. In this work, we demonstrate a new approach for integrating graphene into silicon-based photodetectors. We leverage a thin film of hydrogenated amorphous silicon to embed the graphene within two different photonic structures, an optical Fabry-Pérot microcavity, and a waveguide, achieving a stronger light-matter interaction. The investigated devices have shown promising performance resulting in responsivities as high as 27 mA/W and 0.15 A/W around 1550 nm, respectively.

Research progress of silicon nanowires array photodetectors

As one of the most important semiconductor materials, silicon (Si) is widely used in optoelectronic devices such as solar cells and photodetectors. Owing to the difference in refractive index between silicon and air, a large amount of incident light is reflected back into the air from the silicon surface. In order to suppress the loss caused by this reflection, a variety of silicon nanostructures with strong trapping effect have been developed. Most of the dry-etching schemes encounter the problems of high cost and complex preparation, while the silicon nanowires array prepared by the wet-etching schemes has the problems of low controllability of some parameters such as the spacing between two adjacent nanowires, and the small effective area of heterojunction. The method of using polystyrene microsphere as the mask can integrate the advantages of dry-etching method and wet-etching method, and it is easy to obtain periodic silicon nanowires (pillars) array. In this paper, first, we summarize the properties and preparation methods for silicon nanowires structure, the strategies to effectively improve the performance of silicon nanowires (pillars) array photodetectors, Then we analyze the existing problems. Further, the latest developments of silicon nanowires (pillars) array photodetector are discussed, and the structure, morphology of photosensitive layer and methods to improve the performance parameters of silicon nanowires (pillars) array photodetector are analyzed. Among them, we focus on the ultraviolet light sensitive silicon based photodetector and its method to show tunable and selective resonance absorption through leaky mode resonance, the silicon nanowires array photodetector modified with metal nanoparticles and the method of improving performance through surface plasmon effect, and plasmon hot electrons. Heterojunction photodetectors composed of various low-dimensional materials and silicon nanowires (pillars) array, and methods to improve the collection efficiency of photogenerated charge carriers through the “core/shell” structure, methods to expand the detection band range of silicon-based photodetectors by integrating down-conversion light-emitting materials and silicon nanowires (pillars) array, flexible silicon nanowires array photodetectors and their various preparation methods, are all introduced. Then, the main problems that a large number of defect states will be generated on the silicon nanostructure surface in the MACE process are briefly introduced, and several possible solutions for defect passivation are also presented. Finally, the future development for silicon nanowires (pillars) array photodetectors is prospected.

Performance Enhancement of Silver Nanowire-Based Transparent Electrodes by Ultraviolet Irradiation.

Silver nanowires (AgNWs) are used as transparent electrodes (TE) in many devices. However, the contact mode between the nanowires is the biggest reason why the sheet resistance of silver nanowires is limited. Here, simple and effective ultraviolet (UV) irradiation welding is chosen to solve this problem. The influence of the power density of the UV irradiation on welding of the silver nanowires is studied and the fixed irradiation time is chosen as one minute. The range of the UV (380 nm) irradiation power is chosen from 30 mW/cm2 to 150 mW/cm2. First of all, the transmittance of the silver nanowire film is not found to be affected by the UV welding (400–11,000 nm). The sheet resistance of the silver nanowires decreases to 73.9% at 60 mW/cm2 and increases to 127.6% at 120 mW/cm2. The investigations on the UV irradiation time reveal that the sheet resistance of the AgNWs decreases continuously when the UV irradiation time is varied from 0 to 3 min, and drops to 57.3% of the initial value at 3 min. From 3–6 min of the continuous irradiation time, the change of the sheet resistance is not obvious, which reflects the self-limiting and self-termination of AgNWs welding. By changing the wavelength of the UV irradiation from 350–400 nm, it is found that the welding effect is best when the UV wavelength is 380 nm. The average transmittance, square resistance, and the figure of merit of the welded AgNWs at 400–780 nm are 95.98%, 56.5 Ω/sq, and 117.42 × 10−4 Ω−1, respectively. The UV-welded AgNWs are also used in silicon-based photodetectors, and the quantum efficiency of the device is improved obviously.

Efficient quantum cutting of lanthanum and ytterbium ions co-doped perovskite quantum dots towards improving the ultraviolet response of silicon-based photodetectors

High-efficiency quantum cutting materials have great application prospects in improving the photoelectric conversion efficiency of silicon-based photoelectric devices. Herein, La3+ and Yb3+ ions co-doped CsPbCl3 perovskite quantum dots (PQDs) were prepared successfully via the modified hot-injection method. La3+ and Yb3+ ions codoping makes the PLQY of CsPbCl3 PQDs increase from 5% to 168%. This is because Yb3+ ions doping makes the effective quantum cutting process happen, as well as La3+ ions doping effectively reduces non-radiative transition in CsPbCl3 PQDs and further improves the quantum cutting efficiency. Finally, La3+ and Yb3+ ions co-doped CsPbCl3 PQDs film were integrated on silicon-based photodetectors. The spectral range of silicon-based photodetectors is extended to the ultraviolet (UV) region (200–400 nm) besides the visible spectral region. The external quantum efficiency (EQE) is around 67%, and the responsivity is 0.14 A/W, which is comparable to the highest value previously reported. This work provides a new strategy to improve the quantum cutting efficiency and the performance of silicon-based photodetectors.