Diffusion bonding is a process that has proven effective for the joining of metal to ceramic, but the differences in coefficient of thermal expansion still pose challenges during and after the bonding process. This work details the exploration of traditional diffusion-bonding processes using two traditional approaches, which include bonding of a 99.9+% pure Ni foil to SiC, Si3N4, and YSZ disks using (1) a hot isostatic press (HIP), with and without added weight to promote interfacial contact, and (2) field-assisted sintering (FAST). Samples were consolidated by heating to 1200 °C and held for 6 h under vacuum before cooling to room temperature during the HIP method. For the FAST technique, bonding experiments were performed at both 800 °C and 1200 °C in a vacuum environment under 10 MPa uniaxial pressure. After the Ni was bonded to the ceramics, diffusion heat treatments were carried out in the HIP. For electroless-plated samples, the heat-treatment temperature was chosen as 825 °C to avoid melting. For electroplated samples, heat treatment occurred at 925 °C or higher. Electroplated YSZ samples were heat-treated at 1150 °C as the Ni-Si eutectic is not a concern in this system. The time at temperature varied from 6 h to 48 h depending on the material combination tested. Post-heat-treatment diffusion characteristics were analyzed using scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS). A main cause of poor bonding performance in the HIP samples was reduced interfacial contact, while cohesive failures in the FAST samples are likely due to the formation of brittle intermetallic Ni-Si phases. Preliminary results indicate success in bonding Ni to SiC, Si3N4, and YSZ using a diffusion-enhanced approach on electroplated specimens.