Si Slot Waveguide Research Articles

Sub-ppm Methane Detection with Mid-Infrared Slot Waveguides.

Hybrid integration of photonic chips with electronic and micromechanical circuits is projected to bring about miniature, but still highly accurate and reliable, laser spectroscopic sensors for both climate research and industrial applications. However, the sensitivity of chip-scale devices has been limited by immature and lossy photonic waveguides, weak light-analyte interaction, and etalon effects from chip facets and defects. Addressing these challenges, we present a nanophotonic waveguide for methane detection at 3270.4 nm delivering a limit of detection of 0.3 ppm, over 2 orders of magnitude lower than the state-of-the-art of on-chip spectroscopy. We achieved this result with a Si slot waveguide designed to maximize the light-analyte interaction, while special double-tip fork couplers at waveguide facets suppress spurious etalon fringes. We also study and discuss the effect of adsorbed humidity on the performance of mid-infrared waveguides around 3 μm, which has been repeatedly overlooked in previous reports.

Numerical analyses of optical loss and modulation bandwidth of an InP organic hybrid optical modulator

We numerically analyzed the modulation characteristics of an InP organic hybrid (IOH) optical modulator consisting of an InP slot waveguide and an electro-optic (EO) polymer. Since InP has a higher electron mobility and a lower electron-induced free-carrier absorption than Si, the series resistance of an InP slot waveguide can be significantly reduced with relatively smaller optical loss than an Si slot waveguide. As a result, the trade-off between optical loss and modulation bandwidth can be remarkably improved compared with a Si organic hybrid (SOH) optical modulator. When the modulation bandwidth was designed to be 100 GHz, the optical loss of the IOH modulator was 13-fold smaller than that of the SOH one. The simulation of the eye diagram revealed that the improved optical modulation amplitude enabled the clear eye opening with a 100 Gbps non return-to-zero signal using the IOH modulator. The IOH integration is promising for a high-speed modulator with low energy consumption beyond 100 Gbps.

3 × 3 slot waveguide crossing based on Maxwell’s fisheye lens

Intersection of two or more silicon slot waveguides is inevitable in modern optical integrated circuits based on silicon on insulator (SOI) platform. In this article, we design a Maxwell's fisheye lens as the crossing medium for three Si slot waveguides and numerically investigate its characteristics such as insertion loss, crosstalk and bandwidth. For the 3$\times$3 slot waveguide crossing, the average insertion loss of 1.2 dB and crosstalk levels lower than -15.1 dB are achieved in an ultra-wideband wavelength range of 415 nm covering the entire O, E, S, C, L, and U bands of optical communications. The footprint of the 3$\times$3 silicon slot waveguide crossing presented in this article is merely 2$\times$2 $\mu m^2$ which is considerably smaller compared to the previously designed Si slot waveguide crossings even with fewer number of ports. The proposed design can be expanded to support the intersection of more slot waveguides.

Integration of Carbon Nanotubes in Silicon Strip and Slot Waveguide Micro-Ring Resonators

Silicon photonics has emerged as a very promising technology platform for the implementation of high-performance, low-cost, ultra-compact circuits that can monolithically cointegrate electronic, opto-electronic and optic functionalities. However, Si neither has efficient light emission or detection in the telecom wavelength range, nor exhibits efficient electro-optic Pockels effect, hindering the implementation of integrated active devices like sources, detectors, or modulators. Current approaches relay on different materials to provide active functionalities in Si photonics, resulting in highly complex integration schemes that compromise cost-effectiveness. Semiconducting single-wall carbon nanotubes (SWNTs) are capable of emitting and detecting near-infrared light at room temperature and exhibit intrinsically fast electro-optic effects. They have also proven promising uses in micro-electronic devices, making them an ideal material to provide active functionalities in the Si photonic platform. In this work, we propose and experimentally validate the possible use of slot photonic waveguides to improve interaction between SWNTs and Si waveguide modes. Fabricated Si slot micro-ring shown an experimental similar to 60% photo-luminescence improvement compared to previous demonstration based on Si strip waveguide resonators. These results prove the potential of Si slot waveguides for the implementation of efficient SWNT-based Si photonic devices.

Optimization of Si slot waveguide using approximate semi-analytical method.

The optimization of a slot waveguide for any specific application requires a study of the modal characteristics for a wide range of design parameters. Rigorous numerical methods, such as the finite element method (FEM), are time consuming and require a large amount of memory. In this paper, a simple semi-analytical method is used to analyze silicon slot waveguides and to optimize the performance of the waveguide for maximum power confinement in the slot, minimum effective mode area of the slot and to obtain flat dispersion characteristics. The results obtained by the present method agree well with the rigorous numerical results.

Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides

Electrically driven Er(3+) doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er(3+) doped active layers were fabricated in the slot region: a pure SiO(2) and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er(3+) ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators.

Athermal Wavelength Filters toward Optical Interconnection to LSIs

Photonic integrated circuits (PICs) produced by large-scale integration (LSI) on Si platforms have been intensively researched. Since thermal diffusion from the LSI logic layer is a serious obstacle to realizing a Si-based optical integrated circuit, we have proposed and realized athermal wavelength filters using Si slot waveguides embedded with benzocyclobutene (BCB). First, the athermal conditions were theoretically investigated by controlling the waveguide and gap width of the slot waveguides. In order to introduce the calculated waveguide structures to wavelength filters, the propagation losses and bending losses of the Si slot waveguides were evaluated. The propagation losses were measured to be 5.6 and 5.3dB/cm for slot waveguide widths of 500 and 700nm, respectively. Finally, athermal wavelength filters, a ring resonator, and a Mach-Zhender interferometer (MZI) with a slot waveguide width of 700nm were designed and fabricated. Further, a temperature coefficient of -0.9pm/K for the operating wavelength was achieved with the athermal MZI.

Design of temperature-independent arrayed waveguide gratings based on the combination of multiple types of waveguide

We develop a design theory for a temperature-independent arrayed waveguide grating (TI-AWG) based on the combination of multiple types of waveguide. Each type of waveguide has a path-length difference between adjacent arrayed waveguides, and the path-length difference ratio is introduced as tuning parameter. A TI-AWG with Si wire and slot waveguides is given as an example. The thermal spectra shift of the TI-AWG can be tuned from redshift to blueshift in an ultralarge range, and the modified interference order can be reduced or enhanced. The device size is about one-fifth that of the narrow-wide-wire design that uses a combination of narrow and wide Si wire waveguides. The results are verified by the simulation of prototype devices via a two-dimensional finite-difference time-domain program.

Athermal Wavelength Characteristics of Si Slot Ring Resonator Embedded with Benzocyclobutene for Optoelectronic Integrated Circuits

An athermal Si-slot-waveguide ring resonator embedded with benzocyclobutene (BCB), a low-k material used in electronics, was proposed. By controlling the width of the BCB-filled gap to 90 nm, the temperature coefficient of equivalent index of a Si slot waveguide could be reduced to 3.70×10-6, which is two orders of magnitude smaller than that of a conventional Si waveguide. The dependences of peak wavelength shift on temperature in the fabricated devices of a conventional Si wire waveguide with SiO2 cladding, Si wire waveguide with BCB cladding, and Si slot waveguide with BCB cladding were 26, 17, and -0.6 pm/K, respectively.

Wafer-bonded single-crystal silicon slot waveguides and ring resonators

We fabricated horizontal Si slot waveguides with a 25 nm SiO2 slot layer by bonding thin Si-on-insulator wafers. After removing the Si substrate and buried oxide from one side of the bonded structure, grating-coupled waveguides and ring resonators were partially etched into the Si/SiO2/Si device layers. The gratings exhibit efficiencies of up to 23% at 1550 nm and the ring resonators were measured to have loaded quality factors near 42 000 for the lowest-order transverse-electric mode, corresponding to a propagation loss of 15 dB/cm. The leaky lowest-order transverse-magnetic mode was also observed with a propagation loss of 44 dB/cm.