Si Metasurface Research Articles

Full-Stokes polarization mid-wave infrared photodetector based on the polarization-converting metasurface

It is very challenging to achieve direct capture of the circular polarization due to the complex mechanism of the chiral materials. We numerically demonstrate a circular polarization photodetector composed of the silicon (Si) metasurfaces rotated 45° clockwise presenting as the phase delayer and the grating-coupled quantum well infrared photodetectors (QWIP) chip detecting the transverse magnetic (TM) mode. The circular dichroism and extinction ratio of the circular polarization (CP) photodetector are 0.25 and 20 dB at 4 μm operation wavelength, respectively. In addition, the linear dichroism (LD) and extinction ratios (ER) of the linear polarization device are 0.22 and 60 dB, respectively. The excellent LD performance is caused by the Fano resonance of the Si/SiO2 linear grating corresponding to the interference of the bright electric dipole mode and the dark electric quadrupole mode. The full Stokes pixel of the six-image-element technique can almost accurately obtain arbitrary polarized light at 4 μm operation wavelength. The errors of the degree of linear polarizations (Dolp) and the degree of circular polarizations (Docp) are less than −30 dB and −20 dB, respectively.

Polarization control of lasing from few-layer MoTe2 coupled with the optical metasurface supporting quasi-trapped modes

The development of technology for integrating optical metaresonators with two-dimensional and layered van der Waals (vdW) materials opens up broad prospects for the creation of subdiffraction concentrators of electromagnetic energy, surface-emitting lasers, laser displays, and highly efficient nonlinear converters. In this work, we develop a straightforward strategy for the design and fabrication of surface-emitting laser devices based on few-layer transition metal dichalcogenides placed on the dielectric metasurfaces in the regime of quasi-trapped mode excitation. We optimize the parameters of MoTe2 flake and Si metasurface to achieve a positive feedback and to observe the lasing, resulting from their integration, with the predicted characteristics. Promising potential for the development of vdW-metalaser platform is associated with the possibility of simple polarization control of lasing regimes by employing the features of the bianisotropic response of the metasurface's building blocks.

Si metasurface supporting multiple quasi-BICs for degenerate four-wave mixing

Abstract Dielectric metasurfaces supporting quasi-bound states in the continuum (qBICs) enable high field enhancement with narrow-linewidth resonances in the visible and near-infrared ranges. The resonance emerges when distorting the meta-atom’s geometry away from a symmetry-protected BIC condition and, usually, a given design can sustain one or two of these states. In this work, we introduce a silicon-on-silica metasurface that simultaneously supports up to four qBIC resonances in the near-infrared region. This is achieved by combining multiple symmetry-breaking distortions on an elliptical cylinder array. By pumping two of these resonances, the nonlinear process of degenerate four-wave mixing is experimentally realized. By comparing the nonlinear response with that of an unpatterned silicon film, the near-field enhancement inside the nanostructured dielectric is revealed. The presented results demonstrate independent geometric control of multiple qBICs and their interaction through wave mixing processes, opening new research pathways in nanophotonics, with potential applications in information multiplexing, multi-wavelength sensing and nonlinear imaging.

All-silicon multidimensionally-encoded optical physical unclonable functions for integrated circuit anti-counterfeiting

Integrated circuit anti-counterfeiting based on optical physical unclonable functions (PUFs) plays a crucial role in guaranteeing secure identification and authentication for Internet of Things (IoT) devices. While considerable efforts have been devoted to exploring optical PUFs, two critical challenges remain: incompatibility with the complementary metal-oxide-semiconductor (CMOS) technology and limited information entropy. Here, we demonstrate all-silicon multidimensionally-encoded optical PUFs fabricated by integrating silicon (Si) metasurface and erbium-doped Si quantum dots (Er-Si QDs) with a CMOS-compatible procedure. Five in-situ optical responses have been manifested within a single pixel, rendering an ultrahigh information entropy of 2.32 bits/pixel. The position-dependent optical responses originate from the position-dependent radiation field and Purcell effect. Our evaluation highlights their potential in IoT security through advanced metrics like bit uniformity, similarity, intra- and inter-Hamming distance, false-acceptance and rejection rates, and encoding capacity. We finally demonstrate the implementation of efficient lightweight mutual authentication protocols for IoT applications by using the all-Si multidimensionally-encoded optical PUFs.

A triple Fano resonance Si-graphene metasurface for multi-channel tunable ultra-narrow band sensing.

In this work, a dielectric metasurface composed of a silicon nanodisk etched with a square hole is proposed. By introducing C4v symmetry breaking, the symmetry-protected bound states in the continuum (SP-BIC) is transformed into a quasi-BIC (Q-BIC), simultaneously inducing triple Fano resonances in the near-infrared light band corresponding to one dipole and two Q-BIC resonances. The characteristics of Q-BIC resonances are elucidated through multipole decomposition and near-field distribution analysis. Subsequently, monolayer graphene is integrated into the Si metasurface. The light field in the composite metasurface can be flexibly modulated by changing the Fermi level of graphene. This modulation enables optimal transmission with an enhancement of up to 252%, while the confined electromagnetic energy experiences a remarkable increase of about 1020%. Simulation results demonstrate that the Si-graphene composite metasurface exhibits a high refractive index sensitivity of 162 nm RIU-1, accompanied by a figure of merit of 170.526 RIU-1. This composite metasurface holds promise as a high-performance sensor in the near-infrared band and has potential for application in the fields of active tunable optical devices and biochemical sensing.

Absorption modulation of quasi-BIC in Si–VO2 composite metasurface at near-infrared wavelength

Bound states in the continuum (BIC) have attracted great attention in nanophotonics in the past few years. The metasurface with inverted symmetry breaking exhibits high Q resonance through quasi-BIC (Q-BIC), which realizes light modulation, sensing and nonlinear generation. In this work, a symmetry-broken Si–VO2 composite metasurface is studied and modulate near-infrared light absorption in Q-BIC mode. First, a L-shaped Si metasurface with broken C4v symmetry is designed, which realizes the transition from BIC to Q-BIC and shows strong circular dichroism. Later, phase-change material VO2 is integrated into the L-shaped Si metasurface. By changing the ambient temperature, the Si–VO2 composite metasurface shows distinct light absorption characteristics, including insensitivity to incident angle and a maximum absorption modulation of up to 210%. The results show that VO2 can effectively modified Q-BIC resonator to realize the modulation absorption of near-infrared light.

Full-Stokes polarization photodetector based on the hexagonal lattice chiral metasurface.

A hexagonal lattice silicon (Si) metasurface formed by the displacement of two mirrored isosceles trapezoid blocks in opposite directions is integrated into an InGaAs/InP photodetector to sense the circularly polarized light, whose optical properties mainly are controlled by the Fabry-Pérot (FP) cavity mode supported in the air slit called the Tunnel A. The Si metasurface can also be equivalent to the combination of the electric quadrupole (EQ) and the magnetic quadrupole (MQ) for the right circularly polarized (RCP) mode and the magnetic quadrupole for the left circularly polarized (LCP) mode. The external quantum efficiency of the circular polarization photodetectors is 0.018 and 0.785 for the RCP and LCP incidence, respectively. In addition, the full Stokes pixel based on the six-image-element technique can almost accurately measure arbitrary polarized light at 1550 nm operation wavelength, whose errors of the degree of linear polarizations (Dolp) and the degree of circular polarizations (Docp) are less than 0.01 and 0.15, respectively.

Dynamic tuning of optical absorbance and structural color of VO2-based metasurface

Abstract Vanadium dioxide (VO2) is an attractive thermal-control material exhibiting low thermal hysteresis and excellent temperature cycling performance. However, the deficiencies including weak spectral shift and narrow-band absorption during insulating-metallic transitions hinder its application in optoelectronics. The transition metal dichalcogenides (TMDs) can provide a promising solution with their high dielectric properties and robust optical coupling. Here, we report a MoS2/VO2/Au/Si metasurface and investigate the dynamic tunability of its optical absorbance and structural color upon heating via spectroscopic ellipsometry measurements and numerical simulations. The first-principles calculations reveal that the dielectric absorptions of metallic and insulating VO2 oppositely response to temperature, closely related to the difference in the transitions of O-2p states. Finite-element simulations reveal that the introduction of MoS2 nanostructure induces more absorption peaks by 2∼3 and achieves strong absorption in the full wavelength range of visible light. The Fabry–Perot (F–P) resonance is the critical factor for the optimized optical absorption. The structural color is sensitive to environmental perturbations at high-ε state of VO2, lower oblique incidence angles, and heights of MoS2. This work seeks to facilitate the spectral modulation of phase change metamaterials and can be extended to photoelectric detection and temperature sensing applications.

Nonlinear Chiral Metasurfaces Based on the Optical Kerr Effect

AbstractChiral nanostructures have immense potential for complete polarization control of light. Given the intrinsic 3D structure of circularly polarized light, nanoarchitectures with structural chirality in 3D space are usually required to achieve “full” chiroptical response. On the other hand, due to the lack of available active materials at optical wavelengths, examples of chiral photonic devices that can be tuned in an active manner remain rare. Here, based on the large Kerr nonlinearities of silicon, the nonlinear chiroptical response from a planar Si metasurface supporting high quality (Q)‐factor guided mode resonances (GMRs) at near‐infrared wavelengths, are numerically demonstrated. In the linear regime, the optical anisotropy of the C2‐symmetric structure associated with the observed GMRs leads to a pair of chiral resonance modes, enabling pronounced cross‐polarization transmission circular dichroism and a strong handedness‐dependent field enhancement effect. Owing to the nonlinear Kerr effect, such Si metasurfaces are seen to exhibit prominent chiral‐selective optical nonlinearity. Importantly, a pronounced co‐polarization transmission circular dichroism is observed, suggesting that the circularly polarized waves in the nonlinear regime possess asymmetric Jones matrices. Dielectric chiral metasurfaces with Kerr nonlinearities can be utilized to facilitate polarization‐state modulators with simple planar structures.

On the Laser Generation in Two-Dimensional Materials with Pumping by Quasitrapped Modes

A model has been proposed to describe the laser generation of two-dimensional semiconductor films with near-field pumping by quasitrapped modes excited in dielectric metasurfaces. A metastructure consisting of a Si metasurface coated with a MoTe2 film, where narrow-band resonance of a quasitrapped mode is joined with a broad exciton resonance of a two-dimensional material, has been designed. Threshold conditions for generation in the MoTe2 film with pumping by quasitrapped modes have been determined. The possibility of polarization control of the emission of the proposed metastructure has been demonstrated.

Spin‐Decoupled Beam Steering with Active Optical Chirality Based on Terahertz Liquid Crystal Chiral Metadevice

AbstractBroadband terahertz (THz) chirality and wavefront manipulation play important roles in wireless communication, imaging, and radar systems. In this work, by integrating liquid crystal (LC) into a dielectric metasurface, the gradient phase distribution from the Si metasurface and the tunable birefringent phase shift from LC are engineered to perform an active spin‐decoupled beam steering with the strong spin asymmetric transmission. By using geometric symmetry analysis, the relationships between the symmetry breaking and the optical chirality of the metadevice are revealed under different LC orientations, and both the simulations and experiments further verify the dependence of this chirality on spin‐decoupled beam steering with different spin states. The results show that with the orientation changes of the LC by driving the different magnetic fields, the circular dichroism of the device at the 0° deflection angle is ≈100% dynamically modulated and even flipped in the broadband range of 0.8–1.3 THz. With these changes in THz chirality, a tunable spin‐decoupled beam steering occurs in the range of 25°‐45°. This work shows that tunable LC anisotropy leads to more complex symmetry breaking in this structure, and results in more functions than conventional spin‐decoupled wavefront manipulations, which expands the scope of THz chiral metadevice and its applications.

Active tuning of Si metasurface with large area

Active tuning of Si metasurface with large area

All-optical AZO-based modulator topped with Si metasurfaces

All-optical communication systems are under continuous development to address different core elements of inconvenience. Here, we numerically investigate an all-optical modulator, realizing a highly efficient modulation depth of 22 dB and a low insertion loss of 0.32 dB. The tunable optical element of the proposed modulator is a layer of Al-doped Zinc Oxide (AZO), also known as an epsilon-near-zero transparent conductive oxide. Sandwiching the AZO layer between a carefully designed distributed Bragg reflector and a dielectric metasurface—i.e., composed of a two-dimensional periodic array of cubic Si—provides a guided-mode resonance at the OFF state of the modulator, preventing the incident signal reflection at λ = 1310 nm. We demonstrate the required pump fluence for switching between the ON/OFF states of the designed modulator is about a few milli-Joules per cm2. The unique properties of the AZO layer, along with the engineered dielectric metasurface above it, change the reflection from 1 to 93%, helping design better experimental configurations for the next-generation all-optical communication systems.

Study of a High-Index Dielectric Non-Hermitian Metasurface and Its Application in Holograms.

We demonstrate that a high-index dielectric Si metasurface with a designed chiral unit structure possesses an exceptional point (EP) when it is described by a non-Hermitian Hamiltonian associated with the transmission matrix. By encircling any path in the parameter space around the EP, topologically protected 2π-phase accumulation occurs. These typical non-Hermitian properties are ascribed to complex scattering phenomena related to the coupling between electric and magnetic dipolar modes from the high-index dielectric Si metasurface. The topologically guaranteed entire 2π-phase accumulation and chiral distinction around the EP open up many promising possibilities in nanophotonic device designing; for instance, phase-only and polarization multiplexing holograms are realized in this work.

Simulation of Mushroom Nanostructures with Ag Nanoparticles for Broadband and Wide-Angle Superabsorption

Metal nanoparticles (NPs) concentrate the energy of incident photons through plasmon resonance excitation, which allows scattering into a substrate with a high refractive index, and the radiated energy from this excitation significantly increases the optical absorption of the substrate. In this work, the effect of Ag NPs on the absorption capacity of mushroom-nanostructured Si metasurfaces was analyzed using the finite-difference time-domain method. It was observed that the absorbance in the metasurfaces with Ag NPs increased from 90.8% to 98.7% compared with nanostructured Si metasurface without NPs. It was shown that the plasmon resonance effect of Ag NPs enlarged the range of the FP cavity by about 10 times, and the electric field strength E2 increased by about four times through the combination of Ag NP and Si absorbers. Meanwhile, the effect of randomly distributed nanostructures on the absorption properties of Si metasurfaces was simulated. Additionally, the nanostructured surface with Ag NPs was insensitive to angle, which encourages the design of broadband and wide-angle superabsorption nanostructures.

Second‐Harmonic Generation in Strained Silicon Metasurfaces

Dielectric metasurfaces supporting Mie resonances can allow significantly boosted and tailored nonlinear light–matter interactions at the nanoscale. However, nonlinear dielectric metasurfaces typically only have odd‐order nonlinearities, unless resorting to material systems such as GaAs, GaP, or LiNbO3, each with unique challenges in device fabrication and integration. As the most widely adopted constituent material of metasurfaces, silicon (Si) does not possess an intrinsic second‐order nonlinear susceptibility. Herein, second‐harmonic generation (SHG) in a Si metasurface strained by a silicon nitride (SiN x ) cladding layer is demonstrated. Utilizing the stress caused by the SiN x layer to break the inversion symmetry of the bulk Si crystal, greatly enhanced SHG in the strained Si metasurface compared with that from an unpatterned Si film with the SiN x cladding layer, with an experimentally measured conversion efficiency as high as 4.2 × 10−5 W−1, is observed. Experiments are further performed and it is concluded that the enhanced SHG is most likely due to the applied stress instead of charged defects in the SiN x cladding. This work opens a new route to realizing dielectric metasurfaces with second‐order nonlinearity in a complementary metal–oxide–semiconductor (CMOS)‐compatible platform.

Optomechanical Modulation Spectroscopy of Bound States in the Continuum in a Dielectric Metasurface

Elusive features in photonic and electronic devices can be detected by means of advanced, time-domain spectroscopic techniques. In this letter we introduce a novel kind of modulation spectroscopy, based on the optomechanical interaction of photonic and mechanical modes. Applying the technique to a Si metasurface and its drum-like mechanical modes, we detect narrow-band quasi-Bound-State-in-the-Continuum (q-BIC) modes close to normal incidence, where their measurement can be hindered by a high symmetry protection and undesired background modes. Showing a visibility enhancement of more than one order of magnitude, the optomechanical modulation spectroscopy can be an innovative tool for precise spectroscopy of a wide set of photonic devices, including the goal of measuring purely symmetry protected BIC resonances.

Dynamic terahertz anisotropy and chirality enhancement in liquid-crystal anisotropic dielectric metasurfaces

To enhance and actively control terahertz (THz) anisotropy and chirality, we have designed and fabricated a THz composite device with a liquid crystal (LC) layer and Si anisotropic metasurface. By initial anchoring and electrically rotating the spatial orientation of the LC optical axis, the different symmetry relationships are obtained in this hybrid device. When the optical axis of LC is parallel or perpendicular to the optical axis of the Si metasurface, the anisotropy of the device will be enhanced or offset, which leads to a tunable phase-shift range of more than 180°. When there is an angle between the two optical axes, due to the destruction of the mirror symmetry in the LC-Si anisotropic medium, the highest circular dichroism of the device reaches 30 dB in the middle orientation state of the LC optical axis, and the active modulation can be realized by changing the bias electric field on the LC layer. This composite device demonstrates rich characteristics for the feasible manipulation of THz polarization conversion and chiral transmission, which can be applied in THz polarization imaging and chiral spectroscopy.

Deep-subwavelength gap modes in all-dielectric metasurfaces for high-efficiency and large-angle wavefront bending.

All-dielectric, phase-gradient metasurfaces manipulate light via a judiciously designed planar distribution of high and low refractive indices. In the established design approaches, the high-index elements play a dominant role, while the electromagnetic field existing between these elements is routinely viewed as either an incidental by-product or detrimental crosstalk. Here we propose an alternative approach that concentrates on exploring the low-index materials for wavefront shaping. In our Si metasurface, the low-index air gap between adjacent Si fins is judiciously tuned, while the high-index Si fins only have a single size across the whole metasurface. These gap modes provide the full 2π phase coverage, as well as high and relatively uniform transmission, at the deep-subwavelength scale. These characteristics are ideal for mapping a steep phase gradient, consequently suitable for high-efficiency and large-angle wavefront bending. This light manipulation capability is exemplified with numerical simulation in PW-SW (freely propagating wave to surface wave) conversion, where the wavefront is deflected by an angle of 90°. In the gap-mode meta-converters, the average unit size can be only 1/60 of free-space wavelength, an order of magnitude smaller than that of conventional all-dielectric metasurfaces. Their conversion efficiency can reach 68%, the highest value reported for any all-dielectric gradient metasurface THz converter.

Fabrication of Flexible Sticker of Si Metasurfaces by a Transfer Process

Fabrication of Flexible Sticker of Si Metasurfaces by a Transfer Process