Si-H Bonds Research Articles

Redox Cycling with Tellurium. Si-H Bond Activation by a Lewis Superacidic Tellurenyl Cation.

The C,N-chelated aryltellurenyl triflate [2-(tBuNCH)C6H4Te][OTf] (1) activates the Si-H bonds in the tertiary silanes R3SiH via Umpolung of H- to H+ to give rise to the iminium salts (tBuN(H)CH)C6H4TeSiR3][OTf] (2R, R = Et, Ph (elusive) and R = Si(CH3)3 isolated; OTf = O3SCF3) comprising Te-Si bonds, which are capable of generating silyl triflates, R3SiOTf Under attack of a second equivalent of 1 The unprecedented Si-H activation was utilized in main group redox catalysis using p-quinones, which were converted into (silylated) hydroquinones.

Development of Functionalized Polylactide Thin Films Using Poly(methylhydrogenosiloxane) Sol-Gel Process with Improved Antifouling Properties.

Biobased polylactide (PLA) films were modified with low reticulate polysiloxane gel acting as a scalable platform for the hydrophilization of polymeric film surface. The PLA thin film was first coated with poly(methylhydrogenosiloxane) (PMHS) by the sol-gel transition via the condensation of diethoxymethylsilane (DH) and triethoxysilane (TH) using trifluoromethanesulfonic acid as a catalyst. Then, hydrosilylation of Si-H bonds in the presence of Karstedt's catalyst allowed the covalent grafting of hydrophilic alkene-containing molecules, i.e., triethylene glycol monomethyl allyl (TEGMEA) and a new zwitterionic allylcarboxybetaine (ACB) synthesized for the first time by the quaternization of dimethyl allyl amine (DMAA) with β-propiolactone. PMHS coating on the PLA film was evidenced by Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS). The observation by atomic force microscopy (AFM) revealed a homogeneous coating with low roughness (RMS = 0.29 nm). The hydrophilicity of functionalized PLA films was determined by water contact angle (WCA) measurements using the captive bubble method. A large increase in wettability properties was observed for both grafting with TEGMEA (WCA = 38°) and ACB (WCA = 42°) in comparison with the native PLA film (WCA = 80°). Moreover, the biocompatibility and antifouling efficiency of functionalized PLA films were evaluated by protein adsorption, bacterial adhesion, and cytotoxicity tests. The results indicate that the grafting of the two types of hydrophilic compounds does not affect the biocompatibility of PLA while significantly reducing protein adsorption and bacterial adhesion, thus showing the great potential of this surface functionalization strategy for applications in the medical field.

Polymers Containing Diethylsiloxane Segment and Active Functional Group by Ring-Opening Polymerization of Hexaethylcyclotrisiloxane under the Catalysis of Linear Chlorinated Phosphazene Acid.

Linear chlorinated phosphazene acid is prepared using PCl5 and NH4Cl as raw materials. Using hexaethylcyclotrisiloxane as the monomer, 1,1,3,3-tetramethyldisiloxane or 1,3-divinyl-1,1,3,3-tetramethyldisiloxane as the end-capping agent, and linear chlorinated phosphazene acid as the catalyst, polydiethylsiloxane oligomers terminated with active Si-H or Si-CH=CH2 groups have been prepared. Using hexaethylcyclotrisiloxane and 1,3,5,7-octamethylcyclotetrasiloxane as comonomers, 1,1,3,3-tetramethyldisiloxane or hexamethyldisiloxane as the end-capping agent, or using hexaethylcyclotrisiloxane and octamethylcyclotetrasiloxane as comonomers, 1,1,3,3-tetramethyldisiloxane as the end-capping agent, copolymers containing active Si-H bonds and dimethylsiloxane segments have been prepared under the catalysis of linear chlorinated phosphazene acid. The effects of catalyst dosage, reaction temperature, reaction time, end-capping agent, and polymerization monomer dosage on polymer yield and structure were investigated. Using 300 ppm of linear chlorinated phosphazene acid, oligomers and copolymers containing an active Si-H bond and diethylsiloxane segment were prepared under mild conditions. The molecular weight of the obtained polymers was close to their designed values, but their PDI values were small. The highest yield of α, ω-bisdimethylsiloxyl-terminated PDES oligomers reached 93%. Using oligomers and copolymers containing Si-H bonds and diethylsiloxane segments as crosslinkers, a silicone gel containing diethylsiloxane segments was prepared by hydrosilylation reaction. With the introduction of a diethylsiloxane segment, the glass transition temperature of the silicone gel decreased relative to that of the PDMS oligomer, but the temperature at 5% weight loss in nitrogen atmosphere decreased from 347 °C to 312 °C. The mechanism of the ring-opening polymerization of hexaethylcyclotrisiloxane catalyzed by linear chlorinated phosphazene acid is also discussed.

Study on the mechanism of advanced pre-degradation on hydrogenation of multi-crystalline silicon solar cells

The electrical performance of monocrystalline silicon solar cells was significantly improved under hydrogenation alone with appropriate conditions, while the similar improvements of multi-crystalline silicon (mc-Si) solar cells were relatively slight. In this paper, an advanced pre-degradation (Adv.Pre-Deg) was introduced to improve the hydrogenation effect and enhance the performance of mc-Si solar cells. Meanwhile, further studies were conducted on the influence mechanism of Adv.Pre-Deg on subsequent hydrogenation, and some microscopic detection was applied to characterize the effect of Adv.Pre-Deg on the following hydrogenation. The results indicated that Adv.Pre-Deg only slightly influenced the crystallinity, dangling bonds, and defects within the surface dielectric layer, which illustrated that Adv.Pre-Deg hardly harmed the dielectric layer. Then, Raman imaging demonstrated that Adv.Pre-Deg displayed primary assistance in stimulating impurities or defects in silicon bulk in advance. According to the detection of the Si-H bond, we also concluded that the effective performance improvement on mc-Si silicon solar cells through Adv.Pre-Deg & hydrogenation was due to the pre-activation of impurities or defects by Adv.Pre-Deg. Moreover, Adv.Pre-Deg enhanced the passivation effect of hydrogenation on interstitial Fei+ from 30.3%rel. to 89.1%rel. and dislocation defects from 21.92%rel. to 46.18%rel., doubling the improvement of bulk passivation on mc-Si. Therefore, the method of combining Adv.Pre-Deg with hydrogenation aims to be applied to other types of solar cells and focus on improving performance and suppressing various degradations, such as TOPCon and HJT.

Gold-Catalyzed Synthesis of 5H-Benzo[b]indeno[2,1-d]silines by Insertion of Vinyl Carbocations into the Si-H Bond.

We have developed a gold-catalyzed cascade reaction of aryldiynes bearing a hydrosilyl group to afford a variety of unexplored 5H-benzo[b]indeno[2,1-d]silines. The reaction system is applicable to the synthesis of bidirectionally π-extended silacycles from tetra(alkynyl)aryl compounds. Computational studies suggest that 5H-benzo[b]indeno[2,1-d]silines are formed via the insertion of a vinyl carbocation intermediate into the Si-H bond.

Catalytic Asymmetric Construction of C- and Si-Stereogenic Silacyclopentanes via Hydrosilylation of Arylmethylenecyclopropanes.

Silacycles have exhibited significant potential for application in the fields of medicinal chemistry, agrochemistry, and materials science. Accordingly, the development of effective methods for synthesizing these compounds has attracted increasing attention. Here, we report an efficient Cu-catalyzed enantioselective hydrosilylation of arylmethylenecyclopropanes with hydrosilanes, that allows the rapid assembly of various enantioenriched carbon- and silicon-stereogenic silacyclopentanes in good yields with excellent enantioselectivities and diastereoselectivities under mild conditions. Further stereospecific transformation of the Si-H bond on the chiral silicon center expands the diversity of these C- and Si-stereogenic silacyclopentanes.

Hydrosilylation of Arynes with Silanes and Silicon-Based Polymer.

Benzyne derived from hexadehydrogenated Diels Alder (HDDA) reactions was found to be an efficient hydrosilylation acceptors. Various silanes can react smoothly with HDDA-derived benzyne to give the arylation products. Lewis acid such as boron trifluoride etherate can accelerate these hydrosilylation reactions. Polyhydromethylsiloxane (PHMS), a widely used organosilicon polymer, was also successfully modified using our method. About 5 % of Si-H bonds in the polymer were inserted by benzynes, giving a functional PHMS with much more solubility in methanol and with a blue-emitting fluorescence behavior. Mechanism research shows that the insertion of benzyne into the Si-H bond probably undergoes a synergistic pathway, which is quite different from the traditional radical-initiated hydrosilylation or transition-metal-catalyzed hydrosilylation.

Insights into mechanism of UV-induced degradation in silicon heterojunction solar cells

The ultraviolet-induced degradation (UVID), with losses of up to 11 % after 2000 h-exposure (Sinha et al., 2023) [1], impairs long-term stability of silicon heterojunction (SHJ) solar cells at present. However, the mechanism of UVID has remained only roughly understood till now. Herein, we shed light on the electrical properties of defects in SHJ solar cells to elucidate the underlying mechanism. Defect generation in SHJ solar cells after ultraviolet (UV) irradiation can be observed from photoluminescence (PL) images. Furthermore, we extract the density of states near Fermi level in hydrogenated amorphous silicon (a-Si:H) through analyzing carrier transport mechanism, and find the increment of state density induced by the UV irradiation. In conjunction with Fourier-transform infrared (FTIR) spectra, we ascribe the UV-induced defects to the rupture of Si–H and Si–H2 bonds. Besides, the intersection point between Fermi levels of the c-Si and a-Si:H/c-Si interface can be found shift toward valence band from admittance spectrum analysis, which is the cause of the higher interface state density based on the theory of Fermi energy dependent hydrogen diffusion energy. As a result, a potential mechanism of generation of recombination centers responsible for UVID in SHJ solar cells is proposed, which could provide insights into the possible solutions for UVID and enhance the long-term stability of SHJ solar cells.

Cationic Bis(hydrosilane)-Coinage-Metal Complexes: Synthesis, Characterization, and Use as Catalysts for Outer-Sphere C=O Hydrosilylation Not Involving Metal Hydrides.

The preparation of cationic bis(hydrosilane)-coinage-metal complexes by chloride abstraction from the neutral metal chloride precursors with Na[BArF 4] is described. Unlike previously reported hydrosilane-stabilized copper and silver complexes, the presented complexes are cationic and feature two bidentate (ortho-silylphenyl)phosphine ligands. These complexes were fully characterized by NMR spectroscopy and X-ray diffraction analysis, revealing that both Si-H bonds are activated by the Lewis acidic cationic metal center. The new complexes were found to be effective in catalytic carbonyl hydrosilylation, leading to the corresponding silyl ethers under mild conditions without the addition of an external base. Combined mechanistic control experiments and quantum chemical calculations support an ionic outer-sphere mechanism, in which a neutral metal alkoxide species instead of a metal hydride is the key intermediate that interacts with the silylcarboxonium ion to generate the silyl ether.

Recent Advances on the Chemistry of Transition Metal Complexes with Monoanionic Bidentate Silyl Ligands.

The chemistry of transition-metal (TM) complexes with monoanionic bidentate (κ2-L,Si) silyl ligands has considerably grown in recent years. This work summarizes the advances in the chemistry of TM-(κ2-L,Si) complexes (L=N-heterocycle, phosphine, N-heterocyclic carbene, thioether, ester, silylether or tetrylene). The most common synthetic method has been the oxidative addition of the Si-H bond to the metal center assisted by the coordination of L. The metal silicon bond distances in TM-(κ2-L,Si) complexes are in the range of metal-silyl bond distances. TM-(κ2-L,Si) complexes have proven to be effective catalysts for hydrosilylation and/or hydrogenation of unsaturated molecules among other processes.

Correlation the microstructure and magnetic properties of Fe-Ni-Mo soft magnetic composites fabricated via polymer-derived ceramics

The coatings play a crucial role in enhancing the performance of soft magnetic composites (SMCs). This study aims to create coatings for Fe-Ni-Mo SMCs using polysilazane (PSZ) as the precursor. The transformation mechanism of the PSZ/resin mixture is studied by analyzing functional groups and chemical bonds at various temperatures. During the self-polymerization process of PSZ at 350 °C, N–H, C = C–H, Si-H bonds, –CH3, and Si-CH3 groups undergo crosslinking reactions to form C–C and Si-N bonds. When the temperature reaches 600 °C, PSZ polymer cleavage, O-Si-C and Si-N-Si bond dominate in the coating. Additionally, PSZ can effectively enhance the heat resistance of silicone resin through its reaction with Si-OH groups, which has a significant effect on increasing the resistivity of SMCs and reducing high frequency core loss. Optimizing the PSZ content to 0.5 wt% enhances the magnetic properties of Fe-Ni-Mo SMCs, resulting in a μe of 74.0 at 100 kHz and a corresponding core loss (Pcv) of 547.7 mW/cm3 at 100 kHz/100 mT. The findings provide valuable insights for optimizing PSZ content to improve magnetic performance in SMCs.

Catalytic Properties of [PSiP] Pincer Cobalt(II) Chlorides Supported by Trimethylphosphine for Alkene Hydrosilylation Reactions.

In this paper, six silyl [PSiP] pincer cobalt(II) chlorides 1-6 [(2-Ph2PC6H4)2MeSiCo(Cl)(PMe3)] (1), [(2-Ph2PC6H4)2HSiCo(Cl)(PMe3)] (2), [(2-Ph2PC6H4)2PhSiCo(Cl)(PMe3)] (3), [(2-iPr2PC6H4)2HSiCo(Cl)(PMe3)] (4), [(2-iPr2PC6H4)2MeSiCo(Cl)(PMe3)] (5), and [(2-iPr2PC6H4)2PhSiCo(Cl)(PMe3)] (6)) were prepared from the corresponding [PSiP] pincer preligands (L1-L6), CoCl2 and PMe3 by Si-H bond activation. The catalytic activity of complexes 1-6 for alkene hyrdosilylation was studied. It was confirmed that complex 1 is the best catalyst with excellent regioselectivity among the six complexes. Using 1 as the catalyst, the catalytic reaction was completed within 1 h at 50 °C, predominantly affording Markovnikov products for aryl alkenes and anti-Markovnikov products for aliphatic alkene substrates. During the investigation of the catalytic mechanism, the Co(II) hydrides [(2-Ph2PC6H4)2MeSiCo(H)(PMe3)] (8) and [(2-iPr2PC6H4)2MeSiCo(H)(PMe3)] (9) were obtained from the stoichiometric reactions of complex 1 and 5 with NaBHEt3, respectively. Complexes 8 and 9 could also be obtained by the reactions of preligands L1 and L5 with Co(PMe3)4 via Si-H bond cleavage. More experiments corroborated that complex 8 is the real catalyst for this catalytic system. Under the same catalytic conditions as complex 1, using complex 8 as a catalyst, complete conversion of styrene was also achieved in 1 h, and the selectivity remained unchanged. Based on the experimental results, we propose a plausible mechanism for this catalytic reaction. The addition of B(C6F5)3 to catalyst 1 can reverse the selectivity of styrene hydrosilylation from the Markovnikov product as the main product (b/l = 99:1) to the anti-Markovnikov product as the main product (b/l = 40:60). Further study indicated that using the (CoCl2 + L1) system instead of complex 1, the selectivity was changed from Markovnikov to anti-Markovnikov product (b/l = 1:99.7). Therefore, the selectivity for the substrate styrene is influenced by the presence of a PMe3 ligand. The different selectivities may be caused by different active species. For the system of complex 1, a cobalt(II) hydride is the real catalyst, but for the (CoCl2 + L1) system, a cobalt(I) complex is proposed as active species. The molecular structures of Co(II) compounds 5 and 9 were resolved by single-crystal X-ray diffraction.

Ring Expansion toward Disila-carbocycles via Highly Selective C-Si/C-Si Bond Cross-Exchange.

Herein, we successfully inhibited the preferential homodimerization and C-Si/Si-H bond cross-exchange of benzosilacyclobutenes and monohydro-silacyclobutanes and achieved the first highly selective C-Si/C-Si bond cross-exchange reaction by deliberately tuning the Ni-catalytic system, which constitutes a powerful and atom-economical ring expansion method for preparing medium-sized cyclic compounds bearing two silicon atoms at the ring junction, which are otherwise inaccessible. The DFT calculation explicitly elucidated the pivotal role of Si-H bond at silacyclobutanes and the high ring strain of two substrates in realizing the two C-Si bonds cleavage and reformation in the catalytic cycle.

Comparative Passivation of Si(100) by H2 and D2 Atmospheres under Simultaneous Xe+ Bombardment: An X-ray Photoelectron Spectroscopy Analysis.

This study presents a comparison of H2 and D2 passivation on Si(100) under simultaneous Xe+ ion bombardment. The impact of Xe+ ions causes significant damage to the substrate surface, leading to an increase in H2 (D2) retention as Si-H (Si-D) bonds. The ion bombardment conditions are precisely controlled using a Kaufman ion gun. The atomic concentrations on the surface of the sample were investigated by quasi-in situ X-ray photoelectron spectroscopy. A simple methodology is employed to estimate the H (D) chemical concentration and the cover ratio of the sample, with regard to the oxygen concentration through residual water chemisorption present in the vacuum vessel. Differences in passivation are expected when using H2 or D2 atmospheres because their retained scission energies and physisorption properties differ. The results indicate an increase of the sticking coefficient for D2 and H2 under the ion bombardment. It is also found that the flux of H2 (D2) impinging on the surface contributes to play an important role in the whole process. Finally, a model is proposed to describe the phenomenon of the passivation of Si under Xe+ ion bombardment in the presence of H2 (D2).

In Situ Copper Coating on Silicon Particles Enables Long Durable Anodes in Lithium-Ion Batteries.

Addressing the significant obstacles of volume expansion and inadequate electronic conductivity in silicon-based anode materials during lithiation is crucial for achieving a long durable life in lithium-ion batteries. Herein, a high-strength copper-based metal shell is coated in situ onto silicon materials through a chemical combination of copper citrate and Si-H bonds and subsequent heat treatment. The formed Cu and Cu3Si shell effectively mitigates the mechanical stress induced by volume expansion during lithiation, strengthens the connection with the copper substrate, and facilitates electron transfer and Li+ diffusion kinetics. Consequently, the composite exhibits a reversible specific capacity of 1359 mA h g-1 at 0.5 A g-1 and maintains a specific capacity of 837 mA h g-1 and an 83.5% capacity retention after 400 cycles at 1 A g-1, surpassing similar reports on electrochemical stability. This facile copper plating technique on silicon surfaces may be used to prepare high-performance silicon-based anodes or functional composites in other fields.

Cu-Pd bimetal-decorated siloxene nanosheets for semi-hydrogenation of acetylene.

Metallic Pd has been proved highly promising when paired with Cu for industrially important acetylene semi-hydrogenation. Herein, we demonstrate that high-surface-area siloxene can feasibly enable alloying between Pd and Cu via room-temperature reduction with Si-H bonds. Unprecedentedly small Cu nanoparticles with isolated Pd were in situ loaded on siloxene, addressing the core problem of low selectivity of Pd and low activity of Cu. This devised structure outclassed the traditional impregnated SiO2 in every aspect of the catalytic performance for the semi-hydrogenation of acetylene under industry conditions, with a 91% acetylene conversion and an impressive 93% selectivity to ethylene at 200 °C, and showed long-term stability with negligible activity decay at this harsh temperature. This work provides new insights for the design of economic bimetallic loaded catalysts for balancing the activity-selectivity dilemma, demonstrating the viability of siloxene as both a synthetic reagent and a carrier material for efficient catalysis.

Advances in disilylation reactions to access cis/trans-1,2-disilylated and gem-disilylated alkenes.

Organosilane compounds are widely used in both organic synthesis and materials science. Particularly, 1,2-disilylated and gem-disilylated alkenes, characterized by a carbon-carbon double bond and multiple silyl groups, exhibit significant potential for subsequently diverse transformations. The versatility of these compounds renders them highly promising for applications in materials, enabling them to be valuable and versatile building blocks in organic synthesis. This review provides a comprehensive summary of methods for the preparation of cis/trans-1,2-disilylated and gem-disilylated alkenes. Despite notable advancements in this field, certain limitations persist, including challenges related to regioselectivity in the incorporation and chemoselectivity in the transformation of two nearly identical silyl groups. The primary objective of this review is to outline synthetic methodologies for the generation of these alkenes through disilylation reactions, employing silicon reagents, specifically disilanes, hydrosilanes, and silylborane reagents. The review places particular emphasis on investigating the practical applications of the C-Si bond of disilylalkenes and delves into an in-depth discussion of reaction mechanisms, particularly those reactions involving the activation of Si-Si, Si-H, and Si-B bonds, as well as the C-Si bond formation.

Dirhodium(II) complex catalyzed dehydrosilylation of styrenes: theoretical investigations on the mechanism, selectivity, and ligand effects.

The dirhodium(II) complexes with bridging phosphine and OAc ligands showed high reactivity and selectivities in olefin dehydrosilylation. In order to determine the structure of the actual catalyst which cannot be determined experimentally, the geometries of the dirhodium catalyst, the detailed catalytic mechanism, and the stereo- and chemo-selectivities of the title reaction were studied using DFT calculations. The results showed that one OAc group is monodentate and the other is bidentate in the dirhodium catalyst C'. The determined catalytic cycle consists of four processes: Rh-H bond activation in C', Si-H bond activation in alkoxysilane, alkylene insertion into the Rh-Si bond, followed by β-H elimination or σ-metathesis reaction. Among them, the alkylene insertion process is the rate-determining step. The stereoselectivity of the title reaction is controlled by the steric effect and orbital interactions between the alkyene and dirhodium catalysts in the β-H elimination process. The chemoselectivity is regulated by the presence of the axial ligand in the dirhodium catalyst, when there is an axial ligand coordinated to the Rh atom, E-alkene is the main product, whereas alkane would be obtained in the absence of an axial ligand. Our work determines the structure of the actual catalyst, and provides explanations and predictions for the activity, and chemo- and stereo-selectivity control of olefin dehydrosilylation.

Neutral Chromium Complex with a Cr≡Si Triple Bond: Synthesis and Photoinduced H-H and Benzene C-H Bond Activation.

A neutral silylyne complex with a Cr≡Si triple bond was prepared by dehydrogenation of a chromium silylene complex with Cr-H and Si-H bonds, and was isolated as monomeric crystals, unlike dimeric forms of its tungsten and molybdenum congeners. The strong Cr(δ-)-Si(δ+) bond polarity was revealed by the reaction with MeOH and DFT calculations. The chromium silylyne complex reacted with H2 under LED (365 nm) irradiation to reproduce the precursor silylene complex with a (H)Cr=Si(H) moiety, as a result of 1,2-H-H addition across the Cr≡Si triple bond. Similarly, the chromium silylyne complex reacted with benzene under irradiation to afford an 1,2-addition product with a (H)Cr=Si(Ph) moiety, via benzene C-H bond activation accompanied by Si-C bond forming.

Soft Surface Activated Bonding of Hydrophobic Silicon Substrates

Surface Activated Bonding (SAB) is interesting for strong silicon to silicon bonding at room temperature without any annealing needed, afterwards (1). Although it is a well-known technique, the activation step, in particular, is scarcely documented. This paper offers insights about the impact of soft activation parameters on the amorphous region at the bonding interface. In addition, the adherence energy of hydrophobic silicon bonding with SAB is quantified to better understand bonding mechanisms.With very low dose and acceleration activation parameters, the surface preparation prior to bonding becomes of paramount importance. Indeed, the silicon native oxide is typically removed during the activation step. The thin amorphous silicon region is a side effect of this singular surface preparation(2).In order to work around this potential roadblock, we used instead hydrophobic surface preparation to remove the native oxide, before entering into the activation step. Two types of preparation were evaluated in this study. First, a standard “HF-Last” chemical treatment was used on standard silicon wafers. This treatment removed the silicon native oxide and passivated the surface with Si-H and, to a lesser extent, Si-F bonds (3). We otherwise used epitaxy-reconstructed silicon wafers with fully hydrophobic surfaces (4). Silicon native oxide was removed thanks to an ultra-pure H2 bake at 1100°C, 20 Torr for 2 minutes in an epitaxy chamber. Then, several tens of nm of Silicon were deposited at 950°C to obtain, after another H2 bake, a silicon surface fully passivated by hydrogen atoms with atomically smooth terraces and mono-atomic step edges.Our EVG®ComBond® bonding tool, operating under ultra-high vacuum (UHV), is equipped with an accelerated argon ion beam to perform the activation step. The softest functional settings, on our set up, are 50V (acceleration) and 26 mA (dose). After beam initialization, the two sets of substrates pass through the activation chamber. Activated substrates are then transferred to the bonding chamber within 5 minutes of handling.The exposure time in the activation chamber was evaluated, the aim being to remove adsorbed hydrogen atoms on the silicon surface without any amorphous silicon generation. Different characterization techniques such as transmission electron microscopy or FTIR-MIR were used to quantify the amorphous layer formation and the potential Si-H bonds remaining (after activation). The adherence energy of the bonded pair was measured by a double cantilever beam method under prescribed displacement control in anhydrous atmosphere (5).Figure 1 shows the adherence energy (Gc=2γc) in mJ/m² as a function of activation exposure time with soft activation parameters for both wafer preparations. The 0s reference bonding was conducted without passing through the activation module. We then had very low adherence energies, around 50 mJ/m², as expected for standard hydrophobic silicon wafer bonding under UHV (6). Upon Ar+ exposure, behaviors were very different depending on surface preparation. The adherence energy barely increased with the Ar+ exposure time for “HF-Last” surfaces. Meanwhile, even 1s of exposure to Ar+ had a definite impact on the adherence energy of epi-reconstructed, atomically smooth silicon surfaces, which was definitely higher. The maximum difference between both wafer preparations occurred for 30 up to 60 seconds exposure times. This indicate a change in the bonding mechanism as the comparatively high roughness of the “HF-Last” silicon wafer started to be counter-balanced by activation.The experimental set up, the manufacturing process, as well as further characterizations will be presented. Cross-sectional TEM imaging of the bonding interface, FTIR-MIR and AFM measurements after surface preparation will help us better understand the specificities of such soft activation process on the SAB of hydrophobic surfaces. The impact of the amorphous silicon layer on bonding will be discussed. Suga T et al. STRUCTURE OF A1-A1 A N D A1-Si3N4 INTERFACES BONDED AT ROOM TEMPERATURE BY MEANS OF THE SURFACE ACTIVATION METHOD. Acta Metallurgica et Materialia 1992.Takagi H et al. Surface activated bonding of silicon wafers at room temperature. Appl Phys Lett. 1996.Abbadie A et al. Low thermal budget surface preparation of Si and SiGe. Appl Surf Sci. 2004.Sordes D et al. Nanopackaging of Si(100)H Wafer for Atomic-Scale Investigations. 2017.Maszara WP et al. Bonding of silicon wafers for silicon‐on‐insulator. J Appl Phys. 15 nov 1988;64(10):4943-50.Tong QY et al. The Role of Surface Chemistry in Bonding of Standard Silicon Wafers. J Electrochem Soc. 1997. Figure 1