To expand the detection capabilities of silicon (Si)-based photodetector and address key scientific challenges such as low light absorption efficiency and short carrier lifetime in Si-based graphene photodetector. This work introduces a novel Si-based Schottky coupled structure by in situ growth of 3D-grapheneand molybdenum disulfide quantum dots (MoS2 QDs) on Si substrates using chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD) techniques. The findings validate the "dual-enhanced absorption" effect, enhancing the understanding of the mechanisms that improve optoelectronic performance. The synergistic effect of 3D-graphene's natural nano-resonant cavity and MoS2 QDs enhances light absorption efficiency and extends carrier lifetime. Introducing MoS2 QDs broadens and intensifies the built-in electric field, promoting the separation of photogenerated electrons and holes. The photodetector exhibits a wideband light response in the wavelength range of 380-2200nm. It stably outputs photocurrent under high-frequency (1 kHz) modulated laser (2200nm), with a responsivity (R) of 40mAW-1 and detectivity (D*) of 1.15×109 Jones. Photodetectors show the ability to process and encrypt complex binary signals and achieve versatility in "AND" gate and "OR" gate logic operations, as well as image sensing (240×200 pixels).
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