Short-channel Effects In MOSFETs Research Articles

Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs

Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs

Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology

Using a scaling length (λ) analysis, the short-channel effects of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate structures are investigated. It is found that the minimum channel length should be greater than 5λ and the depletion thickness of the SSR should be less than 30 nm in order to be applicable to 70 nm CMOS technology.

Tools for contactless testing and simulation of CMOS circuits

Short channel effects in MOSFETs are responsible for time-dependent hot-carrier luminescence, synchronous with the switching transitions in CMOS circuits. We propose an optical non-invasive inspection technique for high-speed signals, based on a high sensitivity solid-state photodetector with sharp time resolution. This tool is able to probe the fast electrical waveforms propagating through ULSI circuits without electrically loading the circuit under test. The measured time resolution of 50 ps allows an equivalent analog bandwidth of about 20 GHz. From the experimental results and the luminescence characterization of single transistors, we propose a SPICE model able to foresee the photoemission in complex ULSI circuits, down to transistor level. The optical testing equipment and the SPICE modeling are valuable tools for simulation, characterization and testing of fast ULSI circuits.

A guide to short-channel effects in MOSFETs

Short-channel effects form a very important consideration for the performance of very-large-scale integrated circuits built with ultrasmall devices. Definitions of each of the observed short-channel effects in MOSFETs are given by describing their respective phenomenological meanings. The impact of these parameters on the measured I-V curves, as well as the differentiation between long-channel and short-channel behavior from the measured data, are discussed.