Semiconductor Saturable Absorber Research Articles

Characterization of noise spectra in low-jitter GHz mode-locked fs-laser-inscribed waveguide lasers

We demonstrate low-noise, continuous-wave mode-locking of a diode-pumped Yb:KLuW waveguide laser operating at fundamental repetition rates in the GHz range. Utilizing a femtosecond-laser-inscribed Yb:KLuW channel waveguide laser with a tunable cavity length of a few centimeters, we successfully generate femtosecond pulses near 1030 nm, employing either single-walled carbon nanotubes or semiconductor saturable absorbers. Although timing noise is one of the most critical factors in the implementation of high-repetition-rate laser sources for various applications, investigations into timing noise characteristics in waveguide lasers remain limited. This study fills this gap by presenting timing jitter measurements for GHz mode-locked waveguide lasers with diverse cavity parameters. To quantitatively analyze noise spectral characteristics, including relaxation oscillation processes induced by intensity noise features, we introduce a theoretical modeling approach. The present investigation directly enables the provision of strategies for further suppression of timing jitter and designing high-performance, low-noise mode-locked lasers.

Narrowband 10-ps-class mode-locked erbium-doped fiber laser oscillator

We demonstrate a narrowband erbium-doped fiber (EDF) laser oscillator having a linear cavity based on the design of bulk laser oscillators mode-locked by a semiconductor saturable absorber mirror (SESAM) and out coupled by a fiber Bragg grating. The EDF laser oscillator has an average power of 7.06 ± 0.04 mW with a 3 dB bandwidth of 0.37 nm and a pulse duration of ∼12 ps at a repetition rate of 50.47 MHz. A pulse energy of ∼140 pJ is the highest ever reported in SESAM mode-locked EDF laser oscillators with a nearly Fourier-limited pulse duration demonstrating power scalability of a bulk laser and compactness of a nearly all-fiber laser. The repetition rate has a free-running fluctuation of only 312 Hz over 7 h of operation making it a promising light source for application to laser spectroscopy. The long pulse duration makes this EDF laser oscillator a suitable source for seeding a high-average-power amplifier using a large mode-area photonic crystal or tapered gain fiber without the need of pulse stretching. Moreover, this laser oscillator could be an alternative solution to the development of complicated bulk narrowband laser sources suitable for building an ion trap for application to quantum computing.

Easy wavelength-tunable passive mode-locked fiber laser through a Lyot filter with a SESAM

In this work, we present an easy wavelength-tunable passive mode-locked fiber laser with a semiconductor saturable absorber mirror as a mode-locker. The cavity includes a Lyot filter as a wide wavelength-tunable filter that can be tuned by simply increasing the retardance of a variable wave retarder. The Lyot filter consists of the variable wave retarder and highly birefringent fiber inserted between two linear polarizers oriented at the same angle. The highly birefringent fiber has 8.196 cm length and linear birefringence ∆n=4.805x10−4 which provides a 61 nm period. Continuous mode-locking was experimentally achieved from 1561.9 to 1546.1 nm by simply increasing the retardance from 0.0778π to 0.4778π rad delivering sub-ps pulses width at 10.57 MHz repetition rate.

Dual-wavelength synchronously mode-locked Cr:LiSAF laser with a tunable beating frequency and a central wavelength.

We demonstrate a versatile dual-wavelength synchronous mode-locking of a diode-pumped Cr:LiSAF laser for the first time, to our knowledge. A two-color mode-locked operation is achieved by using intracavity birefringent filters (BRFs) or etalons as frequency-selective elements. Using filters with different thicknesses and hence different free spectral ranges (FSRs), wavelength separation in two-color mode-locking could be selected between 1 and 9 nm, with corresponding beating frequencies in the 0.4-3.5 THz range. Moreover, the central wavelength of the two-color output could be tuned smoothly between 840 and 875 nm, only limited by the bandwidth of the semiconductor saturable absorber mirror (SESAM) used for mode-locking. The method, which enables easy adjustment of the central wavelength and beating frequency of a dual-wavelength operation, is suitable for use in other laser gain media as well.

Cpa-free Yb:YAG thin-disk regenerative amplifier laser with hundreds of watts, hundreds of kHz, and hundreds of picoseconds

This paper introduces a CPA-free Yb:YAG thin-disk regenerative amplifier laser system. The seed pulse is generated by a passive mode-locked picosecond oscillator based on a semiconductor saturable absorber mirror, with a center wavelength of 1030.7 nm, a pulse width of 7.7 ps, and a repetition frequency of 26.3 MHz. After stretched and pre-amplified by an all-fiber front stage, the seed with a pulse width of 201.3 ps and a pulse energy of 15.2 nJ was obtained, then injected into the thin-disk regenerative amplifier. Yb:YAG crystal was chosen as the material for the thin-disk, with 100 μm thickness, 9 mm diameter and 7 at.% doping rate. In order to increase the one-way round-trip gain of the thin-disk regenerative amplifier, a symmetrical dual-pass resonant cavity was designed to double the number of passing through the crystal on a round trip in the regenerative resonant cavity to reduce the times of cycles, intra-cavity loss and improve optical efficiency. We used a 969 nm fiber-coupled semiconductor laser as the pump source to pump the Yb:YAG thin-disk crystal. With zero-phonon line pumping technology, the quantum loss and thermal effect were reduced. In the end, we obtained a regenerative amplification output with an average power of 104.5 W, a repetition frequency of 200 kHz, a pulse width of 143.9 ps, and a spectrum width of 0.39 nm. The amplified pulse had quite good beam quality with Mx2 = 1.09 and My2 = 1.14.

Compact hundred-watt level picosecond laser system based on tapered double cladding fiber-single crystal fiber hybrid amplifier

This paper introduces a compact picosecond laser system using tapered double cladding fiber-single crystal fiber hybrid amplification technology for the first time. By modifying the Ginzburg-Landau equation, we established a simulation model and designed a passive mode-locked picosecond oscillator based on a semiconductor saturable absorber mirror. The oscillator outputs laser with a pulse width of 7.75 ps, a center wavelength of 1030.55 nm, and a spectrum width of 0.58 nm. The seed laser is stretched and amplified by the all-fiber front stage, and then injected into the tapered double cladding fiber-single crystal fiber hybrid amplifier. The laser power is amplified from 820 mw to 103.1 W, obtaining a gain of 21 dB. We used zero-phonon line pumping technology in single crystal fiber amplifier to reduce the thermal effects caused by quantum loss, thereby increasing the length of the crystal and increasing the power loading capacity. We designed a single crystal fiber amplification module using Yb:YAG with 60 mm long, 1 mm diameter and a 1 at.% doping rate for the first time. Finally, a hundred-watt level picosecond laser output with a repetition frequency of 26.33 MHz, an average power of 103.1 W, a pulse width of 244.72 ps, a spectrum width of 1.16 nm, and a beam quality of M2 x = 1.368 and M2 y = 1.511 was obtained. To the best of our knowledge, this is the highest picosecond laser output power for an all-fiber front-stage combined with a single-stage single crystal fiber amplifier.

Diode-pumped passively mode-locked femtosecond Yb:YLF laser at 1.1 GHz

We report femtosecond pulse generation at GHz repetition rates with the Yb:YLF gain medium for the first time. A simple, low-cost, and compact architecture is implemented for the potential usage of the system as a low-noise timing jitter source. The system is pumped by 250 mW, 960 nm single-mode diodes from both sides. The semiconductor saturable absorber mirror (SESAM) mode-locked laser is self-starting and generates transform-limited 210 fs long pulses near 1050 nm. The laser's average output power is 40 mW, corresponding to a pulse energy of 36 pJ at 1.1 GHz repetition rate. The measured laser relative intensity noise (RIN) from 1 Hz to 1 MHz is 0.42%. The performance obtained in this initial work is limited by the specifications of the available optics and could be improved significantly by employing custom-designed optical elements.

Sub-100 fs pulses lasers from Yb:GdScO3 crystal based on semiconductor saturable absorber mirrors

Sub-100 fs laser pulses are generated in a Yb:GdScO3 passively mode-locked laser based on a semiconductor saturable absorber mirror. The laser operates in the continuous wave mode-locked state with a repetition frequency of 81 MHz and a pulse width of 98 fs. The output pulses exhibit a high signal-to-noise ratio of 60 dB in the radio-frequency spectra, with a central wavelength of 1064.4 nm and a full width at half maximum of 12.4 nm. This achievement marks the first successful demonstration of an ultrafast laser in a Yb:GdScO3 crystal, validating Yb:GdScO3 as an ideal medium for generating ultrafast lasers.

2.8-µm polarization-maintaining Er fiber laser mode-locked by a GaSb-based SESAM

A GaSb-based SEmiconductor Saturable Absorber Mirror (SESAM) enables continuous-wave picosecond mode-locked operation with excellent stability of a polarization-maintaining mid-infrared Er:ZBLAN fiber laser. The GaSb-based SESAM mode-locked fiber laser delivers an average output power of 190 mW at 2.76 µm at a repetition rate of 32.07 MHz (corresponding to a pulse energy of ∼6 nJ) and exhibits a high signal-to-noise ratio of ∼80 dB. The polarization extinction ratio is more than 23 dB. By employing an intracavity diffraction grating, the laser wavelength is continuously tunable across 2.706–2.816 µm. Passively Q-switched operation of this laser is also demonstrated.

Upconversion-pumped femtosecond thulium laser at 2309 nm mode-locked by a GaSb-based SESAM

We report on a femtosecond thulium laser operating on the 3H4 → 3H5 transition with upconversion pumping around 1 µm and passively mode-locked by a GaSb-based SEmiconductor Saturable Absorber Mirror (SESAM). This laser employs a 6 at.% Tm:LiYF4 laser crystal and a polarization maintaining Yb-fiber master oscillator power amplifier at 1043 nm as a pump source addressing the 3F4 → 3F2,3 excited-state absorption transition of Tm3+ ions. In the continuous-wave regime, the Tm-laser generates 616 mW at ∼2313 nm with a slope efficiency of 10.0% (vs. the incident pump power) and a linear polarization (π). By implementing a type-I SESAM with a single ternary strained In0.33Ga0.67Sb quantum well embedded in GaSb for sustaining and stabilizing the soliton pulse shaping, the self-starting mode-locked Tm-laser generated pulses as short as 870 fs at a central wavelength of 2309.4 nm corresponding to an average output power of 208 mW at a pulse repetition rate of 105.08 MHz and excellent mode-locking stability. The output power was scaled to 450 mW at the expense of a longer pulse duration of 1.93 ps. The nonlinear parameters of the SESAM are also reported.

Diode-pumped 88 fs SESAM mode-locked Tm,Ho:CLNGG laser at 2090 nm

We report on a passively mode-locked Tm,Ho:CLNGG laser operating at 2090 nm, pumped by a multimode fiber-coupled 793 nm laser diode, representing the first demonstration of a diode-pumped sub-100-fs mode-locked laser at 2.1 μm wavelength. Due to the disordered nature of the gain material that exhibits a broad and smooth gain profile, pulses as short as 88 fs were achieved with an average output power of 120 mW at a repetition rate of 70.3 MHz. Stable self-starting mode-locked operation was obtained using a semiconductor saturable absorber mirror based on the GaSb material system.

Femtosecond pulse generation from a semiconductor saturable absorber mirror mode-locked Yb:LuYAG mixed crystal laser

We report on a femtosecond semiconductor saturable absorber mirror (SESAM) mode-locked Yb:LuYAG laser. Pumped by a 976 nm single-mode fiber laser, a self-starting mode-locked Yb:LuYAG laser was demonstrated, delivering a 618-mW output power with 140-fs pulses and a 95.4-MHz repetition rate. The output spectrum is centered at 1053 nm with a spectral width of 10.4 nm. To the best of our knowledge, this is the shortest pulse ever generated from a mode-locked Yb:LuYAG laser.

Difference of carrier dynamics in a semiconductor saturable absorber mirror with and without B+ ion-implantation.

Three samples whose growth temperatures were 450°C, 500°C, and 560°C for S E S A M 1, S E S A M 2, and S E S A M 3, respectively, were tested by femto-second time-resolved transient absorption spectroscopy. The results indicate that the carrier dynamics of excited state absorption were dominant, and the lifetimes of carriers trapped by defect levels were about tens of pico-seconds. To further study the influence of carrier dynamics and recovery time of samples by ion-implantation, B + ions of 80 and 130 KeV were implanted into the samples with dose of 1014/c m 2. The modified samples showed a dominance of ultra-fast carrier dynamics of ground-state bleaching and direct recombination, which lasted for hundreds of femto-seconds, over excited state absorption. Additionally, carrier fast trapping was observed to be competitive with the excited state absorption process. After ion-implantation, the carrier dynamics of carrier trapping were enhanced, which contributed to forming an ultra-short laser, while the carrier dynamics of absorption of the excited state were suppressed. The conclusion that defect levels were partially eliminated by B + ion-implantation can be drawn.

SESAM mode-locked Yb:GdScO3 laser.

We report on the investigation of continuous-wave (CW) and SEmiconductor Saturable Absorber Mirror (SESAM) mode-locked operation of a Yb:GdScO3 laser. Using a single-transverse-mode, fiber-coupled InGaAs laser diode at 976 nm as a pump source, the Yb:GdScO3 laser delivers 343 mW output power at 1062 nm in the CW regime, which corresponds to a slope efficiency of 52%. Continuous tuning is possible across a wavelength range of 84 nm (1027-1111 nm). Using a commercial SESAM to initiate mode-locking and stabilize soliton-type pulse shaping, the Yb:GdScO3 laser produces pulses as short as 42 fs at 1065.9 nm, with an average output power of 40 mW at 66.89 MHz. To the best of our knowledge, this is the first demonstration of passively mode-locking with Yb:GdScO3 crystal.

Sub-60-fs mode-locked Tm,Ho:CaYLuAlO4 laser at 2.05 µm

Tm,Ho:CaYLuAlO4 (Tm,Ho:CALYLO) crystal has wide emission spectra both for π-polarization and σ-polarization, showing significant potential for the generation of ultrashort pulses. Here, a widely tunable and passively mode-locked laser operation based on Tm,Ho:CALYLO crystal under two polarizations was demonstrated for what we believe to be the first time ever. For π-polarization, a maximum output power of 1.52 W and a tuning range of 255.3 nm were achieved in the continuous wave (CW) regime. In the mode-locked regime, a pulse duration of 68 fs and an average output power of 228 mW were achieved upon GaSb-based semiconductor saturable absorber mirror (SESAM). As for σ-polarization, a broader tuning range of 267.1 nm was realized, leading to the shorter pulse duration of 58 fs at 79.7 MHz repetition rate.

Continuous-wave and SESAM mode-locked operation of a Yb:YSr3(PO4)3 laser.

We report on the continuous-wave (CW) and, for what we believe to be the first time, passively mode-locked (ML) laser operation of an Yb3+-doped YSr3(PO4)3 crystal. Utilizing a 976-nm spatially single-mode, fiber-coupled laser diode as pump source, the Yb:YSr3(PO4)3 laser delivers a maximum CW output power of 333 mW at 1045.8 nm with an optical efficiency of 55.7% and a slope efficiency of 60.9%. Employing a quartz-based Lyot filter, an impressive wavelength tuning range of 97 nm at the zero level was achieved in the CW regime, spanning from 1007 nm to 1104 nm. In the ML regime, incorporating a commercially available semiconductor saturable absorber mirror (SESAM) to initiate and maintain soliton-like pulse shaping, the Yb:YSr3(PO4)3 laser generated pulses as short as 61 fs at 1062.7 nm, with an average output power of 38 mW at a repetition rate of ∼66.7 MHz.

Growth, spectroscopy and SESAM mode-locking of a "mixed" Yb:Ca(Gd,Y)AlO4 disordered crystal.

We present the growth, spectroscopy, continuous-wave (CW) and passively mode-locked (ML) operation of a novel "mixed" tetragonal calcium rare-earth aluminate crystal, Yb3+:Ca(Gd,Y)AlO4. The absorption, stimulated-emission, and gain cross-sections are derived for π and σ polarizations. The laser performance of a c-cut Yb:Ca(Gd,Y)AlO4 crystal is studied using a spatially single-mode, 976-nm fiber-coupled laser diode as a pump source. A maximum output power of 347 mW is obtained in the CW regime with a slope efficiency of 48.9%. The emission wavelength is continuously tunable across 90 nm (1010 - 1100 nm) using a quartz-based Lyot filter. With a commercial SEmiconductor Saturable Absorber Mirror to initiate and maintain ML operation, soliton pulses as short as 35 fs are generated at 1059.8 nm with an average output power of 51 mW at ∼65.95 MHz. The average output power can be scaled to 105 mW for slightly longer pulses of 42 fs at 1063.5 nm.

Mode-locked Yb:CALGO laser with high peak power sub-100 fs pulses at 26.9 MHz repetition rate

The development of a diode-pumped high peak power sub-100 fs mode-locked Yb:CALGO laser is presented. The laser delivered 1.3 W of output power with 81 fs pulses at a repetition rate of 26.9 MHz. The corresponding pulse energy was 48 nJ and the peak power was 596 kW. The cavity was extended by using a 1:1 imaging telescope. Mode locking was based on a semiconductor saturable absorber mirror and chirped mirrors were used to compensate for the positive dispersion in the cavity. To the best of our knowledge, this is one of the shortest pulse durations obtained from Yb:CALGO laser around this low repetition rate.

Experimental characterization of quasiperiodic route to chaos in a VECSEL with SESAM

We analyze the temporal dynamics of an optically-pumped quantum well vertical external-cavity surface-emitting laser (VECSEL) with a Semiconductor Saturable Absorber Mirror (SESAM) using the time series obtained when varying the pump power. We unveil the quasiperiodic route to chaos in the system by characterizing the Fourier spectra, the attractors in phase space, and the Lyapunov exponents for each temporal behavior observed: periodicity, quasiperiodicity, and chaos. Thus, we provide a complete description of this experimental observation of the route to chaos in a VECSEL-SESAM system.

Femtosecond pulsed laser technology and applications

This paper describes femtosecond pulsed laser technology and related applications. The focus is on two core femtosecond pulsed laser technologies: femtosecond pulsed laser generation and amplification. In the generation of femtosecond pulsed lasers, mode-locking techniques, Kerr-lens mode-locking, and semiconductor saturable absorber mirrors are presented; in the amplification of femtosecond pulsed lasers, chirped-pulse amplification and coherent synthesis techniques are presented. This paper analyses the applications of femtosecond pulsed lasers in both the biomedical and manufacturing sectors and gives the development trends as well as the challenges of femtosecond laser technology. Femtosecond lasers are now used in a wide range of applications. Femtosecond pulsed lasers will develop in the directions of high power, miniaturisation, intelligence and precision. Laser tweezers will become the new direction of development in the future.