Semiconductor Quantum Plasma Research Articles

Unveiling non-monochromatic modes and nonlinearity in Piet Hein quantum semiconductor waveguides

We investigate the propagation characteristics of transverse electric (TE) and transverse magnetic (TM) modes in a semiconductor quantum plasma-filled coaxial waveguide with a Piet Hein cross-section. The unique geometry of the Piet Hein cross-section offers intriguing possibilities for tailoring modal properties and exploiting novel nonlinear phenomena. Using analytical and numerical methods, we unveil the non-monochromatic behaviour of TE and TM modes, characterized by distinct peaks and troughs in their field components. The Ez\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$E_{z}$$\\end{document} component of the TM mode exhibits a suppressed field within the central core and higher concentration in the cladding region, potentially minimizing energy loss within the waveguide. The Eρ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$E_{\\rho }$$\\end{document} component exhibits pronounced oscillations near the waveguide boundaries, suggesting constructive and destructive interference patterns. The Eξ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$E_{\\xi }$$\\end{document} component displays a non-monotonic behaviour with multiple pits and bumps, highlighting the interplay between the TE mode, the Piet Hein geometry, and the semiconductor quantum plasma properties. The Bρ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$B_{\\rho }$$\\end{document} component of the TM mode exhibits a non-monochromatic behaviour with multiple maxima and minima, attributed to the complex interactions between propagating waves with different phase shifts. The Bξ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$B_{\\xi }$$\\end{document} component exhibits a non-uniform distribution with distinct pits and bumps, with a resurgence towards the waveguide edges potentially due to higher-order mode contributions and local field enhancement effects. Our findings pave the way for the development of novel photonic devices with enhanced functionalities based on Piet Hein semiconductor quantum plasma waveguides.

Dispersion, Threshold and Gain Characteristics of Brillouin Scattered Stokes Mode in Ion-Implanted Semiconductor Quantum Plasmas

Dispersion, Threshold and Gain Characteristics of Brillouin Scattered Stokes Mode in Ion-Implanted Semiconductor Quantum Plasmas

Temperature-induced disruptive growth rate behavior due to streaming instability in semiconductor quantum plasma with nanoparticles

The nature of the growth rate due to streaming instability in a semiconductor quantum plasma implanted with nanoparticles has been analyzed using the quantum hydrodynamic model. In this study, the intriguing effect of temperature, beam electron speed, and electron-hole density on growth rate and frequency is investigated. The results show that the growth rate demonstrates a nonlinear behavior, strongly linked to the boron implantation, beam electron streaming speed and quantum correction factor. A noteworthy finding in this work is the discontinuous nature of the growth rate of streaming instability in boron implanted semiconducting plasma system. The implantation leads to a gap in the growth rate which further gets enhanced upon increase in concentration of implantation. This behavior is apparent only for a specific range of the ratio of thermal speed of the electrons to that of the holes.

An appearance of classical matter from the self-organizing process of quantum systems

We present a quantum effect where matter follows the classical Hamilton-Jacobi equation, which emerges from quantum systems with Riemannian structures, as in standard quantum systems such as semiconductor heterostructures, quantum plasmas, and quantum dots. The proposed effect is derived from solving a standard elliptic partial differential equation of the radial part of the wave function, which is equivalent to a vanished quantum potential of the system. We then analyze such an effect and examine how the classical matter tends to be denser at the boundary region of the system when the quantum system is given in a finite region in space. While the proposed effect is derived from the hydrodynamical formulation of quantum mechanics, the results are free from any interpretation of quantum mechanics.

Comprehensive Review on Various Instabilities in Semiconductor Quantum Plasma

Comprehensive Review on Various Instabilities in Semiconductor Quantum Plasma

Criteria of the electron pumping in electron-hole quantum plasma

The degradation of quantum semiconductor plasma during electron pumping is an important problem since it has several applications in the technological industry. Moreover, the identification of such a problem cannot be accomplished by experiment alone and a further theoretical investigation is required. Owing to the energy gap of semiconductors, electrons should acquire energy in order to move from the valence band to the conduction band. Therefore, to employ the quantum fluid model that includes the exchange-correlation potentials, Bohm potential, and the degenerate pressure, the electron-hole lifetime should be greater than the plasma oscillation time. If the latter condition is not satisfied, the quantum fluid model failed to describe the system and it is convenient to use the density functional theory. As a result of that, we apply the quantum fluid model to GaN where the plasma oscillation has a time of 0.002 ps while the electron-hole lifetime is 1 ps. The modified Kadomtsev-Petviashvili (mKP) equation had been obtained using a new set of stretched coordinates as the Kadomtsev-Petviashvili (KP) equation had been derived in (Afify et al 2019 Chaos Soliton Fract 124, 18–25). Our findings determine whether the quantum fluid model is valid or not in the case of semiconductor plasma. Studying exchange effects in a dynamic context has certain limitations. Thus, we stressed that the more accurate approaches introduced in the literature are hard to apply for nonlinear issues. Further, the applicability of our results is discussed, but not this much. Moreover, the numerical results showed that the electron beam parameters and quantum effects have significant effects on the growth of the solitary waves.

Surface plasma wave in spin-polarized semiconductor quantum plasma

AbstractThe possibilities of surface plasma wave (SPW) on a metal-vacuum interface in semiconductor quantum plasma by considering the effects of Coulomb exchange (CE) interaction and the spin-polarization has been explored. The dispersion for the SPW has been setup using the modified quantum hydrodynamic (QHD) model taking into account the Fermi pressure, the quantum Bohm force, the CE, and the electron spin. The optical gain of SPW has been evaluated. It is found that CE effects and spin-polarization increases the wave frequency and enhances the gain during the stimulated emission.

Overtaking Collisions of Electrostatic N-Soliton in Electron–Hole Quantum Plasmas

The effects of overtaking collisions of electrostatic multisolitons (i.e., N-soliton) in an electron–hole dense semiconductor plasma are examined employing the reductive perturbation theory (RPT) and Hirota’s bilinear method (HBM). A Korteweg-de Vries equation (KdVE), which admits N-soliton, is derived using the RPT. In addition, HBM is applied that resulted in two-soliton and three-soliton solutions. The exchange of energies due to the overtaking collisions between the electrostatic N-soliton are analyzed by varying physical parameters, such as the quantum semiconductor plasma number density and the exchange-correlation terms for electrons and holes, which causes alternation in the behavior of solitons. It is found that the existence of exchange-correlation potentials leads to a diminishing in a phase shift of N-soliton.The current study is an attempt to further exemplify the essential properties of N-soliton in electron–hole plasmas and their applications in the modern semiconductor electronic devices of nanoscale size.

The nonlinear wave in semiconductor quantum plasma for laser beam in a self-consistent plasma channel

In this paper investigating the current task, our emphasis is on distributed a serious laser beam in a self-made plasma channel. As the intensity of the laser beam increases, the medium displays the neuromuscular electrical conductivity functioning as a result of the mass effectiveness of the effectiveness of the electrons as well as the intensity of the electrons. Based on Wentzel–Kramers–Brillouin and paraxial ray theory, the steady-state solution of an intense, Gaussian electromagnetic beam is studied. The differential equation of the distance with the beam width parameter is derived, including the relativistic effects of self-focusing (SF) and self-channeling ponder motive. Plasma propagation is a radial dynamical force, depending on the width of the beams and σp greater, plasma ratio frequency screws. Once the distribution regimes, the beam power beamwidth is obtained in plane. The σp is a particular value characterized by standard deviation, oscillation and diffusion regimes such as self focusing. The corresponding center parameters are intended for introduction of the plasma density curve and the laser beam is spatially analyzed to the spatial plasma. Performing this margin can lead to a long distance laser beam guide. The disadvantage of numerical predictions is done for laser plasma interaction studies for common factors.

Investigations of energy and an exchange of energies between electrostatic solitons: higher-order corrections and efficiency improvement of semiconductor plasmas

ABSTRACT Investigations of the nonlinear excitation and collisions of electrostatic solitons in a dense semiconductor plasma composed of electrons and holes are improved by using the higher-order corrections. Applying the extended Poincaré-Lighthill-Kuo (EPLK) method to obtain the Korteweg–de Vries (KdV) equations, which govern the nonlinear excitation of electrostatic solitons. Furthermore, the phase shift equations due to the collisions between electrostatic solitons are obtained. A theoretical analysis is improved by employing the KdV equations with the effects of the fifth – order dispersion terms. The numerical illustrations demonstrate that the higher-order soliton energy depends significantly on the quantum semiconductor plasma number density. On the other hand, the density of the semiconductor plasma has a weak effect on the lowest-order soliton energy. Therefore, one has to be careful about the choosing semiconductor plasma parameters to avoid any deficiency of the modern semiconductor devices.

Amplitude Modulation of Weakly Nonlinear Electrostatic Solitary Waves in Ultrarelativistic Degenerated Semiconductor Quantum Plasma

The amplitude modulation of weakly nonlinear electrostatic solitary waves is investigated using standard quantum hydrodynamic model with multiple scale perturbation technique by deriving a nonlinear Schrodinger equation for ultrarelativistic degenerate semiconductor quantum plasma. Due to nonlinear development of amplitude of electrostatic solitary waves, stable and unstable wave packets are generating and it is numerically analyzed that critical wave number separating stable and unstable wave packets is significantly dependent upon ultrarelativistic parameter, quantum Bohm potential, degenerate pressure, hole-electron mass ratio, and hole-electron temperature ratio. It is seen that critical wave number is varying in a different semiconductor material. Further instability growth characteristic is also examined for different semiconductors. In linear analysis, a dispersion relation has been evaluated analytically and the nature of two wave modes (slow frequency and fast frequency) is studied by varying different plasma parameters.

Space-charge solitary waves and double layers in n-type compensated semiconductor quantum plasma

Using quantum hydrodynamic (QHD) model and standard reductive perturbation method, we have investigated the formation and characteristics of space-charge solitary waves and double layers in n-type compensated drifting semiconductor plasma with varying doping profiles. Through numerical analysis, it is shown that the structures of space-charge solitary waves and double layers depend significantly on electron drift and compensation parameter which measures a comparative proportion of the donor, acceptor and intrinsic ion concentrations.

Impact of Relativistic Electron Beam on Hole Acoustic Instability in Quantum Semiconductor Plasmas

Abstract We studied the influence of the classical relativistic beam of electrons on the hole acoustic wave (HAW) instability exciting in the semiconductor quantum plasmas. We conducted this study by using the quantum-hydrodynamic model of dense plasmas, incorporating the quantum effects of semiconductor plasma species which include degeneracy pressure, exchange-correlation potential and Bohm potential. Analysis of the quantum characteristics of semiconductor plasma species along with relativistic effect of beam electrons on the dispersion relation of the HAW is given in detail qualitatively and quantitatively by plotting them numerically. It is worth mentioning that the relativistic electron beam (REB) stabilises the HAWs exciting in semiconductor (GaAs) degenerate plasma.

The effects of geometrical configurations on the head collision on nonlinear solitary pulses in a quantum semiconductor plasma: A case study on GaAs semiconductor

An investigation is presented to examine nonlinear electrostatic waves in a quantum semiconductor plasma. A quantum semiconductor plasma model consisting of electrons and holes is going to be used, which includes exchange–correlation potentials, the quantum recoil effect, and degenerate pressures of electrons and holes. Actually, a nonlinear solitary pulse can be used to represent the intrinsic coherent electrostatic wave in a quantum semiconductor plasma. The propagation and the collision of nonlinear solitary pulses are examined by the extended Poincaré-Lighthill-Kuo method. Typical values for the GaAs semiconductors are employed to investigate the basic characteristics of solitary pulses. The numerical studies show that the energies and then the trajectories of nonlinear solitary pulses after the collision are significantly changed due to the effects of the exchange and correlation potentials and the variety in the studied system's geometry. The results obtained here may be useful for gaining a better understanding of the basic features of the nonlinear solitary pulses in quantum semiconductor plasmas.

Landau quantization effects on hole-acoustic instability in semiconductor plasmas

The growth rate of the hole acoustic waves (HAWs) exciting in magnetized semiconductor quantum plasma pumped by the electron beam has been investigated. The instability of the waves contains quantum effects including the exchange and correlation potential, Bohm potential, Fermi-degenerate pressure, and the magnetic quantization of semiconductor plasma species. The effects of various plasma parameters, which include relative concentration of plasma particles, beam electron temperature, beam speed, plasma temperature (temperature of electrons/holes), and Landau electron orbital magnetic quantization parameter η, on the growth rate of HAWs, have been discussed. The numerical study of our model of acoustic waves has been applied, as an example, to the GaAs semiconductor exposed to electron beam in the magnetic field environment. An increment in either the concentration of the semiconductor electrons or the speed of beam electrons, in the presence of magnetic quantization of fermion orbital motion, enhances remarkably the growth rate of the HAWs. Although the growth rate of the waves reduces with a rise in the thermal temperature of plasma species, at a particular temperature, we receive a higher instability due to the contribution of magnetic quantization of fermions to it.

Acousto–electric interaction in inhomogeneous semiconductor quantum plasma

In the present paper, an analytical study has been presented to examine the acousto–electric interactions in piezoelectric inhomogeneous semiconductor quantum plasma. The analysis is made by deriving the quantum-modified dispersion relation and subsequently deducing the expression of gain coefficient of acoustic wave using quantum hydrodynamic (QHD) model for inhomogeneous semiconductor plasma. The linearly and quadratically varying plasma density profiles have been chosen to investigate the effects of inhomogeneity through density gradient. We address the role of quantum parameter-H, scale length of density variation L and propagation distance z on gain profiles of acoustic wave. It has been found that the presence of these parameters can significantly modify the crossover and resonance characteristics of acoustic wave. Results reveal that the crossover point for wave amplification is found to be greater than unity in inhomogeneous quantum plasma media while the resonance condition is effectively influenced by these parameters in all the considered cases. We found that more acoustic gain would be possible if the acoustic mode propagates from low to high plasma density region in the medium. It is also found that as the medium tends to have high inhomogeneity, more pronounced modifications on resonance characteristics of acoustic wave are expected.

Deformed Korteweg-de Vries equation of two solitons in a quantum semiconductor plasma in the presence of electron-phonon collision frequency and exchange-correlation potential

The effect of electron-phonon collision frequency, exchange-correlation potential, quantum term and degenerate pressure on the nature of solitary waves in a quantum semiconductor plasma is investigated. It is observed that the width of the solitary waves change with variation of different parameters for the GaAs semiconductor. A deformed Korteweg-de Vries equation is obtained for propagation of nonlinear waves in a quantum semiconductor plasma, and the effect of different parameters on the two-soliton solution of the equation are also presented.

Self-focusing of Hermite-cosh-Gaussian laser beam in semiconductor quantum plasma

Self-focusing of Hermite-cosh-Gaussian (HchG) laser beam in semiconductor quantum plasma (ScQP) has been presented by considering the decentred parameter and quantum effect. We drive the equation of beam width parameter by using parabolic wave equation and solved it numerically by using WKB approximation. Our simulation results show that HchG beam gives freedom to source parameters that influence the self-focusing significantly. Additional self-focusing has been observed in ScQP than that of classical case of reference. The quantum plasma also adds pinching effect to laser propagation in semiconductor like germanium which further enhances the self-focusing more and more in ScQP.

Propagation and interaction of two soliton in a quantum semiconductor plasma with exchange correlation effects

Collisions of solitary pulses in a four species quantum semiconductor plasma consisting of degenerate electrons, degenerate holes, and non-degenerate ions are investigated. The electron and hole exchange-correlation forces between the identical particles when their wave functions overlap due to the high number densities are considered. Using the extended Poincarê–Lighthill-Kue method in opposite directions, two Korteweg-de Vries equations are derived. Hirota's method is used to derive the analytical phase shifts after the collision of one soliton and two soliton. Typical values for GaAs, GaSb, GaN, and InP semiconductors are considered to analyze the effects after collisions.

Parametric interactions of acoustic waves in semiconductor quantum plasmas with strain dependent dielectric constants

Using quantum hydrodynamic model (QHD) of semiconductor plasma for a one-component we present an analytical investigation on parametric interaction of a laser radiation in an unmagnetised material with a strain-dependent dielectric constant. The nonlinear current density and third order susceptibility are analyzed in different wave number regions in presence and absence of quantum effect. We present the qualitative behavior of threshold pump intensity with respect to wave number in presence and absence of quantum effect. The numeric estimates are made for n-BaTiO3 crystals at 77k duly irradiated by pulsed 10.6μm CO2 laser. It is found that the quantum correction through Fermi temperature and Bohm potential terms modifies the threshold characteristics.