Digital Memory Research Articles

Spirits in the Material World: Older Adults' Personal Curation of Memory Artifacts

Memory artifacts are personal and collective belongings that elicit deliberate or involuntary memories. They are significant as objects of continuity, vessels for identity, and links to past relationships and history-for individuals, families, and communities. Drawing from in-depth interviews and cultural probe sessions with 16 individuals over 65, we consider how older adults curate and interact with their personal artifacts that embody and inform memory. Participants' hands-on experiences with memory artifacts uncover a heterogeneous set of personal curation practices and identify tensions that result from the competing goals of creating a legible narrative or legacy for themselves, their family, and their communities. The transition from physical to digital memory artifacts often perpetuates tension but can also create moments of reflection. These findings contribute a set of design considerations for supporting curation practices. This paper joins and expands upon CSCW scholarship regarding the importance of memory artifacts and the ongoing challenges of retaining individual memory and history over time, which, if managed effectively, can benefit and sustain family and community history at large.

An Overview of the Future of Memory Cells: Advances in SSD Technology

This paper explores the topic of Solid-State Drives (SSDs) and NAND flash memory. Information of this paper is mainly obtained from authoritative academic websites and papers related to SSDs and flash memory. Memory cells are fundamental components in various electronic devices. In the field of data storage, SSDs represent the latest generation of storage devices, offering significantly better performance and functionality than traditional hard disk drives (HDDs). NAND flash memory chips are crucial component of SSDs, particularly 3D NAND, which exhibits exceptional performance and holds significant potential for future advancements. This paper will commence by providing an overview of SSDs and HDDs, followed by a comparison between NAND flash and NOR flash, and ultimately analysing the future of NAND flash memory technology employed in SSDs, with a focus on elucidating the advantages of 2D NAND over 3D NAND. Additionally, this paper explains a few challenges that NAND technology faces currently, as well as some possible solutions.

Competitive plasticity to reduce the energetic costs of learning.

The brain is not only constrained by energy needed to fuel computation, but it is also constrained by energy needed to form memories. Experiments have shown that learning simple conditioning tasks which might require only a few synaptic updates, already carries a significant metabolic cost. Yet, learning a task like MNIST to 95% accuracy appears to require at least 108 synaptic updates. Therefore the brain has likely evolved to be able to learn using as little energy as possible. We explored the energy required for learning in feedforward neural networks. Based on a parsimonious energy model, we propose two plasticity restricting algorithms that save energy: 1) only modify synapses with large updates, and 2) restrict plasticity to subsets of synapses that form a path through the network. In biology networks are often much larger than the task requires, yet vanilla backprop prescribes to update all synapses. In particular in this case, large savings can be achieved while only incurring a slightly worse learning time. Thus competitively restricting plasticity helps to save metabolic energy associated to synaptic plasticity. The results might lead to a better understanding of biological plasticity and a better match between artificial and biological learning. Moreover, the algorithms might benefit hardware because also electronic memory storage is energetically costly.

Enhanced performance of flexible BiFeO3 ferroelectric memory with Mica substrate via SrTiO3 buffer layer

BiFeO3 (BFO) application in flexible wearable devices is garnering interest because of its unique ferroelectric and magnetic properties. However, the integration of high-quality BFO films onto flexible substrates presents significant technical challenges. Here, we successfully fabricated high-quality BFO films on mica substrates by using pulsed laser deposition, and report the fatigue characteristics of BFO films on flexible substrates for the first time. The results demonstrated that, after 108 bipolar switching cycles, the polarization only degraded by 0.28%, indicating superior fatigue characteristics compared to previously reported BFO films. Additionally, the device ferroelectric properties remained largely unchanged, with a bending radius of 3.5 mm. The fabricated flexible Pt/BFO/La0.65Sr0.35MnO3(LSMO)/SrTiO3(STO)/mica non-volatile memory devices exhibited mechanical flexibility and fatigue resistance. These findings not only highlight the potential of flexible BFO films for wearable electronic devices and flexible memory devices, they also provide valuable insight for the future development of high-performance flexible ferroelectric materials.

The usage of family audiobooks as a legacy for grieving children — an exploratory quantitative analysis among terminally ill parents and close persons

BackgroundSince 2017, terminally ill parents with dependent children under the age of 18 have been able to record an audiobook for their dependent children. This service allows them to narrate how they would like to be remembered in their voice. The family audiobook is a professionally supported, voluntary, free service that is unique in Germany. There is little research on digital memories for children. The study aims to understand how this service is used and its influence on children through responses of terminally ill parents and close persons.MethodsAn anonymous online survey, accessible between September 2023 and November 2023, was conducted among terminally ill parents and their close persons with support from the Family Audiobook Association in Germany. Analyses were carried out using SPSS.Results186 respondents, 95 terminally ill parents, and 91 close persons completed the online survey. Almost all terminally ill parents felt eased to have recorded a family audiobook. The two groups showed differences in how they used the family audiobook and how often they listened to it. While some children listen to the family audiobook with their bereaved parents or friends, other children are not yet ready for this, according to the open-ended responses of terminally ill parents and close persons.ConclusionsThe family audiobook provides a valuable opportunity for terminally ill parents with dependent children under the age of 18 to tell their own biographical story, offer support to the bereaved in remembering, and preserve the voice of the deceased for the children. In addition, this approach could help healthcare professionals to reduce the stress associated with providing end-of-life care for terminally ill parents.

SuFEx‐based Transparent Polysulfates and their Applications in Tunable Resistant Electrical Memory Materials

AbstractVisibly transparent electron devices are current research highlights, which are found at the “neotype” stage of technical development for the usage in the next generation “see‐through” electronic devices. However, less attention is paid to transparent semiconductor memory devices, and hence, achieving such “see‐through” electronic devices are still partially limited by lacking the easily achievable and cost‐effective transparent memory materials. Herein, three visible light transparent polysulfate‐based memory devices are reported, e.g. ITO/P‐BPS/Al, ITO/P‐TPA/Al, and ITO/P‐TPABPS/Al, that displayed DRAM, WORM, and FLASH effects, respectively. The mechanisms of the observed memory behavior of each memory material are proposed on the basis of computational simulation. Remarkably, these polysulfates‐based memory materials are obtained by simply using different main‐chain repeating units, suggesting a wide application potential of polysulfate as functionalized materials.

Supercritical CO2-Guided Passivation Strategies for Oxygen Vacancy Modulation in LaMnO3.

The development of 2D magnetic materials and the modulation of intrinsic magnetism are essential for the exploration of new materials in the field of information storage. Despite its strong ferromagnetic properties, LaMnO3 is hindered by a high number of oxygen defects, which result in a relatively short lifetime when employed in electronic memory devices. Here the successful transformation of bulk LaMnO3 into a 2D structure using supercritical carbon dioxide.is reported. This technique enables the successful modulation of the magnetic properties of the material. Interestingly, it is found that the oxygen defect is repaired, which is in sharp contrast to conventional perovskites. These promising results demonstrate the potential of using the magnetic properties of LaMnO3, which is of great importance in the context of expanding its application in electronic devices.

Cloud-Enabled Mobile-Based Approach for Enhancing Psychosis Cognitive Assessment.

The study aims to assess the feasibility of developing cognitive tools and integrating the cloud-enabled mobile-based technology into routine clinical practice for psychotic patients. Furthermore, it aims to investigate the correlation between the results obtained using developed tools and established clinical measures, offering valuable insights into tools for enhancing the accuracy, efficiency and ease of administration of cognitive evaluation. A total of 160 participants were recruited (83 outpatients with early course of schizophrenia (SZs) and 77 healthy controls [HCs]). The participants were subjected to cognitive assessments, and the data were collected by cognitive assessment digital smart tool (CADST) and PGI memory scale (PGIMS) to assess attention (ATT) and working memory (WM). Outcome measures of these parameters were digit span (score,time) for ATT and delayed recall (score,time) for WM. The total average score in HCs was significantly higher than in SZs for ATT and WM, and CADST was significantly correlated with PGIMS for evaluating ATT and WM. Furthermore, test completion times for ATT and WM were observed more in SZs although most of SZs had achieved scores as high as that of HCs. The potential of CADST as a valuable addition to the conventional cognitive assessment method is highlighted, showing promising feasibility and strong correlations with the established tool. The importance of integrating time parameters suggests broader implications for understanding cognitive function beyond conventional scoring metrics. It demonstrates the effective and accurate approach for large-scale screening of cognitive parameters in public service settings.

Electron Spin Polarization and Memory Effect in Supramolecular Gel Exclusively From Achiral Building Blocks.

Chirality has been identified as a crucial component in achieving high spin selectivity in organic polymers and π-conjugated molecules. In particular, chiral polymers and supramolecular structures have emerged as promising candidates for spin filtering due to the chirality-induced spin selectivity (CISS) effect. However, the CISS effect in supramolecular systems has not been extensively investigated, despite its potential for applications in spintronics. In this work, for the first time, the potential applications of the CISS effect in supramolecular gel materials and shed light on its untapped possibilities have been successfully explored. The ability of supramolecular gel exclusively made from achiral building blocks to selectively filter electron's spin through the symmetry breaking has been demonstrated. Furthermore, this study shows that their spin filtering efficacy can be improved by using chiral solvents. More importantly, the CISS effect has been employed to explore a novel phenomenon referred to as the "spin memory effect", where the desired spin information is preserved by retaining the helicity even in the absence of the chiral solvent. These findings underscore the immense potential for spintronics applications that rely solely on achiral components, thereby paving the way for new possibilities in device design and functionality.

Co-optimizing of H-curing, stress, and thermal annealing—A more effective way for realizing FEOL-BEOL compatible eMRAM chip

Metallization, plasma, and thermal annealing used in magneto-resistive random access memory integration differs significantly from traditional interconnection processes, usually resulting in the device performance deterioration of metal-oxide-silicon field-effect transistors. Commonly used methods, such as hydrogen postalloying, may not be effective to recover performance when magneto-resistive random access memory is integrated. The study focused on the interplay between hydrogen content in the dielectric films, wafer configuration induced by film stress, and thermal annealing during the chip fabrication process. Post-thermal annealing can enhance the release of hydrogen from the dielectric films, which can repair the silicon–hydrogen bond breakage resulting from magneto-resistive random access memory integration. However, this process can also worsen wafer bowing in an undesired direction which is detrimental to the performance of metal-oxide-silicon field-effect transistors. Consequently, utilizing silicon nitride with specific hydrogen content, in conjunction with post-thermal annealing, can improve effectively both p-type and n-type metal-oxide-silicon field-effect transistors. This approach holds significant potential for application in more advanced technological nodes since it is compatible with traditional process and does not require more advanced fabrication equipment. Additionally, the resulting embedded magneto-resistive random access memory chips maintain competitive magnetic tunneling junction reliability in term of endurance and reflow resistivity.

Creating a City for All of Us: The Possible Role of the Fediverse in Archiving Civic Urban Memory

This paper attempts to build a case for adopting the model of the Fediverse to archive digital citizen-generated urban memory. Examining literature from several relevant fields of debate acts as a pragmatic foundation for reasoning to then outline potential core technical functionality for provision of such an archive, using the Mastodon app as an example. This ‘civic urban memory’ archive is considered as open, curated by citizens themselves and owned by them through civic public ownership in a context of technological sovereignty. Reflecting on issues of citizen self curated and moderated memory collection archives, and the potential for opt-in or anonymous archive posting may offer some mechanisms for fair and open curation, moderation and privacy protection in such archives. Conceptual backdrop for a civic urban memory archive is placed in current debates concerning civic technological platforms acting as a digital public good in a context of a techno-social contract for learning, with a co-constructed shared civic urban memory forming part of open incidental lifelong learning in a future learning city.

A Review Paper on Memory Fault Models and its Algorithms

The significance of testing semiconductor memories has grown significantly in the semiconductor industry due to the increased density of modern memory chips. This paper aims to investigate and analyze different types of functional faults present in today's memory technology. These faults include stuck-at faults, transition faults, coupling faults, address decoder faults, and neighborhood pattern-sensitive faults. The paper also delves into the techniques utilized to identify and detect these faults. In particular, the focus is placed on the importance of zero-one, checkerboard, and March pattern tests, which are widely employed to assess functional memory defects at different levels, such as the chip level, array level, and board level. Furthermore, the study provides an in-depth exploration of various test algorithms and thoroughly examines their fault coverage capabilities. Overall, this review paper provides valuable insights into the challenges posed by the dense nature of modern memory chips and offers a comprehensive analysis of functional faults in memory technology. By emphasizing the importance of testing and presenting a detailed exploration of fault detection methods and test algorithms, this study contributes to the advancement of reliable and high-performance memory devices in the electronic industry suggesting that MARCH algorithms outperform others when considering factors like fault coverage, power efficiency, area optimization, and time complexity parameters, making them the preferable choice for reliable and high-performance memory devices in the electronic industry.

AI As Artificial Memory: A Global Reconfiguration of Our Collective Memory Practices?

Abstract ai’s evolution has drastically reshaped our relationship with collective memory. Large ai models, like gpt and dall·E, have emerged as memory agents, assimilating vast cultural and historical data across centuries. Unlike traditional digital repositories, these tools employ an analogical approach, capturing the complexity of human memory. Their potential to weave together fragmented pieces of the past offers new ways to delve into historical and cultural data. Tech giants are ambitiously positioning these ai models as primary mediators for information access, integrating them into popular platforms. While they present new forms of collective memory, their widespread use raises profound ethical concerns. Challenges arise regarding historical truth, representativeness, and data reuse, leading to debates on data ownership and the governance of digital collective memory.

Semiconductor Memory for the Vehicles of Tomorrow

Semiconductor Memory for the Vehicles of Tomorrow

Digital activism in the future past: How Dutch Extinction Rebellion activists connect past, present and future in their memory work on Instagram

This article investigates the ways in which Dutch Extinction Rebellion activists discursively engage with the past, present and future on Instagram and leverage the platform’s affordances for mnemonic purposes. We argue that Extinction Rebellion activists, in their communication on the platform, connect these temporal planes retrospectively and prospectively. First, Extinction Rebellion activists use the past as a resource for present action aimed at producing lasting change. This relates to cultural reservoirs and repertoires of past injustices. Second, the present is perceived by Extinction Rebellion activists as a concern for future memory. The recording and documenting of climate injustices and the actions of the movement itself are examples of this. Both positive and negative imagined futures are used by Extinction Rebellion activists to legitimise and delegitimise past and present (in)action. In other words, Extinction Rebellion activists’ future imaginaries not just shape present action, but also shape their memory work. Instagram’s affordances of archivability, connectivity and spreadability are used by Extinction Rebellion to support their digital memory work. These socio-technical affordances are thus appropriated as mnemonic affordances for rhetorical and practical purposes. We support these claims through in-depth interviews with Extinction Rebellion activists and a thematic analysis of Instagram content shared by them.

ESTUDIO DE LA RESPUESTA I-V EN CELDAS DE MEMORIA DESb70Te30

Chalcogenide glasses are within the group of phase change materials and are promising in their application to non-volatile electronic memories. Under electrical pulses, they can circulate between two amorphous and crystalline structural states that are well differentiated in their conductivity. Assuming that the phase change mechanisms depend on the energy per unit volume delivered to the sensitive material, it is desirable to build cells on a micrometer scale, also considering that they could eventually be integrated into microelectronic manufacturing processes. In a previous work, we observed an abrupt decrease in the resistance of Sb70Te30base thin films deposited by laser ablation in a temperature range of approximately 445 K when the sample is heated at low rates. From the results of differential scanning calorimetry and X-ray diffraction on samples obtained by the same method, we associate the change in resistivity with the crystallization process. In this work, we build micrometric devices with rectangular surface with Sb70Te30assensitive material, deposited on coplanar electrodes with spacing L (8 and 16μm) and width W (4, 8, 16, 32 and 64μm). We measure the voltage response of the devices when excited by scanning of increasing current and, between consecutive scanning, we measure the remaining resistance by applying a constant voltage value. In curves I-V, we identify a transformation from the original state to one of lower resistance, attributable to crystallization, but it was not possible to perform the reverse transformation to a state of higher resistance. Starting from the lack of knowledge about the conductivity of the material, we simulate the electric field in the cell using the Finite Element Method. The electrical conductivity of the chalcogenide glass in its initial state (amorphous) was estimated by adjusting its value in the simulations with different geometries, minimizing the difference between the measured and simulated resistances.

Scheduling of memory chips for final testing on parallel machines considering power constraints and deteriorating effects

This paper delves into the intricate scheduling strategies crucial for the final testing phase of memory chip manufacturing within the semiconductor industry and other related sectors. It specifically addresses the complex serial-batching scheduling problem, where memory chips are tested on parallel machines under power constraints and chip deterioration effects. The processing time for each chip is significantly influenced by both the cumulative processing time of preceding chips and the power requirements for testing. We formulate this real-world optimization problem using a mixed integer nonlinear programming model. Exact solutions for small instances are obtained using a commercial solver. However, due to the model's complexity, we also develop heuristic solutions to efficiently handle larger instances. Based on the derivation of structural properties, we develop two tailored heuristic algorithms to determine the schedule for the final testing of memory chips. Additionally, we propose a refined Variable Neighborhood Search algorithm (VNS-H) that seamlessly integrates five local search strategies with two supplementary heuristic algorithms, dynamically alternating between them to ensure a balance between computational efficiency and the quality of the solutions obtained. Additionally, we establish a lower bound to validate the effectiveness of these solutions, particularly for large-scale instances. To validate the efficacy and robustness of our proposed metaheuristic algorithm, we conduct a rigorous comparison of the VNS-H algorithm with five other metaheuristic algorithms that have promising performance in various optimization problems. The results highlight the superior performance of the VNS-H algorithm. In small-scale instances, our VNS-H algorithm achieves an average makespan that is 5.52% lower compared to the original VNS. For large-scale instances, the VNS-H algorithm reduces the average makespan by 13.46% compared to VNS. Finally, we discuss the managerial implications of our findings, providing insights specifically tailored to semiconductor manufacturing enterprises based on the outcomes of this study.

Patterning of Organic Semiconductors Leads to Functional Integration: From Unit Device to Integrated Electronics.

The use of organic semiconductors in electronic devices, including transistors, sensors, and memories, unlocks innovative possibilities such as streamlined fabrication processes, enhanced mechanical flexibility, and potential new applications. Nevertheless, the increasing technical demand for patterning organic semiconductors requires greater integration and functional implementation. This paper overviews recent efforts to pattern organic semiconductors compatible with electronic devices. The review categorizes the contributions of organic semiconductor patterning approaches, such as surface-grafting polymers, capillary force lithography, wettability, evaporation, and diffusion in organic semiconductor-based transistors and sensors, offering a timely perspective on unconventional approaches to enable the patterning of organic semiconductors with a strong focus on the advantages of organic semiconductor utilization. In addition, this review explores the opportunities and challenges of organic semiconductor-based integration, emphasizing the issues related to patterning and interconnection.

Integrating error correction and detection techniques in RISC-V processor microarchitecture for enhanced reliability

An essential consideration in processor design is ensuring reliability, particularly in demanding environments such as outer space and nuclear plants. To mitigate the effects of errors and enable error recovery, processors need to incorporate fault tolerance techniques. One common type of error is SEU (Single Event Upset), which affects various microelectronic devices including microprocessors, microcontrollers, and semiconductor memory devices. While error mitigation techniques have been developed for processors based on architectures like ARM (Advanced RISC Machine) and MIPS (Million Instructions Per Second), there is a gap in research for open-source ISAs (Instruction Set Architecture) like RISC-V, which this paper aims to address. This paper focuses on designing a fault-tolerant microarchitecture for a RISC-V processor that can correct one-bit errors, detect up to two-bit errors, and integrate lockstep and pipeline rollback features at a lower LUTs (Look Up Tables) consumption by re-using the same hardware pipeline for error mitigation and recovery through instruction mimicking. By incorporating these features, the proposed approach enhances the system’s fault tolerance by detecting and correcting errors caused by transient events and achieves a lower effective die size upon realization compared to contemporary works. The proposed microarchitecture design was simulated and synthesized using the Vivado Design Suite 2023.1 and implemented on a Zynq 7000 SoC ZC702 Evaluation Kit.

Head in the clouds: A Deleuzoguattarian analysis of the environmental impacts of digital memory

Digital memory in the twenty-first century is a complex combination of human and nonhuman elements that interact in various combinations. In an era where environmental devastation is inundating the planet, it is vital to address the digital’s role in this degradation. This article explores various facets of the environmental implications of the digital storage of memory objects using Deleuze and Guattari’s assemblage theory. I identify the ways in which the digital realm is constructed, or ‘territorialised’ in Deleuzoguattarian terms. Beyond identifying the most common myths related to digital memory’s environmental impact, I expand on the work of information theorists such as Clements, Floridi, and Ess by forwarding three ways in which digital memory practices can be deterritorialised. These approaches include (1) knowledge acquisition, (2) taking response-ability, and (3) anti-redundancy movements. I argue that it is vital for cloud storage users, especially those who self-identify as environmentally conscious, to align their online memory practices with accurate understandings of the environmental impacts of the digital.