Semiconductor Materials Research Articles

Zero-Dimensional Lead-Free Perovskite Single Crystals for the Sensitive Detection of Visible Light and X-Rays.

The excellent performance and facile fabrication process of perovskite semiconductor materials make them highly promising candidates in the field of optoelectronic devices. Whether for visible light or X-rays, detectors with low detection limits can better identify weak light signals, significantly reducing the intensity of the received light source during device operation. In particular, for X-ray detectors, reducing X-ray dosage can greatly enhance the safety of X-ray imaging technology. This work develops detectors with low detection limit based on zero-dimensional (0D) MA3Bi2I9 single crystals. The anisotropy of MA3Bi2I9 and its influence on the detector's performance were investigated in detail. Detectors perpendicular to the (001) crystal plane have better weak light detection capability and require significantly less light intensity compared to devices parallel to the (001) crystal plane. X-ray detector with a limit of detection (LoD) of 0.68 nGyair s‒1 and sensitivity of 5072 μC Gyair‒1 cm‒2 was obtained. The present study offers comprehensive insights into the operational mechanism of layered perovskites, which can provide valuable guidelines for future designs and fabrications of highly sensitive photo and X-ray detectors.

A Family of Two-Dimensional Quaternary Compounds A2BXY2 (A = K, Na; B = Li, Na; X = Al, Ga, In; Y = P, As, Sb) for Optoelectronics Applications.

Expanding material types and developing two-dimensional (2D) semiconductor materials with high performance have been hotspots in the field. In this research, it is found that the 12 existing semiconductors A2BXY2 (A = K, Na; B = Li, Na; X = Al, Ga, In; Y = P, As, Sb) have a pronounced layered structure. We predict their 2D structures and properties, using first-principles calculations. Lower exfoliation energies confirm the feasibility of mechanical exfoliation from their bulk phases and that the 2D structures can be stabilized independently at room temperature. Interestingly, A2BXY2 has an anionic tetrahedral one-dimensional chain or two-dimensional mesh structure of [XY2]3- composed of elements III-V. All A2BXY2 monolayers exhibit direct or indirect band gap features (0.78-1.94 eV). More encouragingly, the A2BXY2 monolayers possess ultrahigh carrier mobilities (∼105 cm2 V-1 s-1) at room temperature. Furthermore, the results based on the nonequilibrium Green's function indicate that 2D A2BXY2 exhibits a high ON/OFF ratio (∼104). To sum up, the A2BXY2 family is an outstanding promising candidate for optoelectronics application.

Influence of the homotopy stability perturbation on physical variations of non-local opto-electronic semiconductor materials

In the current work, we investigate a novel technique specialized in stability perturbation theory to analyze the primary variations such as thermal, carrier, elastic, and mechanical waves in photothermal theory. The interface of the non-local semiconductor material is utilized to study the stability analysis. The problem is established using a 1D opto-electronic-thermoelastic deformation in the context of the photo-thermoelasticity (PTE) framework. The Laplace transform method is used to convert the system from the time domain into the frequency domain, and the boundary conditions for the thermal, elastic, and plasma waves are applied to the interface of the medium. The homotopy perturbation method was used as an innovative approach to analyze the stability of the non-local silicon’s primary physical fields. The numerical inversion method is applied, yielding many graphs focusing on important numerical factors such as non-local effects, thermo-energy, and thermo-electric coupling parameters. Investigating dual solutions between stable and unstable regions for critical parameters like thermo-electric and thermo-energy coupling factors demonstrates that the homotopy perturbation technique can effectively analyze the stability analysis. The comparison between silicon and germanium is illustrated graphically. Utilizing the homotopy perturbation technique, we can effectively examine the stability of the primary physical variations with the effect of some values for eigenvalues approaches.Graphical abstract

Suppressing Exciton–Vibration Coupling and Reducing Nonradiative Energy Loss in Conjugated Polymers Through Fluorine Substitution in Side Chains

Fluorine (F) substitution in polymers modulates both molecular energy levels and film morphology; however, its impact on exciton–vibrational coupling and molecular reorganization energy is often neglected. Herein, we systematically investigated F‐modified polymers (PBTA‐PSF, PBDB‐PSF) and their nonfluorinated counterparts (PBTA‐PS, PBDB‐PS) through simulations and experiments. We found that F atoms effectively lower the vibrational frequency of the molecular skeleton and suppress exciton–vibration coupling, thereby reducing the nonradiative decay rate. Moreover, introducing F atoms significantly decreases the reorganization energy for the S0 → S1 and S0 → cation transitions while increasing the reorganization energy for the S1 → S0 and cation → S0 transitions. These changes facilitate exciton dissociation and reduce the energy loss caused by dissociation and nonradiative recombination of excitons. Additionally, introducing F atoms into polymers enhances the π–π stacking strength and the crystal coherence length in both neat and blended films, ultimately resulting in improvements in the power conversion efficiency of PBTA‐PSF:L8‐BO and PBDB‐PSF:L8‐BO are 16.51% and 17.59%, respectively. This study provides valuable insights for designing organic semiconductor materials to minimize energy loss and achieve a higher power conversion efficiency.

Insight into Magnesium Doping on Morphology, Optical, and Electrical Properties of Cu2O Layer Synthesized by Electrodeposition Method

Cu2O stands out as a promising semiconductor material for solar energy conversion, primarily due to its exceptional light-absorbing qualities and its widespread availability. However, its efficiency is somewhat hindered by its relatively low carrier mobility and a limited absorption band for carriers. The introduction of magnesium (Mg) doping into Cu2O has emerged as a potential means to enhance its morphology, optical characteristics, and electrical properties, making it an intriguing avenue for exploration. To fabricate the Mg-doped Cu2O layers, an electrodeposition process was employed on an Indium Tin Oxide (ITO) substrate. The resulting films were then subjected to characterization using Field Emission Scanning Electron Microscopy (FESEM), Ultraviolet-Visible Spectroscopy (UV-Vis), and HALL Effect Measurement, focusing on their morphology, optical properties, and electrical behaviors. Notably, the concentration of magnesium played a significant role in shaping the properties of the Cu2O layer. The fabrication process extended up to a dopant concentration of 0.3 M for both undoped Cu2O and Mg-doped Cu2O layers, leading to morphological alterations. Specifically, the grain size increased with varying dopant concentrations, but it became smaller and more compact after doping with 0.3 M Mg. The average absorbance of visible light for both undoped and Mg-doped Cu2O layers fell within the range of 1~2 au. Intriguingly, a doping level of 0.3 M Mg led to the simultaneous achievement of high carrier mobility (29.98 cm2/Vs), low bulk carrier concentration (2.3.928 x 1021 cm-3), and high resistivity (5.3 x 10-5 Ω cm) in the Cu2O material. Additionally, Cu2O/ITO thin films exhibiting rectifying characteristics were successfully fabricated, confirming the semiconductor nature of the deposited p-type Cu2O layer. The primary objective of this study was to synthesize Cu2O layers doped with varying concentrations of Mg and thoroughly characterize their morphology, optical attributes, and electrical behaviors through the electrodeposition method. The study findings and implications were extensively discussed.

Design of logic circuits on 5 nm MOS

Abstract In this research, MOSFET, CMOSFET of gate length 5 nm has been presented. The simulation at gate length of 5 nm has been conducted using three different semiconductor materials which are SiGe, InGaAs and GaN. The comparison among their performance at MOSFET level has been showcased which reveals the better performance of InGaAs among the three different semiconductor candidates which is functioning at threshold voltage of 0.3804 V, drive current of 4.431 × 10−06 A μm−1 and low leakage current of 7.696 × 10−11 A μm−1 respectively. The comparison with the existing MOSFETs have been carried out and validated with ITRS 2013 and IRDS 2020 respectively. In order to design 2 input AND, OR, XOR, XNOR, NAND, NOR and NOT gate circuits, the CMOSFET at 5 nm gate length has been utilised and their performance in terms of Average power, Propagation delay, Power delay product and noise margin analysis are furnished in this paper. A comparison among the proposed work with the existing reveals the lower power consumption, delay and the power delay product of the proposed work.

Research on the material removal mechanism of vibration-assisted nano-scratch on single-crystal GaN by molecular dynamics.

Single-crystal gallium nitride (GaN) is a semiconductor material known for its hardness and brittleness. This research aims to reveal the differences in the micro-mechanisms of material removal during traditional grinding and ultrasonic vibration-assisted grinding and to provide guidance for the high-efficiency, high-quality planarization processing of single-crystal GaN. To achieve this purpose, molecular dynamics (MD) simulation methods were used to establish a model (30nm × 40nm × 15nm) of single-crystal GaN being scratched by a single abrasive grain with and without ultrasonic vibration assistance. The differences in the surface morphology and subsurface damage formation mechanisms of single-crystal GaN under conditions with and without ultrasonic assistance were compared. The results indicate that, compared to traditional grinding, the periodic ultrasonic vibrations reduce the normal force and result in a more uniform distribution of stress and temperature, thereby mitigating local stress concentration and thermal accumulation effects. Ultrasonic vibration alters the motion of the abrasive grain, expanding the material removal range from 7.384 to 10.315nm, decreasing the number of residual atoms in the machining area, and lowering the chip pileup height at the leading edge of the abrasive grain from 2.063 to 1.528nm. Additionally, the micro-shear deformation induced by ultrasonic vibrations helps to suppress brittle fracturing caused by excessive local stress, thus reducing the thickness of the damaged subsurface. At a scratch depth of 2nm, the total length of dislocation lines in the ultrasonic-assisted scratch is reduced from 185.256 to 33.315 nm compared to traditional scratching. These findings offer new insights into the microscopic mechanisms of material removal in high-efficiency, high-quality grinding processes of single-crystal GaN. This study adopts LAMMPS software for MD simulations to investigate the physical behavior of GaN during the grinding process. The simulation results are then visualized and analyzed using OVITO software to elucidate microstructural changes in the material. During the simulation, the temperature of the Newtonian layer is calculated based on the statistical analysis of atomic velocities under the NVE ensemble. The grinding force applied to the GaN workpiece is determined by differentiating the atomic potential energy. Von Mises stress analysis is adopted to ascertain the stress distribution during the scratching process. Finally, the changes in the crystal structure during scratching are identified and classified using analysis of identified defect structures.

Ethynylene‐Bridged Pentacene Trimer and Tetramer Prepared Through Unexpected Oligomerization and Their Subsequent Thermal Conversions

AbstractEthynylene‐bridged acenes, which are π‐conjugated triple bond‐containing systems, have attracted increasing interest as promising organic semiconductor materials due to their delocalized π‐electrons. In this study, ethynylene‐bridged pentacene precursor oligomers were not only synthesized through multiple‐organic reactions but also were unexpectedly obtained in one‐pot by using a conventional reaction with lithium silylacetylide and quinone. In the case of one‐pot synthesis, the formation of oligomers, including pentamer, was evidently confirmed by matrix‐assisted‐laser‐desorption/ionization time‐of‐flight mass spectrometry. Single crystal X‐ray analysis visualized the ethynylene‐bridged structure of the dimer which was one of the major products in the one‐pot reaction. It was found that the reaction time for the lithiation was the key factor in controlling oligomer formation. Finally, the thermal conversion from pentacene precursors to the corresponding pentacene oligomers was achieved via retro‐Diels–Alder reaction. These results would open an access to synthesize a wide range of π‐conjugated systems.

Enhanced Degradation of Oxytetracycline Antibiotic Under Visible Light over Bi2WO6 Coupled with Carbon Quantum Dots Derived from Waste Biomass

Improving the photogenerated carrier separation efficiency of individual semiconductor materials has always been a key challenge in photocatalysis. In this study, we synthesized a novel photocatalytic material, N-CQDs/UBWO, in situ by combining nitrogen-doped carbon quantum dots (N-CQDs) derived from discarded corn stover with ultrathin Bi2WO6 nanosheets (UBWO). Detailed characterization indicates that the random distribution of N-CQDs on the UBWO surface increases the specific surface area of UBWO, which is beneficial for the adsorption and degradation of oxytetracycline (OTC). More importantly, N-CQDs act as electron acceptors, promoting the effective separation of photogenerated charges, prolonging the lifetime of charge carriers in UBWO, and thereby enhancing the degradation efficiency of OTC. As a result, the optimized 3wt%N-CQDs/UBWO could degrade 85% of OTC within 40 min under visible light, with a removal rate four times that of pure Bi2WO6. The performance of photocatalytic degradation over OTC by 3wt%N-CQDs/UBWO exceeds that of most reported Bi2WO6-based photocatalysts. The EPR analysis confirmed that ∙O2− and ∙OH are the main active species in the photocatalytic degradation of OTC on 3wt%N-CQDs/UBWO. This study provides insight into designing green, low-cost, and efficient photocatalysts using CQDs derived from waste biomass and the degradation of emerging pollutants like antibiotics.

Advances in Infrared Detectors for In-Memory Sensing and Computing

In-memory sensing and computing devices integrate the functionalities of sensors, memory, and processors, offering advantages such as low power consumption, high bandwidth, and zero latency, making them particularly suitable for simulating synaptic behavior in biological neural networks. As the pace of digital transformation accelerates, the demand for efficient information processing technologies is increasing, and in-memory sensing and computing devices show great potential in AI, machine learning, and edge computing. In recent years, with the continuous advancement of infrared detector technology, infrared in-memory sensing and computing devices have also seen new opportunities for development. This article reviews the latest research progress in infrared in-memory sensing and computing devices. It first introduces the working principles and performance metrics of in-memory sensing and computing devices, then discusses in detail transistors and memristor-type devices with infrared band response, and finally looks forward to the development prospects of the field. Through innovation in new semiconductor materials and structures, the development trajectory of infrared in-memory sensing and computing devices has been significantly expanded, providing new impetus for the development of a new generation of information technology.

Self-Powered p-NiO/n-ZnO Heterojunction Ultraviolet Photodetector Based on Honeycomb Nano-Mesh Structure

Ultraviolet (UV) photodetectors (PDs) are characterized by wide wavelength selectivity and strong anti-interference capability. The focus of research is not only limited to the adjustment of the structure composition, but it also delves deeper into its working mechanism and performance optimization. In this study, a heterojunction self-powered photodetector with a unique honeycomb structure was successfully constructed by combining the advantages of two semiconductor materials, zinc oxide (ZnO) and nickel oxide (NiO), using magnetron sputtering and hydrothermal synthesis. The detector has high responsivity, high detectivity and favorable spectral selectivity under UV irradiation. The nearly 10-fold increase in responsivity and detectivity of the detector with the introduction of the honeycomb structure under zero-bias conditions is attributed to the macroporous structure of the ZnO honeycomb nano-mesh, which increases the surface active sites and facilitates the enhancement of light trapping. This study provides significant value to the field of UV detection by improving detector performance through structural optimization.

Studying the effects of temperature on InGaP/InGaAs/Ge triple junction solar cells using PyAMS Software

Multi-junction solar cells, particularly those utilizing III–V semiconductor materials, offer high conversion efficiency by employing multiple P-N junctions with different band gap energies to capture specific wavelengths of sunlight. Among these, the triple-junction photovoltaic cell, comprising Indium Gallium Phosphide (InGaP), Indium Gallium Arsenide (InGaAs), and Germanium (Ge) subcells, stands out for its efficiency. However, temperature variations significantly impact the performance of these subcells, necessitating a comprehensive understanding of their thermal behavior. In this study, we employ PyAMS (Python for Analog and Mixed Signals) software to model and simulate the behavior of InGaP/InGaAs/Ge sub cells under varying temperature conditions. Through comparison with experimental data, we validate our model and analyze key performance parameters, including short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF), and overall efficiency (η). Our findings reveal minimal changes in short circuit current density with temperature, while the open circuit voltage exhibits a substantial decrease beyond 60°C when exposed to concentrated illumination of 10 Suns, significantly impacting fill factor and efficiency. By elucidating the thermal behavior of three-junction solar cells, our study contributes valuable insights for designing and implementing cooling systems, thereby enhancing the performance and reliability of photovoltaic systems in practical applications.

High-Throughput Screening Approach for Catalytic Applications through Regulation of Adsorption Energies via Work Function.

Adsorption energy is critical in catalysis, energy storage, and sensing. Optimal adsorption energy on a catalytic substrate is essential as extreme adsorption energy can reduce the reaction efficiency. Building on our previous research on the influence of work function on adsorption energy (Phys. Chem. Chem. Phys. 2024, 26, 3525-3530), we examined a range of two-dimensional semiconductor materials, including black phosphorene, boron nitride, and MoS2, as supporting substrates for the construction of silicene-semiconductor heterojunctions. Furthermore, we analyzed how work function changes impact adsorption energy during O2 adsorption and developed a theoretical model to explain this relationship. The model was validated by demonstrating the regulation of the catalytic reaction barrier in the oxygen reduction reaction and was applied to N2 adsorption via high-throughput screening. Our findings demonstrate that the work function modulates the adsorption energy in van der Waals heterojunctions, enhancing catalytic efficiency. This approach aligns with the Sabatier principle and offers a pathway for optimizing catalysts.

High-Performance Photocatalytic Degradation of Aromatic Compounds Using Co-MOF-74/ZnIn2S4/CNF Aerogels with Enhanced Charge Separation and Photothermal Synergy

Although photocatalytic degradation using semiconductor materials has been widely studied, there are still challenges such as slow reaction kinetics and complex synthesis process. To overcome these problems, Co-MOF-74@ZnIn2S4@CNF composite aerogel was developed in this study, which significantly improved the photocatalytic efficiency. This novel structure integrates three key functions: 1) the one-dimensional Co-MOF-74-NTs nanotube enhances carrier mobility based on its high aspect ratio; 2) the Co-MOF-74@ZnIn2S4 heterojunction facilitates charge separation for efficient generation of reactive oxygen species; 3) the porous cellulose aerogel promotes the adsorption of substrates and improves the photothermal effect due to its intrinsic thermal conductivity and insulation, and will facilitate effective charge separation. This combined functionality resulted in highly efficient degradation of paraxylene, with 91.6% of degradation efficiency and 68.79% of mineralization rate within 3h under simulated sunlight. Several experiments demonstrated that the Co-MOF-74@ZnIn2S4@CNF aerogel possessed strong stability and effective catalytic properties for a variety of aromatic compounds. This study introduces a new photocatalytic system combining heterogeneous structure and photothermal effect to enhance charge transfer, providing an efficient solution for photothermal-assisted Aromatic Compounds degradation.

Advancing photocatalytic performance for enhanced visible-light-driven H2 evolution and Cr (VI) reduction of g-C3N4 through defect engineering via electron beam irradiation

Defect engineering has emerged as a strategic approach for optimizing photocatalyst band structures to improve performance. High-energy electron-beam irradiation is a promising method for inducing vacancies and defects in semiconductor materials, providing a rapid and efficient solution. In this study, we used simple electron-beam irradiation to modify g-C3N4 photocatalysts, resulting in the rapid formation of nitrogen vacancies within the material. Characterization techniques such as 13C-nuclear magnetic resonance, X-ray photoelectron spectroscopy, and electron paramagnetic resonance confirmed the formation of nitrogen vacancies, resulting in an asymmetric charge distribution within the g-C3N4 crystal structure. The optimized photocatalyst, gCN-300, exhibited remarkable performance, producing hydrogen at a rate of 750.57 ± 9.9 μmol g-1h−1 and reducing Cr (VI) by 83.5 % within 2 h with long-term photostability. The improved performance was attributed to increased visible-light absorption, a greater number of surface-active sites, improved electronic conductivity, and efficient charge transfer. These factors were supported by UV–visible diffuse reflectance spectroscopy, photoluminescence, and photoelectrochemical analysis. Thus, this study demonstrates the effectiveness of electron-beam irradiation in the large-scale production of defect-engineered photocatalysts with high performance.

The enhanced lifetime of printed GaS-based photodetectors with polymer encapsulation

Exhibiting excellent absorption in the UV–visible wavelength range makes layered gallium sulfide (GaS) semiconductor material a promising candidate for use in electronics and optoelectronics applications. Recently, a fully printed GaS-based photodetector has been proposed and fabricated, rendering a low-cost fabrication process in flexible electronics. However, the degradation of the semiconductor layer due to environmental conditions causes reliability issues and shortens their lifetime. Thus, in this study, an attempt has been made to encapsulate printed GaS-based photodetector using different polymers to hinder the degradation. It is demonstrated that encapsulating the printed GaS-based photodetector by utilizing the polymer-capping method with styrene co-polymers, Polystyrene-block-polyisoprene-block-polystyrene, highly hydrogenated poly(styrene)-block-poly(butadiene), partially hydrogenated poly(styrene)-block-poly(butadiene), increases the performance of the photodetector. The efficiency of the GaS-based photodetector printed on flexible polyethylene terephthalate (PET) substrate has reached up to 123 % in responsivity in 6 weeks after the polymer coating. Also, the device figure of merit, the detectivity value of the printed photodetector, has increased more than three times after the polymer coating compared to its as-deposited state. Meanwhile, it is observed that the fall and rise times of the printed GaS photodetector have remained constant. Based on these results attained in this study, it can be claimed that the polymer coating provides high performance and long stability in the printed GaS-based photodetectors on flexible substrates, which will pave the way for the further implementations of III-VI group layered semiconductor materials in electronics and optoelectronics applications.

Fabrication of C and N co-doped CdS semiconductor photocatalysts derived from a novel Cd-MOF for enhancing photocatalytic performance

The narrow bandgap value and long lifetime of photo generated charges make CdS exhibit higher photocatalytic activity compared to other semiconductor catalysts. Given the excellent optoelectronic properties of CdS, a novel 2D cadmium-organic framework (Cd-MOF) was obtained by solvothermal method, which was served as a precursor template in this paper. C and N co-doped CdS-T (T = 600/800/1000) semiconductor materials were successfully prepared by chemical deposition method under different high temperatures. The as-prepared materials had been characterized in detail. Furthermore, the Cd-MOF and CdS-T were used to conduct the photocatalytic activity of organic dyes. Among them, CdS-800 showed excellent photocatalytic degradation effects on five organic dyes, especially on RB with the photocatalytic degradation efficiency of 98.87 %, which was significantly improved 6.5 times compared to Cd-MOF (58.23 %). Free radical capture experiments have shown that •O2− play a dominant role in the photocatalytic process. In addition, UV–vis diffuse reflection, photoluminescence (PL), photoelectrochemical (PEC) testing and density functional theory (DFT) calculations had shown that CdS-800 could effectively delay the recombination of photo generated charges, improve the rapid migration and separation of photo generated carriers, and enhance photocatalytic activity. This work provides new ideas for the preparation of efficient and recyclable CdS semiconductor photocatalytic materials.

Dielectric Characteristics of Iridium Substituted Co0.05-xTi0.95O2 Dilute Magnetic Semiconductors for Electrical Device Applications

In the current study, a cost effective solid-state method have been used to prepare iridium (Ir) substituted and cobalt doped titanium dioxide (TiO2) dilute magnetic semiconductors (DMS) materials {i.e.; IrxCo0.05-xTi0.95O2; 0.00 ≤ x ≤ 0.05 DMS}. The impact of Ir substitution on structural, optical and dielectric properties for the prepared IrxCo0.05-xTi0.95O2; 0.00 ≤ x ≤ 0.05 DMS samples have been investigated using X-ray diffractometer, ultraviolet-visible spectroscopy and LCR (inductor, capacitor and resistor) meter, respectively. The structural analysis confirms the tetragonal rutile phase formation with space group p42/mnm-136, while the values of band gap energy increase with increasing Ir concentrations in prepared DMS materials and band gap value approaches the band gap energy of void band gap materials for large applications. The dielectric constant and tangent loss have been studied as a mapping of frequency (20Hz - 20MHz) at room temperature. Both the dielectric constant and tangent loss linearly decrease with increase in applied frequency and become stable at high frequency values, therefore, these DMS materials could be beneficial for storage and electrical device applications.

Photo-thermo-acoustic waves interaction for nanostructured rotational semiconductor material subjected to laser pulse

Photo-thermo-acoustic waves interaction for nanostructured rotational semiconductor material subjected to laser pulse

A novel hydrodynamic semiconductor model under Hall current effect and laser pulsed excitation

This paper presents a novel investigation into the effects of a strong external magnetic field on a hydro-poroelastic semiconductor model within the framework of photo-thermoelasticity theory in two dimensions. This study focuses on generating a Hall current and its impact on the coupled behavior of thermal, mechanical, and electronic fields in a semiconductor medium saturated with fluid. Using the normal mode analysis, we derive and analyze the wave propagation characteristics of key physical fields, including the non-dimensional temperature, displacement, mechanical stresses, carrier density, and excess pore water pressure, in response to the imposed magnetic field. Boundary conditions relevant to real-world applications are incorporated to assess the interactions between these fields. The results provide insight into the dynamic coupling of electromagnetic, thermal, and mechanical phenomena in porous semiconductor materials and offer potential applications in the design of magneto-sensitive semiconductor devices as well as in geophysical and biomedical engineering fields where such multi-field interactions are critical. The results obtained are plotted with some comparisons.