Self-oscillating Mixer Research Articles

Quadrature Harmonic Self-Oscillating Mixer: Toward Large Array Multifunction Receiver Systems

Quadrature Harmonic Self-Oscillating Mixer: Toward Large Array Multifunction Receiver Systems

Hybrid self-oscillating mixer loading dielectric resonator antenna fed by half-mode substrate integrated waveguide for K-band radar

In this paper, a new self-oscillating mixer (SOM) including a dielectric resonator (DR) antenna fed by a half-mode substrate integrated waveguide (HMSIW) has been proposed using hybrid integrated circuit technique on an FR4 epoxy substrate. The HMSIW resonator with high quality factor and the DR radiator with higher order HEM13δ mode excitation are responsible for the excellent phase noise performance of the oscillator and the high directivity of the antenna, respectively. The phase noise, estimated LO power, and conversion gain were obtained as −102.5 dBc/Hz at 1 MHz offset, 8.74 dBm at an oscillation frequency of 24.15 GHz, and 8.5 dB, respectively. The figure-of-merit for the oscillator was obtained −172.8 dBc/Hz.

High rejection self-oscillating up-conversion mixer for fifth-generation communications

<span lang="EN-US">This paper presents the design of a pseudomorphic high electron mobility transistor (pHEMT) self-oscillating mixer (SOM) for millimeter wave wireless communication systems. The 180° out-of-phase technique is chosen to both improve the desired lower sideband (LSB) signal and to achieve a satisfactory rejection of the unwanted signals (LO, USB and IF). This SOM is designed on the PH15 process of UMS foundry which is based on 0.15 µm GaAs pHEMT. The signal is up-converted from 2 GHz-IF frequency to 26 GHz-LSB frequency, using an autogenerated 28 GHz-LO signal. Simulations were performed using the advanced design system (ADS) workflow. They show 6.4 dB conversion gain and a signal rejection rate of 29.7 dB for the unwanted USB signal. the chip size is 3.6 mm<sup>2</sup>.</span>

Design of Monolithic RF CMOS Sub-mW Self-Oscillating-Mixers

In this paper, different topologies of RF self-oscillating mixers (SOM), stacking the voltage controlled oscillator (VCO) and the mixer on top of each other, are assessed. Their design considerations to address sub-mW operation suitable to ultra-low power applications are presented. Two configurations of SOM circuits are implemented in 130nm CMOS technology. The obtained results are presented and performances in terms of gain, noise, linearity, area, power consumption and stability over process and mismatch are compared and discussed.

High Conversion Gain Self-Oscillating Mixer for 5G mm-wave Applications

We develop in this paper, a high conversion gain self-oscillating mixer (SOM) for 5G mm-wave applications using commercial 0.15µm GaAs PHEMT from UMS foundry. The up-conversion SOM transpose the IF signal from 2 GHz to 26 GHz LSB (lower sideband) signal using a 28GHz LO signal. The simulation results show that the SOM has a maximum conversion gain of 19dB, according to our knowledge, this structure presents the highest gain compared to SOMs published in the literature. While the 1dB compression point is obtained for an IF power of -20.6 dBm. The SOM circuit consumes 129mW and it occupies an area of 0.741 mm2.

Wireless Injection Locking of Zero-IF Self-Oscillating Mixers

The recently introduced Zero-IF self-oscillating mixers (SOMs) enable a direct frequency conversion, of interest for the implementation of compact and low consumption radio frequency identification (RFID) tags, among other applications. In previous works, the Zero-IF SOM is placed in only one of the terminals of the wireless link, the other one being based on a conventional scheme. In this article, a system made up of two wirelessly locked Zero-IF SOMs, operating as a frequency upconverter and downconverter, will be analyzed to evaluate its potential for low-cost short-range communications. A complete formulation describing the system under antenna and propagation effects will be presented, which, as a particular case, is able to predict the behavior of the previously proposed Zero-IF SOM, locked by an independent signal. The formulation based on oscillator models extracted from harmonic balance allows deriving design criteria for an optimum and robust performance and can predict the maximum communication range, as well as the stability properties and phase-noise behavior. The operation under modulated conditions is analyzed with a novel envelope-transient formulation, accounting for the time differentiation caused by the propagation effects. The methods have been applied to a system of two Zero-IF SOMs operating at 900 MHz.

Double Functionality Concurrent Dual-Band Self-Oscillating Mixer

A concurrent dual-band self-oscillating mixer (SOM), based on a ring-shaped stepped-impedance resonator, is proposed and analyzed in detail. Taking advantage of the ring even and odd resonances, the circuit can operate in concurrent dual quasi-periodic mode and injection-locked mode. In the second case, it behaves as a dual-band zero-intermediate-frequency (IF) mixer. Initially, an analytical study of the SOM behavior in the two modes is presented. Then a variety of accurate numerical methods are used for an in-depth investigation of the main aspects of its performance, including stability, conversion gain, linearity, and phase noise. The recently proposed contour-intersection technique and the outer-tier perturbation analysis are suitably adapted to the SOM case. A method is also presented to distinguish the parameter intervals leading to heterodyne and to zero-IF operation at both the lower and upper frequency bands. In the zero-IF SOM, the possible instantaneous unlocking in the presence of modulated input signals is investigated and avoided. The methods have been applied to a dual mixer at the frequencies 2.4 and 4.1 GHz.

Millimeter-Wave CMOS Sourceless Receiver Architecture for 5G-Served Ultra-Low-Power Sensing and Communication Systems

In this paper, an extremely low-power and low-complexity CMOS sourceless millimeter-wave (mmW) receiver for the next-generation wireless communication and sensing systems including fifth-generation (5G) is proposed and demonstrated. It makes the use of injection-locked self-oscillating mixers (SOMs) in order to enable a direct conversion to baseband without resorting to any external local oscillator (LO) nor an IF processing block, therefore, greatly reducing power consumption, as well as the receiver’s complexity. This architecture is created through multi-input and multi-output (MIMO) arrays in connection with slicing frequency spectrum or frequency band of interest. In this way, the proposed receiver supports a high data transmission throughput based on the frequency-diversified MIMO, which presents a unique feature in the architectural implementation of a low-power and high bit-rate communication and sensing systems. Transmission and demodulation of a digital modulated signal M-quadratic-amplitude modulation (M-QAM) at 40 GHz, is successfully demonstrated with simulated and measured results.

P-코어 VCO를 사용한 10.525GHz 자체발진 혼합기의 설계

도플러 레이더에 응용할 목적으로 전압제어 발진기와 주파수 혼합기가 합쳐진 10.525GHz 자체발진 혼합기 반도체 IC 칩을 실리콘 CMOS 기술을 이용하여 설계하였다. 자체발진 혼합기에 포함된 p-코어 형태의 VCO는 송신신호에 포함된 잡음을 최소화한다. 이 잡음 최소화는 센싱 가능 거리를 늘여서 움직임 감지센서의 도달거리와 도달감도에 유리한 방향으로 작용한다. 위상잡음에 대한 시뮬레이션 결과 P-코어로 설계된 VCO는 1MHz 오프셋에서 –106.008dBc/Hz, 25MHz 오프셋에서 –140.735dBc/Hz의 잡음특성을 가짐으로써 N-코어 및 NP-코어로 설계된 VCO에 비하여 우수한 잡음 특성을 보였다. 본 연구에 의한 p-코어로 설계된 VCO를 이용하여 자체발진 혼합기를 구현한다면 도달거리와 도달감도가 우수한 움직임 감지센서를 제작할 수 있을 것이다.

Investigation on multi-frequency oscillations in InGaAs planar Gunn diode with multiple anode-cathode spacings

Abstract Current oscillations in an AlGaAs/InGaAs/AlGaAs-based two-dimensional electron gas (2DEG)-based hetero-structure have been investigated by means of semiconductor device simulation software SILVACO, with an interest on the charge domain formation at large biases. Single-frequency oscillations are generated in planar Gunn diodes with uniform anode and cathode contacts. The oscillation frequency reduces as the applied bias voltage increases. We show that it is possible to create multiple, independent charge domains in a novel Gunn diode structure with designed multiple anode-cathode spacings. This enables simultaneous generation of multiple frequency oscillations in a single planar device, in contrast to traditional vertical Gunn diodes where only single-frequency oscillations can be achieved. More interestingly, frequency mixing in multiple-channel configured Gunn diodes appeared. This proof-of-concept opens up the possibility for realizing compact self-oscillating mixer at millimeter-wave applications.

High-Data-Rate Single-Chip Battery-Free Active Millimeter-Wave Identification Tag in 65-nm CMOS Technology

In this paper, a class of high-data-rate battery-free yet active miniature radio-frequency identification tag without any external components (except antenna) operating at millimeter (mm)-wave frequencies is proposed and demonstrated. This fully embedded tag consists of a recently proposed CMOS-based zero-intermediate-frequency self-oscillating mixer, a high power conversion efficiency mm-wave-to-dc rectifier, and an ultralow-power voltage regulator on a single chip, integrated with ceramic-based antennas. Interconnection between the CMOS die and the antenna is realized using a wire-bonding technique, which is compensated and optimized to match the antenna input impedance and also to minimize the wire-bond associated losses at mm frequencies. The $10 \times 10$ mm2 tag wirelessly harvests its energy from an incoming signal at 24 GHz, receives, and recovers the data sent by reader on an amplitude modulation (AM)-modulated 40-GHz carrier, and transmits its data back to the reader on a 40-GHz carrier, using AM modulation as well. The tag exhibits a bit rate of about 500 kb/s during the reader-to-tag communication and 10 Mb/s during the tag-to-reader communication, solely relying on the rectified energy for powering its operation. To the best of our knowledge, such an mm-wave identification tag at mm-wave frequencies has never been reported in the literature.

Low-Power Injection-Locked Zero-IF Self-Oscillating Mixer for High Gbit/s Data-Rate Battery-Free Active Tag at Millimeter-Wave Frequencies in 65-nm CMOS

In this paper, a low-power zero-IF self-oscillating mixer (SOM) for a new generation of high data-rate battery-free, yet active $\mu{\hbox{RFID}}$ tag (a fully integrated RF identification tag on a single CMOS die with no external components, nor packaging) operating at millimeter-wave frequencies is proposed and demonstrated. It exploits, on one hand, the intrinsic mixing properties of an LC cross-coupled voltage-controlled oscillator, and on the other hand, the injection-locking properties in oscillators. By injection locking the SOM’s natural oscillation frequency to the reader’s carrier frequency (a frequency that bears information of the tag: reader-to-tag communication), it enables a direct-conversion to the baseband with no external local oscillator (LO) source (self-mixing), nor RF frequency conversion into IF frequency, therefore significantly reducing its power consumption. Up-link communication (tag-to-reader communication) is performed by up-converting the tag’s data using the same SOM. Furthermore, the in-phase injected energy stabilizes the self-generated LO and enhances the SOM phase noise, resulting into a low-phase noise baseband signal. Using a standard 65-nm CMOS process, a 40-GHz zero-IF SOM was designed, fabricated, and tested. Experimental results exhibit a conversion loss of about 30 dB under $-{\hbox{38-dBm}}$ injected RF power with a power consumption of only 280 $\mu {\hbox{W}}$ during reader-to-tag communication, and 580 $\mu {\hbox{W}}$ during tag-to-reader communication.

Self-oscillating mixer using six port power divider

A self-oscillating mixer (SOM) that uses a six port microstrip power divider is presented in this article. The oscillation and mixing functions are executed using a pair of identical GaAs field effect transistors. The power division and combination of the RF and local oscillator (LO) signals involved in the operation are implemented using the six port network. The RF input port of the proposed SOM is totally isolated from the operation of the LO which is a desirable feature in many applications. The proposed structure can work as a stand-alone oscillator with a frequency of 4.71 GHz and a power level of 16.1 dBm. When fed with a RF signal, the proposed structure becomes a fully functional SOM exhibiting a conversion gain of 5.2 dBm. The simulation and measurement results of the proposed SOM are presented to validate the design concept. © 2014 Wiley Periodicals, Inc. Int J RF and Microwave CAE 25:269–276, 2015.

X-Band Self Oscillating Mixer With Resonator-Antenna Filter

A simple self-oscillating mixer (SOM) with an excellent figure-of-merit (FOM) using a parallel feedback circuit composed of a planar resonator-antenna filter is proposed. By coupling a planar patch antenna and a Slotted Square Patch Resonator (SSPR), the feedback circuit shows two-pole bandpass filter (BPF) characteristic with a high group delay peak value. The SOM is designed near the group delay peak frequency, so that the phase noise and hence the FOM of the oscillator can be improved. As a negative resistance device, NE3512S02 is biased near the pinch off region for enhancement of power efficiency with proper mixing and oscillating functions. The measured phase noise is -102.38 dBc/Hz at 100 kHz offset with the FOM of -195.40 dBc/Hz. The output power, power efficiency and the conversion gain of the SOM are measured as 4.2 dBm, 46.7% and 4.45 dB, respectively.

Self-Oscillating Mixers: A Natural Fit for Active Antennas

The prospect of reducing the parts count, power consumption, and cost of a system by merging the mixing and signal generation functions into one circuit block explains the lasting appeal of SOMs. The widespread popularity of SOMs in the first half of the 20th century was because the economics of the electronics industry at the time made them competitive in the marketplace. The arrival of solid-state devices changed the dynamic, and SOMs became more of a curiosity for a good while until the turn of the 21st century. SOMs have a promising future again because they are a natural fit for active antennas, whose most intriguing application these days is the IoT. Technologies related to radar and telecommunications also stand to benefit from the recent advances in CMCS SOMs because their performance, when evaluated at the system level, is now comparable to using individual mixer and oscillator blocks.

A Wide Tuning Range CMOS Oscillator Mixer Using A Push-Push Technique for V-Band Applications

This work proposes a wide tuning oscillator mixer that operates from 56 to 64 GHz and is based on 90 nm CMOS technology. The circuit of a voltage control oscillator (VCO) comprises a mixer core and a coupled line marchand balun. The balanced mixer is symmetric, inherently broadband, and dependent on an LO balun that is combined with the parasitic capacitances from the mixer. The VCO is used in a 60 GHz push–pull circuit to generate the second harmonic, and a 30 GHz dielectric resonator is utilized to stabilize the fundamental oscillation frequency. The LC-tank oscillator also functions as a single-balanced LO load for the mixer core. A theoretical expression for the conversion gain of the self-oscillating mixer is given, taking into account the time-varying nature of the LO load impedance. Measurements show that the mixer has a conversion gain of 3.4 dB. Its output P1 dB is −12.4 dBm. The chip consumes 17.9 mW of dc power and it occupies an area of 0.64 mm2 without pads. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1934–1937, 2013

Ultralow Power Injection-Locked GFSK Receiver for Short-Range Wireless Systems

This brief presents a novel CMOS Gaussian frequency-shift keying (GFSK) receiver with an ultralow power consumption, which is based on the injection-locking technique for short-range wireless systems. Additionally, through reducing the oscillation current amplitude of the injection-locked oscillator, the GFSK receiver sensitivity is significantly improved. While comprising a submilliwatt low-noise amplifier, a trifilar transformer splitter, and an injection-locked self-oscillating mixer, the proposed receiver is fabricated using a 90-nm CMOS 1P9M technology. Measurement results indicate a sensitivity of -81 dBm, with a power consumption of 1.8 mW, when a Bluetooth GFSK signal with a data rate of 1 Mb/s is received.

A Second Harmonic Self-Oscillating Mixer Incorporating Resonant Cell Structure

A downconverting second harmonic self-oscillating mixer (SOM) is developed for low-cost wireless communications applications. Incorporating resonant cell in the SOM, we can provide suitable oscillation for generating LO and terminations to all major unwanted mixing products, leading to high conversion gain design. The proposed SOM was measured with 8.5 dB downconversion gain at the RF frequency of 8.2 GHz RF, LO frequency of 4.0 GHz, and IF frequency of 0.2 GHz. The proposed design achieves higher conversion gain than that of the SOM without resonant cell.

A Low-Power Third-Harmonic Self-Oscillating Mixer Using Multi-Harmonic Load

A novel design of a third-harmonic self-oscillating mixer (SOM) based on a nonlinear optimization technique, namely multi-harmonic load, has been designed. Power consumption is reduced by terminating harmonic properly, and conversion gain is optimized in the form of harmonic termination networks at dc, RF, and LO frequency, and its harmonics. In this way, a novel SOM circuit at an RF frequency of 5.79 GHz has been designed and fabricated yielding an excellent conversion gain of +11.5 dB. Gate and drain voltage supplies are -1.18V and +1.5 V, respectively and dc power consumption is about 9 mW.

2차 고조파 주입을 사용한 고 선형성의 자체 발진 혼합기

In this paper, a highly linear self oscillating mixers(SOM) using second harmonic injections are presented. The H-slot defected ground structure(DGS) is designed as a balanced resonator for oscillation in the proposed SOM. Since the H-slot DGS resonator achieves a high Q factor, it is a suitable structure to provide low phase noise for the oscillator. The single balanced mixer is utilized in this work and it provides good LO-RF isolation since balanced LO signals are suppressed at the RF input port. In order to inject the second harmonic of the IF, we propose two different methods using feedback loops. In the first method, IF achieves a 3.08 dB conversion gain at 226 MHz with input power of -20 dBm at 5 GHz RF input signal. The IF achieves 2 dB conversion gain at 423 MHz with the input power of -20 dBm at 5.2 GHz RF input signal in the second method. The measured IMD3s are 61.8 dB and 65 dB for the each method. These SOMs present improved linearity compared to that without the second harmonic injection because IMD3s are improved by 18. dB and 21 dB for each method.