The edge of a micro-/nanoscale line pattern fabricated by lithography is not a straight line as in the design but has a roughness. This is called the line edge roughness (LER) and is important dimensional information related to the device performance, and reference standards containing known LER values are needed for fundamental research on lithography-related technology. We propose a novel framework for developing LER reference standards that contain the necessary characteristics. The proposed framework has three main features: (i) a self-affine fractal roughness model for the development of next-generation devices; (ii) a reliable evaluation method based on LER reference metrology using SI-traceable atomic force microscopy (AFM); and (iii) a versatile evaluation method using scanning electron microscopy-based LER metrology verified by the previous AFM-based LER reference metrology. In an experiment to verify the proposed framework, we fabricated an LER reference standard by using electron-beam lithography. The results show that the proposed framework can be used to develop LER reference standards for next-generation functional micro-/nanostructures.