Nanowire Segments Research Articles

The impact of segment dilution on the magnetic and hysteretic properties of ferrimagnetic (1/2-1) segmented Ising nanowire

This study explores the presence of diverse phase diagrams and hysteresis characteristics, as well as their dependencies on segment dilution, in an Ising-type core/shell segmented nanostructure. The magnetic and hysteretic behavior of the nanostructure was carefully investigated by employing the effective-field theory and its respective diluted parameters. The phase diagrams reveal characteristic phenomena that are influenced by the dilution parameters. Specifically, this study examined the variations in phase transitions and tricritical points by altering the dilution and physical parameters of the segments. The investigation also encompasses an examination of the hysteresis characteristics, including the hysteresis loop, coercivity, and remanence, in relation to the segment dilution dependence of the segmented nanowire. It was discovered that as the temperature rises, the hysteresis loop areas diminish. However, intriguingly, at specific dilution and crystal area values, the hysteresis loop areas exhibit an augmentation.

Geometrical properties of three-dimensional crossed nanowire networks

Three-dimensional interconnected nanowire networks have recently attracted notable attention for the fabrication of new devices for energy harvesting/storage, sensing, catalysis, magnetic and spintronic applications, and for the design of new hardware neuromorphic computing architectures. However, the complex branching of these nanowire networks makes it challenging to investigate these 3D nanostructured systems theoretically. Here, we present a theoretical description and simulations of the geometric properties of these 3D interconnected nanowire networks with selected characteristics. Our analysis reveals that the nanowire segment length between two crossing zones follows an exponential distribution. This suggests that shorter nanowire segments have a more pronounced influence on the nanowire network properties compared to their longer counterparts. Moreover, our observations reveal a homogeneous distribution in the smallest distance between the cores of two crossing nanowires. The results are highly reproducible and unaffected by changes in the nanowire network characteristics. The density of crossing zones and interconnected nanowire segments is found to vary as the square of the nanowire density multiplied by their diameter, further multiplied by a factor dependent on the packing factor. Finally, densities of interconnected segments up to 1013cm−2 can be achieved for 22-µm-thick nanowire networks with high packing factors. This has important implications for neuromorphic computing applications, suggesting that the realization of 1014 interconnections, which corresponds to the approximate number of synaptic connections in the human brain, is achievable with a nanowire network of about 10cm2. Published by the American Physical Society 2024

(Invited) Confined and Free-Standing Perovskite Nanowires for X-Ray Detection

Metal halide perovskites (MHPs) have shown excellent results in many applications, including X-ray scintillation detection. Nanowires could offer improved sensitivity by exploiting nanophotonic light guiding, and the MHP stability could be improved by growing nanowires physically protected in anodized aluminum oxide (AAO). We use a one-step solution low-temperature method to grow arrays of long single-crystalline CsPbBr3 nanowires in an AAO template. The diameters can be adjusted by the AAO template, ranging from 30 to 360 nm, and the length can be controlled up to 15 μm (Fig 1(a)) [1]. The nanowires show excellent stability, with no obvious lack in photoluminescence after months of storage in air. The X-ray scintillation shows no systematic degradation over 2 weeks of continuous X-ray exposure, but an unexpected positive correlation with room humidity. The excellent stability allows tomographic 3D X-ray imaging at better than 3 μm resolution [2].Surprisingly, we find that free-standing CsPbBr3 nanowires can be obtained by the same method (Fig 1(b)) [3]. The length of the vertically aligned nanowires is controlled from 1 to 20 μm with the precursor amount. The nanowires are single-crystalline and exhibit excellent photoluminescence and clear light guiding (Fig 1(c)). Lithography methods for MHPs have been limited because of their solubility in polar solvents. However, we show that o-xylene can be used in a perovskite-compatible electron beam lithography (EBL) process based on nonpolar solvents [4]. Combining these results, we demonstrate single nanowire devices with excellent photoresponse. Recently, we have developed a gas-phase halide exchange method based on HCl or Cl2 to convert the green-emitting CsPbBr3 to blue-emitting CsPb(BrxCl1-x)3. [5]. Using the aforementioned EBL process, we selectively convert segments of nanowires to CsPb(BrxCl1-x)3 and create axially heterostructured nanowires (Fig 1(d)).1 Z. Zhang, H. Dierks, N. Lamers et al., "Single-Crystalline Perovskite Nanowire Arrays for Stable X-ray Scintillators with Micrometer Spatial Resolution" ACS Applied Nano Materials 5 (1), 881 (2022) http://doi.org/10.1021/acsanm.1c035752 H. Dierks, Z. Zhang, N. Lamers, and J. Wallentin, "3D X-ray microscopy with a CsPbBr3 nanowire scintillator" Nano Res. 16 (1), 1084 (2023) https://doi.org/10.1007/s12274-022-4633-73 Z. Zhang, N. Lamers, C. Sun, C. Hetherington, I. G. Scheblykin, and J. Wallentin, "Free-Standing Metal Halide Perovskite Nanowire Arrays with Blue-Green Heterostructures" Nano Lett. 22 (7), 2941 (2022) http://doi.org/10.1021/acs.nanolett.2c001374 N. Lamers, Z. Zhang, and J. Wallentin, "Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices" ACS Applied Nano Materials 5 (3), 3177 (2022) http://doi.org/10.1021/acsanm.2c001885 N. Lamers, Z. Zhang, I. G. Scheblykin, and J. Wallentin, "Multisegment Heterostructured CsPb(Br1-xClx)3 Perovskite Nanowires using Gas-Phase Anion Exchange" In review (2023) Figure 1

Electrical characterization of an individual nanowire using flexible nanoprobes fabricated by atomic force microscopy-based manipulation

Nanowires have emerged as promising one-dimensional materials with which to construct various nanocircuits and nanosensors. However, measuring the electrical properties of individual nanowires directly remains challenging because of their small size, thereby hindering the comprehensive understanding of nanowire-based device performance. A crucial factor in achieving reliable electrical characterization is establishing well-determined contact conditions between the nanowire sample and the electrodes, which becomes particularly difficult for soft nanowires. Introduced here is a novel technique for measuring the conductivity of an individual nanowire with the aid of automated nanomanipulation using an atomic force microscope. In this method, two nanowire segments cut from the same silver nanowire are positioned onto a pair of gold electrodes, serving as flexible nanoprobes to establish controllable contact with the sample. By changing the contact points along the nanowire sample, conductivity measurements can be performed on different regions, thereby eliminating the influence of contact resistance by analyzing multiple current–voltage curves. Using this approach, the resistivity of a 100-nm-diameter silver nanowire is determined to be 3.49 × 10−8 Ω m.

Delocalized states in three-terminal superconductor-semiconductor nanowire devices

We fabricate three-terminal hybrid devices consisting of a semiconductor nanowire segment proximitized by a grounded superconductor and having tunnel probe contacts on both sides. By performing simultaneous tunneling measurements, we identify delocalized states, which can be observed from both ends, and states localized near one of the tunnel barriers. The delocalized states can be traced from zero magnetic field to fields beyond 0.5 T. Within the regime that supports delocalized states, we search for correlated low-energy features consistent with the presence of Majorana zero modes. While both sides of the device exhibit ubiquitous low-energy features at high fields, no correlation is inferred. Simulations using a one-dimensional effective model suggest that the delocalized states, which extend throughout the whole system, have large characteristic wave vectors, while the lower momentum states expected to give rise to Majorana physics are localized by disorder. To avoid such localization and realize Majorana zero modes, disorder needs to be reduced significantly. We propose a method for estimating the disorder strength based on analyzing the level spacing between delocalized states.

Lattice Thermal Conductivity of Silicon and Germanium Core/Shell and Segmented Nanowires

Lattice Thermal Conductivity of Silicon and Germanium Core/Shell and Segmented Nanowires

Self-Organized Growth of Nanowires on a Graphene Film

The self-organized growth of nanowires (NWs) on a graphene film is realized through the van der Waals epitaxy mechanism by metalorganic chemical vapor deposition. It is a fundamental phenomenon which is qualitatively different from the known growth mechanisms, such as self- and metal-catalyzed NW growth. We present a theoretical model that explains the self-organized nucleation of InGaAs NWs on graphene, starting from the formation of InAs NW segments. Then, newly formed InAs NWs act just like seeds to initiate the subsequent growth of InAs/InxGa1–xAs core–shell NWs with spontaneous phase segregation. The model shows that due to the introduction of the graphene film, the nucleation speed of InAs and InGaAs nanoislands in the horizontal direction far exceeds that of the vertical direction. It also elucidates why the radius of the InAs core is two times larger than the InGaAs shell thickness by considering the adatom collection ability of the InAs core and InGaAs shell, respectively, during the transformative process. Thus, the theoretical analysis of the self-organized NW growth on a graphene film is of vital importance for further optimizing the fabrication procedures of two-dimensional material-based NWs.

Quantum confinement in optically active ultrathin (Cd,Mn)Te/(Cd,Mg)Te core/shell nanowires

The fabrication of ultrathin (Cd,Mn)Te nanowires with diameters reaching values below 10 nm is reported. The thinning procedure relies on a thermally induced reverse reaction process applied to (Cd,Mn)Te nanowires grown using the vapor-liquid-solid method. The impact of quantum confinement is manifested by a distinct blueshift of the excitonic emission from individual nanowires. Cathodoluminescence mapping reveals that the optical emission originates from relatively short nanowire segments, which is explained in terms of exciton localization on irregularities of nanowire core diameter. Magneto-optical study performed on several individual nanowires reveals a change from light hole to heavy hole character of the excitonic emission depending on the emission energy, i.e., on the size of the emitting object. The results are interpreted in terms of the influence of axial and radial quantum confinement on excitons in ultrathin nanowires.

Thermo-electro-optical properties of seamless metallic nanowire networks for transparent conductor applications.

Rapid reaction time, high attainable temperatures, minimum operating voltage, excellent optical transmittance, and tunable sheet resistance are all desirable properties of transparent conductors, which are important thin-film components in numerous electronic devices. A seamless nanowire network (NWN) refers to a structure composed of nanowires that lack interwire contact junctions, resulting in a continuous and uninterrupted network arrangement. This seamless nature leads to unique properties, including high conductivity and surface area-to-volume ratios, which make it a promising candidate for a vast application range in nanotechnology. Here, we have conducted an in-depth computational investigation to study the thermo-electro-optical properties of seamless nanowire networks and understand their geometrical features using in-house computational implementations and a coupled electrothermal model built in COMSOL Multiphysics software. Sheet resistance calculations were performed using Ohm's law combined with Kirchhoff circuit laws for a random resistor network and compared with those obtained employing COMSOL. In this work, aluminium, gold, copper, and silver nanowires are the materials of choice for testing the transparent conduction performance of our systems. We have studied a wide range of tuning parameters, including the network area fraction, the width-to-depth aspect ratio, and the length of the nanowire segments. We obtained corresponding figures of merit (optical transmittance versus sheet resistance) and temperature distributions to provide a complete characterization of the performance of real-world transparent conductors idealized with seamless NWNs. Our analysis accounted for the thermo-electro-optical responses of the NWNs and the inspection of various controlling parameters depending on system design considerations to shed light on how the electrical transport, optical qualities, and thermal management of these systems can be optimized.

Current-induced zero-field domain wall depinning in cylindrical nanowires

Multi-segmented cylindrical nanowires have properties that make them attractive for high-density, high-speed logic and memory applications. Investigations of the current-induced domain wall motion in cylindrical nanowires have, so far, typically been conducted with a background magnetic field. However, if performed at zero external field, they would be much more viable for their use in prospective electronic devices. Here, we present an all-magneto electrical method to consistently pin domain walls in multi-segmented nanowires and induce their de-pinning using current pulses. The experiments were conducted with compositionally modulated three-segmented nickel/cobalt/nickel and two-segmented cobalt/nickel nanowires of 190 and 150 nm diameter, respectively, where the soft/hard magnetic texture has been fairly studied. We find that for the 3 segmented nanowire, the domain wall can be de-pinned independent of the polarity of the pulse, while for the 2 segmented nanowire the domain wall de-pins only for one polarity. Applying current pulses of 1 × 1012 A/m2, we use a pulse width of 22 ns to estimate a lower boundary for the domain wall speed of 634.54 m/s in cobalt. We study the resistive heating effect from the DC measurement current to find a temperature increase of no more than 2 °C after more than 20 h of tests.

(Invited) Enhanced Efficiency of AlInN Nanowire Ultraviolet Light-Emitting Diodes Using Photonic Crystal Structures

High efficiency ultraviolet (UV) light-emitting diodes (LEDs) are in high demand for a wide range of applications [1-3]. Due to its wide bandgap, covering from deep UV to near visible, AlGaN semiconductor has been intensively studied for high efficiency UV LEDs. However, the performance of AlGaN UV LEDs is still limited, especially in the deep UV wavelength region, due to large dislocation density and extremely inefficient p-type doping in AlGaN film. Therefore, AlGaN UV LEDs have been suffering from low internal quantum efficiency (IQE), poor light extraction efficiency (LEE), and low external quantum efficiency (EQE). Alternatively, AlInN alloy is relatively unexplored for light-emitters even though it holds great potential application in UV and visible light-emitting devices. Recent studies have reported that InAlN has a large optical gain for deep UV LEDs. In this context, we have successfully developed AlInN nanowire LEDs with strong emission in the UV wavelength regime. The AlInN nanowires achieved a high IQE of >50% and significantly strong Transverse Magnetic (TM) polarized emission at 299nm.The AlInN nanowire LED structures were spontaneously grown on n-Si (111) substrates under nitrogen rich conditions by a Veeco GEN II molecular beam epitaxy (MBE) system. The AlInN nanowire was grown on GaN nanowire template. The device active region consists of ~ 100 nm n-Al0.78In0.22N, 40 nm undoped Al0.75In0.25N well and 100 nm p-Al0.78In0.22N layers. The GaN nanowire segments were grown at ~ 800 °C, nitrogen flow rate of 0.5-1.0 sccm, and forward plasma power of ~ 400 W. However, the growth temperature of the active region was at ~ 670 ̶ 700 °C to increase the In incorporation in AlInN segments and the nitrogen flow rate was kept at 2.5 sccm. The MBE grown AlInN under nitrogen rich condition offers an effective approach to eliminate the composition inhomogeneity in the AlInN. The nanowires are vertically aligned to the Si substrate with quite uniform dimension, as illustrated in Figure 1(a). Figure 1(b) presents the structure of a single AlInN nanowire LED. The photoluminescence (PL) spectra of AlInN nanowires were measured using a 266 nm diode-pumped solid-state laser as the excitation source. The peak emissions vary from 280nm to 365nm by varying the Al/In composition in the AlInN layers. The peak emission is shifted to shorter wavelength when the substrate temperature gets increase which is attributed to the increased In adatom desorption at higher growth temperature, resulted in the reduced In composition in the AlInN segment. The AlInN/GaN nanowire exhibits relatively high IQE which is estimated of ~ 52% at room temperature [3, 4]. Illustrated in Figure 1(c), the UV nanowire LED holds strong emission spectra at ~299 nm with a negligible shift in the peak wavelength, attributing to the high crystalline quality and reduced quantum-confined Stark effect in the AlInN nanowires. The LED has a low turn-on voltage of ~5V and low reverse leakage current less, i.e., ~0.5 µA at -8.6V. Moreover, as shown in Figure 1(d), we have demonstrated that the LEE of the AlInN nanowire LEDs could reach ~ 63% using hexagonal photonic crystal nanowire structures which is significantly higher compared to that of the random nanowire arrays [5]. This study paves the way for the development of high-power ultraviolet light-emitters using AlInN nanowire arrays.

Lattice-mismatch-free growth of organic heterostructure nanowires from cocrystals to alloys

Organic heterostructure nanowires, such as multiblock, core/shell, branch-like and related compounds, have attracted chemists’ extensive attention because of their novel physicochemical properties. However, owing to the difficulty in solving the lattice mismatch of distinct molecules, the construction of organic heterostructures at large scale remains challenging, which restricts its wide use in future applications. In this work, we define a concept of lattice-mismatch-free for hierarchical self-assembly of organic semiconductor molecules, allowing for the large-scale synthesis of organic heterostructure nanowires composed of the organic alloys and cocrystals. Thus, various types of organic triblock nanowires are prepared in large scale, and the length ratio of different segments of the triblock nanowires can be precisely regulated by changing the stoichiometric ratio of different components. These results pave the way towards fine synthesis of heterostructures in a large scale and facilitate their applications in organic optoelectronics at micro/nanoscale.

Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core\u2013shell nanowires

Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core–shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments.

Surface engineering on segmented copper-iron nanowires arrays

Surface engineering that could modulate the surface shape to be endowed with the high specific surface ratio, abundant chemical dangling bonds and improved defects exposure is highly desired and needs further exploring. Here, we report a facile strategy of surface engineering on decorating the controllable segmented copper-iron nanowires arrays (Cu-Fe NWs) with their respective hydroxides. Specifically, the pristine segmented Cu-Fe NWs are firstly synthesized via sequentially electrodepositing Cu NWs and Fe NWs inside the nanochannels of anode aluminum oxide (AAO) template. Subsequently, the surface and interface of Cu-Fe NWs are wet-chemically etched, in which the metallic Cu and Fe are partially converted into Cu(OH)x nano-fibrous roots (NFRs) and FeO(OH)y nanoparticles (NPs), and finally decorate around the respective outer-surface of Cu NWs and Fe NWs segments. As one case of the applications in hydrogen evolution reaction (HER), our surface-modified Cu-Fe NWs exhibit improved catalytic activity compared with Fe NWs.

Computer vision-assisted investigation of boiling heat transfer on segmented nanowires with vertical wettability.

The boiling efficacy is intrinsically tethered to trade-offs between the desire for bubble nucleation and necessity of vapor removal. The solution to these competing demands requires the separation of bubble activity and liquid delivery, often achieved through surface engineering. In this study, we independently engineer bubble nucleation and departure mechanisms through the design of heterogeneous and segmented nanowires with dual wettability with the aim of pushing the limit of structure-enhanced boiling heat transfer performances. The demonstration of separating liquid and vapor pathways outperforms state-of-the-art hierarchical nanowires, in particular, at low heat flux regimes while maintaining equal performances at high heat fluxes. A deep-learning based computer vision framework realized the autonomous curation and extraction of hidden big data along with digitalized bubbles. The combined efforts of materials design, deep learning techniques, and data-driven approach shed light on the mechanistic relationship between vapor/liquid pathways, bubble statistics, and phase change performance.

Magnonic bands in periodic arrays of vertically-stacked cylindrical magnetic nanoelements

The spin-wave spectra are studied theoretically in periodic magnonic crystals (MCs) of vertically-stacked cylindrical nickel nanodisks or nanorings separated by nonmagnetic spacers, resulting in infinitely long segmented nanowire or nanotube MC arrays, respectively. A microscopic or Hamiltonian-based approach is employed for the magnetization dynamics, in which an external magnetic field is applied along the cylinder axis and the periodic length is varied by changing the length of the spacers. The results show a broadening and shift of the spin-wave frequency bands at smaller spacer length due to the strong dipolar inter-element coupling, which also modifies the spatially-inhomogeneous equilibrium magnetization in the finite-length cylindrical elements. The effects are found to be more pronounced in a nanotube MC than in a nanowire MC, mainly because the absence of the core in a nanotube favours vortex states.

The Magnetic Properties of Fe/Cu Multilayered Nanowires: The Role of the Number of Fe Layers and Their Thickness.

Multi-segmented bilayered Fe/Cu nanowires have been fabricated through the electrodeposition in porous anodic alumina membranes. We have assessed, with the support of micromagnetic simulations, the dependence of fabricated nanostructures’ magnetic properties either on the number of Fe/Cu bilayers or on the length of the magnetic layers, by fixing both the nonmagnetic segment length and the wire diameter. The magnetic reversal, in the segmented Fe nanowires (NWs) with a 300 nm length, occurs through the nucleation and propagation of a vortex domain wall (V-DW) from the extremities of each segment. By increasing the number of bilayers, the coercive field progressively increases due to the small magnetostatic coupling between Fe segments, but the coercivity found in an Fe continuous nanowire is not reached, since the interactions between layers is limited by the Cu separation. On the other hand, Fe segments 30 nm in length have exhibited a vortex configuration, with around 60% of the magnetization pointing parallel to the wires’ long axis, which is equivalent to an isolated Fe nanodisc. By increasing the Fe segment length, a magnetic reversal occurred through the nucleation and propagation of a V-DW from the extremities of each segment, similar to what happens in a long cylindrical Fe nanowire. The particular case of the Fe/Cu bilayered nanowires with Fe segments 20 nm in length revealed a magnetization oriented in opposite directions, forming a synthetic antiferromagnetic system with coercivity and remanence values close to zero.

Template-less Synthesis of Coded Au Nanowires.

Morphological coding of nanostructures represents a capability in rapid modulation of structural features and most importantly, the transcription of information into nanoscale. Exploiting the regioselectivity in the template-less electrochemical synthesis of ultrathin Au nanowires, we show that rapid alternation of applied potential would cause corresponding change in the width of the emerging nanowire segments. By understanding the growth kinetics, a strong correlation between the nanowire morphologies and the deposition potential is established and applied in emulating the Morse code.

Non-Majorana states yield nearly quantized conductance in proximatized nanowires

Conductance at zero source-drain voltage bias in InSb nanowire/NbTiN superconductor devices exhibits peaks that are close to a quantized value of $2e^2/h$. The nearly quantized resonances evolve in the tunnel barrier strength, magnetic field and magnetic field orientation in a way consistent with Majorana zero modes. Our devices feature two tunnel probes on both ends of the nanowire separated by a 400 nm nanowire segment covered by the superconductor. We only find nearly quantized zero bias peaks localized to one end of the nanowire, while conductance dips are observed for the same parameters on the other end. This undermines the Majorana explanation as Majorana modes must come in pairs. We do identify states delocalized from end to end near zero magnetic field and at higher electron density, which is not in the basic Majorana regime. We lay out procedures for assessing the nonlocality of subgap wavefunctions and provide a classification of nanowire bound states based on their localization.

Изменение направления оси легкого намагничивания массивов сегментированных нанонитей Ni/Cu с увеличением длины сегмента Ni

Arrays of ordered segmented nanowires are considered as a promising material for three-dimensional information storage systems. However, the presence of a large number of competing interactions significantly complicates the description of the magnetic behavior of such systems. In this work, the influence of the length of the nickel segment on the integral magnetic properties of the array is investigated. In particular, it is shown that the change in the direction of the easy axis of magnetization occurs when the segment length to diameter ratio is in the range from 10 to 20.