SCR-based Device Research Articles

Simulation, characterization and implementation of a new SCR-based device with a turn-off capability for EOS-immune ESD power supply clamps in advanced CMOS technology nodes

A new SCR-based device for ESD protection is presented through TCAD simulation and experimental results on a standalone configuration and for a power supply ESD clamp strategy. The new device can turn-off even if the voltage power supply is applied at its Anode. We use 3D TCAD simulation for understanding its turn-on and turn-off behavior. At the same time, the flexibility of the EOS test bench allows for standalone and power supply clamp characterizations at chip level at ambient and high temperature.

The novel SCR-based ESD protection with low triggering and high holding voltages

This paper introduces a novel silicon controlled rectifier (SCR)-based circuit. The proposed device using 70nm DRAM process obtained the high holding and low triggering voltages by using variable IR drop. These characteristics enable to discharge electrostatic discharge (ESD) current and ensure latch-up immunity for normal operations. Also, the proposed scheme is easily implemented through the modification of the metal connection compare to the conventional SCR-based device. We investigated electrical characteristics by both measurements and TCAD simulations. Measurement results showed the proposed SCR had triggering voltage of 6.2V, holding voltage of 3.3V, and the second breakdown current of 58mA/μm.

Design and Integration of Novel SCR-Based Devices for ESD Protection in CMOS/BiCMOS Technologies

Robust and novel devices called high-holding low-voltage trigger silicon controlled rectifiers (HH-LVTSCRs) for electrostatic discharge (ESD) protection of integrated circuits (ICs) are designed, fabricated and characterized. The S-type current-voltage (I-V) characteristics of the HH-LVTSCRs are adjustable to different operating conditions by changing the device dimensions and terminal interconnections. Comparison between complementary n- and p-type HH-LVTSCR devices shows that n-type devices perform better than p-type devices when a low holding voltage (V/sub H/) is allowed during the on-state of the ESD protection structure, but when a relatively high holding voltage is required, p-type devices perform better. Results further demonstrate that HH-LVTSCRs with a multiple-finger layout render high levels of ESD protection per unit area, applicable in the design of ICs with stringent ESD protection requirements of over 15 kV IEC.

Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits

An overview on the electrostatic discharge (ESD) protection circuits by using the silicon controlled rectifier (SCR)-based devices in CMOS ICs is presented. The history and evolution of SCR device used for on-chip ESD protection is introduced. Moreover, two practical problems (higher switching voltage and transient-induced latchup issue) limiting the use of SCR-based devices in on-chip ESD protection are reported. Some modified device structures and trigger-assist circuit techniques to reduce the switching voltage of SCR-based devices are discussed. The solutions to overcome latchup issue in the SCR-based devices are also discussed to safely apply the SCR-based devices for on-chip ESD protection in CMOS IC products.

Novel and Robust Silicon-Controlled Rectifier (SCR) Based Devices for On-Chip ESD Protection

Silicon-controlled rectifiers (SCRs) are frequently used to build on-chip electrostatic discharge (ESD) protection structures, but SCRs are not sufficiently robust to meet a wide range of ESD requirements in various integrated circuits. In this paper, a novel and robust SCR-based device called the HHLVTSCR is presented. It is demonstrated that HHLVTSCR can exhibit various characteristics useful for ESD solutions. An example is also included to illustrate how HHVLTSCRs can be used to provide ESD protection to a practical application.