Scanning Tunneling Spectroscopy Measurements Research Articles

Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi2Te4 Films.

The interface of two materials can harbor unexpected emergent phenomena. One example is interface-induced superconductivity. In this work, we employ molecular beam epitaxy to grow a series of heterostructures formed by stacking together two nonsuperconducting antiferromagnetic materials, an intrinsic antiferromagnetic topological insulator MnBi2Te4 and an antiferromagnetic iron chalcogenide FeTe. Our electrical transport measurements reveal interface-induced superconductivity in these heterostructures. By performing scanning tunneling microscopy and spectroscopy measurements, we observe a proximity-induced superconducting gap on the top surface of the MnBi2Te4 layer, confirming the coexistence of superconductivity and antiferromagnetism in the MnBi2Te4 layer. Our findings will advance the fundamental inquiries into the topological superconducting phase in hybrid devices and provide a promising platform for the exploration of chiral Majorana physics in MnBi2Te4-based heterostructures.

Lateral Quantum Confinement Effect on High-TC Superconducting FeSe Monolayer.

Despite decades of research in spatially confined superconducting systems to understand the modification of superconductivity from reduced length scales, the investigation of the quantum confinement effect on high-temperature superconductors remains an outstanding challenge. Here, we report scanning tunneling spectroscopy measurements on laterally confined FeSe monolayers on SrTiO3 substrates, which are formed by epitaxially growing FeSe films with a coverage less than one unit cell. Comparing to the uniform regions of FeSe monolayers, the peninsula regions at the monolayer boundary exhibit reduced Fermi energy and undiminished superconductivity, leading to a putative crossover from a Bardeen-Cooper-Schrieffer state to a Bose-Einstein condensate state. In isolated FeSe monolayer islands, superconductivity is shown to exist in samples of smaller volume in contrast to conventional superconductors, while the validity of Anderson's criterion remains fulfilled. Our work reveals lateral quantum confinement effects in unconventional superconductors to enrich the understanding of high-temperature superconductivity in low-dimensional systems.

Demonstrating Kondo behavior by temperature-dependent scanning tunneling spectroscopy

The Kondo effect describes the scattering of conduction electrons by magnetic impurities, manifesting as an electronic resonance at the Fermi energy with a distinctive temperature evolution. In this Letter, we present a critical evaluation of the current methodology employed to demonstrate Kondo behavior in transport measurements, underscoring the limitations of established theoretical frameworks and the influence of extrinsic broadening. We introduce an approach for analyzing spectroscopic indicators of the Kondo effect, employing the Hurwitz-Fano lineshape as a model for the Kondo resonance in the presence of extrinsic broadening. Through precise scanning tunneling spectroscopy measurements on an exemplary spin-1/2 Kondo system, phenalenyl on Au(111), we demonstrate the efficacy of our proposed protocol in extracting accurate intrinsic Kondo linewidths from finite-temperature measurements. The extracted linewidths exhibit a robust fit with a recently derived expression for the temperature-dependent intrinsic Kondo linewidth, providing compelling evidence for the validity of the underlying theory. Published by the American Physical Society 2024

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T-TaS2.

Vertical charge order shapes the electronic properties in layered charge density wave (CDW) materials. Various stacking orders inevitably create nanoscale domains with distinct electronic structures inaccessible to bulk probes. Here, the stacking characteristics of bulk 1T-TaS2 are analyzed using scanning tunneling spectroscopy (STS) and density functional theory (DFT) calculations. It is observed that Mott-insulating domains undergo a transition to band-insulating domains restoring vertical dimerization of the CDWs. Furthermore, STS measurements covering a wide terrace reveal two distinct band insulating domains differentiated by band edge broadening. These DFT calculations reveal that the Mott insulating layers preferably reside on the subsurface, forming broader band edges in the neighboring band insulating layers. Ultimately, buried Mott insulating layers believed to harbor the quantum spin liquid phase are identified. These results resolve persistent issues regarding vertical charge order in 1T-TaS2, providing a new perspective for investigating emergent quantum phenomena in layered CDWmaterials.

Mott Gap Filling by Doping Electrons through Depositing One Sub-Monolayer Thin Film of Rb on Ca2CuO2Cl2

Understanding the doping evolution from a Mott insulator to a superconductor probably holds the key to resolve the mystery of unconventional superconductivity in copper oxides. To elucidate the evolution of the electronic state starting from the Mott insulator, we dose the surface of the parent phase Ca2CuO2Cl2 by depositing Rb atoms, which are supposed to donate electrons to the CuO2 planes underneath. We successfully achieved the Rb sub-monolayer thin films in forming the square lattice. The scanning tunneling microscopy or spectroscopy measurements on the surface show that the Fermi energy is pinned within the Mott gap but close to the edge of the charge transfer band. In addition, an in-gap state appears at the bottom of the upper Hubbard band (UHB), and the Mott gap will be significantly diminished. Combined with the Cl defect and the Rb adatom/cluster results, the electron doping is likely to increase the spectra weight of the UHB for the double occupancy. Our results provide information to understand the electron doping to the parent compound of cuprates.

Topological Structure Realized in Cove-Edged Graphene Nanoribbons via Incorporation of Periodic Pentagon Rings.

Cove-edged zigzag graphene nanoribbons are predicted to show metallic, topological, or trivial semiconducting band structures, which are precisely determined by their cove offset positions at both edges as well as the ribbon width. However, due to the challenge of introducing coves into zigzag-edged graphene nanoribbons, only a few cove-edged graphene nanoribbons with trivial semiconducting bandgaps have been realized experimentally. Here, we report that the topological band structure can be realized in cove-edged graphene nanoribbons by embedding periodic pentagon rings on the cove edges through on-surface synthesis. Upon noncontact atomic force microscopy and scanning tunneling spectroscopy measurements, the chemical and electronic structures of cove-edged graphene nanoribbons with periodic pentagon rings have been characterized for different lengths. Combined with theoretical calculations, we find that upon inducing periodic pentagon rings the cove-edged graphene nanoribbons exhibit nontrivial topological structures. Our results provide insights for the design and understanding of the topological character in cove-edged graphene nanoribbons.

Revealing the temperature-driven Lifshitz transition in p-type Mg3Sb2-based thermoelectric materials

The manipulation of native atomic defects and their thermal excitations plays vital roles in the thermoelectric performance of Mg3Sb2-based materials. While native defects manipulation has been intensively studied in p-type Mg3Sb2, there exists interesting unsolved issue regarding the abnormal semiconducting electrical behavior in most of samples. In this work, high quality Mg3Sb2 and Mg3Bi2 (00l) films are fabricated by molecular beam epitaxy technique, while variable temperature angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy measurements are utilized for resolving the aforementioned issue. The thermal excitation of Mg interstitials (the electron donor) results in an obvious downshift of valence bands with rising temperature in both the p-type Mg3Sb2 and Mg3Bi2. Meanwhile, the interesting temperature-driven Lifshitz transition is discovered in the p-type Mg3Sb2, as indicated by the change of Fermi surface topology. Above the Lifshitz transition temperature, the Fermi level of p-type Mg3Sb2 will enter the bandgap, which leads to the abnormal semiconducting electrical behavior. This work discloses the excitation of native defects and temperature-driven Lifshitz transition, which are the main causes for the anomalies in electrical transport of p-type Mg3Sb2-based materials, and also provides valuable insights for further improving their thermoelectric performance.

2D Lateral Heterojunction Arrays with Tailored Interface Band Bending.

Two-dimensional (2D) lateral heterojunction arrays, characterized by well-defined electronic interfaces, hold significant promise for advancing next-generation electronic devices. Despite this potential, the efficient synthesis of high-density lateral heterojunctions with tunable interfacial band alignment remains a challenging. Here, a novel strategy is reported for the fabrication of lateral heterojunction arrays between monolayer Si2Te2 grown on Sb2Te3 (ML-Si2Te2@Sb2Te3) and one-quintuple-layer Sb2Te3 grown on monolayer Si2Te2 (1QL-Sb2Te3@ML-Si2Te2) on a p-doped Sb2Te3 substrate. The site-specific formation of numerous periodically arranged 2D ML-Si2Te2@Sb2Te3/1QL-Sb2Te3@ML-Si2Te2 lateral heterojunctions is realized solely through three epitaxial growth steps of thick-Sb2Te3, ML-Si2Te2, and 1QL-Sb2Te3 films, sequentially. More importantly, the precisely engineering of the interfacial band alignment is realized, by manipulating the substrate's p-doping effect with lateral spatial dependency, on each ML-Si2Te2@Sb2Te3/1QL-Sb2Te3@ML-Si2Te2 junction. Atomically sharp interfaces of the junctions with continuous lattices are observed by scanning tunneling microscopy. Scanning tunneling spectroscopy measurements directly reveal the tailored type-II band bending at the interface. This reported strategy opens avenues for advancing lateral epitaxy technology, facilitating practical applications of 2D in-plane heterojunctions.

The topological soliton in Peierls semimetal Sb

Sb is a three-dimensional Peierls insulator. The Peierls instability gives rise to doubling of the translational period along the [111] direction and alternating van der Waals and covalent bonding between (111) atomic planes. At the (111) surface of Sb, the Peierls condition is violated, which in theory can give rise to properties differing from the bulk. The atomic and electronic structure of the (111) surface of Sb have been simulated by density functional theory calculations. We have considered the two possible (111) surfaces, containing van der Waals dangling bonds or containing covalent dangling bonds. In the models, the surfaces are infinite and the structure is defect free. Structural optimization of the model containing covalent dangling bonds results in strong deformation, which is well described by a topological soliton within the Su–Schrieffer–Heeger model centered about 25 Å below the surface. The electronic states associated with the soliton see an increase in the density of states (DOS) at the Fermi level by around an order of magnitude at the soliton center. Scanning tunneling microscopy and spectroscopy (STM/STS) measurements reveal two distinct surface regions, indicating that there are different surface regions cleaving van der Waals and covalent bonds. The DFT is in good agreement with the STM/STS experiments.

ARPES investigation of the electronic structure and its evolution in magnetic topological insulator MnBi2+2nTe4+3n family.

In the past 5 years, there has been significant research interest in the intrinsic magnetic topological insulator family compounds MnBi2+2nTe4+3n (where n=0, 1, 2 …). In particular, exfoliated thin films of MnBi2Te4 have led to numerous experimental breakthroughs, such as the quantum anomalous Hall effect, axion insulator phase and high-Chern number quantum Hall effect without Landau levels. However, despite extensive efforts, the energy gap of the topological surface states due to exchange magnetic coupling, which is a key feature of the characteristic band structure of the system, remains experimentally elusive. The electronic structure measured by using angle-resolved photoemission (ARPES) shows significant deviation from ab initio prediction and scanning tunneling spectroscopy measurements, making it challenging to understand the transport results based on the electronic structure. This paper reviews the measurements of the band structure of MnBi2+2nTe4+3n magnetic topological insulators using ARPES, focusing on the evolution of their electronic structures with temperature, surface and bulk doping and film thickness. The aim of the review is to construct a unified picture of the electronic structure of MnBi2+2nTe4+3n compounds and explore possible control of their topological properties.

Microscopy aided detection of the self-intercalation mechanism and in situ electronic properties in chromium selenide.

Two-dimensional (2D) chromium-based self-intercalated materials Cr1+nX2 (0 ≤ n ≤ 1, X = S, Se, Te) have attracted much attention because of their tunable magnetism with good environmental stability. Intriguingly, the magnetic and electrical properties of the materials can be effectively tuned by altering the coverage and spatial arrangement of the intercalated Cr (ic-Cr) within the van der Waals gap, contributing to different stoichiometries. Several different Cr1+nX2 systems have been widely investigated recently; however, those with the same stoichiometric ratio (such as Cr1.25Te2) were reported to exhibit disparate magnetic properties, which still lacks explanation. Therefore, a systematic in situ study of the mechanisms with microscopy techniques is in high demand to look into the origin of these discrepancies. Herein, 2D self-intercalated Cr1+nSe2 nanoflakes were synthesized as a platform to conduct the characterization. Combining scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM), we studied in depth the microscopic structure and local electronic properties of the Cr1+nSe2 nanoflakes. The self-intercalation mechanism of ic-Cr and local stoichiometric-ratio variation in a Cr1+nSe2 ultrathin nanoflake is clearly detected at the nanometer scale. Scanning tunneling spectroscopy (STS) measurements indicate that Cr1.5Se2/Cr2Se2 and Cr1.25Se2 exhibit conductive and semiconductive behaviors, respectively. The STM tip manipulation method is further applied to manipulate the microstructure of Cr1+nSe2, which successfully produces clean zigzag-type boundaries. Our systematic microscopy study paves the way for the in-depth study of the magnetic mechanism of 2D self-intercalated magnets at the nano/micro scale and the development of new magnetic and spintronic devices.

From Solution to Surface: Persistence of the Diradical Character of a Diindenoanthracene Derivative on a Metallic Substrate.

Organic diradicals are envisioned as elementary building blocks for designing a new generation of spintronic devices and have been used in constructing prototypical field effect transistors and nonlinear optical devices. Open-shell systems, however, are also reactive, thus requiring design strategies to "protect" their radical character from the environment, especially when they are embedded in solid-state devices. Here, we report the persistence on a metallic surface of the diradical character of a diindeno[b,i]anthracene (DIAn) core protected by bulky end-groups. Our scanning tunneling spectroscopy measurements on single-molecules detected singlet-triplet excitations that were absent for DIAn species packed in assembled structures. Density functional theory simulations unravel that the molecular geometry on the metal substrate can crucially modify the value of the singlet-triplet gap via the delocalization of the radical sites. The persistence of the diradical character over metallic substrates is a promising finding for integrating radical-based materials into functional devices.

Electronic stripe patterns near the fermi level of tetragonal Fe(Se,S)

FeSe1−xSx remains one of the most enigmatic systems of Fe-based superconductors. While much is known about the orthorhombic parent compound, FeSe, the tetragonal samples, FeSe1−xSx with x > 0.17, remain relatively unexplored. Here, we provide an in-depth investigation of the electronic states of tetragonal FeSe0.81S0.19, using scanning tunneling microscopy and spectroscopy (STM/S) measurements, supported by angle-resolved photoemission spectroscopy (ARPES) and theoretical modeling. We analyze modulations of the local density of states (LDOS) near and away from Fe vacancy defects separately and identify quasiparticle interference (QPI) signals originating from multiple regions of the Brillouin zone, including the bands at the zone corners. We also observe that QPI signals coexist with a much stronger LDOS modulation for states near the Fermi level whose period is independent of energy. Our measurements further reveal that this strong pattern appears in the STS measurements as short range stripe patterns that are locally two-fold symmetric. Since these stripe patterns coexist with four-fold symmetric QPI around Fe-vacancies, the origin of their local two-fold symmetry must be distinct from that of nematic states in orthorhombic samples. We explore several aspects related to the stripes, such as the role of S and Fe-vacancy defects, and whether they can be explained by QPI. We consider the possibility that the observed stripe patterns may represent incipient charge order correlations, similar to those observed in the cuprates.

Epitaxial growth of ultrathin gallium films on Cd(0001)

Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. It is found that Ga films exhibit the epitaxial growth with the pseudomorphic 1 × 1 lattice. The Ga islands deposited at 100 K show a ramified shape due to the suppressed edge diffusion and corner crossing. Furthermore, the majority of Ga islands reveal flat tops and a preferred height of three atomic layers, indicating the electronic growth at low temperature. Annealing to room temperature leads to not only the growth mode transition from electronic growth to conventional Stranski–Krastanov growth, but also the shape transition from ramified islands to smooth compact islands. Scanning tunneling spectroscopy (STS) measurements reveal that the Ga monolayer exhibits metallic behavior. DFT calculations indicate that all the interfacial Ga atoms occupy the energetically favorable hcp-hollow sites of the substrate. The charge density difference analysis demonstrates that the charge transfer from the Cd substrate to the Ga atoms is negligible, and there is weak interaction between Ga atoms and the Cd substrate. These results shall shed important light on fabrication of ultrathin Ga films on metal substrates with novel physical properties.

Native Pb vacancy defects induced p-type characteristic in epitaxial monolayer PbSe

PbSe, a predicted two-dimensional (2D) topological crystalline insulator (TCI) in the monolayer limit, possess excellent thermoelectric and infrared optical properties. Native defects in PbSe take a crucial role for the applications. However, little attention has been paid to the defect induced doping characteristics. Here, we provide an experimental and theoretical investigation of defect induced p-type characteristic on epitaxial monolayer PbSe on Au(111). Scanning tunneling microscopy (STM) measurements demonstrate an epitaxial PbSe monolayer with a fourfold symmetric lattice. Combined scanning tunneling spectroscopy (STS) and density functional theory (DFT) calculations reveal a quasi-particle bandgap of 0.8 eV of PbSe. STM results unveil that there are two types of defects on the surface, one is related the vacancies of Pb atoms and the other is the replacement of the absent Se atoms by Pb. Corresponding theoretical optimization confirms the structures of the defects. More importantly, both STS measurements and DFT calculations give evidence that the Pb vacancies move the Fermi energy inside the valence band and produce extra holes, leading to p-type characteristics of PbSe. Our work provides effective information for the future research of device performance based on PbSe films.

Unusual crossover from Bardeen-Cooper-Schrieffer to Bose-Einstein-condensate superconductivity in iron chalcogenides

The BCS-BEC (Bardeen-Cooper-Schrieffer–Bose-Einstein-condensate) crossover from strongly overlapping Cooper pairs to non-overlapping composite bosons in the strong coupling limit has been a long-standing issue of interacting many-body fermion systems. Recently, FeSe semimetal with hole and electron bands emerged as a high-transition-temperature (high-Tc) superconductor located in the BCS-BEC crossover regime, owing to its very small Fermi energies. In FeSe, however, an ordinary BCS-like heat-capacity jump is observed at Tc, posing a fundamental question on the characteristics of the BCS-BEC crossover. Here we report on high-resolution heat capacity, magnetic torque, and scanning tunneling spectroscopy measurements in FeSe1−xSx. Upon entering the tetragonal phase at x > 0.17, where nematic order is suppressed, Tc discontinuously decreases. In this phase, highly non-mean-field behaviours consistent with BEC-like pairing are found in the thermodynamic quantities with giant superconducting fluctuations extending far above Tc, implying the change of pairing nature. Moreover, the pseudogap formation, which is expected in BCS-BEC crossover of single-band superconductors, is not observed in the tunneling spectra. These results illuminate highly unusual features of the superconducting states in the crossover regime with multiband electronic structure and competing electronic instabilities.

Quenched Excitons in WSe2/α-RuCl3 Heterostructures Revealed by Multimessenger Nanoscopy.

We investigate heterostructures composed of monolayer WSe2 stacked on α-RuCl3 using a combination of Terahertz (THz) and infrared (IR) nanospectroscopy and imaging, scanning tunneling spectroscopy (STS), and photoluminescence (PL). Our observations reveal itinerant carriers in the heterostructure prompted by charge transfer across the WSe2/α-RuCl3 interface. Local STS measurements show the Fermi level is shifted to the valence band edge of WSe2 which is consistent with p-type doping and verified by density functional theory (DFT) calculations. We observe prominent resonances in near-IR nano-optical and PL spectra, which are associated with the A-exciton of WSe2. We identify a concomitant, near total, quenching of the A-exciton resonance in the WSe2/α-RuCl3 heterostructure. Our nano-optical measurements show that the charge-transfer doping vanishes while excitonic resonances exhibit near-total recovery in "nanobubbles", where WSe2 and α-RuCl3 are separated by nanometer distances. Our broadband nanoinfrared inquiry elucidates local electrodynamics of excitons and an electron-hole plasma in the WSe2/α-RuCl3 system.

Unraveling the atomic and electronic structure of nanocrystals on superconducting Nb(110): Impact of the oxygen monolayer

The niobium surface is almost always covered by a native oxide layer which greatly influences the performance of superconducting devices. Here we investigate the highly stable niobium oxide overlayer of Nb(110), which is characterized by its distinctive nanocrystal structure as observed by scanning tunneling microscopy (STM). Our ab initio density functional theory (DFT) calculations show that a subtle reconstruction in the surface niobium atoms gives rise to rows of fourfold coordinated oxygen separated by regions of threefold coordinated oxygen. The fourfold oxygen rows are determined to be the source of the nanocrystal pattern observed in STM and the two chemical states of oxygen observed in core-level x-ray photoelectron spectroscopy (XPS) are ascribed to the threefold and fourfold oxygens. Furthermore, we find excellent agreement between the DFT calculated electronic structure with scanning tunneling spectroscopy and valence XPS measurements.

Multiple Electronic Phases Coexisting under Inhomogeneous Strains in the Correlated Insulator.

Monolayer transition metal dichalcogenides (TMDs) can host exotic phenomena such as correlated insulating and charge-density-wave (CDW) phases. Such properties are strongly dependent on the precise atomic arrangements. Strain, as an effective tuning parameter in atomic arrangements, has been widely used for tailoring material's structures and related properties, yet to date, a convincing demonstration of strain-induced dedicate phase transition at nanometer scale in monolayer TMDs has been lacking. Here, a strain engineering technique is developed to controllably introduce out-of-plane atomic deformations in monolayer CDW material 1T-NbSe2 . The scanning tunneling microscopy and spectroscopy (STM and STS) measurements, accompanied by first-principles calculations, demonstrate that the CDW phase of 1T-NbSe2 can survive under both tensile and compressive strains even up to 5%. Moreover, significant strain-induced phase transitions are observed, i.e., tensile (compressive) strains can drive 1T-NbSe2 from an intrinsic-correlated insulator into a band insulator (metal). Furthermore, experimental evidence of the multiple electronic phase coexistence at the nanoscale is provided. The results shed new lights on the strain engineering of correlated insulator and useful for design and development of strain-related nanodevices.

Atomic structure and peculiarities of the electronic properties of Br layers on Ag(111) at different coverages

The structure and electronic properties of Br layers on Ag(111) at different coverage were studied by low-temperature scanning tunnelling microscopy, scanning tunnelling spectroscopy (STS) and density functional theory (DFT) calculations. The Br layers are found to form a hexagonal (3×3)R30∘ structure for coverage ⁓ 0.3 monolayer (ML) and a striped (61−12) structure for coverage ⁓ 0.4 ML. STS measurements reveal suppressed differential conductance for both structures at voltages ranging between − 1.2 and 1.4 V, and surprisingly intense peaks at 1.5 V and 2.0 V. The position of the high-intensity peak in the spectra for the striped structure shows lateral variations within the unit cell and is determined by the Br coverage. In our structural model for the striped structure, supported by DFT calculations, the hexagonal (3×3)R30∘ structure transforms to the striped structure due to uniaxial inhomogeneous compression of Br atomic rows. The local work function for the Br/Ag(111) surface, estimated from dz/dV(V) measurements, is 5.0 ± 0.2 eV, which is higher than for the Ag(111) surface (4.4 ± 0.1 eV). This suggests an increase in the electrostatic dipole barrier on Ag(111) due to Br adsorption. Combined with the suppressed local density of states around the Fermi level observed by STS, these results clarify the usefulness of Br layers in reducing the coupling between Ag(111) electrons and adsorbates.