SAW Propagation Loss Research Articles

Correlation between propagation loss and silicon dioxide film properties for surface acoustic wave devices

The correlation between the propagation loss and SiO2 film properties has been studied for temperature-compensated SAW devices using the SiO2/LiNbO3 structure. The SAW devices were prepared under different deposition temperatures for SiO2 film. Although they possessed excellent temperature coefficient of elasticity characteristics, devices prepared at lower temperature showed lower Q-factors. The SiO2 films were also deposited on a Si substrate under the same deposition conditions used for the SAW device preparation. Optical characterization was performed with Fourier transform infrared spectroscopy (FT-IR), spectrometer measurement, and Raman spectroscopy. IR absorbance spectra were almost same in the FT-IR measurement. However, optical attenuation in the UV region decreased with the deposition temperature in the spectrometer measurement. The optical attenuation is caused by the increase of the extinction coefficient in the SiO2 layer, and its optical wavelength dependence indicated that observed excess attenuation is caused by Rayleigh scattering. The Raman scattering also decreased with the deposition temperature in the Raman spectroscopy. The scattering is caused by the distortion of the SiO2 network. These results indicate that the Rayleigh scattering caused by the distortion of the SiO2 network is the main contributor to the excess SAW propagation loss in this case.

Study of the acoustoelectric effect for SAW sensors

Research has recently begun on the use of ultrathin films and nanoclusters as mechanisms for sensing of gases, liquids, etc., because the basic material parameters may change because of film morphology. As films of various materials are applied to the surface of SAW devices for sensors, the conductivity of the films may have a strong acoustoelectric effect, whether desired or not. The purpose of this paper is to reexamine the theory and predictions of the acoustoelectric effect for SAW interactions with thin conducting or semi-conducting films. The paper will summarize the theory and predict the effects of thin film conductivity on SAW velocity and propagation loss versus frequency and substrate material. The theory predicts regions of conductivity which result in extremely high propagation loss, and which also correspond to the mid-point between the open and short-circuit velocities. As an example of the verification and possible usefulness of the acoustoelectric effect, recent experimental results of palladium (Pd) thin films on a YZ LiNbO3 SAW delay line have shown large changes in propagation loss, depending on the Pd film thickness, exposure to hydrogen gas, or both. By proper design, a sensitive hydrogen leak detector SAW sensor can be designed.

1P5-11 Variation of SAW velocity and propagation loss by grain boundaries(Poster Session)

1P5-11 Variation of SAW velocity and propagation loss by grain boundaries(Poster Session)

Photoconductivity study of semiconductors using the surface acoustic wave convolver

Photoconductivity study of a semiconductor using the SAW convolver is presented. The semiconductor is placed either on or a small distance above the SAW delay line. A fast rise time pulse of light is applied to the semiconductor surface through the piezoelectric substrate, and the resulting change in the semiconductor conductance is observed by the relaxation of the SAW propagation loss. This technique has the important advantage that no ohmic contact to the semiconductor is needed.