Sapphire Amplifier Research Articles

Design of a broadband Si3N4 waveguide amplifier based on a gain medium of ion-sliced titanium-doped sapphire.

In recent years, significant progress has been made in the on-chip integration of Ti:sapphire amplifiers and lasers, showing great potential in device miniaturization, cost reduction, and mass production. However, the further integration of such devices on standard CMOS platforms has been challenging due to its limits on the wafer bonding method between gain materials and substrates. Here, we present a novel, to the best of our knowledge, Si3N4 on-chip broadband optical waveguide amplifier scheme with an ultra-wide bandwidth of 650-900 nm and a peak gain of 28 dB based on an ion-sliced Ti:sapphire platform. The difficulty of heterogeneous integration is significantly reduced by growing Si3N4 thin films on Ti:sapphire. Moreover, by using homogeneous bonding combined with ion slicing technology, the target thickness of Ti:sapphire is expected to be easily controlled to less than 1 µm, greatly reducing the device volume and improving its practicality. Through subsequent experimental optimization, this work is expected to provide a new approach for the optimized design and experimental realization of on-chip Ti:sapphire waveguide amplifiers and lasers.

Structural and ultrafast third-order nonlinearities of methyl and methoxy substituted anthracene chalcones: Z-scan, four-wave mixing, and DFT approaches

We report on the structural, thermal, linear, and ultrafast third-order nonlinear optical (NLO) properties of two novel anthracene chalcones: (2E)-1-(anthracen-9-yl)-3-(5-methylthiophen-2-yl)prop-2-en-1-one (5ML2SANC) and (2E)-1-(9-anthryl)-3-(2,4,5-trimethoxyphenyl)prop-2-en-1-one (245TMANC). The chalcones were synthesized by Claisen-Schmidt condensation reaction, and the single crystals were grown by the solvent evaporation method. The molecular structure was confirmed by FTIR and NMR spectroscopy, while the crystal structure was determined using the single crystal XRD. Both crystals belong to centrosymmetric monoclinic crystal system with space group P21/n. The Hirshfeld surface was analyzed to understand intermolecular interactions, and the band structures - including HOMO-LUMO levels, excited state energies, GCRDs and MEPs-were studied using DFT. The ultrafast third-order NLO properties were investigated by Z-scan and degenerate four-wave mixing (DFWM) techniques using Ti: Sapphire amplifier laser delivering ∼50 fs pulses at 800 nm (1 kHz, ∼4 mJ, 2 W). Two-photon absorption, positive nonlinear refraction, optical limiting and optical switching behaviors were observed by Z-scan measurements. The time-resolved DFWM show that the decay time of 5ML2SANC is ∼127 fs, while for 245TMANC it is ∼142 fs. The second hyperpolarizability (γ) measured by Z-scan, DFWM and the estimations from the DFT theory are found to be in good agreement (∼10−34 esu). The ultrafast optical response, significant NLO properties and thermal stability of the synthesized chalcones demonstrate their potential suitability in optical limiting and switching applications.

Thermal lensing and small signal gain measurements in a pulsed blue diode pumped Ti:sapphire amplifier at room temperature.

Ultra short pulse Ti:sapphire lasers, crucial for most demanding applications, have traditionally been complex and costly due to their pump sources. GaN-based laser diodes offer new prospects for pumping, yet challenges persist in achieving sufficient Ti:sapphire output power and beam quality. We introduce what we believe to be a novel approach using pulsed blue laser diode pumping of a Ti:sapphire amplifier. Experimental setups with free-space output and fiber-delivered laser diodes are used to measure small signal gain (SSG) and thermal lensing. Results show the potential of fiber-delivered blue laser diodes, achieving an SSG >33% with reduced thermal load, paving the way for compact and low cost blue laser diode-pumped Ti:sapphire amplifiers at room temperature.

Time- and angle-resolved photoemission spectroscopy with wavelength-tunable pump and extreme ultraviolet probe enabled by twin synchronized amplifiers.

We describe a setup for time- and angle-resolved photoemission spectroscopy with wavelength-tunable excitation and an extreme ultraviolet probe. It is enabled by using the 10kHz twin Ti:sapphire amplifiers seeded by the common Ti:sapphire oscillator. The typical probe energy is 21.7eV, and the wavelength of the pump excitation is tuned between 2400 and 1200nm by using the optical parametric amplifier. The spectral width of the extreme ultraviolet probe is 53meV, and the time resolution is dependent on the wavelength for the pump, better than 60fs for the pump energy >0.7eV. This system enables the pump energy to be matched with a specific interband transition and to probe a wider energy-momentum space. We present the results for the prototypical materials of highly oriented pyrolytic graphite and Bi2Se3 to show the performance of our system.

Delay-shift and asymmetric broadening of pre-pulses by post-pulses in a petawatt laser facility.

The temporal contrast of high-peak-power lasers is usually limited by pre-pulses, which are generally produced by post-pulses due to the nonlinearity of the active medium. The reason for the conversion between pre-pulse and post-pulse is now well known, but the mechanisms for the delay-shift and asymmetric broadening of the newly generated pre-pulse are not yet clear. In this work, a novel, to the best of our knowledge, numerical model combining the nonlinear Schrödinger equation and the Frantz-Nodvik equation is proposed to investigate the underlying mechanisms for the "distortion" of the pre-pulse. Numerical results show that the gain characteristics of Ti:sapphire amplifiers can only make a minor change on the temporal profile of the pre-pulse, but the high-order dispersion is the main cause for the delay-shift and asymmetric broadening of the pre-pulse, and the effects are more significant for the initial post-pulse with a relatively larger delay.

Adding a second AgGaS2 stage to Ti:sapphire/BBO/AgGaS2 setups increases mid-infrared power twofold.

We present a method for increasing the power of mid-infrared laser pulses generated by a conventional beta-barium borate (BBO) optical parametric amplifier (OPA) and AgGaS2 difference frequency generation (DFG) pumped by a Ti:sapphire amplifier. The method involves an additional stage of parametric amplification with a second AgGaS2 crystal pumped by selected outputs of the conventional DFG stage. This method does not require additional pump power from the Ti:sapphire laser source and improves the overall photon conversion efficiency for generating mid-infrared light. It merely requires an additional AgGaS2 crystal and dichroic mirrors. Following difference frequency generation, the method reuses near-infrared light (∼1.9 µm), typically discarded, to pump the additional AgGaS2 stage and amplifies the mid-infrared light twofold. We demonstrate and characterize the power, spectrum, duration, and noise of the mid-IR pulses before and after the second AgGaS2 stage. We observe small changes in center frequencies, bandwidth, and pulse duration for ∼150-fs pulses between 4 and 5 µm.

Effect of the annealing temperature on structural, morphological, and nonlinear optical properties of TeO2 thin films used for efficient THz generation.

This paper reports the effect of annealing on T e O 2 films deposited using the thermal evaporation technique. T e O 2 films of 120 nm thickness were grown on a glass substrate at room temperature (RT) and annealed at 400°C and 450°C. The structure of the film and the influence of the annealing temperature on the crystalline phase change were examined using the X-ray diffraction method. Optical properties such as transmittance, absorbance, complex refractive index, and energy bandgap were determined between ultraviolet-visible to terahertz (THz) range. These films have a direct allowed transition with the optical energy bandgap of 3.66, 3.64, and 3.54 eV at as-deposited temperatures (RTs) of 400°C and 450°C. The effect of the annealing temperature on the morphology and surface roughness of the films was investigated using atomic force microscopy. The nonlinear optical parameters, which are the refractive index and absorption coefficients, were calculated using THz time domain spectroscopy. The microstructure variation of the T e O 2 films in terms of surface orientation plays an important role in understanding the change in the nonlinear optical properties of the films. Finally, these films were subjected to 800 nm wavelength of 50 fs pulse duration obtained from a Ti:sapphire amplifier at a 1 kHz repetition rate for efficient THz generation. The power of incidence of the laser beam was tuned at a range between 75 and 105 mW; the highest power of the generated THz signal was of the order of 210 nW for 450°C annealed film with respect to the incident power of 105 mW. The conversion efficiency was found to be ∼0.22×10-5 %, which is 2.025 times more than the film annealed at 400°C.

Comparative studies of terahertz-based optical properties in transmission/reflection modes of GaSe: S and measurement of its scattering losses due to surface roughness for efficient terahertz generation

The paper reports the efficient terahertz generation using nonlinear optical rectification process and comparative studies of optical, dielectric, and surface scattering properties of 1.0 mm thin GaSe: S crystal in transmission/reflection modes. We employed 800 nm wavelength of 140 fs and 50 fs pulse durations obtained from Ti: Sapphire oscillator and amplifier systems at 80 MHz and 1 kHz repetition rates, respectively, and evaluated the THz generation potential and optical properties such as refractive index, absorption coefficients, relative permittivity in transmission mode. In the next step, the crystal was subjected to a commercial THz system of 0.3 picosecond pulses at 100 MHz repetition rate in reflection geometry and once again recorded the similar parameters and compared with the transmission mode data. In addition, these data were used to measure the scattering losses from the surface of the crystal in terms of surface roughness, optical impedance, and Fresnel’s reflection coefficients. The maximum generated THz power was of the order of 4.5 μW with conversion efficiency (η) ∼ 2.2 × 10−3%. The measured THz efficiency was found equivalent to 20 mm thick GaSe crystal used in the difference frequency mixing technique. Finally, we have measured the Rayleigh roughness factor (g) of the crystal surface at different THz frequencies. When g < 1 (for small roughness) the Fresnel reflection loss factor becomes 0.75 at 1.4 THz frequency range which helps to enhance the generated signal.

Ultrafast Continuum IR Generation and Its Application in IR Spectroscopy

The spectral range of femtosecond time-resolved infrared spectroscopy is limited by the bandwidth of mid-IR pulses (100~400 cm-1) generated from the combination of Ti:Sapphire amplifier, Optical Parametric Amplifier (OPA), and Difference Frequency Generation (DFG). To overcome this limitation, we implement a compact continuum mid-IR source producing ultrafast pulses that span the frequency range from 1000 to 4200 cm-1 (from 10 to 2.4 μm), which utilize the mixing of fundamental, second-harmonic, and third-harmonic of 800 nm pulse in the air. After building an IR spectrometer with continuum IR and a monochromator, we found that the distortion of the measured IR spectrum originated from the contamination of higher-order diffraction. We used bandpass filters to eliminate the higher-order contributions and correct the measured IR spectrum. We further characterized the spectral properties of fundamental, second-harmonic, and third-harmonic fields after the plasmonic filamentation process, which helps to improve the efficiency of the continuum IR generation. Using the generated continuum IR pulses, we measured the IR absorption spectrum of a water-benzonitrile mixture, which was found to be consistent with the spectrum obtained with a commercial FT-IR spectrometer. The present work will be useful for the efficient generation of continuum IR pulses for IR pump-probe and two-dimensional IR spectroscopy experiments in the future.

Demonstration of a side-pumped cross-seeded thin-slab pre-amplifier for high-power Ti:Sa laser systems

We demonstrate a room-temperature Ti:Sapphire (Ti:Sa) amplifier that uses a cross pump-seed geometry (cross-thin-slab) to generate 30-mJ output pulses at 0.5-kHz repetition rate, and 25 mJ at 1 kHz when pumped by 100-mJ, 515-nm pulses from a diode-pumped Yb:YAG laser. The geometry allows to maintain a crystal temperature of ∼30°C using cooling water at 10°C. The amplifier is an attractive solution for use in the first stages of amplification in high peak and high average power chirped pulse amplification laser systems.

Femto Seconds Laser Based Efficient THz Generation from Different Temperature Annealed CdTe Thin Films and Effects of Carrier Concentration and Phase Transition on Efficiency of Generation

The paper reports the thermal evaporation based growth process of CdTe thin films on glass substrates. These films were annealed between room temperature to 200, 300 and 400 oC, respectively. The XRD characterization of these films revealed the change in crystalline phase from cubic to triclinic above 200 oC. Finally, these films were subjected to 800 nm wavelength of 35fs pulsed obtained from Ti: sapphire amplifier at 1kHz repetition rate. The incident power of the laser was focused and tuned between 150-350 mW range and generated THz signals were recorded using calibrated Pyroelectric detector at 22.5 Hz frequency. The highest power of the THz signal was 80nW for 200 oC annealed film with respect to incident power of 300mW. The highest efficiency of THz signal was of the order of 3.11E-5%. We have also explained the effect of carrier concentration and phase transition with respect to different annealed temperature for efficient generation of THz signal.

8 fs laser pulses from a compact gas-filled multi-pass cell.

Compression of 42 fs, 0.29 mJ pulses from a Ti:Sapphire amplifier down to 8 fs (approximately 3 optical cycles) is demonstrated by means of spectral broadening in a compact multi-pass cell filled with argon. The efficiency of the nonlinear pulse compression is limited to 45 % mostly by losses in the mirrors of the cell. The experimental results are supported by 3-dimensional numerical simulations of the nonlinear pulse propagation in the cell that allow us to study spatio-spectral properties of the pulses after spectral broadening.

A Self-Diffraction Temporal Filter for Contrast Enhancement in Femtosecond Ultra-High Intensity LaserSupported by the National Natural Science Foundation of China (Grant Nos. 11774410 and 91850209), and the Strategic Priority Research Program of CAS (Grant No. XDB16030200).

We demonstrated a nonlinear temporal filter based on the self-diffraction (SD) process. Temporal contrast enhancement, angular dispersion and spectrum broadening properties of the SD process are investigated in experiment and simulation. Driven by spectral phase well compensated laser pulses with bandwidth of 28 nm, the filter produced clean pulses with a temporal contrast higher than 1010 and excellent spatial profile, the spectrum of which was smoothed and broadened to 64 nm. After implementing this filter into a home-made 30 TW Ti:sapphire amplifier, temporal contrast of the amplified pulses was enhanced to 1010 within the time scale of –400 ps.

Frequency-doubled Nd:YAG MOPA laser system with programmable rectangular pulses up to 200 microseconds

A compact frequency-doubled diode-pumped Nd:YAG master-oscillator power-amplifier laser system with programmable microsecond pulse length has been developed. Analog pulse shaping of the output from a single-frequency continuous-wave Nd:YAG oscillator, and subsequent amplification, allowed the generation of rectangular pulses with pulse lengths on the order of the Nd:YAG fluorescence lifetime. Temporally flat-top pulses of 1064 nm light with 520 mJ pulse energy, 2.6 kW peak power, and 200 μs duration, with linewidth below 10 kHz, were obtained at a repetition rate of 2 Hz. Second harmonic generation in a LBO crystal yielded pulses of 262 mJ and 1.3 kW peak power at 532 nm. The peak power can be maintained within 2.9% over the duration of the laser pulse, and long-term intensity stability of 1.1% was observed. The spatially flat-top beam at 1064 nm used in the amplifier is converted to a Gaussian beam at 532 nm with beam quality factor M2 = 1.41(14) during the second harmonic generation. This system has potential as a pump source for Ti:sapphire, dye, or optical parametric amplifiers to generate tunable high-power single-frequency radiation for applications in precision measurements and laser slowing.

High-field THz pulses from a GaAs photoconductive emitter for non-linear THz studies.

We report the emission of high-field terahertz pulses from a GaAs large-area photoconductive emitter pumped with a Ti:Sapphire amplifier laser system at 800 nm wavelength and 1 kHz repetition rate. The maximum estimated terahertz electric field at the focus is ≳230 kV/cm. We also demonstrate the capability of the terahertz field to cause a non-linear effect, which usually requires high-field terahertz pulses generated through optical rectification or an air plasma. A significant drop in the optical conductivity of optically pumped GaAs due to Γ-L inter-valley scattering of free electrons caused by the strong THz field is found.

Suppressing the spectral gain-narrowing effect of high-gain Ti:Sapphire amplifiers by a novel polarization-encoded filter

A spectral pre-compensation method based on a novel polarization-encoded filter (PEF) with a single-pass configuration is proposed and investigated, which can support a broadband amplification in a high-gain Ti:Sapphire amplifier. The spectral filtering effect is realized by adopting cascaded half-wave plate, quarter-wave plate, quartz crystal and thin film polarizer in this novel filter. Jones calculus is used for theoretically analyzing the characteristics of the PEF. The theoretical analysis demonstrates the advantages of using the cascaded wave plates in the PEF. In the proof-of-principle experiment, we can observe that the use of a single-pass PEF before a high gain (>106) Ti:sapphire (Ti:Sa) regenerative amplifier (RA) can effectively suppress the spectral gain-narrowing effect. The full width at half maximum (FWHM) bandwidth of the amplified pulse increases from 16 nm to 43 nm, and the full bandwidth increases from 73 nm to 90 nm, respectively. After compression, the pulse duration is measured to be 26.9 fs. The PEF provides a practical and effective solution of suppressing the spectral gain-narrowing effect in high gain Ti:sapphire amplifiers.

Bulk, cascaded pulse compression scheme and its application to spin emitter characterization

The 35-fs-long pulses of a commercial Ti:sapphire amplifier are compressed to ∼20fs via self-phase modulation in bulk glass substrates. The cascading of both nonlinear broadening and dispersion compensation stages makes use of the increasing peak power in the successive nonlinear stages. As an application example, the compressed pulses are used for electro-optical sampling of terahertz waves created by optically pumped thin-film spin emitters.

Demonstration of joule-level chirped pulse amplification based on tiled Ti:sapphire amplifier

A novel tiled Ti:sapphire (Ti:S) amplifier was experimentally demonstrated with >1 J amplified chirped pulse output. Two Ti:S crystals having dimensions of 14 mm× 14 mm× 25 mm were tiled as the gain medium in a four-pass amplifier. Maximum output energy of 1.18 J was obtained with 2.75 J pump energy. The energy conversion efficiency of the tiled Ti:S amplifier was comparable with a single Ti:S amplifier. The laser pulse having the maximum peak power of 28 TW was obtained after the compressor. Moreover, the influence of the beam gap on the far field was discussed. This novel tiled Ti:S amplifier technique can provide a potential way for 100 PW or EW lasers in the future.

Method for developing a sub-10 fs ultrafast electron diffraction technology.

The experimental observation of femtosecond dynamics in atoms and molecules by stroboscopic technologies utilizing x ray or electron flashes has attracted much attention and has rapidly developed. We propose a feasible ultrafast electron diffraction (UED) technology with high brightness and a sub-10 fs temporal resolution. We previously demonstrated a UED system with an overall temporal resolution of 31 fs by using an RF photoelectron gun and a 90° achromatic bending structure. This UED structure enabled a bunch duration of 25 fs and a low timing jitter of less than 10 fs while maintaining a high bunch charge of 0.6 pC. In this paper, we demonstrate a simple way to further compress the electron bunch duration to sub-10 fs based on installing an energy filter in the dispersion section of the achromatic bend. The energy filter removes the electrons belonging to nonlinear parts of the phase space. Through numerical simulations, we demonstrate that the electron bunches can be compressed, at the sample position, to a 6.2 fs (rms) duration for a 100 fC charge. This result suggests that the energy filtering approach is more viable and effective than complicated beam-shaping techniques that commonly handle the nonlinear distribution of the electron beam. Furthermore, a gas-filled hollow core fiber compressor and a Ti:sapphire amplifier are used to implement pump laser pulses of less than 5 fs (rms). Thus, we could present the full simulation results of a sub-10 fs UED, and we believe that it will be one of the technical prototypes to challenge the sub-fs time resolution.

High-energy hybrid femtosecond laser system demonstrating 2 × 10 PW capability

Abstract We report on a two-arm hybrid high-power laser system (HPLS) able to deliver 2 × 10 PW femtosecond pulses, developed at the Bucharest-Magurele Extreme Light Infrastructure Nuclear Physics (ELI-NP) Facility. A hybrid front-end (FE) based on a Ti:sapphire chirped pulse amplifier and a picosecond optical parametric chirped pulse amplifier based on beta barium borate (BBO) crystals, with a cross-polarized wave (XPW) filter in between, has been developed. It delivers 10 mJ laser pulses, at 10 Hz repetition rate, with more than 70 nm spectral bandwidth and high-intensity contrast, in the range of 1013:1. The high-energy Ti:sapphire amplifier stages of both arms were seeded from this common FE. The final high-energy amplifier, equipped with a 200 mm diameter Ti:sapphire crystal, has been pumped by six 100 J nanosecond frequency doubled Nd:glass lasers, at 1 pulse/min repetition rate. More than 300 J output pulse energy has been obtained by pumping with only 80% of the whole 600 J available pump energy. The compressor has a transmission efficiency of 74% and an output pulse duration of 22.7 fs was measured, thus demonstrating that the dual-arm HPLS has the capacity to generate 10 PW peak power femtosecond pulses. The reported results represent the cornerstone of the ELI-NP 2 × 10 PW femtosecond laser facility, devoted to fundamental and applied nuclear physics research.