Transmission Electron Microscopy Sample Research Articles

Evaluation of degradation phenomena in the electric potential distribution inside organic light-emitting diodes by electron holography

Understanding the intrinsic degradation processes of organic light-emitting diodes is necessary to improve their lifetimes. This intrinsic degradation is typically caused by carrier injection at the interface between the hole transport layer (HTL) and the emissive layer (EML). However, revealing the charge behavior in this local region with a high spatial resolution remains challenging. Thus, this study employed electron holography, a transmission electron microscopy (TEM) technique, to measure the nanometer scale potential distribution inside an OLED composed of N,N′-di-[(1-naphthyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine (α-NPD) and tris-(8-hydroxyquinoline)aluminum (Alq3) that was degraded via continuous voltage application. The α-NPD and Alq3 functioned as the HTL and EML, respectively. The degraded OLED was found to exhibit several potential distributions, depending on the local positions from which the TEM samples were lifted out of the same bulk sample. The distributions included (i) formation of a potential valley at the α-NPD/Alq3 interface, (ii) disappearance of electric fields within the organic layers, and (iii) similar distribution to original before degradation. We suggest that the degradation was caused by charge accumulation, cationization of Alq3, and local failures. Thus, this study revealed the influence of electric degradation at the nanometer scale because of charge injection to the α-NPD/Alq3 interface. Electron holographic degradation analysis near the HTL/EML interface is expected to aid in the development of design guidelines for preventing device degradation and thus extend device lifetime.

Transmission Electron Microscopy of Coral Tissue.

Coral reefs are invaluable ecosystems that are under threat from various anthropogenic stressors. There has been a recent increase in the diagnostic tools utilized to understand how these threats impact coral reef health. Unfortunately, the application of diagnostic tools like transmission electron microscopy (TEM) is not as standardized or developed in coral research as in other research fields. Utilizing TEM in conjunction with other diagnostic methods can aid in understanding the impact of these stressors on the cellular level because TEM offers valuable insight into the structures and microsymbionts associated with coral tissue that cannot be obtained with a conventional light microscope. Additionally, a significant amount of coral tissue ultrastructure has not yet been extensively described, causing a considerable gap in our understanding of cellular structures that could relate to the immune response, cellular function, or symbioses. Moreover, additional standardization is needed for TEM in coral research to increase comparability and reproducibility of findings across studies. Here, we present standardized TEM sample fixation, embedding, and sectioning techniques for coral studies that ensure consistent ultrastructural preservation and minimize artifacts, enhancing the reliability and accuracy of TEM observations. We also demonstrate that these TEM protocols allow for the observation and quantification of bacterial and viral-like particles within the coral tissue as well as the endosymbiotic microalgae, potentially providing insight into their interactions within coral cells and how they relate to overall coral health and resilience. © 2024 The Author(s). Current Protocols published by Wiley Periodicals LLC. Basic Protocol 1: Primary fixation Basic Protocol 2: Decalcification Basic Protocol 3: Sample dissection, secondary fixation, dehydration, and embedding Basic Protocol 4: Sectioning and grid staining Basic Protocol 5: Imaging.

Characterization of Fe-Cr alloys irradiated by neutrons at intermediate temperature

A series of Fe-Cr alloys, with 3 at.% - 18 at.% Cr, was irradiated in the Advanced Test Reactor (ATR) at the Idaho National Labs (INL), USA, up to a dose of ∼6.7 dpa at a temperature of ∼456 °C. Transmission electron microscopy (TEM) samples were extracted using a focused ion beam (FIB) instrument, and the resulting microstructural defects, such as voids, dislocation loops, network dislocations, Cr rich precipitates, etc., were characterized using a TEM. It was found that the size and number density of these defects varied widely over the different alloys with varying Cr content. As expected, there were no Cr rich precipitates in samples with Cr up to 9 %, and they started appearing only in samples with 12 at.% Cr and above. The particle size decreased from about 15 nm at 12 % Cr to 8 nm at 18 % Cr, while the number density increased from ∼7e20 /m3 to 6e22 /m3 for the same Cr contents. Grain boundary segregation of Cr, along with a precipitate free zone, was observed in the cases where a boundary was present in the sample. Large voids (>1–2 nm) were almost invisible in the Fe-3at.%Cr sample, while the average void size remained almost constant between 15 and 18 nm for samples with 6–15 at.% Cr and increased slightly at 18 at.% Cr to ∼22 nm. Fe-3 %Cr showed a high density of small voids(<2 nm), estimated to be about 1e23/m3. The number density of large voids increased from ∼0 at 3 % Cr to a peak of ∼6.4e20 /m3 at 12 % Cr, then decreased to about 1.1e20 /m3 at 18 % Cr. The dislocation loops, which appeared in linear arrays in the Fe-9 %Cr sample, were analysed in detail using both invisibility criteria and image simulations using the Oxford University TEMACI software, and it was found that they are most likely to be ½ 〈111〉 type loops on {100} planes. These loops seem shaped like sections of helices in some places and are most likely formed by loops near screw dislocations climbing into a helix and then collapsing into a loop array. Similar dislocation analysis was performed in the other samples as well wherever feasible, and it was found that there is a mixture of ½ 〈111〉 and [100] dislocation loops.

Influence of Initial Film Properties in UVO-Mediated Patterning of an Elastomeric Film Using a TEM Grid.

Ultraviolet irradiation of a cross-linked polydimethylsiloxane (PDMS) Sylgard 184 film in the presence of atmospheric oxygen (UVO) through a bare transmission electron microscope (TEM) sample holding grid is a rather simple and widely utilized technique for creating micropatterned surfaces. The surface oxidation of a Sylgard 184 film due to UVO exposure is associated with densification and the formation of a silica-like surface layer, which under a TEM grid happens only over the exposed areas of the film, resulting in a physicochemical pattern. It is known that the depth (hD) of the features depends on the duration of UVO exposure (tE). In this article, we show for the first time that hD also depends on the initial film thickness (hF) and the cross-linker percentage (CL, ratio of part A to part B) in a Sylgard 184 thin film. We show that for a specific tE, hD progressively decreases with the reduction in hF. On the other hand, hD shows a nonmonotonic dependence with CL, resulting in patterns with maximum depth for CL ≈ 10.0%. We attribute this observation to the combined effect of resistance against the penetration of the propagation front by the rigid substrate as well as stress relaxation within the exposed parts of the film below the propagating front in films with higher CL values leading to the variation of hD. The observation reported here would allow the potential fabrication of polymer films with physicochemical patterns with feature height on demand by a one-step, facile technique.

Artifact-free sample preparation of metal thin films using Xe plasma-focused ion beam milling for atomic resolution and in situ biasing analyses

The focused ion beam (FIB) technique using Ga ion beams is generally employed for transmission electron microscopy (TEM) sampling owing to its location-specific beam controllability on materials. However, Ga ion beam bombardment-induced damage hinders reliable structural analysis. Furthermore, Ga ions implanted in the damaged surface layer substantially lower the chemical stability of the samples, such as metal thin films. Here, aiming for atomic-level interface structural analysis, we propose a useful approach for the TEM sample preparation of heteroepitaxial Ag/Cu metal films without physical damage or chemical instabilities using the Xe plasma FIB (PFIB) system. Xe plasma-assisted sampling ensured that the interface structure of the Ag/Cu metal film remained intact; in contrast, the sample prepared using the focused Ga ion beam was damaged by elemental mixing. Furthermore, the sample prepared by Xe plasma milling exhibited robust structural stability over time after exposure to air in contrast to the sample prepared by Ga-ion milling, which induced structural decomposition owing to oxidation. In addition to the static structural analysis, the Cu thin film sample prepared by Xe PFIB exclusively exhibited pristine structural properties under in situ electrical biasing experiments, thus confirming the feasibility of conducting a fundamental study of Cu electromigration without artifacts.

Optimized EBSD-TEM method for the investigation of Al/Al2O3 interfacial orientation mismatch

The combined electron backscattered diffraction (EBSD) and transmission electron microscopy (TEM) method has been commonly applied to investigate material interfaces, from the perspectives of orientation and atomic structure. However, the loose combination is inadequate to capture some slight deviation from the ideal mismatch of interface, which limits an in-depth understanding of the interface. In this study, the combined EBSD-TEM method was systematically optimized and applied to investigate Al-Al2O3 heterogeneous nucleation interface. In this optimized EBSD-TEM method, the cylindrical equidistant projection was employed to illustrate the orientation mismatch relationship instead of the widely used pole figure. Lattice planes and directions from two phases are systematically presented in one figure, which provides a thorough perspective to identify all the potential matching features within the interface, meanwhile ensures a precise guidance for TEM sampling and observation. Such guidance is crucial for interface investigations, thereby this optimized EBSD-TEM method has great potential to be widely applied. Complex interface configurations of Al-Al2O3 interfaces were revealed, including the tilting of Al phase low-indexed planes relative to the interface and the deviations of matched lattice direction pairs between two phases. The complex interface configurations urge further development in the theory of nucleation interface mismatch.

An Integrated Solution to FIB-Induced Hydride Artifacts in Pure Zirconium.

The preparation method of transmission electron microscopy (TEM) samples for pure zirconium was successfully executed using a focused ion beam (FIB) system. These samples unveiled artifact hydrides induced during the FIB sample preparation process, which resulted from stress damage, ion implantation, and ion irradiation. An innovative solution was proposed to effectively reduce the effect of artifact hydrides for FIB-prepared samples of hydrogen-sensitive materials, such as zirconium alloys. This development lays the groundwork for further research on the micro/nanostructures of zirconium alloys after ion irradiation, thereby facilitating the study of corrosion mechanisms and the prediction of service life for nuclear fuel cladding materials. Furthermore, the solution proposed in this study is also applicable to TEM sample preparation using FIB for other hydrogen-sensitive materials such as titanium, magnesium, and palladium.

Operando Liquid-cell Transmission Electron Microscope Sample Holder with Bulk Reference and Counter Electrodes for Electrocatalysis Applications

Operando Liquid-cell Transmission Electron Microscope Sample Holder with Bulk Reference and Counter Electrodes for Electrocatalysis Applications

Characterization of Mass, Diameter, Density, and Surface Properties of Colloidal Nanoparticles Enabled by Charge Detection Mass Spectrometry.

A variety of scattering-based, microscopy-based, and mobility-based methods are frequently used to probe the size distributions of colloidal nanoparticles with transmission electron microscopy (TEM) often considered to be the "gold standard". Charge detection mass spectrometry (CDMS) is an alternative method for nanoparticle characterization that can rapidly measure the mass and charge of individual nanoparticle ions with high accuracy. Two low polydispersity, ∼100 nm diameter nanoparticle size standards with different compositions (polymethyl methacrylate/polystyrene copolymer and 100% polystyrene) were characterized using both TEM and CDMS to explore the merits and complementary aspects of both methods. Mass and diameter distributions are rapidly obtained from CDMS measurements of thousands of individual ions of known spherical shape, requiring less time than TEM sample preparation and image analysis. TEM image-to-image variations resulted in a ∼1-2 nm range in the determined mean diameters whereas the CDMS mass precision of ∼1% in these experiments leads to a diameter uncertainty of just 0.3 nm. For the 100% polystyrene nanoparticles with known density, the CDMS and TEM particle diameter distributions were in excellent agreement. For the copolymer nanoparticles with unknown density, the diameter from TEM measurements combined with the mass from CDMS measurements enabled an accurate measurement of nanoparticle density. Differing extents of charging for the two nanoparticle standards measured by CDMS show that charging is sensitive to nanoparticle surface properties. A mixture of the two samples was separated based on their different extents of charging despite having overlapping mass distributions centered at 341.5 and 331.0 MDa.

Preparing Retinal Organoid Samples for Transmission Electron Microscopy.

Retinal organoids (ROs) are a three-dimensional culture system mimicking human retinal features that have differentiated from induced pluripotent stem cells (iPSCs) under specific conditions. Synapse development and maturation in ROs have been studied immunocytochemically and functionally. However, the direct evidence of the synaptic contact ultrastructure is limited, containing both special ribbon synapses and conventional chemical synapses. Transmission electron microscopy (TEM) is characterized by high resolution and a respectable history elucidating retinal development and synapse maturation in humans and various species. It is a powerful tool to explore synaptic structure in ROs and is widely used in the research field of ROs. Therefore, to better explore the structure of RO synaptic contacts at the nanoscale and obtain high-quality microscopic evidence, we developed a simple and repeatable method of RO TEM sample preparation. This paper describes the protocol, reagents used, and detailed steps, including RO fixation preparation, post fixation, embedding, and visualization.

Systematic study of FIB-induced damage for the high-quality TEM sample preparation

Nowadays, a focused Ga ion beam (FIB) with a scanning electron microscopy (SEM) system has been widely used to prepare the thin-foil sample for transmission electron microscopy (TEM) or scanning TEM (STEM) observation. An establishment of a solid strategy for a reproducible high-quality sample preparation process is essential to carry out high-quality (S)TEM analysis. In this work, the FIB damages introduced by Ga+ beam were investigated both experimentally and stopping and range of ions in matter (SRIM) simulation for silicon (Si), gallium nitride (GaN), indium phosphide (InP), and gallium arsenide (GaAs) semiconductors. It has been revealed that experimental investigations of the FIB-induced damage are in good agreement with SRIM simulation by defining the damage as not only “amorphization” but also “crystal distortion”. The systematic evaluation of FIB damages shown in this paper should be indispensable guidance for reliable (S)TEM sample preparation.

Microstructure Evolution and Fretting Wear Mechanisms of Steels Undergoing Oscillatory Sliding Contact in Dry Atmosphere.

Variations in the microstructure and the dominant fretting wear mechanisms of carbon steel alloy in oscillatory sliding contact against stainless steel in a dry atmosphere were evaluated by various mechanical testing and microanalytical methods. These included scanning electron microscopy and energy dispersive spectrometry with corresponding elemental maps of the wear tracks, in conjunction with cross-sectional transmission electron microscopy of samples prepared by focused ion beam machining to assess subsurface and through-thickness changes in microstructure, all as a function of applied load and sliding time. Heavily dislocated layered microstructures were observed below the wear tracks to vary with both the load and sliding time. During the accumulation of fretting cycles, the subsurface microstructure evolved into stable dislocation cells with cell walls aligned parallel to the surface and the sliding direction. The thickness of the damaged subsurface region increased with the load, consistent with the depth distribution of the maximum shear stress. The primary surface oxide evolved as Fe2O3 and Fe3O4 with increasing sliding time, leading to the formation of a uniform oxide scale at the sliding surface. It is possible that the development of the dislocation cell structure in the subsurface also enhanced oxidation by pipe diffusion along dislocation cores. The results of this study reveal complex phase changes affecting the wear resistance of steels undergoing fretting wear, which involve a synergy between oxidative wear, crack initiation, and crack growth along dislocation cell walls due to the high strains accumulating under high loads and/or prolonged surface sliding.

Size-dependent amorphization of cementite lamellae in a tribolayer

The deformation and structural evolution characteristics of cementite in tribolayers significantly impact the friction and wear properties of pearlitic steels. However, the mechanism and size dependency of cementite amorphization remain unclear. Herein, the focused ion beam (FIB) lift-out technique was used to prepare transmission electron microscopy (TEM) samples of tribolayers formed during dry sliding of pearlitic steel. The microstructure of and elemental distributions in the tribolayers were characterized. Furthermore, molecular dynamics (MD) simulations were employed to analyze the behavior of dislocation slip systems in ferrite that extended toward cementite and induced amorphization. The results indicated that cementite amorphization occurred prior to dissolution within the tribolayer. Dislocation slips at the phase interface resulted in C diffusion and cementite amorphization. The transformation of cementite was size dependent. Thin lamellae transformed into amorphous lamellae, while local deformation and shear bands formed in thick lamellae. These research findings could contribute to rational design of cementite and to control of its structural evolution behavior within a tribolayer, thereby enhancing the wear resistance of a material.

Enabling focused ion beam sample preparation for application in reverse tip sample scanning probe microscopy

Focused ion beam (FIB) has become a powerful tool for transmission electron microscopy sample preparation in the nanoelectronics industry and has in recent years also shown its benefits for specific preparation steps in electrical scanning probe microscopy (SPM). Most recently, a novel SPM approach – so-called reverse tip sample (RTS) SPM – has been proposed in which the position of sample and tip are switched compared to standard SPM; in RTS SPM the sample is attached to the end of a cantilever beam. To achieve this configuration, the region of interest must first be extracted from a substrate and then needs to be reliably fixed to the cantilever by FIB. Therefore, we have explored and developed dedicated FIB preparation methods for RTS SPM in this work. Our established procedures ensure a strong mechanical and good electrical connection of the sample to the cantilever for both cross-section and top view sample preparation. Furthermore, we introduce an approach for mounting samples from a full wafer size workflow. This paper presents the developed FIB procedures and discusses the quality and stability of all mounted samples and their electrical evaluation in RTS SPM.

Microstructure Study on Very High Cycle Fatigue of an Additively Manufactured Aluminium Alloy via Advanced Characterization Methods

The engineering application of additively manufactured (AM) metallic materials is quite limited by their fatigue behaviors, which are very inconsistent with that of conventionally wrought or cast ones. Here, based on advanced material characterization techniques, such as focused ion beam (FIB), scanning electron microscopy (SEM), and transmission electron microscopy (TEM), the microstructures underneath fracture surfaces were thoroughly investigated in an AM aluminum (AlSi10Mg) alloy with horizontal and vertical building orientation enduring very high cycle fatigue (VHCF) loading under the stress ratios R = −1, 0, and 0.5. Two VHCF failure specimens A and B were representatively selected to further examine SEM and TEM sample preparation via FIB milling. Specimen A was horizontally printed and failed at R = −1; specimen B was vertically printed and failed at R = 0. TEM samples A1 and B1 were lifted from locations near the crack initiation sites on the fracture surfaces of specimens A and B; The locations of TEM samples A2 and B2 kept away from the crack origin sites but still within the “fish-eye” region of crack steady growth. TEM observations show that there was no characteristic microstructure induced by VHCF in different oriented specimens and under various R values.

The characterisation of dental enamel using transmission Kikuchi diffraction in the scanning electron microscope combined with dynamic template matching

The remarkable physical properties of dental enamel can be largely attributed to the structure of the hydroxyapatite (HAp) crystallites on the sub-micrometre scale. Characterising the HAp microstructure is challenging, due to the nanoscale of individual crystallites and practical challenges associated with HAp examination using electron microscopy techniques. Conventional methods for enamel characterisation include imaging using transmission electron microscopy (TEM) or specialised beamline techniques, such as polarisation-dependent imaging contrast (PIC). These provide useful information at the necessary spatial resolution but are not able to measure the full crystallographic orientation of the HAp crystallites. Here we demonstrate the effectiveness of enamel analyses using transmission Kikuchi diffraction (TKD) in the scanning electron microscope, coupled with newly-developed pattern matching methods. The pattern matching approach, using dynamic template matching coupled with subsequent orientation refinement, enables robust indexing of even poor-quality TKD patterns, resulting in significantly improved data quality compared to conventional diffraction pattern indexing methods. The potential of this method for the analysis of nanocrystalline enamel structures is demonstrated by the characterisation of a human enamel TEM sample and the subsequent comparison of the results to high resolution TEM imaging. The TKD – pattern matching approach measures the full HAp crystallographic orientation enabling a quantitative measurement of not just the c-axis orientations, but also the extent of any rotation of the crystal lattice about the c-axis, between and within grains. Results presented here show how this additional information highlights potentially significant aspects of the HAp crystallite structure, including intra-crystallite distortion and the presence of multiple high angle boundaries between adjacent crystallites with rotations about the c-axis. These and other observations enable a more rigorous understanding of the relationship between HAp structures and the physical properties of dental enamel.

A simple coordinate transformation method for quickly locating the features of interest in TEM samples.

We developed a simple coordinate transformation method for quickly locating features of interest (FOIs) of samples in transmission electron microscope (TEM). The method is well suited for conducting sample searches in aberration-corrected scanning/transmission electron microscopes (S/TEM), where the survey can be very time-consuming because of the limited field of view imposed by the highly excited objective lens after fine-tuning the aberration correctors. For implementation, a digital image of the sample and the TEM holder was captured using a simple stereo-optical microscope. Naturally presented geometric patterns on the holder were referenced to construct a projective transformation between the electron and optical coordinate systems. The test results demonstrated that the method was accurate and required no electron microscope or specimen holder modifications. Additionally, it eliminated the need to mount the sample onto specific patterned TEM grids or deposit markers, resulting in universal applications for most TEM samples, holders and electron microscopes for fast FOI identification. Furthermore, we implemented the method into a Gatan script for graphical-user-interface-based step-by-step instructions. Through online communication, the script enabled real-time navigation and tracking of the motion of samples in TEM on enlarged optical images with a panoramic view.

An evaluation of Ar ion milling in TEM sample preparation by energy-filtered TEM technique

Irradiated materials impose unique challenges when it comes to sample preparation for transmission electron microscopy (TEM) analysis. After the preparation of TEM samples by electrolytic polish, Ar ion milling was usually used to remove the surface contamination, as well as to thin the samples to desired thickness. Therefore, it is necessary to evaluate the advantages and limitations of Ar ion milling technique. In this work, the optimum milling condition with minimal surface artifacts was determined by Ar ion milling with various incident angles and beam energies, and the high-resolution TEM (HR-TEM) examinations confirmed the optimum condition to be 4.0keV Ar ions with incident angles of ±4°. In addition, Ar ion milling and subsequent thickness measurement by energy-filtered TEM (EF-TEM) were conducted to determine the thinning rate. It is found that electrolytic polished TEM lamella has a wedge-shape structure with a very sharp edge, and the thinning rates varied from 9.7±1.4nm/minute to 5.0±2.3nm/minute across the TEM lamella for 4.0keV Ar ions. However, the thinning rates for 2keV and 1keV Ar ions were under the examination limit, and they were supposed not sufficient to thin the tungsten samples. Even though the exact thinning rate varies for different materials, the general trends for the Ar ion milling observed in this study can be used as a guidance.

Visualization of Engineered M13 Phages Bound to Bacterial Targets by Transmission Electron Microscopy.

The filamentous phage M13 is one of the most well-studied and characterized phages, particularly since it was introduced as a scaffold for phage display, a technique to express and evolve fusion proteins on the M13 phage's coat to study protein or peptide binding interactions. Since phages can be engineered or evolved to specifically bind to a variety of targets, engineered M13 phages have been explored for applications such as drug delivery, biosensing, and cancer therapy, among others. Specifically, with the rising challenge of antimicrobial resistance among bacteria, chimeric M13 phages have been explored both as detection and therapeutic agents due to the flexibility in tuning target specificity. Transmission electron microscopy (TEM) is a powerful tool enabling researchers to directly visualize and characterize binding of phages to bacterial surfaces. However, the filamentous phage structure poses a challenge for this technique, as the phages have similar morphology to bacterial structures such as pili. In order to differentiate between bacterial structures and the filamentous phages, here we describe a protocol to prepare TEM samples of engineered M13 phages bound to bacterial cells, in which the phage virions have been specifically labeled by decoration of the major capsid proteins with gold nanoparticles. This protocol enables clear visualization and unambiguous identification of attached filamentous phages within the context of bacterial cells expressing numerous pili.

Fabrication and Electrical Characterization of GaAs/GaN Junctions

GaAs/GaN heterojunctions are likely to be an ideal platform for high-frequency/high-output-power electron devices because of excellent electrical properties of GaAs and GaN as well as the similarity in their coefficients of thermal expansion. We have to note, however, that heteroepitaxial growth of GaAs/GaN junctions is quite difficult because of difference in crystal structures (in case of GaAs/wurtzite GaN junctions) and large mismatch in lattice constants (GaAs/zincblende GaN junctions). In this work we fabricate p+-GaAs/n-GaN heterojunctions by bonding GaAs and GaN epi wafers to each other using surface-activated-bonding technologies [1,2], selectively etching off the GaAs substrate used in the epitaxial growth, making ohmic contacts on the exposed surface of GaAs layer, and forming GaAs mesas. Ohmic contacts on the backside of GaN epi wafer are formed before bonding. The junctions are annealed at 400 ℃ in contact formation on GaAs surfaces. The temperature is much lower in comparison with the temperature in a wafer-fusion process of GaAs and GaN (750 ℃), which were reportedly applied for fabricating group-III arsenide/nitride heterojunction bipolar transistors [3]. Observation using cross sectional transmission electron microscope (TEM) of as-bonded and 400-℃ annealed GaAs/GaN interfaces shows that no voids are formed at the GaN/GaAs interfaces by the 400-℃ annealing. We also fabricate n+-GaAs/n-GaN heterojunctions for comparison.We measure the capacitance-voltage characteristics and current-voltage characteristics for reverse-bias voltages of the p+-GaAs/n-GaN and n+-GaAs/n-GaN junctions and find that the characteristics of the two junctions are close to each other, which suggests that the band profiles of GaN layers in the p+-GaAs/n-GaN and n+-GaAs/n-GaN junctions are almost the same, i.e., the Fermi-level pinning occurs at the GaAs/GaN interfaces. More importantly, the reverse-bias characteristics are measured up to -60 V. The reverse-bias voltage corresponds to an electric field of as high as ~2 MV/cm, which is comparable to the breakdown field of GaN (3-4 MV/cm) [4]. We also excite minority electrons in the p+-GaAs layer using a 488-nm Ar laser and successfully observe the photo current due to the transport of minority electrons across the reverse-biased GaAs/GaN interfaces.Acknowledgement: TEM samples were fabricated under the Inter-University Cooperative Research in IMR of Tohoku University. Epi wafers used in the work were provided from Sciocs (present Sumitomo Chemical) Co., Ltd.[1] H. Takagi, et al. Appl. Phys. Lett. 68, 2222 (1996). [2] S. Yamajo, et al., Jpn. J. Appl. Phys. 57, 02BE02 (2018). [3] C. Lian, et al. Appl. Phys. Lett. 91, 063502 (2007). [4] T. Maeda, et al., IEEE Electron Device Lett., 43, 96 (2022).