RF Sputtering Research Articles

Challenges and solutions in RF sputtering of superconducting Nb for nanostructuring processes

Challenges and solutions in RF sputtering of superconducting Nb for nanostructuring processes

Characterisation, comparison of surface topography and frictional resistance of zinc oxide- tin oxide nanocoated ceramic orthodontic brackets by radio frequency magnetron sputter coating method: An in vitro study

In recent years, orthodontic research has witnessed significant progress as it ventures into the exploration of nanoparticle coating to augment the surface properties of orthodontic appliances. The present study aimed to evaluate the surface characteristics, surface topography and frictional resistance (FR) of ceramic brackets (CB) nanocoated with zinc oxide- tin oxide (ZnO-SnO) by radio frequency magnetron sputter coating method.26 polycrystalline maxillary canine CB, split into two groups, were used in the current in vitro investigation. Group A of the RF magnetron sputter coating method was used to coat ZnO-SnO nanoparticles (Nps) on brackets, while group B of the process used uncoated brackets. Following coating, brackets underwent EDAX and SEM imaging. Atomic force microscopy (AFM) was used to assess the surface topography, and frictional resistance (FR) was also examined. An analysis of the data was conducted using SPSS (Version 23.0). An independent parametric t-test was used to compare the results between the groups.Brackets coated by RF sputter coating method had a porous and aggregated morphology when viewed under SEM. EDAX spectroscopy images showed uncoated brackets presented aluminium, oxygen, silica and calcium signal peaks at 60.83 wt %, 13.43 wt %, 24.57 wt % and 1.17 wt % respectively while the coated brackets showed signal peaks of zinc, oxygen, silica and tin at signal peaks of 20.98 wt %, 54.85 wt %, 10.52 wt % and 13.65 wt %. Groups A and B showed a surface roughness (SR) of 180.62 ± 9.49 nm and 316.77 ± 14.10. A statistically significant difference was observed in the SR between the 2 groups (p=0.00). The mean FR were higher for uncoated brackets (8.18 ± 0.76) p=0.00.Zn-SnO2 Nps were effectively coated onto ceramic brackets through the RF magnetron sputter coating technique. In comparison to uncoated brackets, the coated brackets exhibited a lower FR and SR.

Effect of annealing conditions on resistive switching in hafnium oxide-based MIM devices for low-power RRAM

Abstract This work presents resistive switching (RS) behaviour in HfO2-based low-power resistive random-access memory (RRAM) devices. A metal-insulator-metal (MIM) structure (Au/HfO2/Pt) was fabricated by sandwiching a thin insulating layer of HfO2 between Pt and Au electrodes. HfO2 films deposited by RF sputtering at room temperature were rapid thermally annealed in N2 ambient at 400 °C and 500 °C. Grazing angle x-ray diffraction (GIXRD), Field emission gun-scanning electron microscopy (FEG-SEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) were employed to analyse the phase, crystal structure, morphology, surface roughness and chemical composition of the HfO2 films. The bipolar RS could be observed in both as-deposited and annealed HfO2 film-based devices from I–V characteristics measured using a source meter. We have investigated the effect of annealing temperature and annealing ambient on the phase formation of HfO2 as well as the RS characteristics and compared with as-deposited film-based device. Annealed HfO2 film-based devices exhibited improved electrical characteristics, including stable and repeatable RS at significantly lower switching voltages (<1 V) which indicates low power consumption in these devices. The relatively lower processing temperature of the HfO2 films and that too in the films deposited by physical vapor deposition (PVD) technique-RF magnetron sputtering makes this study significantly useful for resistive switching based non-volatile memories.

Influence of Swift Heavy Ion Beam Irradiation on Optical, Structural, and Surface Morphological Properties of WO3 Thin Films Grown by RF Sputtering Method

Influence of Swift Heavy Ion Beam Irradiation on Optical, Structural, and Surface Morphological Properties of WO3 Thin Films Grown by RF Sputtering Method

Synergistic effect of indium doping on thermoelectric performance of cubic GeTe-based thin films

Germanium Telluride (GeTe) has been widely explored as a promising lead-free thermoelectric material in its rhombohedral and cubic phases. However, the structural transition between these two phases at ∼700 K causes an abrupt change of thermal expansion coefficient, challenging its broader practical applications. Also, as characterized by multi-valence bands and strong anharmonic interaction, the high-temperature cubic phase exhibits a higher power factor, lower thermal conductivity, and ultimately superior thermoelectric performance than its rhombohedral counterpart. Prompted by these, in this work, the cubic phase of Ge0.9Sb0.1Te (presented as GeSbTe in the following content) nanocrystalline thin film is successfully realized by RF sputtering followed by post-annealing treatment. Additionally, indium, as an electron donor to the germanium site and an effective scattering center, further moderates carrier concentration, enhances the Seebeck coefficient and reduces thermal conductivity. The optimal composition achieves an estimated peak zT of ∼1.95 and an estimated average zT of ∼1.11 within the temperature range of 300 K–575 K, showcasing GeTe as a compelling candidate for applications close to room temperature.

X-Ray Photoelectron Spectroscopy of TixAl and TixAl/A-Si:H Interlayer with Different Thicknesses on Stainless Steel to Enhancing Adhesion of DLC Films

In this research, two intermediate layers were deposited on 316L stainless steel to improve the adhesion of diamond-like carbon (DLC) films, one composed of TixAl and produced using the RF sputtering technique with three thicknesses, 100 nm, 200 nm, and 300 nm; the other, interlayer composed of amorphous hydrogenated silicon (a-Si:H). The DLC films were deposited using the pulsed-DC PECVD method with an active screen to achieve the AISI 316L/TixAl//DLC and AISI 316L/TiₓAl/a-Si/DLC configurations. The binding energy between the substrate/TixAl and TixAl/a-Si:H was investigated via X-ray photoelectron spectroscopy with high-resolution spectra. The chemical composition and microstructure of the titanium–aluminum interlayers were investigated using energy-dispersive X-ray spectroscopy and X-ray diffraction, and the microstructure of the DLC coatings was studied using Raman spectroscopy. The coatings’ adherence was measured using scratch and indentation tests, and the hardness of the DLC coatings was determined with the nanoindentation test. The X-ray diffractograms did not allow the determination of any crystalline structure in the TixAl interlayers. The XPS results showed that between the AISI 316L substrate and the TixAl intermediate layer, Ti-O-Fe and FeAl2O4 were formed. On the other hand, at the TixAl/a-Si:H interface, TiSi2 and Al2SiO5 compounds were identified. The DLC coatings grew as hydrogenated amorphous carbon with a hydrogen content of around 30 at.% and a hardness of 24 GPa. The deposition methods used and the TixAl/a-Si:H interlayers allowed the obtainment of adherent DLC coatings on AISI 316L stainless steel substrates. High critical load values of about 30 N were obtained. The novelty of this work is underscored by the absence of previous studies that thoroughly examine the bonds present in interlayers used as gradients to enhance the adhesion of DLC.

A comprehensive study of nonuniformity properties of the LiCoO2 thin-film cathode fabricated by RF sputtering

The influence of nonuniformity properties of the LiCoO2 cathode film deposited by magnetron sputtering on the capacity of all-solid-state thin-film lithium-ion batteries (ASSLib) was studied. It was found that the film nonuniformity corresponds to the magnetron plasma density distribution and the angular distribution of sputtered particles. The capacity distribution of the ASSLib with LiCoO2 cathode depending on the distance to the substrate center was studied. The maximum capacity corresponded to the dense part of the toroidal region of the magnetron plasma. It was determined that the main causes of batteries capacity decline in the central part and on the edge of the substrate are the impurity phase of lithium cobaltate and the smaller thickness of the cathode layer, respectively.

Effect of Deposition Temperature on Zn Interstitials and Oxygen Vacancies in RF-Sputtered ZnO Thin Films and Thin Film-Transistors.

ZnO thin films were deposited using RF sputtering by varying the argon:oxygen gas flow rates and substrate temperatures. Structural, optical and electrical characterization of ZnO thin films were systematically carried out using X-Ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy, X-Ray photoelectron spectroscopy (XPS) and Hall measurements. Film deposited at room temperature and annealed at 300 °C exhibited low O2 incorporation with localized defects and a high percentage of Zn interstitials. A large crystalline size and fewer grain boundaries resulted in a high Hall mobility of 46.09 cm2/V-s Deposition at higher substrate temperatures resulted in improvement in O2 incorporation through the annihilation of localized defects and decrease in oxygen vacancies and Zn interstitials. Urbach tails within the bandgap were identified using the absorption spectrum and compared with the % defects from XPS. Bottom-gate thin-film transistors were subsequently fabricated on a SiO2/p-Si substrate using the combination of RF sputtering, wet etching and photolithography. Variation in the substrate temperature showed performance enhancement in terms of the leakage current, threshold voltage, sub-threshold swing and ION/IOFF ratio. Thin-film transistor (TFT) devices deposited at 300 °C resulted in an O2-rich surface through chemisorption, which led to a reduction in the leakage current of up to 10-12 A and a 10-fold reduction in the sub-threshold swing (SS) from 30 V to 2.8 V. Further TFT optimization was carried out by reducing the ZnO thickness to 50 nm, which resulted in a field-effect mobility of 1.1 cm2/V-s and ION/IOFF ratio of 105.

Tailoring of magnetic phase: Co-doped SiC thin films grown by RF sputtering

In the present work, we investigate the influence of cobalt (Co) doping on the structural and magnetic properties of cobalt-doped silicon carbide (Co-SiC) thin films. The films were fabricated using DC/RF magnetron sputtering technique on Si (100) substrates at a temperature of 1200°C, with varying Co concentrations ranging from 5 to 16 at. (at%. X-ray diffraction (XRD) analysis unveiled the co-existence of CoSi2 and SiC phases in all the thin films. Surface morphological study through atomic force microscopy (AFM) revealed the densely packed nature of the films. Field emission scanning electron microscopy (FE-SEM) study showed that particles are uniformly distributed at the surface of the substrate. According to UV measurements, the films have high transmittance in the visible range, and as Co concentration rises, transmittance decreases. A magnetic phase transition from superparamagnetic to ferromagnetic behavior occurred with Co content surpassing 8 at% in the SiC thin films. Moreover, an increase in coercivity was observed from 38 Oe to 316 Oe as the doping concentration increased from 10 to 16 at%. This study represents an exploration into the induction of ferromagnetism through moderate Co doping in SiC thin films.

Analyzing the Surface Roughness and Corrosion Resistance of YSZ-Coated Grade V Titanium Alloy by RF Sputtering

Analyzing the Surface Roughness and Corrosion Resistance of YSZ-Coated Grade V Titanium Alloy by RF Sputtering

Fast-switching electrochromic smart windows based on WO3 doped NiO thin films

Nickel oxide (NiO) is a very promising material for the counter electrode in electrochromic devices (ECDs). In the current research, WO3 incorporated NiO thin films were fabricated via RF sputtering to enhance the electrochromic performance of NiO thin films. An XRD analysis revealed that the addition of WO3 to the cubic NiO thin film disrupts its long-range crystalline structure, resulting in an amorphous state. FESEM revealed the formation of columnar structure which favours ECDs. XPS analysis revealed that the addition of WO3 into NiO enhanced the hole concentration by creating nickel vacancies (nickel defects). Compared to pristine NiO, WO3 mixed NiO thin films showed enhanced optical modulation (66 %) with rapid switching speed (0.6 s/1.0 s for bleaching/colouring). This is mainly because the defect- induced amorphous structure of the nickel tungsten oxide thin film can provide large number of diffusion channels which facilitates the rapid ion intercalation process, and can accommodate large number of ions, and hence enhances the electrochromic performance. This advancement might have a substantial impact on the development of nickel tungsten oxide as a potential counter electrode in high-performance energy saving smart windows.

Enhancing solar cell productivity with MgAl2O4–ZnAl2O4 blended anti-reflection coatings

The enhancement of productivity in solar cells primarily relies on the application of anti-reflection coatings. The current research employs coating materials such as MgAl2O4, ZnAl2O4 and blended MgAl2O4–ZnAl2O4 as an anti-reflective layer on the monocrystalline Si solar cells by employing RF sputter coating method. Magnesium nitrate hexahydrate and aluminium nitrate nonahydrate were utilized for the synthesis of MgAl2O4 by the sol-gel technique. ZnAl2O4 was synthesized using zinc nitrate hexahydrate and aluminum nitrate nonahydrate by sol–gel procedure. The performance of coated photovoltaic cells was evaluated through different characterization techniques. From the optical study, the blended MgAl2O4-ZnAl2O4 coating shows the maximum absorbance of around 93 % and lowest reflectance of 9 %. The MgAl2O4–ZnAl2O4 blend achieves a maximum power conversion efficiency (PCE) of 22.12 % in a controlled light source and 19.21 % in direct sunlight. Compared to other solar cells, blended MgAl2O4–ZnAl2O4 demonstrates low resistivity (4.23 × 10−3 Ω-cm), high carrier concentration (35.81 × 1020 cm−3) and maximum hall mobility (12.96 cm2/Vs). From the surface temperature measurement, it is evident that the MgAl2O4–ZnAl2O4 blend coated solar cell exhibits lowest temperature of 38.2 °C under simulated light. The experimental results indicate that the blended MgAl2O4–ZnAl2O4 coated photovoltaic cells exhibits superior productivity than the various coated and uncoated solar cells. Therefore, it can be stated that MgAl2O4–ZnAl2O4 blends are the excellent antireflective materials for achieving desired PCE in solar photovoltaic cells.

Influence of power ramps on the physical properties of AZO thin films deposited at room temperature by RF magnetron sputtering technique

Abstract Aluminum-doped zinc oxide (AZO) thin films were deposited on glass substrates at room temperature by RF sputtering technique. Power ramps between 125 and 105 W were applied with a step of 4 W by intervals of 15, 7.5 and 1.8 min, for 180 min at 1.60 Pa. In this study, we investigated the structural, morphological, electrical, and optical properties of AZO films. X-ray Diffraction analysis showed that the films have a wurtzite-type hexagonal crystalline structure with a preferential crystallographic orientation (002) normal to the c axis. The average transmittance is greater than 76% for the wavelength range in the visible spectrum. The bandgap values were found between 3.32 and 4.01 eV, and refractive index was 1.79–2.60. Atomic force microscope measurements show homogeneous films with a roughness between 17–22 nm. A minimum resistivity value of 2.0 × 10−3 Ω cm was obtained for the film by using a power ramp of 4 W/1.8 min.

(Invited) Modification of Dielectric Properties of Film Dielectric Materials by Solid Solution System

Compound semiconductor based power devices such as SiC and GaN require high temperature operating passive devices such as a capacitor. SiC-based active devices can operate above 250 °C. The development of high-temperature operational passives is urgently needed to advance to the module and system level. In the case of capacitors, currently available capacitors can only operate efficiently up to 175 °C. Therefore, a thin film capacitor that can operate at high temperatures and be monolithically integrated near the active device should be developed. In this talk, I will present our achievements in the development of high-temperature operating dielectric film materials using the solid solution system. One topic is A2B2O7 pyrochlore ferroelectrics. The ferroelectric materials with the pyrochlore structure such as Sr2Nb2O7 exhibited the high dielectric constant above 100 at high and low temperature ranges. However, due to the crystallographic direction dependence of the Curie-Weiss temperature, the temperature stability of the dielectric constant from room temperature to 300 °C was not available. In order to obtain the high temperature stability of dielectric constant from room temperature to 300 °C with high dielectric constant over 100, the pyrochlore ferroelectric solid solution thin films were investigated by employing the combinatorial synthesis. Composition spread thin films of solid solution of two or three kinds of materials were deposited on substrates by physical vapor deposition technique, which provided the systematic physical properties. High-throughput combinatorial synthesis method is effective in the rapid optimization of the correlation between the crystallization and the dielectric property change behavior. For the composition spread solid solution film, the Sr- or La-containing A2B2O7 pyrochlore ferroelectrics were selected from the viewpoints of ion radios and crystallographic direction dependence of the Curie-Weiss temperature. The composition spread films were formed on a Pt/Ti/SiO2/Si substrate by combinatorial RF sputtering with stoichiometric composition targets. The X-ray fluorescence spectrum of the composition-spread film showed a linear variation of the metal composition. After deposition, the samples were annealed at different temperatures under oxygen atmosphere to reduce oxygen vacancies and improve crystallinity. The crystallization of the composition-spread solid solution thin film was confirmed by X-ray diffraction patterns, indicating the composition dependence of the crystallographic orientation. Some compositions showed high dielectric constant over 100 and high temperature stability from room temperature to 300 °C. In the presentation, the correlation between film composition, orientation and dielectric constant will be discussed in detail. In the presentation, we also introduce our achievement of the BaTiO3 based relaxor ferroelectrics and other dielectric materials development using the solid solution system. For the relaxor ferroelectrics, among the BaTiO3 based relaxor ferroelectrics, we have selected x[BaTiO3]-(1-x)[Bi(Mg2/3Nb1/3)O3] . The permittivity of 400 and the stability <8% from room temperature to 400 °C were obtained, which are promising as high-temperature dielectric medium.

Synthesis, and impact of GaN deposition on the physical, optical, and structural properties of Nd3+-doped Na2O borate glasses prepared with soda lime (SLS) glass as a silica source

A novel Nd2O3-doped recycled SLS glasses sputtered with GaN were synthesized using the common melt-quenching method. The synthesized glassy samples were investigated by characterizing them structurally, physically, and optically. XRF revealed a SiO2 content of 70.81 wt% from the SLS sample. XRD discovered the amorphous nature of the studied glasses. FTIR confirmed the structural alterations and presence of functional groups. With the inclusion of Nd2O3, the Vm, and ρ increased due to the greater Mwt of Nd2O3 and the wider ionic radius of Nd3+ creating more NBO thereby expanding the glass structure. Using the Tauc model, the Egopt was derived. The direct band gap decreased from 3.51 to 3.38 eV with increasing Nd2O3, however the indirect band gap shows an energy increase, from 2.01 to 2.25 eV. The refractive index decreased with increasing Nd2O3 while the Urbach energy increased with Nd2O3. The influence of the GaN target deposited on the glass surface using RF sputtering is noticed clearly in the sample's surface morphology (AFM) which increases the root-mean-square (RMS) roughness value from 571 to 872 nm which is confirmed in the FESEM results.

The significance of bilayer window (CdS:O/CdS) on the performance of CdTe thin film solar cells

Ultrathin and compact CdS:O/CdS bilayer window in CdTe solar cells has higher potential for enhanced p-type doping, reduced Te diffusion, and improved power conversion efficiency (PCE) compared to traditional single-layer CdS or CdS:O windows. In this effort, we used a two-gun RF sputtering equipment to deposit compact CdS:O (∼50 nm)/CdS(∼50 nm) bilayers onto the borosilicate and ITO-coated glass substrates at low temperature (≤250 °C). Intriguingly CdS:O/CdS bilayers retain its hexagonal {0002} preferential orientation but with around 10.58 % optical bandgap (Eg) increment compared to CdS (Eg ≈ 2.32 eV) of equal thickness (∼100 nm). Close-spaced sublimation (CSS) technique was used to deposit the CdTe thin film onto the CdS and CdS:O/CdS layers at 650 °C. The effect of CdS and CdS:O/CdS layers on the microstructural and morphological features of CdCl2-treated CdTe films were critically analyzed in revealing a promising {0001}/{111}-like partial-epitaxy presumably due to the preferential cubic CdTe growth along the <111> orientation. The CdTe films grown over a CdS:O/CdS layer exhibited smaller average crystallite and grain sizes than those grown over a single CdS layer. An essential finding was the formation of an optimal intermix layer of CdSxTe1-x, particularly evident in the CdTe films grown on the CdS:O/CdS bilayer. To comprehensively explore the effect of CdS:O/CdS window layers on PCE, complete CdTe solar cells were fabricated using three different window layers: CdS, CdS:O, and CdS:O/CdS, which are all considered as rudimentary as no layer optimization was performed. Notably, CdTe solar cell that incorporates the CdS:O/CdS bilayer window exhibited the most promising performance among all the tested rudimentary cells and corroborated the numerically simulated findings conducted by the SCAPS-1D simulator.

Investigating the role of palladium electrical contacts in interactions with carbyne nanomaterial solid matter

Introduction: Traps at the interface between carbyne and palladium nanocoatings, produced at different growth conditions, are explored by current-voltage characteristics, scanning electron microscopy and thermal stimulation of charges for evaluation of their nature. It was found that the Pd films can form an Ohmic contact with the carbyne at certain deposition conditions and such deviated from the Ohmic behavior according to the RF sputtering voltage. This growth parameter was found to affect the interfacial traps formation on the carbyne surface, which is important feature for the charge trapping and releasing properties for hydrogen isotopes in the context of the energy release applications.Methods, Results and Discussion: The sputtering voltages of 0.5 kV and 0.7 kV were found unsuitable for controlled trap formation. Based on the currentvoltage and thermally stimulated current (TSC) measurements, a sputtering voltage of 0.9 kV appeared to be more favorable compared to 0.5 kV and 0.7 kV. At 0.9 kV thermal activation of charge carriers are enabled at lower thermal energies, showing a distinct change in TSC behavior correlated to trap activation.

The effect of RF sputtering power on structural, nanomechanical and tribological properties of single layered TaN coatings

Single-layered TaN thin coatings were deposited on Ti6Al7Nb alloy substrates using reactive radiofrequency magnetron sputtering, with variations in target power. To assess the crystalline structure, chemical composition, and surface topography of these coatings, Grazing Incidence x-ray Diffraction (GIXRD), Energy Dispersive Spectroscopy (EDS), and Scanning Probe Microscopy (SPM) were employed, respectively. The study revealed that deposition power impacts the structure and composition of TaN coatings. Further analysis using x-ray Photoelectron Spectroscopy (XPS) indicated that the TaN coatings predominantly consisted of Ta and N, with trace amounts of oxygen (O 1s). Additionally, nanomechanical testing was conducted to evaluate hardness (H), modulus (E), and scratch properties. Results suggested that multiphase hex-TaN coatings exhibited superior H, E, and scratch properties compared to other cubic-structured TaN coatings. Friction and wear properties against steel balls under dry sliding conditions were determined using a ball-on-disk nanotribometer. The findings showed that mix-phase TaN coating exhibited a minimum coefficient of friction of 0.054 and a wear rate of 2.14 × 10−6 mm3/N.m. Abrasion, ploughing and oxidation were identified as the primary wear mechanism responsible for the wear of the TaN coatings.

Characterization of NiCuOxNy Coatings Obtained via RF Sputtering: Structure, Morphology, and Optical Properties.

The rapid advancement of technology necessitates the continual development of versatile materials that can adapt to new electronic devices. Rare earth elements, which are scarce in nature, possess the set of properties required for use as semiconductors. Consequently, this research aims to achieve similar properties using materials that are abundant in nature and have a low commercial cost. To this end, nickel and copper were utilized to synthesize thin films of nickel-copper binary oxynitride via reactive RF sputtering. The influence of nitrogen flow on the structure, morphology, chemical composition, and optical properties of the films was investigated using various characterization techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS), as well as transmittance and absorbance measurements. The crystalline structure of the films shows that they can have preferential growth or be polycrystalline according to the nitrogen flow used during deposition and that both the oxides and oxynitrides of metals are formed. We identified unknown phases specific to this material, termed "NiCuOxNy". The morphology revealed that the grain size of the coatings was dependent on the nitrogen flow rate, with grain size decreasing as the nitrogen flow rate increased. Notably, the coatings demonstrated transparency for wavelengths exceeding 1000 nm, with an optical band gap ranging from 1.21 to 1.86 eV.

Interplay between the heat treatment and structural and optical properties of Nb2O5 thin films

Thin films of Nb2O5 were synthesized by RF sputtering. The effect of annealing, at different temperatures (100, 150, 200, 250, 300, 350, and 400 °C), on the structural and optical properties was studied. The crystallinity and structural characteristics of the Nb2O5 thin films were examined employing the X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD and SEM analyses showed an amorphous nature for the as-deposited and annealed samples from 100 to 350 °C and crystalline structure for the annealed sample at 400 °C. The high values of the transmittance and low reflection make these films used as a window layer in solar cell systems. Upon increasing annealing temperature, the energy band gap Eg increased from 4.039 to 4.175 eV. Eg high values again make these films suitable to be used as a window layer in solar cell system. Urbach tail, EU, decreased with increasing annealing temperature. The refractive index showed the normal dispersion. The dispersion energies were found to have the same behavior with respect to annealing temperature, besides, the single oscillator energy Eₒ had a lower value compared to the dispersion energy Ed. The plasma frequency ωp\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\omega }_{p}$$\\end{document} was found to increase with annealing temperature. The first and third optical moments had peak values depending on the incident photon energy.