Resistive Switching Research Articles

Integration of CeO2-Based Memristor with Vertically Aligned Nanocomposite Thin Film: Enabling Selective Conductive Filament Formation for High-Performance Electronic Synapses.

The CeO2-based memristor has attracted significant attention due to its intrinsic resistive switching (RS) properties, large on/off ratio, and great plasticity, making it a promising candidate for artificial synapses. However, significant challenges such as high power consumption and poor device reliability hinder its broad application in neuromorphic microchips. To tackle these issues, in this work, we design a novel bilayer (BL) memristor by integrating a CeO2-based memristor with a Co-CeO2 vertically aligned nanocomposite (VAN) layer and compare it with the single layer (SL) memristor. Preliminary electrical testing reveals that the BL memristor offers a reduced set/reset voltage (∼67% lower), a higher on/off ratio (∼5 × 102), enhanced device reliability, and improved device-to-device variation compared to the SL memristor. Insight from COMSOL simulation, coupled with microstructural analysis, provides a comprehensive elucidation on how the VAN layer facilitates the selective conductive filament (CF) formation. Subsequently, the plasticity of the BL memristor is evaluated through long-term potentiation/depression (LTP/LTD), paired-pulse facilitation (PPF), and spike-time-dependent plasticity (STDP). The spiking neural network (SNN) built upon the BL memristor achieves remarkable accuracy (∼94%) after only 12 iterations, underscoring its potential for high-performance neural networks.

Conductive Islands Assisted Resistive Switching in Biomimetic Artificial Synapse for Associative Learning and Image Recognition

AbstractSolution‐processed memristor devices hold significant potential for advancing synaptic applications, offering scalable, cost‐effective, and efficient solutions for next‐generation neuromorphic systems. These devices replicate the behavior of biological synapses with their gradual and continuous changes in resistance, making them promising for neuromorphic computing and artificial neural networks. However, understanding the temporal characteristics and cumulative effect of successive pulses on the devices is essential for emulating the dynamics of biological synapses. This study proposes a hybrid materials‐based conductive islands‐assisted resistive switching (CIARS) in a solution‐processed active layer consisting of thermally exfoliated graphitic carbon nitride (g‐C3N4 abbreviated as CN) nanosheets embedded with silver nanoparticles (Ag NPs). The fabricated devices demonstrate repeatable and bipolar memory features with a lower operating voltage (≤0.5 V), emulating the frequency and amplitude‐dependent synaptic plasticities. The threshold switching occurs due to the formation of conduction filaments (CFs) of silver ion (Ag+), whereas the analog behavior results from the voltage pulse‐dependent modulation of Schottky barrier height combined with metallic CFs formation. The experimental findings demonstrate the efficacy of the CIARS mechanism within the material platform, highlighting its potential for applications in associative learning, Morse code detection, and image recognition.

Stable Millivolt Range Resistive Switching in Percolating Molybdenum Nanoparticle Networks.

To overcome the limitations of the conventional Von Neumann architecture, inspiration from the mammalian brain has led to the development of nanoscale neuromorphic networks. In the present research, molybdenum nanoparticles (NPs), which were produced by means of gas phase condensation based on magnetron sputtering, are shown to be the constituents of electrically percolating networks that exhibit stable, complex, neuron-like spiking behavior at low potentials in the millivolt range, satisfying well the requirement of low energy consumption. Characterization of the NPs using both scanning electron microscopy and scanning transmission electron microscopy revealed not only pristine shape, size, and density control of Mo NPs but also a preliminary proof of the working mechanism behind the spiking behavior due to filament formations. Furthermore, electrostatics COMSOL Multiphysics simulations of the morphology of the NPs provided evidence that the stable switching is due to the as-deposited stellate Mo NPs creating high electric field strengths, while keeping them separated, not seen before in other percolating networks based on spherical NPs. Hence, our results show the working mechanism behind switching in percolating Mo NP networks and show that they are very promising for realistic neuromorphic systems.

Effect of annealing conditions on resistive switching in hafnium oxide-based MIM devices for low-power RRAM

Abstract This work presents resistive switching (RS) behaviour in HfO2-based low-power resistive random-access memory (RRAM) devices. A metal-insulator-metal (MIM) structure (Au/HfO2/Pt) was fabricated by sandwiching a thin insulating layer of HfO2 between Pt and Au electrodes. HfO2 films deposited by RF sputtering at room temperature were rapid thermally annealed in N2 ambient at 400 °C and 500 °C. Grazing angle x-ray diffraction (GIXRD), Field emission gun-scanning electron microscopy (FEG-SEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) were employed to analyse the phase, crystal structure, morphology, surface roughness and chemical composition of the HfO2 films. The bipolar RS could be observed in both as-deposited and annealed HfO2 film-based devices from I–V characteristics measured using a source meter. We have investigated the effect of annealing temperature and annealing ambient on the phase formation of HfO2 as well as the RS characteristics and compared with as-deposited film-based device. Annealed HfO2 film-based devices exhibited improved electrical characteristics, including stable and repeatable RS at significantly lower switching voltages (<1 V) which indicates low power consumption in these devices. The relatively lower processing temperature of the HfO2 films and that too in the films deposited by physical vapor deposition (PVD) technique-RF magnetron sputtering makes this study significantly useful for resistive switching based non-volatile memories.

Analyzing negative differential resistance and capacitive effects in SiOx-based resistive switching devices for security applications

In this work, we analyze the negative differential resistance and capacitive effects in SiOx-based resistive switching devices. The cause of the negative differential effect has been investigated through the study of the switching mechanism in the devices. It has been observed that there is a combination of trap-controlled space charge limited conduction and trap-assisted Poole-Frenkel effect in the devices. Trapping and de-trapping of injected electrons in the defects within the silica structure causes the negative differential resistance effect. This characteristic feature can be employed to design chaotic circuits for security applications. In addition, the high electric field developed in the device compared to the applied field during the change of bias voltage from ±5V–0V, results in a capacitor discharge-like effect. This work will be a step forward in achieving the global Sustainable Development Goal of Peace, Justice, and Strong Institutions (SDG 16).

Impact of Light on Coexistence of Memresistance, Meminductance, and Memcapacitance (MEMRIC) in Nanostructured Copper Oxide (CuO) Based Random Access Memory Devices.

We demonstrated the coexistence of memresistance, memcapacitance, and meminductance non-volatile bipolar analog resistive switching in Cu (top electrode)/CuO (active layer)/SS (bottom electrode) memory devices with and without presence of the light. The onset of memcapacitance and meminductance is noticed from the pinched-shaped characteristics in the first and third quadrants. The variation in the scan rate also impacts the coexistence characteristics by shifting the intercept point for low resistance (LRS) and high resistance (HRS) states in positive and negative biasing voltages. The durability and retention are measured over a period of 150 cycles and 1500 s with and without light illumination. The slopes for the Weibull cumulative distribution plot for set/reset state with and without light are 106.80/114.23 and 70.21/102.25, respectively, suggesting that the stability of the device increases with light illumination. Interestingly, the memcapacitance disappears after 600 cycles and after 60 . The double logarithmic I-V characteristics suggest the trap-assisted conduction (higher slope >2) in the higher external electric field, and Ohmic behavior in the lower applied field region. Thus, the present study provides a way for low-power electronics and photoresistors together with memresistance, memcapacitance, and meminductance, simultaneously, i. e., MEMRIC in a single device.

Anomalous resistive switching effect in La0.8Ca0.2MnO3/Nb:SrTiO3 structure

A barrier-type resistive switching (RS) unit, composed of a metal and Nb:SrTiO3 (NSTO), holds significant potential for data storage applications due to its high storage density, low operating voltage, and excellent stability. While extensive research has been conducted on conductive oxides (COs), there has been relatively less focus on the RS properties of heterogeneous structures combing CO electrodes and NSTO. Epitaxial growth of CO on NSTO is expected to yield devices with enhanced stability and repeatability. This study explores the RS characteristics of La0.8Ca0.2MnO3 (LCMO)/NSTO heterostructures through epitaxy of both conventional and anoxic LCMO films on (00 l)-oriented NSTO single crystal substrates. The results reveal that the conventional LCMO/NSTO structure exhibits a conventional counterclockwise bipolar RS (BRS) effect, while the anoxic LCMO/NSTO heterostructure demonstrates a unique clockwise (CW) BRS effect (exhibiting different RS characteristics under different applied voltages). The study concludes that the CW-BRS effect mechanism is attributed to a high concentration of oxygen vacancies (Vo) in LCMO. Under different external electric fields, Vo in LCMO and NSTO migrate to the LCMO/NSTO interface, respectively, leading to multiple changes in the interface barrier. These findings offer valuable experimental insights for utilizing CO in the field of RS applications.

A semiconducting supramolecular Co(II)-metallogel based resistive random access memory (RRAM) design with good endurance capabilities.

A highly efficient approach for synthesizing a supramolecular metallogel of Co(II) ions, denoted as CoA-TA, has been established under room temperature and atmospheric pressure conditions. This method employs the metal-coordinating organic ligand benzene-1,3,5-tricarboxylic acid as a low molecular weight gelator (LMWG) in DMF solvent. A comprehensive analysis of the mechanical properties of the resulting supramolecular Co(II)-metallogel was conducted through rheological investigation, considering angular frequency and thixotropic study. The hierarchical rocky network structure of the supramolecular Co(II)-metallogel was unveiled using field emission scanning electron microscopy (FESEM). Transmission electron microscopic (TEM) analysis showed rod-shaped structures via low-magnification high angle annular dark field (HAADF) bright field scanning transmission electron microscopic (STEM) imaging, while energy dispersive X-ray (EDX) elemental mapping confirmed its primary chemical constituents. The formation mechanism of the metallogel was examined via fourier transform infrared spectroscopy (FTIR) spectroscopy. The nature of the synthesized CoA-TA metallogel was affirmed through powder X-ray diffraction (PXRD) analysis. Furthermore, this study involved fabrication of Schottky diode structures in a metal-semiconductor-metal geometry based on cobalt(II) metallogel (CoA-TA), enabling observation of charge transport behavior. Remarkably, a resistive random access memory (RRAM) device utilizing cobalt(II) metallohydrogel (CoA-TA) demonstrated bipolar resistive switching at room temperature and under ambient conditions. The switching mechanism was investigated, revealing the formation and rupture of conductive filaments between metal electrodes that govern the resistive switching behavior. This RRAM device exhibited an impressive ON/OFF ratio (~ 414) and exceptional endurance over 5000 switching cycles. These structures offer great potential for diverse applications such as non-volatile memory design, neuromorphic computing, flexible electronics and optoelectronics. Their advantages lie in their fabrication process, reliable resistive switching behavior and overall performance stability.

Fabrication of Tungsten/n-CdSe/Pyrographite/Brass sandwiched electronic device and transport characterization for its resistive switching applications

Fabrication of Tungsten/n-CdSe/Pyrographite/Brass sandwiched electronic device and transport characterization for its resistive switching applications

Proton‐Modulated Resistive Switching in a Synapse‐Like Tyrosine‐Rich Peptide‐Based Memristor

AbstractArtificial intelligence has become an essential part of the daily lives and has revolutionized various sectors, including healthcare, finance, transportation, and entertainment. With a substantial increase in processed data, neuromorphic devices that replicate the operation of the human brain have been emphasized owing to their superior efficiency. Typical neuromorphic devices focus on constructing synapse‐like structures. However, biological synapses have more complex mechanisms for efficient data processing. One of the most prominent mechanisms is proton activation, which forms an ion concentration gradient prior to the transmission of neurotransmitters and plays a key role in efficient computation. In this study, proton‐mediated signaling at biological synapses is successfully replicated by fabricating a proton‐modulated memristor device using a tyrosine‐rich peptide film. The ionic input of the memristor is controlled by applying a voltage to proton‐permeable PdHx contacts in a hydrogen atmosphere, thus successfully adjusting the resistive switching behavior. Remarkable improvements in resistive switching and computing performance are observed through proton injection, analogous to “proton‐mediated signaling” at the actual synapse. It is believed that this study proposes a new paradigm for designing biorealistic devices and provides inspiration for precisely controllable ion‐based neuromorphic devices.

Solution-Processed TiO2/ZnFe2O4 Heterostructure for Stable Multilevel Memristor with Room-Temperature Reactive Gas Selectivity.

Solution-processed oxide-based heterojunctions that work in diverse directions will be ideal alternatives for cost-effective, stable, and multifunctional devices. Here, we have reported a stable multilevel resistive switching (RS) at the solution-processed TiO2/ZnFe2O4 heterointerface with endurance stability over 104 cycles and retention over 105 s. It can maintain the switching after dripping water onto the device, followed by drying at 100 °C and at an operating temperature of up to 200 °C. As the switching mechanism is governed by filamentary and interface-dominated charge conduction, our device shows additional tunability in the low resistance state (LRS) by changing environmental conditions. The inability to form filaments results in almost negligible switching under a vacuum or inert environment with an LRS loss. Meanwhile, the presence of reducing gas leads to a depletion layer lowering at the TiO2/ZnFe2O4 heterointerface by removing the surface-adsorbed oxygen molecules that help filament conduction through the interface and, hence, a change in LRS. Furthermore, different reaction capacities of different reactive gas environments with the surface-adsorbed oxygen molecule lead to discrete ON-OFF ratios, presenting a pathway to identify several reactive vapors like ammonia, formaldehyde, and acetone at room temperature and presenting a new approach for integrating RS and room temperature gas sensing in the multifunctional device technology.

Variable‐Range Hopping Conduction in Amorphous, Non‐Stoichiometric Gallium Oxide

AbstractAmorphous, non‐stoichiometric gallium oxide (a‐GaOx, x < 1.5) is a promising material for many electronic devices, such as resistive switching memories, neuromorphic circuits and photodetectors. So far, all respective measurements are interpreted with the explicit or implicit assumption of n‐type band transport above the conduction band mobility edge. In this study, the experimental and theoretical results consistently show for the first time that for an O/Ga ratio x of 0.8 to 1.0 the dominating electron transport mechanism is, however, variable‐range hopping (VRH) between localized states, even at room temperature and above. The measured conductivity exhibits the characteristic exponential temperature dependence on T−1/4, in remarkable agreement with Mott's iconic law for VRH. Localized states near the Fermi level are confirmed by photoelectron spectroscopy and density of states (DOS) calculations. The experimental conductivity data is reproduced quantitatively by kinetic Monte Carlo (KMC) simulations of the VRH mechanism, based on the ab‐initio DOS. High electric field strengths F cause elevated electron temperatures and an exponential increase of the conductivity with F1/2. Novel results concerning surface oxidation, magnetoresistance, Hall effect, thermopower and electron diffusion are also reported. The findings lead to a new understanding of a‐GaOx devices, also with regard to metal|a‐GaOx Schottky barriers.

Demonstration of bipolar resistive memory fabricated using an ultra-thin BaTiOx resistive switching layer with a thickness of ∼5 nm

In this study, a high-performance non-volatile bipolar resistive random-access memory (RRAM), which was fabricated using an ultra-thin barium titanate (BaTiOx, BTO) film as a resistive switching (RS) layer, was demonstrated. The BTO RS layers, whose thicknesses were only about 5 nm, were prepared using radio-frequency sputtering under different oxygen flow rates. Introduction of oxygen was used to modify the chemical compositions of the BTO films. Copper was used as the top electrode material to realize a Cu/BTO/n+-Si electrochemical metallization memory, where the resistance switching was triggered by electrochemical reaction of Cu electrode. The RRAM could repeatedly and consistently switch between a high-resistance state and a low-resistance state over 300 cycles. A large memory window of 105 and a long data retention time of >1.5 × 104 s both at room temperature and 85 °C were observed. Moreover, the Cu/BTO/n+-Si RRAM showed high switching speeds of 60–70 ns.

Enhanced resistive switching performance in TiN/AlOx/Pt RRAM by high-temperature I-V cycling

Set voltage is a key parameter for the application of Resistance Random Access Memory (RRAM). In this paper, based on TiN/AlOx/Pt RRAM synthesized by the magnetron sputtering method, we have studied the influence of I-V cycling at high temperatures on resistive switching performance. The results show that the treatment can significantly reduce the set voltage in resistive switching cycles. Moreover, the treatment can also enhance endurance effectively. Further studies indicated that a higher compliance current in treatment can induce a smaller and more uniform set voltage. We ascribe the improvements in resistive switching performance to the generation and accumulation of oxygen vacancies in the treatment. This research provides new ideas for synthesizing RRAM devices with low power consumption.

Compliance current dependent multilevel resistive switching in Titanium dioxide nanosheet based memory devices

Compliance current dependent multilevel resistive switching in Titanium dioxide nanosheet based memory devices

Preparation of Zn1-xCexO resistive switching film on SS304 and its corrosion resistance mechanism in NaCl solution

Preparation of Zn1-xCexO resistive switching film on SS304 and its corrosion resistance mechanism in NaCl solution

Resistive switching behaviors and conduction mechanisms of IGZO/ZnO bilayer heterostructure memristors

Resistive switching behaviors and conduction mechanisms of IGZO/ZnO bilayer heterostructure memristors

A universal resist-assisted metal transfer method for 2D semiconductor contacts

Abstract With the explosive exploration of two-dimensional (2D) semiconductors for device applications, ensuring effective electrical contacts has become critical for optimizing device performance. Here, we demonstrate a universal resist-assisted metal transfer method for creating nearly free-standing metal electrodes on the SiO2/Si substrate, which can be easily transferred onto 2D semiconductors to form van der Waals (vdW) contacts. In this method, polymethyl methacrylate (PMMA) serves both as an electron resist for electrode patterning and as a sacrificial layer. Contacted with our transferred electrodes, MoS₂ exhibits tunable Schottky barrier heights and a transition from n-type dominated to ambipolar conduction with increasing metal work functions, while InSe shows pronounced ambipolarity. Additionally, using α-In2Se3 as an example, we demonstrate that our transferred electrodes enhance resistance switching in ferroelectric memristors. Finally, the universality of our method is evidenced by the successful transfer of various metals with different adhesion forces and complex patterns.

Mott resistive switching initiated by topological defects

Avalanche resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation, the nature of the local stochastic fluctuations that drive the formation of metallic regions within the insulating state has remained hidden. Here, using operando X-ray nano-imaging, we have captured the origin of resistive switching in a V2O3-based device under working conditions. V2O3 is a paradigmatic Mott material, which undergoes a first-order metal-to-insulator phase transition together with a lattice transformation that breaks the threefold rotational symmetry of the rhombohedral metallic phase. We reveal a new class of volatile electronic switching triggered by nanoscale topological defects appearing in the shear-strain based order parameter that describes the insulating phase. Our results pave the way to the use of strain engineering approaches to manipulate such topological defects and achieve the full dynamical control of the electronic Mott switching. Topology-driven, reversible electronic transitions are relevant across a broad range of quantum materials, comprising transition metal oxides, chalcogenides and kagome metals.

Synaptic Properties of an Interfacial Memristor Based on a Ga2O3/Nb:SrTiO3 Heterojunction.

Memristors have been extensively studied for tremendous potential for future neuromorphic computing hardware applications because of their ability to imitate biological synaptic processes. Herein, we report an interfacial memristor based on a Ga2O3/Nb:SrTiO3 heterojunction that shows stable bipolar resistive switching behavior, long retention time, and high switching ratio. The conductance of the Au/Ga2O3/Nb:SrTiO3/In memristor can be gradually modulated under the voltage sweep mode as well as positive and negative pulse voltage stimulations, respectively, thus realizing the long-term potentiation/depression characteristics of the simulated biological synapse. A neural network based on the prepared memristor was built to recognize the handwritten picture data set with a recognition accuracy of 92.78% by using the NeuroSimV3.0 platform. Our work indicates that the Ga2O3/Nb:SrTiO3 heterojunction memristor has significant potential in a neuromorphic computing system.