Resistance State Research Articles

Abstract PR004: Age-induced chronic accumulation of glucocorticoids drives therapy resistance in lung cancer

Abstract Non-small cell lung cancer (NSCLC), a highly aggressive cancer, is the leading cause of cancer- related deaths in the U.S. While chemotherapy and targeted therapy are the main treatment modalities in the clinic, many patients do not respond to these treatments. Strikingly, the median age for lung cancer diagnosis is 71. Yet, preclinical and clinical research have largely been skewed towards young mice and patients. Here, we address this gap in knowledge and evaluate if old age affects the response to standard of care NSCLC therapies in KRAS-driven NSCLC. Using human sera from young and old healthy subjects to treat NSCLC cell lines, we show that age-driven circulatory changes are sufficient to drive a state of profound resistance to both chemotherapies as well as KRASG12C targeted therapies. We confirmed the relevance of our findings in vivo, by transplanting cancer cells derived from the K-rasLSL-G12D/+; p53fl/fl genetically engineered mouse model of lung cancer into young and old C57BL/6 mice. Using this model we showed that unlike young lung tumor-bearing mice on chemotherapy, old tumor-bearing mice do not respond to treatment and have a poor prognosis. Mechanistically, we found that old age drives a transcriptional reprogramming that favors drug resistance and identified the glucocorticoid receptor as a major driver of these transcriptional changes. We traced this to an age-induced chronic accumulation of glucocorticoids in circulation and within the tumor interstitial fluid. Chronic treatment with age-relevant concentrations of cortisol alone was sufficient to drive glucocorticoid receptor activation and induce resistance to therapies mirroring the effects of old age. Further supporting a driving role for glucocorticoids in driving age- induced drug resistance, blocking the glucocorticoid receptor genetically or pharmacologically rescues the drug resistance state imposed by old age in NSCLC cells. Lastly, using TCGA patient data we show an inverse correlation between glucocorticoid receptor activation (GR score) and progression-free survival of lung cancer patients. Together, our work demonstrates a role for age-induced glucocorticoids in circulation in promoting therapy-resistance in NSCLC patients and supports the use of therapeutic agents that block the glucocorticoid receptor as a strategy to increase therapy efficacy in NSCLC patients. Citation Format: Devesh Raizada, Felicia Lazure, Stanislav Drapela, Nadir Sarigul, Joanne Tejero, Didem Ilter, Ana Da Silva Gomes. Age-induced chronic accumulation of glucocorticoids drives therapy resistance in lung cancer [abstract]. In: Proceedings of the AACR Special Conference in Cancer Research: Tumor-body Interactions: The Roles of Micro- and Macroenvironment in Cancer; 2024 Nov 17-20; Boston, MA. Philadelphia (PA): AACR; Cancer Res 2024;84(22_Suppl):Abstract nr PR004.

Graphene Oxide-Doped Indium Oxide Buffer Film Sandwiched between Titanium Oxide Layers for the Development of Photosensitive Resistive Memory Devices.

Over the past decade, metal oxide semiconductors have attracted considerable attention because of their transparency, high intrinsic charge carrier mobility, and charge carrier density. Metal oxide semiconductors also provide a promising route to develop resistive memory devices because of the tunability of their conductivity via the removal of oxygen ions, forming oxygen vacancies that can act as electron donors. Here, this paper reports the fabrication of a resistive random-access memory (ReRAM) device with TiO2 and TiO2-x layers and introduces a solution-processed In2O3-graphene oxide (GO) buffer layer from a water-based precursor solution to tune the switching characteristics. The devices were compared with a ReRAM device with no buffer layer, and the device composition was optimized by tuning the GO concentration in the layers. The devices showed hysteresis under cyclically scanned bias between positive and negative voltages with clear switching between the low resistance state (LRS) and the high resistance state (HRS). The optimized device also showed a more than 3 orders of magnitude difference in resistance between the LRS and HRS and a stable current retention. The devices also showed photoresponsive behaviors. In the LRS, the current increased significantly under illumination, while in the HRS, the current deteriorated slowly when constantly illuminated. These results highlight the dual role of the GO flakes in the buffer layer by increasing the resistance in the HRS and providing a photoresponsive switching capability. The ReRAM device was connected to a TFT device, and its feasibility as a memory component in a digital circuit was successfully demonstrated. These results provide a new avenue for developing metal-oxide-based ReRAM devices with GO-containing active layers.

Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta2O5/Al2O3/TiN Memristors.

This study introduces a Ta2O5-based self-rectifying memristor (SRM) with an Al2O3 interfacial layer adopted to improve switching uniformity, read voltage margin, and long-term retention. The Pt/Ta2O5/Al2O3/TiN (PTAT) device exhibits a 105 rectification ratio, 104 on/off ratio, 2 × 106 endurance, and retention of 104 s at 150 °C. A 3-layer 4 × 4 vertical resistive random access memory structure exhibits uniform switching parameters. The coefficient of variation (CV) for device-to-device measurements is 0.23 for the low resistance state (LRS) and 0.22 for the high resistance state (HRS), while for cycle-to-cycle measurements, the CV is 0.38 for the LRS and 0.11 for the HRS. Finally, the present study demonstrates the superior performance of the PTAT devices in the context of hardware-aware training for a fully connected neural network implementation. These advancements position the PTAT device as a promising candidate for high-density three-dimensional storage class memory and low-power neural networks, offering the consistent performance and reliability necessary for future high-density storage applications.

Impact of Light on Coexistence of Memresistance, Meminductance, and Memcapacitance (MEMRIC) in Nanostructured Copper Oxide (CuO) Based Random Access Memory Devices.

We demonstrated the coexistence of memresistance, memcapacitance, and meminductance non-volatile bipolar analog resistive switching in Cu (top electrode)/CuO (active layer)/SS (bottom electrode) memory devices with and without presence of the light. The onset of memcapacitance and meminductance is noticed from the pinched-shaped characteristics in the first and third quadrants. The variation in the scan rate also impacts the coexistence characteristics by shifting the intercept point for low resistance (LRS) and high resistance (HRS) states in positive and negative biasing voltages. The durability and retention are measured over a period of 150 cycles and 1500 s with and without light illumination. The slopes for the Weibull cumulative distribution plot for set/reset state with and without light are 106.80/114.23 and 70.21/102.25, respectively, suggesting that the stability of the device increases with light illumination. Interestingly, the memcapacitance disappears after 600 cycles and after 60 . The double logarithmic I-V characteristics suggest the trap-assisted conduction (higher slope >2) in the higher external electric field, and Ohmic behavior in the lower applied field region. Thus, the present study provides a way for low-power electronics and photoresistors together with memresistance, memcapacitance, and meminductance, simultaneously, i. e., MEMRIC in a single device.

Solution-Processed TiO2/ZnFe2O4 Heterostructure for Stable Multilevel Memristor with Room-Temperature Reactive Gas Selectivity.

Solution-processed oxide-based heterojunctions that work in diverse directions will be ideal alternatives for cost-effective, stable, and multifunctional devices. Here, we have reported a stable multilevel resistive switching (RS) at the solution-processed TiO2/ZnFe2O4 heterointerface with endurance stability over 104 cycles and retention over 105 s. It can maintain the switching after dripping water onto the device, followed by drying at 100 °C and at an operating temperature of up to 200 °C. As the switching mechanism is governed by filamentary and interface-dominated charge conduction, our device shows additional tunability in the low resistance state (LRS) by changing environmental conditions. The inability to form filaments results in almost negligible switching under a vacuum or inert environment with an LRS loss. Meanwhile, the presence of reducing gas leads to a depletion layer lowering at the TiO2/ZnFe2O4 heterointerface by removing the surface-adsorbed oxygen molecules that help filament conduction through the interface and, hence, a change in LRS. Furthermore, different reaction capacities of different reactive gas environments with the surface-adsorbed oxygen molecule lead to discrete ON-OFF ratios, presenting a pathway to identify several reactive vapors like ammonia, formaldehyde, and acetone at room temperature and presenting a new approach for integrating RS and room temperature gas sensing in the multifunctional device technology.

Ultrafast reconfigurable direct charge trapping devices based on few-layer MoS2

Abstract Charge trapping devices incorporating 2D materials and high-κ dielectrics have emerged as promising candidates for compact, multifunctional memory devices compatible with silicon-based manufacturing processes. However, traditional charge trapping devices encounter bottlenecks including complex device structure and low operation speed. Here, we demonstrate an ultrafast reconfigurable direct charge trapping device utilizing only a 30 nm-thick Al2O3 trapping layer with a MoS2 channel, where charge traps reside within the Al2O3 bulk confirmed by transfer curves with different gate-voltage sweeping rates and photoluminescence (PL) spectra. The direct charging tapping device shows exceptional memory performance in both three-terminal and two-terminal operation modes characterized by ultrafast three-terminal operation speed (≈300 ns), an extremely low OFF current of 10-14 A, a high ON/OFF current ratio of up to 107, and stable retention and endurance properties. Furthermore, the device with a simple symmetrical structure exhibits VD polarity-dependent reverse rectification behavior in the high resistance state (HRS), with a rectification ratio of 105. Additionally, utilizing the synergistic modulation of the conductance of the MoS2 channel by VD and VG, it achieves gate-tunable reverse rectifier and ternary logic capabilities.

Solving mystery with the Meissner state in La3Ni2O7-δ

Recently, zero resistance state in highly compressed La3Ni2O7-δ has been observed. However, all attempts of many research groups to detect the Meissner state in the La3Ni2O7-δ have been failed. To explain this puzzle, an exotic superconducting state (for instance, filamentary superconductivity) in the La3Ni2O7-δ has been supposed. Here, I extracted temperature dependent self-field critical current, Ic(sf,T), dataset from current-voltage curves and performed the Ic(sf,T) analysis. As a result, I found that highly compressed La3Ni2O7-δ to exhibits d-wave superconductivity with the gap-to-transition temperature ratio 2Δ(0)/(kBTc) = =4.0 ± 0.3, a very large ground state London penetration depth, λ(0, P = 16.6 GPa) = 6.0 μm, and a very high Ginzburg-Landau parameter k(0, P = 16.6 GPa) = 1500. This implies that the ground state lower critical field Bc1(0, P = 16.6 GPa) = 34 μT is of the same order as the Earth’s magnetic field. Based on this, to detect the Meissner state in the La3Ni2O7-δ becomes a very challenging task. I can hypothesize that the magnetic flux trap effect recently proposed to eliminate the diamond anvil cell (DAC) background in experiments on magnetic properties of the superconducting hydrides can also apply in studies of magnetic properties in the La3Ni2O7-δ superconductor.

Machine Learning Enabled High‐Throughput Screening of 2D Ultrawide Bandgap Semiconductors for Flexible Resistive Materials

AbstractThe 2D ultrawide bandgap (UWBG) semiconductors have attracted great attentions for the next generation of electronics and optoelectronics, owing to their superiority on material flexibility, device stability, and power consumption. However, few 2D UWBG semiconductors have been discovered, impeding their prosperous developments and widespread applications. Here, a high‐throughput workflow is constructed to screen 2D UWBG semiconductors assisted by machine learning, and 507 potential candidates are obtained. Moreover, by learning, predicting, and screening Young's modulus and Poisson's ratio, 31 flexible 2D UWBG semiconductors are identified. Then the generation and the diffusion of anion vacancies, as well as the corresponding electronic properties are investigated by using the first‐principles calculations, and 3 of them are demonstrated as the most promising candidates for the flexible resistive materials. The facile interface tunneling and the increased material conductance caused by the anion vacancies will contribute to the transition from high resistive state to low resistive state. This work provides an efficient high‐throughput screening protocol to enrich the family of 2D UWBG semiconductors and is expected to foster their practical applications.

Feasibility study of analogue filters based on memristor

AbstractThis paper reports the critical parameters in fitting the Al:HfO2 memristor and exploits the memristor symbol derived from this fitting to design filter circuits. Memristor‐based filters can obtain at least two different filter ranges with the same filtering effect as conventional filters. Multistate resistance can be achieved by controlling the filamentary gap; adjusting the initial gap in the high resistance state from 1 to 0.1 nm could vary the cut‐off frequency of the filters from 230 MHz to 1.54 GHz. Memristor‐based band‐pass filter is also simulated by cascading a low‐pass filter and a high‐pass filter; the results show that a cut‐off frequency of 5.46 to 22.22 GHz can be tuned by adjusting the initial gap of a low resistance state from 0.4 nm down to 0.2 nm. Replacing the resistor in a conventional filter with a memristor allows the filter to have a variable range; this would solve the limitation where the conventional analogue filters have only a single filter range due to the fixed values of their constituent elements.

Human body resistance dynamics in the post-covid period

The issue of the state of specific and nonspecific resistance in the post-COVID period and the possible consequences of COVID-19 remains poorly understood. A clinical and laboratory examination of 124 patients was conducted at various time points after COVID-19 infection. 62 patients recovered completely and 62 had post-COVID syndrome. The leukocyte count and leukogram were evaluated in all patients. Immunogram parameters were additionally evaluated in patients with post-COVID syndrome. The results showed that, regardless of post-COVID syndrome, leukocyte count is lower in all patients within six months after COVID-19 infection than in unaffected subjects. The absolute neutrophil count is restored only 12 months later. In the presence of post-COVID syndrome, the absolute number of CD3+, CD4+and CD19+lymphocytes was lower than in healthy people. At the same time, 3 to 15 months after that, IgA titer in patients with PCS was significantly lower and that of for total IgM and IgG was higher without any clinical or laboratory signs of inflammation. The total blood IgE level was significantly higher and increased by the end of the observation period. A decreased activity of nonspecific protection, as well as indicators of cellular and humoral immunity in patients with post-COVID syndrome is accompanied by higher rate of viral and bacterial infections of various localization. Whereas during the first period an increase in total blood ID is not accompanied by clinical signs of atopy, then 6 months later the frequency of allergy increases. During the same period, cases of a joint syndrome revealed as arthralgia or progressive joint destruction become more frequent. Atopic manifestations are often combined with joint syndrome. Thus, after a COVID-19 infection, a low long-term level of nonspecific protection remains in vivo. In patients with post-COVID syndrome, low nonspecific and specific body resistance is manifested by viral and bacterial infections of the mucous membranes and skin. An imbalance in the immune system contributes to developing allergic and autoimmune processes.

Defining a pattern in the loss of integrity by ribbed plates under fire conditions

This paper reports a study aimed at assessing fire resistance of reinforced concrete ribbed slabs at the onset of integrity loss limit state. EN 1992-1-2 lacks calculation methodology for determining the limit of fire resistance of reinforced concrete slabs when the limit state of integrity loss occurs. Scientific works are focused on two limit states of fire resistance: load-bearing capacity and heat-insulating capacity. Experimental tests are criticized because of difficulties in registering signs of the onset of the limit state of loss of integrity, in particular due to the need to control the unheated surface of the ribbed plate during a fire under the action of mechanical load. Therefore, there is no calculation methodology for assessing the fire resistance of reinforced concrete ribbed slabs upon the onset of the limit state of loss of integrity. At the same time, to ensure the safe evacuation of people in the event of a fire, to prevent the spread of fire, as well as to carry out the effective work of rescuers, it is necessary to use building structures with guaranteed fire resistance classes. The paper reports the results of solving thermal engineering and static problems, which relate to the temperature distribution and stress-strain state of the investigated ribbed plate. Conducting research into the fire resistance of reinforced concrete ribbed slabs, taking into account the onset of the limit state of loss of integrity, made it possible to establish the dependence of the fire resistance limit of these structures on the loss of integrity on the level of applied mechanical load. The resulting dependence plot makes it possible to evaluate reinforced concrete ribbed slabs according to the criterion of the onset of the limit state of loss of integrity, which provides an opportunity to determine fire resistance more objectively

Optical control of multiple resistance levels in graphene for memristic applications

Neuromorphic computing has emphasized the need for memristors with non-volatile, multiple conductance levels. This paper demonstrates the potential of hexagonal boron nitride (hBN)/graphene heterostructures to act as memristors with multiple resistance states that can be optically tuned using visible light. The number of resistance levels in graphene can be controlled by modulating doping levels, achieved by varying the electric field strength or adjusting the duration of optical illumination. Our measurements show that this photodoping of graphene results from the optical excitation of charge carriers from the nitrogen-vacancy levels of hBN to its conduction band, with these carriers then being transferred to graphene by the gate-induced electric field. We develop a qualitative model to describe our observations. Additionally, utilizing our device architecture, we propose a memristive crossbar array for vector-matrix multiplications.

The Fabrication of Polyimide-Based Tunable Charge Traps Ternary Memristors Doped with Ni-Co Coated Carbon Composite Nanofibers.

In the dynamic fields of information science and electronic technology, there is a notable trend towards leveraging carbon materials, favored for their ease of synthesis, biocompatibility, and abundance. This trend is particularly evident in the development of memristors, benefiting from the unique electronic properties of carbon to enhance device performance. This study utilizes sensitized chemical evaporation and spin-coating carbonization techniques to fabricate nickel-cobalt coated carbon composite nanofibers (SC-NCMNTs). Novel polyimide (PI) matrix composite memory devices were fabricated using in situ polymerization technology. Transmission electron microscopy (TEM) and micro-Raman spectroscopy analyses validated the presence of dual interface structures located between the Ni-Co-MWNTs, carbon composite nanofibers, and PI matrix, revealing a significant number of defects within the SC-NCMNTs/PI composite films. Consequently, this results in a tunable charge trap-based ternary resistive switching behavior of the composite memory devices, exhibiting a high ON/OFF current ratio of 104 and a retention time of 2500 s at an operating voltage of less than 3 V. The mechanism of resistive switching is thoroughly elucidated through a comprehensive charge transport model, incorporating molecular orbital energy levels. This study provides valuable insights for the rational design and fabrication of efficient memristors characterized by multilevel resistive switching states.

Reset transition in HfO2-Based memristors using a constant power signal

Memristors, also known as resistive switching devices, have great potential for applications in memory and neuromorphic systems. Understanding the switching mechanisms is crucial since ReRAM memories need to operate at high frequencies. It is known the reset transition is dominated by the conductive filament Joule heating. We have studied the reset transition in TiN/Ti/HfO2/W metal–insulator–metal memristors by applying constant power signals to different initial filament thicknesses, which were obtained using different initial low resistance states. The results show that power value controls the reset times, decreasing when the power is increased. On the other hand, larger resistances lead to faster reset transitions. These measurements have allowed us to obtain a value of the thermal resistance of the conductive filament. Moreover, we have observed the reset times as a function of the initial resistance and the power lies on a common plane, which allows us to estimate the transition time by fixing an initial resistance and a power value.

Bioengineered Extracellular Vesicles Delivering siMDM2 Sensitize Oxaliplatin Therapy Efficacy in Colorectal Cancer.

Oxaliplatin (OXA) is the first-line drug for the treatment of colorectal cancer (CRC), and susceptibility to drug resistance affects patient prognosis. However, the exact underlying mechanisms remain unclear. Platinum-acquired resistance in CRC is a continuous transition process; though, current research has mainly focused on the end state of drug resistance, and the early events of drug resistance have been ignored. In this study, single-cell transcriptome sequencing is combined with a dynamic network biomarker (DNB), and found that the functional inhibition of the mitochondrial electron transport chain complex I occur early in the development of attained resistance to OXA in CRC cells, as evidenced by a decrease in the levels of subunit proteins, primarily NDUFB8. Specifically, the mouse double minute 2 homologue (MDM2) mediates the ubiquitination and degradation of NDUFB8, reducing intracellular reactive oxygen species (ROS) generation under chemotherapeutic stress, consequently contributing to drug resistance. Based on this, the study constructs engineered extracellular vesicles carrying siMDM2 by electroporation and validates the application of EV-siMDM2 to improve the efficacy of OXA-based chemotherapy by inhibiting the MDM2/NDUFB8/ROS signaling axis in patient-derived xenograft (PDX) and hepatic and pulmonary metastasis mouse models, thus providing new ideas and an experimental basis for the platinum-resistant treatment of CRC.

Genetic aspects of taste formation

The article discusses the molecular genetic basis of taste development which determines the peculiarity of perception of sweet, salty, sour, bitter and high-protein food (umami). The genes TAS1R3, FTO, GLUT2, FGF21, GNAT3 are responsible for individual perception of sugar volume. Serum FGF21 levels are significantly elevated in obese patients and in patients with type 2 diabetes mellitus which presumably indicates a state of resistance to FGF21. Given the role of refined sugars in the development of diseases, the use of foods with a reduced content or complete absence of added sugar is a worldwide trend, especially necessary in the nutrition of children. During genome-wide sequencing for 39 patients aged 15-18 years, FGF21 gene polymorphism was detected in 27 adolescents (69 %) without gender identity. Almost all patients with FGF21 gene polymorphism showed a high addiction to sweet foods. Currently, the existence of a sixth taste is being debated, it is ammonium chloride, whose receptors are regulated by the Otop1 gene which is also responsible for the identification of sour taste.

Field-Free Superconducting Diode Effect and Magnetochiral Anisotropy in FeTe0.7Se0.3 Junctions with the Inherent Asymmetric Barrier.

Nonreciprocal electrical transport, characterized by an asymmetric relationship between the current and voltage, plays a crucial role in modern electronic industries. Recent studies have extended this phenomenon to superconductors, introducing the concept of the superconducting diode effect (SDE). The SDE is characterized by unequal critical supercurrents along opposite directions. Due to the requirement on broken inversion symmetry, the SDE is commonly accompanied by electrical magnetochiral anisotropy (eMCA) in the resistive state. Achieving a magnetic-field-free SDE with field tunability is pivotal for advancements in superconductor devices. Conventionally, field-free SDE has been achieved in Josephson junctions by intentionally intercalating an asymmetric barrier layer. Alternatively, internal magnetism was employed. Both approaches pose challenges in the selection of superconductors and fabrication processes, thereby impeding the development of SDE. Here, we present a field-free SDE in FeTe0.7Se0.3 (FTS) junction with eMCA, a phenomenon absent in FTS single nanosheets. The field-free property is associated with the presence of a gradient oxide layer on the upper surface of each FTS nanosheet, while eMCA is linked to spin splitting arising from the absence of inversion symmetry. Both SDE and eMCA respond to magnetic fields with distinct temperature dependencies. This work presents a versatile and straightforward strategy for advancing superconducting electronics.

Chemical and Resistive Switching Properties of Elaeodendron buchananii Extract-Carboxymethyl Cellulose Composite: A Potential Active Layer for Biodegradable Memory Devices.

Biodegradable electronic devices play a crucial role in addressing the escalating issue of electronic waste accumulation, which poses significant environmental threats. In this study, we explore the utilization of a methanol-based extract of the Elaeodendron buchananii plant blended with a carboxymethyl cellulose biopolymer to produce a biodegradable and environmentally friendly functional material for a resistive switching memory system using silver and tungsten electrodes. Our analyses revealed that these two materials chemically interact to generate a perfect composite with near semiconducting optical bandgap (4.01 eV). The resultant device exhibits O-type memory behavior, with a low ON/OFF ratio, strong endurance (≥103 write/erase cycles), and satisfactory (≥103) data retention. Furthermore, through a comprehensive transport mechanism analysis, we observed the formation of traps in the composite that significantly improved conduction in the device. In addition, we established that altering the voltage amplitude modifies the concentration of traps, leading to voltage amplitude-driven multiple resistance states. Overall, our findings underscore the potential of functionalizing polymers that can be functionalized by incorporating plant extracts, resulting in biodegradable and nonvolatile memory devices with promising performance metrics.

Threshold Switching and Resistive Switching in SnO2-HfO2 Laminated Ultrathin Films

Polycrystalline SnO2-HfO2 nanolaminated thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) and TiN substrates at 300 °C. The samples, when evaluated electrically, exhibited bipolar resistive switching. The sample object with a stacked oxide layer structure of SnO2 | HfO2 | SnO2 | HfO2 additionally exhibited bidirectional threshold resistive switching properties. The sample with an oxide layer structure of HfO2 | SnO2 | HfO2 displayed bipolar resistive switching with a ratio of high and low resistance states of three orders of magnitude. Endurance tests revealed distinguishable differences between low and high resistance states after 2500 switching cycles.

A multilevel resistive switching memristor based on flexible organic–inorganic hybrid film with recognition function

Abstract Brain-inspired neuromorphic computing systems fueled the emergence of memristor-based artificial synapses, however, conventional silicon-based devices restricted their usage in the wearable field because of their difficulty in bending. To tackle the above challenge, a vertically structured flexible memristor with aluminum-based hydroquinone organic–inorganic hybrid film and Al2O3 as the functional layer, ITO and Pt as the bottom and top electrodes, and PET as the substrate has been developed utilizing molecular/atomic layer deposition to achieve a tradeoff between the resistive transition properties and the flexibility of memristors. The obtained devices combine stable resistive switching behavior and flexibility, showing high switching ratio of 103, better retention (up to 105 s) and endurance properties (up to 104 cycles), and robustness at radius of curvature of 4.5 mm after 104 bending cycles. Furthermore, the presence of multilevel resistive states in these devices ensures that the memristor can emulate synaptic properties such as paired-pulse facilitation, transition from short-term plasticity to long-term plasticity, long-term potentiation and depression, and spike-time-dependent plasticity. The resistive switching mechanism and the role of the bending state on the electrical performance of the device are explored. The fully connected artificial neural network based on the memristor can achieve a recognition accuracy of 90.2% for handwritten digits after training and learning. Flexible memristor will bring feasible advances to the integration of neuromorphic computing and wearable functionality.