Minimum Resistivity Research Articles

Investigation on the electrical property of gold nanowire prepared by nanoskiving

The electrical signal plays a pivotal role in the functionality of nanowire-based sensors. The investigation on the electrical property of nanowire has thus drawn increasing attention. In this study, gold nanowires are prepared by nanoskiving approach and the electrical properties of Au nanowires are evaluated. It is found that the resistivity of Au nanowire is significantly higher than that of bulk Au. The influence of nanoskiving parameters on the electrical properties are also investigated. The resistivity of the nanowire increases with the decreasing cutting depth and the film thickness. The minimum resistivity of the nanowire is 2.8 × 10−8 Ω m. The investigation into the failure behavior of the nanowire reveals that it exhibits significant Joule heating and electromigration, ultimately resulting in its structural degradation due to high current-induced melting fracture. The research presented in this study provides a valuable technical framework for the application of nanowire-based sensors that prepared by nanoskiving technique.

Impact of surface-roughness and fractality on electrical conductivity of SnS thin films

Mono- and multi-fractal geometry have been used to explore the surface characteristics of scanning electron microscopy (SEM) micrographs of the SnS films with thicknesses of 100 nm (SnS1) to 600 nm (SnS4), respectively. For this investigation, the SnS thin films have been grown on fluorine-doped tin oxide (FTO)-coated glass substrate through the thermal evaporation route, and surface morphologies are captured by SEM. Two-dimensional multi-fractal detrended fluctuation analysis (MFDFA) based on the partition function is used to examine whether the surfaces have a multi-fractal nature or not. The partition function is applied to extract the generalized Hurst exponent from the segment size. It has been found that surfaces with higher surface roughness induce substantial nonlinearity and a wider width of the multi-fractal spectrum. The multi-fractal spectrum acquired from the analysis of the geometry and shape of the singularity spectrum is used to quantify the irregularity and complexity of surfaces. Minkowski functionals (MFs) parameters such as volume, boundary, and connectivity were measured for each thin film. Moreover, we tried to correlate the electrical conductivity with the mono- and multi-fractal parameters such as fractal dimension (Df), singularity strength function (Δα), singularity spectrum Δf(α), and it is observed that the conductivity of a thin film decreases with decreasing fractal dimension. The minimum (maximum) resistivity (conductivity) was observed for the surface having a larger fractal dimension. The present investigation suggests that such SnS surfaces, having minimal resistivity and maximum conductivity on the roughest surface, indicate enhanced light trapping capacity and can be utilized as active layers for advanced optoelectronics devices.

Utilizing geophysical methods for assessing groundwater resources in the Dijil River Catchment, Northwestern Ethiopia

This study utilizes geophysical methods to assess groundwater resources in the Dijil River catchment near Debremarkos Town, Northwestern Ethiopia. Recent alluvial deposits and volcanic rocks of varying ages characterize the area. The aim is to map subsurface formations and evaluate groundwater potential. Two hundred twenty-eight magnetic data were collected, mainly oriented in NE-SW, NW-SE, E-W, and N-S directions, and twenty-four Vertical Electrical Sounding data utilizing the Schlumberger configuration. The results of the magnetic data reveal lineaments in different directions in the study area. Most of the Geoelectric sections show three layers, of which the second or the third layers are aquifers having minimum and maximum resistivity of 6 and 155 Ohm.m, respectively, and average resistivity range of 13–50 Ohm.m with a thickness ranging 24–200m. The layers represent alluvial deposits, highly weathered and fractured basalt (major aquifer zone), and moderately to slightly weathered and fractured basalt. Shallow and deeper low resistivity horizons, indicating groundwater saturation zones, are visible. The integrated geophysical survey aligns well with available borehole data.

Low-Temperature Selective Si:As Epitaxy

A selective low-temperature Si:As (LT-SiAs) process is presented which utilizes cyclic deposition-etch (CDE) at <450oC. Selectivity against SiN and SiOx dielectrics and crystallinity are confirmed on gate-all-around (GAA) patterned structures. Hall measurements on blanket wafers show a resistivity minimum of 0.42 mΩ-cm at ~1.7% As for selective LT-SiAs. Secondary-ion mass spectroscopy (SIMS) profiles of P and As diffusion into intrinsic Si (i-Si) for LT-SiP/LT-SiAs/i-Si and LT-SiP/i-Si stacks show >2× benefit of using LT-SiAs spacers to minimize dopant diffusion for as-deposited, soak-annealed and spike-annealed samples. Improvement is attributed to relatively limited diffusivity of As in Si versus P and the lower As concentration needed for LT-SiAs layer to achieve minimum resistivity relative to LT-SiP (~3%). Lastly, a comparison of LT-SiAs and high-temperature Si:As (HT-SiAs) shows a ~2× reduction of As diffusion into i-Si for LT-SiAs at length scales of >10nm.

Laser-Assisted Photo-Thermal Reaction for Ultrafast Synthesis of Single-Walled Carbon Nanotube/Copper Nanoparticles Hybrid Films as Flexible Electrodes.

The hybridization of single-walled carbon nanotubes (SWCNTs) and Cu nanoparticles offers a promising strategy for creating highly conductive and mechanically stable fillers for flexible printed electronics. In this study, we report the ultrafast synthesis of SWCNT/Cu hybrid nanostructures and the fabrication of flexible electrodes under ambient conditions through a laser-induced photo-thermal reaction. Thermal energy generated from the nonradiative relaxation of the π-plasmon resonance of SWCNTs was utilized to reduce the Cu-complex (known as a metal-organic decomposition ink) into Cu nanoparticles. We systematically investigated the effects of SWCNT concentration and output laser power on the structural and electrical properties of the SWCNT/Cu hybrid electrodes. The SWCNT/Cu electrodes achieved a minimum electrical resistivity of 46 μohm·cm, comparable to that of the metal-based printed electrodes. Mechanical bending tests demonstrated that the SWCNT/Cu electrodes were highly stable and durable, with no significant deformation observed even after 1000 bending cycles. Additionally, the electrodes showed rapid temperature increases and stable Joule heating performance, reaching temperatures of nearly 80 °C at an applied voltage of less than 3.5 V.

The Effect of Concentration of Aluminum on Structural, Optical, and Electrical Properties of Aluminum‐doped ZnO Nanostructures Electrochemically Deposited on Polyimide

AbstractAluminum‐doped ZnO (AZO) were successfully prepared on polyimide (PI) film using electrochemical deposition. Field emission scanning electron microscopy (FESEM) analysis revealed that as the aluminum concentration increased, the morphology of AZO nanostructures changed from pellets to nanorods. X‐ray photoelectron spectrometry (XPS) was employed to study the chemical states of undoped and Al‐doped ZnO on a polyimide substrate. The X‐ray diffraction (XRD) patterns of the PI/AZO nanostructures showed a polycrystalline wurtzite structure with a crystallographic orientation along the (002) plane. The XRD analysis also indicated that the average crystallite size decreased from 50.5 nm to 31.0 nm with increasing aluminum concentration (from 0.05 mM to 10 mM). Transmittance analysis revealed that with increasing aluminum concentration, the average optical transmittance in the visible region decreased from 90 % to 75 %. The aluminum concentration has a significant effect on the electrical properties of the samples, as shown by current‐voltage (I–V) and Hall measurements. Among the samples, the AZO/PI film prepared with 5 mM aluminum concentration exhibited the minimum electrical resistivity (4.14×10−2 Ω.cm), the highest carrier density (1.10×1021 cm−3) and the Hall mobility (5.40 cm2 V−1 s−1). We also discuss the possible mechanisms underlying these results compared to undoped ZnO films. This study contributes to the potential applications in flexible electronics and optoelectronics by demonstrating the tunability of AZO nanostructures on a flexible polyimide substrate through controlled aluminum doping.

Low contact resistivity at the 10−4 Ω cm2 level fabricated directly on n-type AlN

Ultrawide bandgap aluminum nitride (AlN) stands out as a highly attractive material for high-power electronics. However, AlN power devices face performance challenges due to high contact resistivity exceeding 10−1 Ω cm2. In this Letter, we demonstrate achieving a low contact resistivity at the 10−4 Ω cm2 level via refined metallization processes applied directly to n-AlN. The minimum contact resistivity reached 5.82 × 10−4 Ω cm2. Our analysis reveals that the low contact resistance primarily results from the stable TiAlTi/AlN interface, resilient even under rigorous annealing conditions, which beneficially forms a thin Al–Ti–N interlayer, promotes substantial nitrogen vacancies, enhances the net carrier density at the interface, and lowers the contact barrier. This work marks a significant milestone in realizing superior Ohmic contacts for n-type AlN, paving the way for more efficient power electronic and optoelectronic devices.

Influence of power ramps on the physical properties of AZO thin films deposited at room temperature by RF magnetron sputtering technique

Abstract Aluminum-doped zinc oxide (AZO) thin films were deposited on glass substrates at room temperature by RF sputtering technique. Power ramps between 125 and 105 W were applied with a step of 4 W by intervals of 15, 7.5 and 1.8 min, for 180 min at 1.60 Pa. In this study, we investigated the structural, morphological, electrical, and optical properties of AZO films. X-ray Diffraction analysis showed that the films have a wurtzite-type hexagonal crystalline structure with a preferential crystallographic orientation (002) normal to the c axis. The average transmittance is greater than 76% for the wavelength range in the visible spectrum. The bandgap values were found between 3.32 and 4.01 eV, and refractive index was 1.79–2.60. Atomic force microscope measurements show homogeneous films with a roughness between 17–22 nm. A minimum resistivity value of 2.0 × 10−3 Ω cm was obtained for the film by using a power ramp of 4 W/1.8 min.

4D printing bio-inspired chiral metamaterials for flexible sensors

Chiral metamaterials were a typical metamaterial configuration, which had broad application prospects in vibration isolation, energy absorption and other fields. Although 4D-printed chiral metamaterials have been investigated by introducing stimulus-responsive materials to achieve programmable properties of metamaterials, chiral metamaterials are mostly fabricated by single materials, which limits the adjustable domains of the mechanical properties and the design freedom of metamaterials. In this work, inspired by the configuration of collagen fibers of biological tissues, the bio-inspired chiral metamaterials with wave ligaments were developed. The bi-phase (TPE@PLA-SMP) composite chiral metamaterials were fabricated by combining active phase (shape memory polylactic acid, PLA-SMP) with passive phase (thermoplastic elastomer, TPE). The influences of geometric parameters, ligament gradient forms, and TPE distribution modes on the mechanical properties of the developed metamaterials were characterized. When the TPE was distributed at 0° and 45°, the deformation of the mechanical metamaterials occurred mainly in the TPE cells, resulting in the J-shaped displacement-force curve. The programmable and reconfigurable properties of the metamaterials (including configuration, and energy absorption performance) under thermal stimulation were demonstrated. The specific energy absorption (SEA) of the metamaterial 2θ = π/2 was realized to transform between 0.92 kJ/kg and 0.38 kJ/kg by shape memory programming. Flexible sensors based on TPE@PLA-SMP composite metamaterials were developed by filling CNC-CNT@PVA composite hydrogels (minimum resistivity 8.1 Ω m), which enabled stable output of electrical signals under repeated loads. A motion state monitor was developed and realized to monitor the wearer's movement such as running, demonstrating its potential application prospects in fields such as flexible electronics.

Enhancing power conversion efficiency of polycrystalline silicon photovoltaic cells using yttrium oxide anti-reflective coating via electro-spraying method

The achievement of optimal performance is a crucial aspect of renewable energy resources. The study attempts to boost the power conversion efficiency of polycrystalline silicon (Si) photovoltaic cells by the application of anti-reflective coating (ARC). The solgel method is employed to synthesize yttrium oxide (Y2O3). The electro spraying method was utilized to apply the ARC on photovoltaic cells. The effect of coating on PV cells were determined through the structural, electrical, optical and thermal analysis. The antireflective material was uniformly applied over the coated substrate for 45 min (Y-I), 90 min (Y-II), 135 min (Y-III), and 180 min (Y-IV). The sample coated for 135 min showed an optimal power conversion efficiency (PCE) of 21.65 % and 20.09 % in the presence of neodymium light and direct sunlight, respectively, and a minimum electrical resistivity of 3.96 × 10−3 Ω-cm. In addition, Y-III coated cells exhibit a maximum absorbance of 94 %. The Y-III coated photovoltaic cells demonstrated the lowest temperature of 34.6 °C when exposed to an open environment and 40.6 °C when exposed to a controlled environment. The results from numerous studies demonstrated that Y2O3 can be a suitable ARC, which effectively improved the efficiency of photovoltaic cells.

Effect of A-site disorder and reduced grain size on low temperature resistivity minima and magnetoresistance behaviour in Nd0.7-xGdxSr0.3MnO3 (0 ≤ x ≤ 0.3)

ABSTRACT The present work provides a detailed investigation of the electronic- and magneto-transport properties of bulk and nanostructured Nd0.7-xGdxSr0.3MnO3 (x = 0, 0.1, 0.2 and 0.3) polycrystalline manganites. We have specially addressed the issue of the observed minimum in the temperature dependent resistivity of these manganites in the low temperature regime (<50 K). It is observed that increase of A-site disorder due to progressive substitution of Gd and decrease of grain size enhances the observed resistivity minima. Different theoretical models have been employed to analyze the resistivity data in the low temperature regime. It has been established that the quantum interference effect due to electron–electron interaction, most likely, is the dominant factor of the observed resistivity minimum and upturn in resistivity in the lower temperature regime. The effect of phase separation is also found to play a key role in the electronic-transport of the materials. Further the magnetoresistance is found to increase with the increase of Gd concentration as well as with the decrease of grain size in the low temperature regime. The origin of magnetoresistance has been critically analyzed.

FABRICATION AND CHARACTERIZATION OF ZnO:3,4-DIHYDRO-2H-NAPHTHO[2,3-b] [1,4] OXAZINE-5,10-DIONE THIN FILMS FOR SOLAR CELL APPLICATION

The fabricated films were characterized by SEM, EDX and Powder x-ray diffraction (XRD) analysis also their electrical activities were tested for the solarcell application. The films (1-5) are tested for their solar cell application. Film 4 shows minimum resistivity (ρ) value of 0.42X10-2Ωcm at 40% than that of the other films.

Thermal, Mechanical and Electrical Properties of Ag Nanoparticle–Polymethyl Methacrylate Composites Under Different Service Temperatures

Ag-nanoparticle-reinforced polymethyl methacrylate (AgNP/PMMA) composites are widely used in healthcare, electronics, construction, transportation and many other fields. As the service temperature fluctuates easily, it is necessary to study the temperature effect on the properties of AgNP/PMMA composites. In this work, a preparation method of mixing and hot-pressing was used to fabricate multifunctional AgNP/PMMA composites that are suitable for large-scale industrial production. AgNPs are found to disperse homogeneously in the PMMA matrix. The thermal conductivity of the composite with 15 vol% AgNPs is 116.19% higher than that of PMMA and decreases as the temperature rises. Flexural strength increases first and then decreases with the rising of AgNP content and service temperature, while the flexural modulus decreases gradually. The minimum electrical resistivity of the composite achieves 1.37 × 10−3 Ω·m, with a low percolation threshold of 5 vol%, an improvement of nine orders of magnitude over PMMA. The results demonstrate that the service temperature has a significant effect on the comprehensive properties of AgNP/PMMA composites.

Estimation of Standard Penetration Test (SPT) Depth Testing Plan on Geoelectrical Resistivity Data Correlation (Ωm)

Abstract— Analysis of soil bearing capacity in receiving loads is an important step in the construction of building structures, namely as a basis for planning types, materials, material quality, and foundation dimensions. This study aims to analyze the minimum resistivity (Ωm) of soil or rock material that is correlated with the Standard Penetration Test (N-SPT) value of ≥ 50. This is done as the basis for estimating the depth of drilling in the Standard Penetration Test (SPT) test. This study applies a geolytic approach to study soil and rock specifications. The research data includes descriptions of soil types, depth and thickness of each soil layer, material resistivity which is interpreted as soil density, minerals, to the presence of water content in the soil layers. The results of the data correlation analysis show that the higher the resistivity value of the soil or rock material (Ωm), the greater the number of collisions (N). The minimum resistivity value of soil material is more than (&gt;) 121.27 Ωm obtained from the number of (N) collisions of the Standard Penetration Test (N-SPT) of more than (≥) 50. Thus, further estimation of the drilling depth can be carried out. The depth of drilling for each location varies, depending on the carrying capacity of the soil, which ultimately determines the amount of drilling costs.

Improved magnetic, electrical, and dielectric characteristics of graphene nano-platelets (GNPs)-Integrated Ni0·4Cd0·6Fe1.97Sm0.03O4 ferrite composites synthesized via sol-gel auto-combustion method

This research work analyzes the impact of graphene nanoplatelets (GNPs) on the structural, electrical, dielectric, optical, and magnetic properties of the Ni0·4Cd0·6Fe1.97Sm0.03O4/x-GNPs (SNCF/GNPs) composites (x = 0 %, 2.5 %, and 5 %) prepared via the sol-gel auto-combustion route. The results revealed that SNCF particles were distributed on GNPs which improved the multifaceted properties of SNCF spinel ferrites. XRD analysis confirmed the FCC spinel structure with a minimum crystallite size (D) of 18.99 nm for sample with 5 wt %GNPs. The DC electrical resistivity decreased from 9.06 × 1011 Ω-cm at 313K to 1.41 × 108 Ω-cm at 673K, revealing the semi-conducting nature of composites. The improved electroconductivity and reduced bandgap energy are observed for samples with minimum resistivity 1.02 × 105 Ω-cm at 673K and 1.70 eV energy, respectively, containing 5 wt %GNPs. Samples show higher permittivity values at low frequency and decreased at high frequency. The maximum ac conductivity is observed for composite with 5 wt %GNPs which is attributed to the hopping mechanism. Finally, the magnetization (Ms) increased from 52.24 to 79.71 emu/g with increasing GNPs contents. Hence, the synthesized composites with 5 wt %GNPs are more favorable than the pure sample for application in waste-water treatment, high-frequency devices, and energy storage devices.

P‐108: High conductivity transparent electrode with In2O3 – ZnO periodic structure and gradient oxygen concentration

Multilayer structures based on the In‐Zn‐O (IZO) system with modulated oxygen doping have been developed as a TCF (transparent conductive film) alternative to ITO or IGZO layers in the LC and OLED displays. The minimum resistivity (3.37 Ohm*cm) and the maximum concentration of free charge carriers correspond to the layers synthesized in an atmosphere of pure argon, while the maximum mobility (39.18 cm2/V*s) corresponds to the layers synthesized in the atmosphere of both argon and oxygen 99.6%/0.4% mixture. Thin‐film periodic structures with gradient modulation of oxygen content in thickness have been fabricated by periodically changing the oxygen concentration in the composition of the working gas during spraying at a substrate temperature of 100 °C. The structures consist of alternating layers with a high concentration of free charge carriers and layers with high mobility. As a result of the single layers' thicknesses optimization the thin‐film periodic structures with a minimum resistivity of 2.89 Ohm*cm have been made. The resistivity is lower than in homogeneous layers of the same composition. The alternation of layers of optimal thickness provides high carrier mobility, it is inherent to layers synthesized in the atmosphere of 99.6/0.4 argon and oxygen mixture at high concentration. The mobility value is close to the value achieved in the layers synthesized in the pure argon atmosphere.This material provides fabrication of high quality, stable and low cost transparent electrodes or TFT layers with performances corresponding to parameters of traditional materials.

Transparent Conductive Titanium and Fluorine Co-doped Zinc Oxide Films.

Aerosol-assisted chemical vapor deposition (AACVD) was used to deposit highly transparent and conductive titanium or fluorine-doped and titanium-fluorine co-doped ZnO thin films on glass substrate at 450 °C. All films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), UV-Vis spectroscopy, scanning electron spectroscopy (SEM), and four-point probe. The films were 600-680 nm thick, crystalline, and highly transparent (80-87 %). The co-doped film consisted of 0.70 at % titanium and 1 at % fluorine, and displayed a charger carrier mobility, charge carrier concentration, and a minimum resistivity of 8.4 cm2 V-1 s-1, 3.97×1020 cm-3, and 1.69×10-3 Ω cm, respectively. A band gap of 3.6 eV was observed for the co-doped film. Compared to the undoped and singly doped films, the co-doped film displayed a notably higher structure morphology (more homogenous grains with well-defined boundaries) suitable for transparent conducting oxide applications.

Fabrication and Characterization of Nanostructured Tin doped Indium Oxide Coatings by the Instrument of Spray Pyrolysis

Nanostructured indium tin oxide (ITO) coating is one of the transparent conductive oxides (TCO) materials utilized as a transparent electrode. Due to its high demand in various applications like liquid crystal displays, touch screens, light emitting devices, and solar cells, ITO coatings have garnered significant research attention, owing to their excellent properties of high visible light transmittance and low resistance. Nanostructured coating of tin -doped Indium Oxide (ITO) was fabricated on glass slides utilizing the instrument of chemical spray pyrolysis (CSP), with varying levels of Sn-doping at 0, 3, 6, and 9 wt%. The effect of tin content on the many physical characteristics of the resulting coatings has been examined. The analysis of x-ray diffraction (XRD) displayed the characteristic orientations. The coatings have a polycrystalline cubic lattice structure along (400) as the preferred growth direction. Morphological measurements indicate that the samples possess a highly uniform surface and the grain size for the ITO samples is 100 nm displaying a nanostructure for all samples. The optical transmittance was measured over 75% for coating with tin content equal to 0wt%, while the transmittance of the Sn-doped films can range from 78% to 84% at 700 nm and the values of the direct bandgap were measured as 3.6, 3.65, 3.675, and 3.7eV for Sn doping 0, 3, 6, and 9 wt% respectively. In the visible area, the nanostructured ITO coatings exhibit elevated values of transmittance which makes them suitable for various optoelectronic applications such as window materials in solar cells. The results indicate a desirable reduction in the electrical resistivity with rising the number of carriers per unit volume and mobility with increasing tin content in the samples. The minimum electrical resistivity and maximum carrier concentration were achieved for ITO coating with tin content equal to 9wt%. The incorporation of Sn dopant significantly changes the overall electrical properties of indium oxide films, this is favorable for transparent conducting oxide.

The Origin of the Low-Temperature Minimum of Electrical Resistivity in Strontium Ferromolybdate Ceramics

In this work, we analyze the electrical behavior of strontium ferromolybdate below room temperature. We demonstrate that in SFMO ceramics, SFMO thin films deposited by pulsed laser deposition including (100) and (111) textured thin films, as well as in nonstoichiometric SFMO ceramics, an intergrain tunneling mechanism of charge carrier conduction leads to a decrease in resistivity with increasing temperature in the low-temperature region. This intergrain tunneling can be attributed to fluctuation-induced tunneling. On the other hand, bulk metallic resistivity of the grains, which increases with temperature, becomes dominant at higher temperatures and magnetic fluxes. The interplay of these conduction mechanisms leads to a resistivity minimum, i.e., a resistivity upturn below the temperature of minimum resistivity. Several mechanisms have been discussed in the literature to describe the low-temperature upturn in resistivity. Based on available literature data, we propose a revised model describing the appearance of a low-temperature resistivity minimum in SFMO ceramics by an interplay of fluctuation-induced tunneling and metallic conductivity. Additionally, we obtained that in the region of metallic conductivity at higher temperatures and magnetic fluxes, the pre-factor Rm of the temperature-dependent term of metallic conductivity written as a power law decreases exponentially with the temperature exponent m of this power law. Here, the value of m is determined by the charge scattering mechanism.

Optoelectronic properties of BiCuOSe p-type oxychalcogenides

BiCuOSe systems are proposed as candidates to develop transparent p-type semiconductors in the visible region. This work reports the characterization results obtained for the BiCuOSe powders, synthesized by the solid-state reaction (SSR) method through mechanical milling, and nanostructured thin films deposited from the same processed powders using the pulsed laser deposition (PLD) technique. Structural characterization through X-ray diffraction (XRD) showed that the material presents a tetragonal structure with an average crystallite size of 21 nm and a preferential orientation in the (1 0 2) plane. The morphological and particle size evolution of BiCuOSe powders is presented as a function of the milling time. Transmission and scanning electron microscopies confirmed the spherical geometry of the particles in the powders and nanosheets like structure for the films. Particle sizes were also estimated, ranging from 10 to 100 nm for powders and 60 to 70 nm for films. The bandgap values, EG, for BiCuOSe powders were estimated from diffuse reflectance spectra using the Kubelka–Munk method, yielding values close to 0.7 eV. For thin films, EG values were estimated using the Tauc method, obtaining values in the range of 0.8–3.5 eV, depending on the annealing treatment. Additionally, electrical properties were measured in all deposited thin films, confirming the p-type conductivity, a minimal resistivity of 0.0735 Ω cm, hole mobility on the order of 88 cm2/Vs, and carrier concentration of 9.7 × 1018 cm−3.